Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 5

SiC Related Abstracts

5 The Experience with SiC MOSFET and Buck Converter Snubber Design

Authors: Petr Vaculik

Abstract:

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber.

Keywords: SiC, MOSFET, IGBT, SBD, RC snubber

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4 Research on Modern Semiconductor Converters and the Usage of SiC Devices in the Technology Centre of Ostrava

Authors: P. Vaculik, P. Kaňovský

Abstract:

The following article presents Technology Centre of Ostrava (TCO) in the Czech Republic. Describes the structure and main research areas realized by the project ENET-Energy Units for Utilization of non-traditional Energy Sources. More details are presented from the research program dealing with transformation, accumulation, and distribution of electric energy. Technology Centre has its own energy mix consisting of alternative sources of fuel sources that use of process gases from the storage part and also the energy from distribution network. The article will focus on the properties and application possibilities SiC semiconductor devices for power semiconductor converter for photo-voltaic systems.

Keywords: Simulation, Photovoltaic systems, SiC, DC/DC converter, technology centre of Ostrava

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3 Effect of Oxidation on Wetting Behavior between Silicon and Silicon Carbide

Authors: Zineb Benouahmane, Zhang Lifeng

Abstract:

Experimental oxidation tests at high temperature (1300°C-1500°C) on α-SiC samples have been performed with different holding times and atmosphere (air, argon). Oxidized samples were then analyzed using X-ray photoelectron spectroscopy coupled to SEM and DAKTEK surface profiler verification. The oxidation rate and the mas gain were found to increase with temperature and holding times, corresponding to a passive oxidation regime which lead to the formation of SiO2 layer. The sessile drop method is employed in order to measure the wetting angles between Si/SiC system at high temperature (1430°C-1550°C). Contact angle can be varied between 44 °C to 85°C, by controlling the oxygen content in α-SiC. Increasing the temperature occurred the infiltration of liquid silicon and deoxidation of the coating.

Keywords: Oxidation, Silicon, Wettability, SiC

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2 Moderation in Temperature Dependence on Counter Frictional Coefficient and Prevention of Wear of C/C Composites by Synthesizing SiC around Surface and Internal Vacancies

Authors: Kazuya Okubo, Toru Fujii, Noboru Wakamoto, Kiyotaka Obunai

Abstract:

The aim of this study is to moderate the dependence of counter frictional coefficient on temperature between counter surfaces and to reduce the wear of C/C composites at low temperature. To modify the C/C composites, Silica (SiO2) powders were added into phenolic resin for carbon precursor. The preform plate of the precursor of C/C composites was prepared by conventional filament winding method. The C/C composites plates were obtained by carbonizing preform plate at 2200 °C under an argon atmosphere. At that time, the silicon carbides (SiC) were synthesized around the surfaces and the internal vacancies of the C/C composites. The frictional coefficient on the counter surfaces and specific wear volumes of the C/C composites were measured by our developed frictional test machine like pin-on disk type. The XRD indicated that SiC was synthesized in the body of C/C composite fabricated by current method. The results of friction test showed that coefficient of friction of unmodified C/C composites have temperature dependence when the test condition was changed. In contrast, frictional coefficient of the C/C composite modified with SiO2 powders was almost constant at about 0.27 when the temperature condition was changed from Room Temperature (RT) to 300 °C. The specific wear rate decreased from 25×10-6 mm2/N to 0.1×10-6 mm2/N. The observations of the surfaces after friction tests showed that the frictional surface of the modified C/C composites was covered with a film produced by the friction. This study found that synthesizing SiC around surface and internal vacancies of C/C composites was effective to moderate the dependence on the frictional coefficient and reduce to the abrasion of C/C composites.

Keywords: Wear, SiC, friction coefficient, C/C composites

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1 Research of the Activation Energy of Conductivity in P-I-N SiC Structures Fabricated by Doping with Aluminum Using the Low-Temperature Diffusion Method

Authors: Ilkham Gafurovich Atabaev, Khimmatali Nomozovich Juraev

Abstract:

The activation energy of conductivity in p-i-n SiC structures fabricated by doping with Aluminum using the new low-temperature diffusion method is investigated. In this method, diffusion is stimulated by the flux of carbon and silicon vacancies created by surface oxidation. The activation energy of conductivity in the p - layer is 0.25 eV and it is close to the ionization energy of Aluminum in 4H-SiC from 0.21 to 0.27 eV for the hexagonal and cubic positions of aluminum in the silicon sublattice for weakly doped crystals. The conductivity of the i-layer (measured in the reverse biased diode) shows 2 activation energies: 0.02 eV and 0.62 eV. Apparently, the 0.62 eV level is a deep trap level and it is a complex of Aluminum with a vacancy. According to the published data, an analogous level system (with activation energies of 0.05, 0.07, 0.09 and 0.67 eV) was observed in the ion Aluminum doped 4H-SiC samples.

Keywords: Aluminum, Activation Energy, SiC, low temperature diffusion

Procedia PDF Downloads 132