Search results for: sputtering
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 114

Search results for: sputtering

54 A TiO₂-Based Memristor Reliable for Neuromorphic Computing

Authors: X. S. Wu, H. Jia, P. H. Qian, Z. Zhang, H. L. Cai, F. M. Zhang

Abstract:

A bipolar resistance switching behaviour is detected for a Ti/TiO2-x/Au memristor device, which is fabricated by a masked designed magnetic sputtering. The current dependence of voltage indicates the curve changes slowly and continuously. When voltage pulses are applied to the device, the set and reset processes maintains linearity, which is used to simulate the synapses. We argue that the conduction mechanism of the device is from the oxygen vacancy channel model, and the resistance of the device change slowly due to the reaction between the titanium electrode and the intermediate layer and the existence of a large number of oxygen vacancies in the intermediate layer. Then, Hopfield neural network is constructed to simulate the behaviour of neural network in image processing, and the accuracy rate is more than 98%. This shows that titanium dioxide memristor has a broad application prospect in high performance neural network simulation.

Keywords: memristor fabrication, neuromorphic computing, bionic synaptic application, TiO₂-based

Procedia PDF Downloads 44
53 A Facile and Room Temperature Growth of Pd-Pt Decorated Hexagonal-ZnO Framework and Their Selective H₂ Gas Sensing Properties

Authors: Gaurav Malik, Satyendra Mourya, Jyoti Jaiswal, Ramesh Chandra

Abstract:

The attractive and multifunctional properties of ZnO make it a promising material for the fabrication of highly sensitive and selective efficient gas sensors at room temperature. This presented article focuses on the development of highly selective and sensitive H₂ gas sensor based on the Pd-Pt decorated ZnO framework and its sensing mechanisms. The gas sensing performance of sputter made Pd-Pt/ZnO electrode on anodized porous silicon (PSi) substrate toward H₂ gas is studied under low detection limit (2–500 ppm) of H₂ in the air. The chemiresistive sensor demonstrated sublimate selectivity, good sensing response, and fast response/recovery time with excellent stability towards H₂ at low temperature operation under ambient environment. The elaborate selective measurement of Pd-Pt/ZnO/PSi structure was performed towards different oxidizing and reducing gases. This structure exhibited advance and reversible response to H₂ gas, which revealed that the acquired architecture with ZnO framework is a promising candidate for H₂ gas sensor.

Keywords: sputtering, porous silicon, ZnO framework, XPS spectra, gas sensor

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52 High Efficiency Achievement by a New Heterojunction N-Zno:Al/P-Si Solar Cell

Authors: A. Bouloufa, F. Khaled, K. Djessas

Abstract:

This paper presents a new structure of solar cell based on p-type microcrystalline silicon as an absorber and n-type aluminum doped zinc oxide (ZnO:Al) transparent conductive oxide as an optical window. The ZnO:Al layer deposited by rf-magnetron sputtering at room temperature yields a low resistivity about 7,64.10-2Ω.cm and more than 85% mean optical transmittance in the VIS–NIR range, with an optical band gap of 3.3 eV. These excellent optical properties of this layer in combination with an optimal contact at the front surface result in a superior light trapping yielding to efficiencies about 20%. In order to improve efficiency, we have used a p+-µc-Si thin layer highly doped as a back surface field which minimizes significantly the impact of rear surface recombination velocity on voltage and current leading to a high efficiency of 24%. Optoelectronic parameters were determined using the current density-voltage (J-V) curve by means of a numerical simulation with Analysis of Microelectronic and Photonic Structures (AMPS-1D) device simulator.

Keywords: optical window, thin film, solar cell, efficiency

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51 Microstructure and Mechanical Evaluation of PMMA/Al₂O₃ Nanocomposite Fabricated via Friction Stir Processing

Authors: Reham K. El Sawah, N. S. M. El-Tayeb

Abstract:

This study aims to produce a polymer matrix composite reinforced with Al₂O₃ nanoparticles in order to enhance the mechanical properties of PMMA. The composite was fabricated via Friction stir processing to ensure homogenous dispersion of Al₂O₃ nanoparticles in the polymer, and the processing was submerged to prevent the sputtering of nanoparticles. The surface quality, microstructure, impact energy and hardness of the prepared samples were investigated. Good surface quality and dispersion of nanoparticles were attained through employing sufficient processing conditions. The experimental results indicated that as the percentage of nanoparticles increased, the impact energy and hardness increased, reaching 2 kJ/m2 and 14.7 HV at a nanoparticle concentration of 25%, which means that the toughness and the hardness of the polymer-ceramic produced composite is higher than unprocessed PMMA by 66% and 33% respectively.

Keywords: friction stir processing, polymer matrix nanocomposite, mechanical properties, microstructure

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50 A Fast Chemiresistive H₂ Gas Sensor Based on Sputter Grown Nanocrystalline P-TiO₂ Thin Film Decorated with Catalytic Pd-Pt Layer on P-Si Substrate

Authors: Jyoti Jaiswal, Satyendra Mourya, Gaurav Malik, Ramesh Chandra

Abstract:

In the present work, we have fabricated and studied a resistive H₂ gas sensor based on Pd-Pt decorated room temperature sputter grown nanocrystalline porous titanium dioxide (p-TiO₂) thin film on porous silicon (p-Si) substrate for fast H₂ detection. The gas sensing performance of Pd-Pt/p-TiO₂/p-Si sensing electrode towards H₂ gas under low (10-500 ppm) detection limit and operating temperature regime (25-200 °C) was discussed. The sensor is highly sensitive even at room temperature, with response (Ra/Rg) reaching ~102 for 500 ppm H₂ in dry air and its capability of sensing H₂ concentrations as low as ~10 ppm was demonstrated. At elevated temperature of 200 ℃, the response reached more than ~103 for 500 ppm H₂. Overall the fabricated resistive gas sensor exhibited high selectivity, good sensing response, and fast response/recovery time with good stability towards H₂.

Keywords: sputtering, porous silicon (p-Si), TiO₂ thin film, hydrogen gas sensor

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49 Optical and Electrochromic Properties of All-Solid-State Electrochromic Device Consisting of Amorphous WO₃ and Ni(OH)₂

Authors: Ta-Huang Sun, Ming-Hao Hsieh, Min-Chuan Wang, Der-Jun Jan

Abstract:

Electrochromism refers to the persistent and reversible change of optical properties by an applied voltage pulse. There are many transition metal oxides exhibiting electrochromism, e.g. oxides of W, Ni, Ir, V, Ti, Co and Mo. Organic materials especially some conducting polymers such as poly(aniline), poly(3, 4-propylene- dioxythiophene) also received much attention for electrochromic (EC) applications. Electrochromic materials attract considerable interest because of their potential applications, such as information displays, smart windows, variable reflectance mirrors, and variable-emittance thermal radiators. In this study, the EC characteristics are investigated on an all-solid-state EC device composed of a-WO₃ and Ni(OH)₂ with a Ta₂O₅ protective layer which is prepared by magnetron sputtering. It is found that the transmittance modulation increases with decreasing the film thickness of Ta₂O₅. On the other hand, the transmittance modulation is 57% as the Ni(OH)₂/ITO is prepared by the linear-sweep potential cycling of the sputter-deposited Ta₂O₅/NiO/ITO in a 0.5 M LiClO₄+H₂O electrolyte. However, when Ni(OH)₂/ITO is prepared by a 0.01 M HCl electrolyte, the transmittance modulation of EC device can be improved to 61%.

Keywords: electrochromic device, tungsten oxide, nickel, Ta₂O₅

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48 The Effect of the Deposition Parameters on the Microstructural and Optical Properties of Mn-Doped GeTe Chalcogenide Materials

Authors: Adam Abdalla Elbashir Adam, Xiaomin Cheng, Xiang Shui Miao

Abstract:

In this work, the effect of the magnetron sputtering system parameters on the optical properties of the Mn doped GeTe were investigated. The optical properties of the Ge1-xMnxTe thin films with different thicknesses are determined by analyzing the transmittance and reflectance data. The energy band gaps of the amorphous Mn-doped GeTe thin films with different thicknesses were calculated. The obtained results demonstrated that the energy band gap values of the amorphous films are quite different and they are dependent on the films thicknesses. The extinction coefficients of amorphous Mn-doped GeTe thin films as function of wavelength for different thicknesses were measured. The results showed that the extinction coefficients of all films are varying inversely with their optical transmission. Moreover, the results emphasis that, not only the microstructure, electrical and magnetic properties of Mn doped GeTe thin films vary with the films thicknesses but also the optical properties differ with the film thickness.

Keywords: phase change magnetic materials, transmittance, absorbance, extinction coefficients

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47 Effect of Multilayered MnBi Films on Magnetic and Microstructural Properties

Authors: Hyun-Sook Lee, Hongjae Moon, Hwaebong Jung, Sumin Kim, Wooyoung Lee

Abstract:

Low-temperature phase (LTP) of MnBi has attracted much attention because it has a larger coercivity than that of Nd-Fe-B at high temperature, which gives high potential as a permanent magnet material that can be used at such high temperature. We present variation in magnetic properties of MnBi films by controlling the numbers of Bi/Mn bilayer. The thin films of LTP-MnBi were fabricated onto glass substrates by UHV sputtering, followed by in-situ annealing process at an optimized condition of 350 °C and 1.5 hours. The composition ratio of Bi/Mn was adjusted by varying the thickness of Bi and Mn layers. The highest value of (BH)max ~ 8.6 MGOe at room temperature was obtained in one Bi/Mn bilayer with 34 nm Bi and 16 nm Mn. To investigate the effect of Bi/Mn multilayers on the magnetic properties, we increased the numbers of Bi/Mn bilayer up to five at which the total film thicknesses of Bi and Mn were fixed with 34 nm and 16 nm. The increase of coercivity was observed up to three layers from 4.8 kOe to 15.3 kOe and then suppression was appeared. A reversed behavior was exhibited in the magnetization. We found that these were closely related to a microstructural change of LTP-MnBi and a reduction of growth rate of LTP-MnBi by analyzing XRD and TEM results. We will discuss how the multilayered MnBi affects the magnetic properties in details.

Keywords: coercivity, MnBi, multilayer film, permanent magnet

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46 An Extended X-Ray Absorption Fine Structure Study of CoTi Thin Films

Authors: Jose Alberto Duarte Moller, Cynthia Deisy Gomez Esparza

Abstract:

The cobalt-titanium system was grown as thin films in an INTERCOVAMEX V3 sputtering system, equipped with four magnetrons assisted by DC pulsed and direct DC. A polished highly oriented (400) silicon wafer was used as substrate and the growing temperature was 500 oC. Xray Absorption Spectroscopy experiments were carried out in the SSRL in the 4-3 beam line. The Extenden X-Ray Absorption Fine Structure spectra have been numerically processed by WINXAS software from the background subtraction until the normalization and FFT adjustment. Analyzing the absorption spectra of cobalt in the CoTi2 phase we can appreciate that they agree in energy with the reference spectra that corresponds to the CoO, which indicates that the valence where upon working is Co2+. The RDF experimental results were then compared with those RDF´s generated theoretically by using FEFF software, from a model compound of CoTi2 phase obtained by XRD. The fitting procedure is a highly iterative process. Fits are also checked in R-space using both the real and imaginary parts of Fourier transform. Finally, the presence of overlapping coordination shells and the correctness of the assumption about the nature of the coordinating atom were checked.

Keywords: XAS, EXAFS, FEFF, CoTi

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45 Reactive Sputter Deposition of Titanium Nitride on Silicon Using a Magnetized Sheet Plasma Source

Authors: Janella Salamania, Marcedon Fernandez, Matthew Villanueva Henry Ramos

Abstract:

Titanium nitrite (TiN) a popular functional and decorative coating because of its golden yellow color, high hardness and superior wear resistance. It is also being studied as a diffusion barrier in integrated circuits due to its known chemical stability and low resistivity. While there have been numerous deposition methods done for TiN, most required the heating of substrates at high temperatures. In this work, TiN films are deposited on silicon (111) and (100) substrates without substrate heating using a patented magnetized sheet plasma source. Films were successfully deposited without substrate heating at various target bias, while maintaining a constant 25% N2 to Ar ratio, and deposition of time of 30 minutes. The resulting films exhibited a golden yellow color which is characteristic of TiN. X-ray diffraction patterns show the formation of TiN predominantly oriented in the (111) direction regardless of substrate used. EDX data also confirms the 1:1 stoichiometry of titanium an nitrogen. Ellipsometry measurements estimate the thickness to range from 28 nm to 33 nm. SEM images were also taken to observe the morphology of the film.

Keywords: coatings, nitrides, coatings, reactive magnetron sputtering, thin films

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44 Uniform Porous Multilayer-Junction Thin Film for Enhanced Gas-Sensing Performance

Authors: Ping-Ping Zhang, Hui-Zhang, Xu-Hui Sun

Abstract:

Highly-uniform In2O3/CuO bilayer and multilayer porous thin films were successfully fabricated using self-assembled soft template and simple sputtering deposition technique. The sensor based on the In2O3/CuO bilayer porous thin film shows obviously improved sensing performance to ethanol at the lower working temperature, compared to single layer counterpart sensors. The response of In2O3/CuO bilayer sensors exhibits nearly 3 and 5 times higher than those of the single layer In2O3 and CuO porous film sensors over the same ethanol concentration, respectively. The sensing mechanism based on p-n hetero-junction, which contributed to the enhanced sensing performance was also experimentally confirmed by a control experiment which the SiO2 insulation layer was inserted between the In2O3 and CuO layers to break the p-n junction. In addition, the sensing performance can be further enhanced by increasing the number of In2O3/CuO junction layers. The facile process can be easily extended to the fabrication of other semiconductor oxide gas sensors for practical sensing applications.

Keywords: gas sensor, multilayer porous thin films, In2O3/CuO, p-n junction

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43 Structural and Electrical Properties of VO₂/ZnO Nanostructures

Authors: Sang-Wook Han, Zhenlan Jin, In-Hui Hwang, Chang-In Park

Abstract:

We examined structural and electrical properties of uniformly-oriented VO₂/ZnO nanostructures. VO₂ was deposited on ZnO templates by using a direct current-sputtering deposition. Scanning electron microscope and transmission electron microscope measurements indicated that b-oriented VO₂ were uniformly crystallized on ZnO templates with different lengths. VO₂/ZnO formed nanorods on ZnO nanorods with length longer than 250 nm. X-ray absorption fine structure at V K edge of VO₂/ZnO showed M1 and R phases of VO₂ at 30 and 100 ℃, respectively, suggesting structural phase transition between temperatures. Temperature-dependent resistance measurements of VO₂/ZnO nanostructures revealed metal-to-insulator transition at 65 ℃ and 55 ℃ during heating and cooling, respectively, regardless of ZnO length. The bond lengths of V-O and V-V pairs in VO₂/ZnO nanorods were somewhat distorted, and a substantial amount of structural disorder existed in the atomic pairs, compared to those of VO₂ films without ZnO. Resistance from VO₂/ZnO nanorods revealed a sharp MIT near 65 ℃ during heating and a hysteresis behavior. The resistance results suggest that microchannel for charge carriers exist nearly room temperature during cooling. VO₂/ZnO nanorods are quite stable and reproducible so that they can be widely used for practical applications to electronic devices, gas sensors, and ultra-fast switches, as examples.

Keywords: metal-to-insulator transition, VO₂, ZnO, XAFS, structural-phase transition

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42 Sensing Characteristics of Gold Nanoparticles Decorated Sputtered Tin Oxide Thin Films as Nitrogen Oxide Sensor

Authors: Qasem Drmosh, Zain Yamai, Amar Mohamedkhair, Abdulmajid Hendi

Abstract:

In recent years, there has been a growing interest in the reduction of the nitrogen oxides NOx (NO2, NO) gases resulting from automotive or combustion emissions. Recently, metal additives in nanometer dimension onto the surface of SnO2 nanorods, nanowires and nanotubes sensitizer to further increase the sensor response have been used. In contrast, there is a lack study focused on modifying the surface of SnO2 thin films by nanoparticles. The challenge in case of thin films is how to fabricate these nanoparticles on the surfaces in cost-effective method, high purity as well as without hampering electrical and topographical properties. Here in this report, a simple and facile strategy has been demonstrated to acquire high sensitive and fast response NO2 gas sensor. Structural, electrical, morphological, optical, and compositional properties of the fabricated sensors were investigated through different analytical technique including X-ray diffraction (XRD), Field emission scanning emission microscope (FESEM) and X-ray photoelectron spectroscopy (XPS). The sensing performance of the prepared sensors are studied at different temperatures for various concentrations of NO2 and compared with pristine SnO2 film.

Keywords: NO2 sensor, SnO2, sputtering, thin films

Procedia PDF Downloads 184
41 Fe Modified Tin Oxide Thin Film Based Matrix for Reagentless Uric Acid Biosensing

Authors: Kashima Arora, Monika Tomar, Vinay Gupta

Abstract:

Biosensors have found potential applications ranging from environmental testing and biowarfare agent detection to clinical testing, health care, and cell analysis. This is driven in part by the desire to decrease the cost of health care and to obtain precise information more quickly about the health status of patient by the development of various biosensors, which has become increasingly prevalent in clinical testing and point of care testing for a wide range of biological elements. Uric acid is an important byproduct in human body and a number of pathological disorders are related to its high concentration in human body. In past few years, rapid growth in the development of new materials and improvements in sensing techniques have led to the evolution of advanced biosensors. In this context, metal oxide thin film based matrices due to their bio compatible nature, strong adsorption ability, high isoelectric point (IEP) and abundance in nature have become the materials of choice for recent technological advances in biotechnology. In the past few years, wide band-gap metal oxide semiconductors including ZnO, SnO₂ and CeO₂ have gained much attention as a matrix for immobilization of various biomolecules. Tin oxide (SnO₂), wide band gap semiconductor (Eg =3.87 eV), despite having multifunctional properties for broad range of applications including transparent electronics, gas sensors, acoustic devices, UV photodetectors, etc., it has not been explored much for biosensing purpose. To realize a high performance miniaturized biomolecular electronic device, rf sputtering technique is considered to be the most promising for the reproducible growth of good quality thin films, controlled surface morphology and desired film crystallization with improved electron transfer property. Recently, iron oxide and its composites have been widely used as matrix for biosensing application which exploits the electron communication feature of Fe, for the detection of various analytes using urea, hemoglobin, glucose, phenol, L-lactate, H₂O₂, etc. However, to the authors’ knowledge, no work is being reported on modifying the electronic properties of SnO₂ by implanting with suitable metal (Fe) to induce the redox couple in it and utilizing it for reagentless detection of uric acid. In present study, Fe implanted SnO₂ based matrix has been utilized for reagentless uric acid biosensor. Implantation of Fe into SnO₂ matrix is confirmed by energy-dispersive X-Ray spectroscopy (EDX) analysis. Electrochemical techniques have been used to study the response characteristics of Fe modified SnO₂ matrix before and after uricase immobilization. The developed uric acid biosensor exhibits a high sensitivity to about 0.21 mA/mM and a linear variation in current response over concentration range from 0.05 to 1.0 mM of uric acid besides high shelf life (~20 weeks). The Michaelis-Menten kinetic parameter (Km) is found to be relatively very low (0.23 mM), which indicates high affinity of the fabricated bioelectrode towards uric acid (analyte). Also, the presence of other interferents present in human serum has negligible effect on the performance of biosensor. Hence, obtained results highlight the importance of implanted Fe:SnO₂ thin film as an attractive matrix for realization of reagentless biosensors towards uric acid.

Keywords: Fe implanted tin oxide, reagentless uric acid biosensor, rf sputtering, thin film

Procedia PDF Downloads 143
40 Pulse Method for Investigation of Zr-C Phase Diagram at High Carbon Content Domain under High Temperatures

Authors: Arseniy M. Kondratyev, Sergey V. Onufriev, Alexander I. Savvatimskiy

Abstract:

The microsecond electrical pulse heating technique which provides uniform energy input into an investigated specimen is considered. In the present study we investigated ZrC+C carbide specimens in a form of a thin layer (about 5 microns thick) that were produced using a method of magnetron sputtering on insulating substrates. Specimens contained (at. %): Zr–17.88; C–67.69; N–8.13; O–5.98. Current through the specimen, voltage drop across it and radiation at the wavelength of 856 nm were recorded in the experiments. It enabled us to calculate the input energy, specific heat (from 2300 to 4500 K) and resistivity (referred to the initial dimensions of a specimen). To obtain the true temperature a black body specimen was used. Temperature of the beginning and completion of a phase transition (solid–liquid) was measured.Temperature of the onset of melting was 3150 K at the input energy 2.65 kJ/g; temperature of the completion of melting was 3450 K at the input energy 5.2 kJ/g. The specific heat of the solid phase of investigated carbide calculated using our data on temperature and imparted energy, is close to 0.75 J/gК for temperature range 2100–2800 K. Our results are considered together with the equilibrium Zr-C phase diagram.

Keywords: pulse heating, zirconium carbide, high temperatures, melting

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39 Effect of Substrate Temperature on Structure and Properties of Sputtered Transparent Conducting Film of La-Doped BaSnO₃

Authors: Alok Tiwari, Ming Show Wong

Abstract:

Lanthanum (La) doped Barium Tin Oxide (BaSnO₃) film is an excellent alternative for expensive Transparent Conducting Oxides (TCOs) film such as Indium Tin Oxide (ITO). However single crystal film of La-doped BaSnO₃ has been reported with a good amount of conductivity and transparency but in order to improve its reachability, it is important to grow doped BaSO₃ films on an inexpensive substrate. La-doped BaSnO₃ thin films have been grown on quartz substrate by Radio Frequency (RF) sputtering at a different substrate temperature (from 200⁰C to 750⁰C). The thickness of the film measured was varying from 360nm to 380nm with varying substrate temperature. Structure, optical and electrical properties have been studied. The carrier concentration is seen to be decreasing as we enhance the substrate temperature while mobility found to be increased up to 9.3 cm²/V-S. At low substrate temperature resistivity found was lower (< 3x10⁻³ ohm-cm) while sudden enhancement was seen as substrate temperature raises and the trend continues further with increasing substrate temperature. Optical transmittance is getting better with higher substrate temperature from 70% at 200⁰C to > 80% at 750⁰C. Overall, understanding of changes in microstructure, electrical and optical properties of a thin film by varying substrate temperature has been reported successfully.

Keywords: conductivity, perovskite, mobility, TCO film

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38 Design and Fabrication of an Electrostatically Actuated Parallel-Plate Mirror by 3D-Printer

Authors: J. Mizuno, S. Takahashi

Abstract:

In this paper, design and fabrication of an actuated parallel-plate mirror based on a 3D-printer is described. The mirror and electrode layers are fabricated separately and assembled thereafter. The alignment is performed by dowel pin-hole pairs fabricated on the respective layers. The electrodes are formed on the surface of the electrode layer by Au ion sputtering using a suitable mask, which is also fabricated by a 3D-printer.For grounding the mirror layer, except the contact area with the electrode paths, all the surface is Au ion sputtered. 3D-printers are widely used for creating 3D models or mock-ups. The authors have recently proposed that these models can perform electromechanical functions such as actuators by suitably masking them followed by metallization process. Since the smallest possible fabrication size is in the order of sub-millimeters, these electromechanical devices are named by the authors as SMEMS (Sub-Milli Electro-Mechanical Systems) devices. The proposed mirror described in this paper which consists of parallel-plate electrostatic actuators is also one type of SMEMS devices. In addition, SMEMS is totally environment-clean compared to MEMS (Micro Electro-Mechanical Systems) fabrication processes because any hazardous chemicals or gases are utilized.

Keywords: MEMS, parallel-plate mirror, SMEMS, 3D-printer

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37 Characterization of Mg/Sc System for X-Ray Spectroscopy in the Water Window Range

Authors: Hina Verma, Karine Le Guen, Mohammed H. Modi, Rajnish Dhawan, Philippe Jonnard

Abstract:

Periodic multilayer mirrors have potential application as optical components in X-ray microscopy, particularly working in the water window region. The water window range, located between the absorption edges of carbon (285 eV) and oxygen (530eV), along with the presence of nitrogen K absorption edge (395 eV), makes it a powerful method for imaging biological samples due to the natural optical contrast between water and carbon. We characterized bilayer, trilayer, quadrilayer, and multilayer systems of Mg/Sc with ZrC thin layers introduced as a barrier layer and capping layer prepared by ion beam sputtering. The introduction of ZrC as a barrier layer is expected to improve the structure of the Mg/Sc system. The ZrC capping layer also prevents the stack from oxidation. The structural analysis of the Mg/Sc systems was carried out by using grazing incidence X-ray reflectivity (GIXRR) to obtain non-destructively a first description of the structural parameters, thickness, roughness, and density of the layers. Resonant soft X-ray reflectivity measurements in the vicinity of Sc L-absorption edge were performed to investigate and quantify the atomic distribution of deposited layers. Near absorption edge, the atomic scattering factor of an element changes sharply depending on its chemical environment inside the structure.

Keywords: buried interfaces, resonant soft X-ray reflectivity, X-ray optics, X-ray reflectivity

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36 High Responsivity of Zirconium boride/Chromium Alloy Heterostructure for Deep and Near UV Photodetector

Authors: Sanjida Akter, Ambali Alade Odebowale, Andrey E. Miroshnichenko, Haroldo T. Hattori

Abstract:

Photodetectors (PDs) play a pivotal role in optoelectronics and optical devices, serving as fundamental components that convert light signals into electrical signals. As the field progresses, the integration of advanced materials with unique optical properties has become a focal point, paving the way for the innovation of novel PDs. This study delves into the exploration of a cutting-edge photodetector designed for deep and near ultraviolet (UV) applications. The photodetector is constructed with a composite of Zirconium Boride (ZrB2) and Chromium (Cr) alloy, deposited onto a 6H nitrogen-doped silicon carbide substrate. The determination of the optimal alloy thickness is achieved through Finite-Difference Time-Domain (FDTD) simulation, and the synthesis of the alloy is accomplished using radio frequency (RF) sputtering. Remarkably, the resulting photodetector exhibits an exceptional responsivity of 3.5 A/W under an applied voltage of -2 V, at wavelengths of 405 nm and 280 nm. This heterostructure not only exemplifies high performance but also provides a versatile platform for the development of near UV photodetectors capable of operating effectively in challenging conditions, such as environments characterized by high power and elevated temperatures. This study contributes to the expanding landscape of photodetector technology, offering a promising avenue for the advancement of optoelectronic devices in demanding applications.

Keywords: responsivity, silicon carbide, ultraviolet photodetector, zirconium boride

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35 Fabrication and Characterization of Al2O3 Based Electrical Insulation Coatings Around SiC Fibers

Authors: S. Palaniyappan, P. K. Chennam, M. Trautmann, H. Ahmad, T. Mehner, T. Lampke, G. Wagner

Abstract:

In structural-health monitoring of fiber reinforced plastics (FRPs), every single inorganic fiber sensor that are integrated into the bulk material requires an electrical insulation around itself, when the surrounding reinforcing fibers are electrically conductive. This results in a more accurate data acquisition only from the sensor fiber without any electrical interventions. For this purpose, thin nano-films of aluminium oxide (Al2O3)-based electrical-insulation coatings have been fabricated around the Silicon Carbide (SiC) single fiber sensors through reactive DC magnetron sputtering technique. The sputtered coatings were amorphous in nature and the thickness of the coatings increased with an increase in the sputter time. Microstructural characterization of the coated fibers performed using scanning electron microscopy (SEM) confirmed a homogeneous circumferential coating with no detectable defects or cracks on the surface. X-ray diffraction (XRD) analyses of the as-sputtered and 2 hours annealed coatings (825 & 1125 ˚C) revealed the amorphous and crystalline phases of Al2O3 respectively. Raman spectroscopic analyses produced no characteristic bands of Al2O3, as the thickness of the films was in the nanometer (nm) range, which is too small to overcome the actual penetration depth of the laser used. In addition, the influence of the insulation coatings on the mechanical properties of the SiC sensor fibers has been analyzed.

Keywords: Al₂O₃ thin film, electrical insulation coating, PVD process, SiC fibre, single fibre tensile test

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34 Effect of Plasma Treatment on UV Protection Properties of Fabrics

Authors: Sheila Shahidi

Abstract:

UV protection by fabrics has recently become a focus of great interest, particularly in connection with environmental degradation or ozone layer depletion. Fabrics provide simple and convenient protection against UV radiation (UVR), but not all fabrics offer sufficient UV protection. To describe the degree of UVR protection offered by clothing materials, the ultraviolet protection factor (UPF) is commonly used. UV-protective fabric can be generated by application of a chemical finish using normal wet-processing methodologies. However, traditional wet-processing techniques are known to consume large quantities of water and energy and may lead to adverse alterations of the bulk properties of the substrate. Recently, usage of plasmas to generate physicochemical surface modifications of textile substrates has become an intriguing approach to replace or enhance conventional wet-processing techniques. In this research work the effect of plasma treatment on UV protection properties of fabrics was investigated. DC magnetron sputtering was used and the parameters of plasma such as gas type, electrodes, time of exposure, power and, etc. were studied. The morphological and chemical properties of samples were analyzed using Scanning Electron Microscope (SEM) and Furrier Transform Infrared Spectroscopy (FTIR), respectively. The transmittance and UPF values of the original and plasma-treated samples were measured using a Shimadzu UV3101 PC (UV–Vis–NIR scanning spectrophotometer, 190–2, 100 nm range). It was concluded that, plasma which is an echo-friendly, cost effective and dry technique is being used in different branches of the industries, and will conquer textile industry in the near future. Also it is promising method for preparation of UV protection textile.

Keywords: fabric, plasma, textile, UV protection

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33 Influence of Aluminum Content on the Microstructural, Mechanical and Tribological Properties of TiAlN Coatings for Using in Dental and Surgical Instrumentation

Authors: Hernan D. Mejia, Gilberto B. Gaitan, Mauricio A. Franco

Abstract:

420 steel is normally used in the manufacture of dental and surgical instrumentation, as well as parts in the chemical, pharmaceutical, and food industries, among others, where they must withstand heavy loads and often be in contact with corrosive environments, which leads to wear and deterioration of these steels in relatively short times. In the case of medical applications, the instruments made of this steel also suffer wear and corrosion during the repetitive sterilization processes due to the relatively low achievable hardness of just 50 HRC and its hardly acceptable resistance to corrosion. In order to improve the wear resistance of 420 steel, TiAlN coatings were deposited, increasing the aluminum content in the alloy by varying the power applied to the aluminum target of 900, 1100, and 1300 W. Evaluations using XRD, Micro Raman, XPS, AFM, SEM, and TEM showed a columnar growth crystal structure with an average thickness of 2 microns and consisting of the TiN and TiAlN phases, whose roughness and grain size decrease with a higher Al content. The AlN phase also appears in the sample deposited at 1300W. The hardness, determined by nanoindentation, initially increases with the aluminum content from 9.7 GPa to 17.1 GPa, but then decreases to 15.4 GPa for the sample with the highest aluminum content due to the appearance of hexagonal AlN and a decrease of harder TiN and TiAlN phases. It was observed that the wear coefficient had a contrary behavior, which took values of 2.7; 1.7 and 6.6x10⁻⁶ mm³/N.m, respectively. All the coated samples significantly improved the wear resistance of the uncoated 420 steel.

Keywords: hard coatings, magnetron sputtering, TiAlN coatings, surgical instruments, wear resistance

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32 Ti-Mo-N Nano-Grains Embedded into Thin MoSₓ-Based Amorphous Matrix: A Novel Structure for Superhardness and Ultra-Low Wear

Authors: Lina Yang, Mao Wen, Jianhong Chen, Kan Zhang

Abstract:

Molybdenum disulfide (MoS₂) represents a highly sought lubricant for reducing friction based on intrinsic layered structure, but for this reason, practical applications have been greatly restricted due to the fact that its low hardness would cause severe wear. Here, a novel TiMoN/MoSₓ composite coatings with TiMoN solid solution grains embedded into MoSₓ-based amorphous matrix has been successfully designed and synthesized, through magnetron co-sputtering technology. Desirably, in virtue of such special microstructure, superhardness and excellent toughness can be well achieved, along with an ultra-low wear rate at ~2×10⁻¹¹ mm³/Nm in the air environment, simultaneously, low friction at ~0.1 is maintained. It should be noted that this wear level is almost two orders of magnitude lower than that of pure TiN coating, and is, as we know, the lowest wear rate in dry sliding. Investigations of tribofilm reveal that it is amorphous MoS₂ in nature, and its formation arises directly from the MoSₓ amorphous matrix. Which contributes to effective lubrication behavior, coupled with excellent mechanical performances of such composite coating, exceptionally low wear can be guaranteed. The findings in this work suggest that the special composite structure makes it possible for the synthesis of super-hard and super-durable lubricative coating, offering guidance to synthesize ultrahigh performance protective coating for industrial application.

Keywords: hardness, MoS₂-containing composite coatings, toughness, tribological properties

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31 Mechanical and Optical Properties of Doped Aluminum Nitride Thin Films

Authors: Padmalochan Panda, R. Ramaseshan

Abstract:

Aluminum nitride (AlN) is a potential candidate for semiconductor industry due to its wide band gap (6.2 eV), high thermal conductivity and low thermal coefficient of expansion. A-plane oriented AlN film finds an important role in deep UV-LED with higher isotropic light extraction efficiency. Also, Cr-doped AlN films exhibit dilute magnetic semiconductor property with high Curie temperature (300 K), and thus compatible with modern day microelectronics. In this work, highly a-axis oriented wurtzite AlN and Al1-xMxN (M = Cr, Ti) films have synthesized by reactive co-sputtering technique at different concentration. Crystal structure of these films is studied by Grazing incidence X-ray diffraction (GIXRD) and Transmission electron microscopy (TEM). Identification of binding energy and concentration (x) in these films is carried out by X-ray photoelectron spectroscopy (XPS). Local crystal structure around the Cr and Ti atom of these films are investigated by X-ray absorption spectroscopy (XAS). It is found that Cr and Ti replace the Al atom in AlN lattice and the bond lengths in first and second coordination sphere with N and Al, respectively, decrease concerning doping concentration due to strong p-d hybridization. The nano-indentation hardness of Cr and Ti-doped AlN films seems to increase from 17.5 GPa (AlN) to around 23 and 27.5 GPa, respectively. An-isotropic optical properties of these films are studied by the Spectroscopic Ellipsometry technique. Refractive index and extinction coefficient of these films are enhanced in normal dispersion region as compared to the parent AlN film. The optical band gap energies also seem to vary between deep UV to UV regions with the addition of Cr, thus by bringing out the usefulness of these films in the area of optoelectronic device applications.

Keywords: ellipsometry, GIXRD, hardness, XAS

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30 Size-Controlled Synthesis of Bismuth Nanoparticles by Temperature Assisted Pulsed Laser Deposition

Authors: Ranjit A. Patil, Yung Liou, Yuan-Ron Ma

Abstract:

It has been observed that when the size of metals such as, Au, Zn, Ag, Cu, Te, and metal oxides is reduced to several nano-meters, it starts to show further interesting properties. These new properties boost the use of nano-structures to produce attractive functional materials or used as promising building blocks in electronic devices. Present work describes the synthesis of bismuth (Bi) nanoparticles (NP’s) having uniform morphology, high crystallinity, and single phase purity by the temperature assisted pulsed laser deposition (TAPLD). Pulsed Laser deposition (PLD) technique is one of the promising methods to synthesize nano-structures. It can provide the stable nucleation sites in orders of magnitudes higher than for MBE and sputtering deposition. The desired size of purely metallic Bi NP’s of can be easily controlled by adjusting the temperature of the substrate varying from 1000 C to 250 0C. When the temperatures of the substrate raised step wise the average size of Bi NP’s appeared to be increased by maintaining the uniform distribution of NP’s on the Si surfaces. The diameter range of NP’s is ~33-84 nm shows size distribution constrained in the limited range. The EDS results show that the 0D Bi NP’s synthesized at high temperature (250 0C) at a high vacuum still remained in a metallic phase. Moreover, XRD, TEM and SAED results showed that these Bi NP’s are hexagonal in crystalline in a space group R -3 m and no traces of bismuth oxide, confirming that Bi NP’s synthesized at wide range of temperatures persisted of the pure Bi-metallic phase.

Keywords: metal nano particles, bismuth, pulsed laser deposition (PLD), nano particles, temperature assisted growth

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29 Microfluidic Impedimetric Biochip and Related Methods for Measurement Chip Manufacture and Counting Cells

Authors: Amina Farooq, Nauman Zafar Butt

Abstract:

This paper is about methods and tools for counting particles of interest, such as cells. A microfluidic system with interconnected electronics on a flexible substrate, inlet-outlet ports and interface schemes, sensitive and selective detection of cells specificity, and processing of cell counting at polymer interfaces in a microscale biosensor for use in the detection of target biological and non-biological cells. The development of fluidic channels, planar fluidic contact ports, integrated metal electrodes on a flexible substrate for impedance measurements, and a surface modification plasma treatment as an intermediate bonding layer are all part of the fabrication process. Magnetron DC sputtering is used to deposit a double metal layer (Ti/Pt) over the polypropylene film. Using a photoresist layer, specified and etched zones are established. Small fluid volumes, a reduced detection region, and electrical impedance measurements over a range of frequencies for cell counts improve detection sensitivity and specificity. The procedure involves continuous flow of fluid samples that contain particles of interest through the microfluidic channels, counting all types of particles in a portion of the sample using the electrical differential counter to generate a bipolar pulse for each passing cell—calculating the total number of particles of interest originally in the fluid sample by using MATLAB program and signal processing. It's indeed potential to develop a robust and economical kit for cell counting in whole-blood samples using these methods and similar devices.

Keywords: impedance, biochip, cell counting, microfluidics

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28 Studies on the Characterization and Machinability of Duplex Stainless Steel 2205 during Dry Turning

Authors: Gaurav D. Sonawane, Vikas G. Sargade

Abstract:

The present investigation is a study of the effect of advanced Physical Vapor Deposition (PVD) coatings on cutting temperature residual stresses and surface roughness during Duplex Stainless Steel (DSS) 2205 turning. Austenite stabilizers like nickel, manganese, and molybdenum reduced the cost of DSS. Surface Integrity (SI) plays an important role in determining corrosion resistance and fatigue life. Resistance to various types of corrosion makes DSS suitable for applications with critical environments like Heat exchangers, Desalination plants, Seawater pipes and Marine components. However, lower thermal conductivity, poor chip control and non-uniform tool wear make DSS very difficult to machine. Cemented carbide tools (M grade) were used to turn DSS in a dry environment. AlTiN and AlTiCrN coatings were deposited using advanced PVD High Pulse Impulse Magnetron Sputtering (HiPIMS) technique. Experiments were conducted with cutting speed of 100 m/min, 140 m/min and 180 m/min. A constant feed and depth of cut of 0.18 mm/rev and 0.8 mm were used, respectively. AlTiCrN coated tools followed by AlTiN coated tools outperformed uncoated tools due to properties like lower thermal conductivity, higher adhesion strength and hardness. Residual stresses were found to be compressive for all the tools used for dry turning, increasing the fatigue life of the machined component. Higher cutting temperatures were observed for coated tools due to its lower thermal conductivity, which results in very less tool wear than uncoated tools. Surface roughness with uncoated tools was found to be three times higher than coated tools due to lower coefficient of friction of coating used.

Keywords: cutting temperature, DSS2205, dry turning, HiPIMS, surface integrity

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27 Qusai-Solid-State Electrochromic Device Based on PolyMethyl Methacrylate (PMMA)/Succinonitrile Gel Polymer Electrolyte

Authors: Jen-Yuan Wang, Min-Chuan Wang, Der-Jun Jan

Abstract:

Polymer electrolytes can be classified into four major categories, solid polymer electrolytes (SPEs), gel polymer electrolytes (GPEs), polyelectrolytes and composite polymer electrolytes. SPEs suffer from low ionic conductivity at room temperature. The main problems for GPEs are the poor thermal stability and mechanical properties. In this study, a GPE containing PMMA and succinonitrile is prepared to solve the problems mentioned above, and applied to the assembly of a quasi-solid-state electrochromic device (ECD). In the polymer electrolyte, poly(methyl methacrylate) (PMMA) is the polymer matrix and propylene carbonate (PC) is used as the plasticizer. To enhance the mechanical properties of this GPE, succinonitrile (SN) is introduced as the additive. For the electrochromic materials, tungsten oxide (WO3) is used as the cathodic coloring film, which is fabricated by pulsed dc magnetron reactive sputtering. For the anodic coloring material, Prussian blue nanoparticles (PBNPs) are synthesized and coated on the transparent Sn-doped indium oxide (ITO) glass. The thickness of ITO, WO3 and PB film is 110, 170 and 200 nm, respectively. The size of the ECD is 5×5 cm2. The effect of the introduction of SN into the GPEs is discussed by observing the electrochromic behaviors of the WO3-PB ECD. Besides, the composition ratio of PC to SN is also investigated by measuring the ionic conductivity. The optimized ratio of PC to SN is 4:1, and the ionic conductivity under this condition is 6.34x10-5 S∙cm-1, which is higher than that of PMMA/PC (1.35x10-6 S∙cm-1) and PMMA/EC/PC (4.52x10-6 S∙cm-1). This quasi-solid-state ECD fabricated with the PMMA/SN based GPE shows an optical contrast of ca. 53% at 690 nm. The optical transmittance of the ECD can be reversibly modulated from 72% (bleached) to 19% (darkened), by applying potentials of 1.5 and -2.2 V, respectively. During the durability test, the optical contrast of this ECD remains 44.5% after 2400 cycles, which is 83% of the original one.

Keywords: electrochromism, tungsten oxide, prussian blue, poly(methyl methacrylate), succinonitrile

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26 Infrared Photodetectors Based on Nanowire Arrays: Towards Far Infrared Region

Authors: Mohammad Karimi, Magnus Heurlin, Lars Samuelson, Magnus Borgstrom, Hakan Pettersson

Abstract:

Nanowire semiconductors are promising candidates for optoelectronic applications such as solar cells, photodetectors and lasers due to their quasi-1D geometry and large surface to volume ratio. The functional wavelength range of NW-based detectors is typically limited to the visible/near-infrared region. In this work, we present electrical and optical properties of IR photodetectors based on large square millimeter ensembles (>1million) of vertically processed semiconductor heterostructure nanowires (NWs) grown on InP substrates which operate in longer wavelengths. InP NWs comprising single or multiple (20) InAs/InAsP QDics axially embedded in an n-i-n geometry, have been grown on InP substrates using metal organic vapor phase epitaxy (MOVPE). The NWs are contacted in vertical direction by atomic layer deposition (ALD) deposition of 50 nm SiO2 as an insulating layer followed by sputtering of indium tin oxide (ITO) and evaporation of Ti and Au as top contact layer. In order to extend the sensitivity range to the mid-wavelength and long-wavelength regions, the intersubband transition within conduction band of InAsP QDisc is suggested. We present first experimental indications of intersubband photocurrent in NW geometry and discuss important design parameters for realization of intersubband detectors. Key advantages with the proposed design include large degree of freedom in choice of materials compositions, possible enhanced optical resonance effects due to periodically ordered NW arrays and the compatibility with silicon substrates. We believe that the proposed detector design offers the route towards monolithic integration of compact and sensitive III-V NW long wavelength detectors with Si technology.

Keywords: intersubband photodetector, infrared, nanowire, quantum disc

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25 Characterization of Single-Walled Carbon Nano Tubes Forest Decorated with Chromium

Authors: Ana Paula Mousinho, Ronaldo D. Mansano, Nelson Ordonez

Abstract:

Carbon nanotubes are one of the main elements in nanotechnologies; their applications are in microelectronics, nano-electronics devices (photonics, spintronic), chemical sensors, structural material and currently in clean energy devices (supercapacitors and fuel cells). The use of magnetic particle decorated carbon nanotubes increases the applications in magnetic devices, magnetic memory, and magnetic oriented drug delivery. In this work, single-walled carbon nanotubes (CNTs) forest decorated with chromium were deposited at room temperature by high-density plasma chemical vapor deposition (HDPCVD) system. The CNTs forest was obtained using pure methane plasmas and chromium, as precursor material (seed) and for decorating the CNTs. Magnetron sputtering deposited the chromium on silicon wafers before the CNTs' growth. Scanning electron microscopy, atomic force microscopy, micro-Raman spectroscopy, and X-ray diffraction characterized the single-walled CNTs forest decorated with chromium. In general, the CNTs' spectra show a unique emission band, but due to the presence of the chromium, the spectra obtained in this work showed many bands that are related to the CNTs with different diameters. The CNTs obtained by the HDPCVD system are highly aligned and showed metallic features, and they can be used as photonic material, due to the unique structural and electrical properties. The results of this work proved the possibility of obtaining the controlled deposition of aligned single-walled CNTs forest films decorated with chromium by high-density plasma chemical vapor deposition system.

Keywords: CNTs forest, high density plasma deposition, high-aligned CNTs, nanomaterials

Procedia PDF Downloads 91