Search results for: silicon germanium photonic waveguide

Authors: M. A. Bayona, E. M. Cordoba, V. R. Guiza

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Highly porous carbon-based foams are used in a wide range of industrial applications, which include absorption, catalyst supports, thermal insulation, and biomaterials, among others. Particularly, silicon carbide (SiC) based foams have shown exceptional potential for catalyst support applications, due to their chemical inertness, large frontal area, low resistance to flow, low-pressure drop, as well as high resistance to temperature and corrosion. These properties allow the use of SiC foams in harsh environments with high durability. Commonly, SiC foams are fabricated from polysiloxane, SiC powders and phenolic resins, which can be costly or highly toxic to the environment. In this work, we propose a low-cost method for the fabrication of highly porous, three-dimensional SiC foams via template replica, using recycled polymeric sponges as sacrificial templates. A sucrose-based resin combined with a Si-containing pre-ceramic polymer was used as the precursor. Polymeric templates were impregnated with the precursor solution, followed by thermal treatment at 1500 °C under an inert atmosphere. Several synthesis parameters, such as viscosity and composition of the precursor solution (Si: Sucrose molar ratio), and the porosity of the template, were evaluated in terms of their effect on the morphology, composition and mechanical resistance of the resulting SiC foams. The synthesized composite foams exhibited a highly porous (50-90%) and interconnected structure, containing 30-90% SiC with a mechanical compressive strength between 0.01-0.1 MPa. The methodology employed here allowed the fabrication of foams with a varied concentration of SiC and with morphological and mechanical properties that contribute to the development of materials of high relevance in the industry, while using low-cost, renewable sources such as table sugar, and providing a recycling alternative for polymeric sponges.

Keywords: catalyst support, polymer replica technique, reticulated porous ceramics, silicon carbide

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Authors: Janella Salamania, Marcedon Fernandez, Matthew Villanueva Henry Ramos

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Titanium nitrite (TiN) a popular functional and decorative coating because of its golden yellow color, high hardness and superior wear resistance. It is also being studied as a diffusion barrier in integrated circuits due to its known chemical stability and low resistivity. While there have been numerous deposition methods done for TiN, most required the heating of substrates at high temperatures. In this work, TiN films are deposited on silicon (111) and (100) substrates without substrate heating using a patented magnetized sheet plasma source. Films were successfully deposited without substrate heating at various target bias, while maintaining a constant 25% N2 to Ar ratio, and deposition of time of 30 minutes. The resulting films exhibited a golden yellow color which is characteristic of TiN. X-ray diffraction patterns show the formation of TiN predominantly oriented in the (111) direction regardless of substrate used. EDX data also confirms the 1:1 stoichiometry of titanium an nitrogen. Ellipsometry measurements estimate the thickness to range from 28 nm to 33 nm. SEM images were also taken to observe the morphology of the film.

Keywords: coatings, nitrides, coatings, reactive magnetron sputtering, thin films

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Authors: Arezoo Rahmani, Rinez Thapa, Juha-Matti Aalto, Petri Turhanen, Jouko Vepsalainen, Vesa-PekkaLehto, Joakim Riikonen

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Production of Scandium (Sc) is a complicated process because Sc is found only in low concentrations in ores and the concentration of Sc is very low compared with other metals. Therefore, utilization of typical extraction processes such as solvent extraction is problematic in scandium extraction. The Adsorption/desorption method can be used, but it is challenging to prepare materials, which have good selectivity, high adsorption capacity, and high stability. Therefore, efficient and environmentally friendly methods for Sc extraction are needed. In this study, the nanoporous composite material was developed for extracting Sc from an Sc ore. The nanoporous composite material offers several advantageous properties such as large surface area, high chemical and mechanical stability, fast diffusion of the metals in the material and possibility to construct a filter out of the material with good flow-through properties. The nanoporous silicon material was produced by first stabilizing the surfaces with a silicon carbide layer and then functionalizing the surface with bisphosphonates that act as metal chelators. The surface area and porosity of the material were characterized by N₂ adsorption and the morphology was studied by scanning electron microscopy (SEM). The bisphosphonate content of the material was studied by thermogravimetric analysis (TGA). The concentration of metal ions in the adsorption/desorption experiments was measured with inductively coupled plasma mass spectrometry (ICP-MS). The maximum capacity of the material was 25 µmol/g Sc at pH=1 and 45 µmol/g Sc at pH=3, obtained from adsorption isotherm. The selectivity of the material towards Sc in artificial solutions containing several metal ions was studied at pH one and pH 3. The result shows good selectivity of the nanoporous composite towards adsorption of Sc. Scandium was less efficiently adsorbed from solution leached from the ore of Sc because of excessive amounts of iron (Fe), aluminum (Al) and titanium (Ti) which disturbed the adsorption process. For example, the concentration of Fe was more than 4500 ppm, while the concentration of Sc was only three ppm, approximately 1500 times lower. Precipitation methods were developed to lower the concentration of the metals other than Sc. Optimal pH for precipitation was found to be pH 4. The concentration of Fe, Al and Ti were decreased by 99, 70, 99.6%, respectively, while the concentration of Sc decreased only 22%. Despite the large reduction in the concentration of other metals, more work is needed to further increase the relative concentration of Sc compared with other metals to efficiently extract it using the developed nanoporous composite material. Nevertheless, the developed material may provide an affordable, efficient and environmentally friendly method to extract Sc on a large scale.

Keywords: adsorption, nanoporous silicon, ore solution, scandium

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Authors: Asif Jan

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Sodium hypochlorite (NaClO) is a common cleaning agent for ultrafiltration (UF) membranes. While its detrimental effects on polymeric membranes are well-documented, its impact on ceramic membranes remains less explored. This study investigates the chemical stability of silicon carbide (SiC) UF membranes prepared using low-pressure chemical vapor deposition (LP-CVD) during prolonged NaClO exposure. SiC UF membranes were fabricated via LP-CVD at two different temperature and pressure conditions. LP-CVD offers the advantage of SiC membrane fabrication at significantly lower temperatures (700-900°C) compared to conventional methods. The membranes were subjected to 200 hours of NaClO aging to assess their resilience. Before and after aging, we evaluated the properties and performance of the SiC UF membranes to identify optimal LP-CVD conditions. Our findings show that SiC UF membranes produced at 860°C via LP-CVD exhibit exceptional resistance to NaClO aging, whereas those prepared at 750°C experience significant deterioration. This highlights the crucial role of precise LP-CVD parameters in ensuring the robustness and long-term performance of SiC membranes in harsh chemical cleaning environments.

Keywords: ceramic membranes, ultrafiltration membranes, wastewater treatment, chemical vapor deposition

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Authors: Asim Quddus

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A miniaturized three dimensional co-planar waveguide (CPW) two-port MIMO antenna, exhibiting high isolation and WLAN band-notched characteristics is presented in this paper for ultrawideband (UWB) communication applications. The microstrip patch antenna operates as a single UWB antenna element. The proposed design is a cuboid-shaped structure having compact size of 35 x 27 x 45 mm³. Radiating as well as decoupling structure is placed around cuboidal polystyrene sheet. The radiators are 27 mm apart, placed Face-to-Face in vertical direction. Decoupling structure is placed on the side walls of polystyrene. The proposed antenna consists of an oval shaped radiating patch. A rectangular structure with fillet edges is placed on ground plan to enhance the bandwidth. The proposed antenna exhibits a good impedance match (S11 ≤ -10 dB) over frequency band of 2 GHz – 10.6 GHz. A circular slotted structure is employed as a decoupling structure on substrate, and it is placed on the side walls of polystyrene to enhance the isolation between antenna elements. Moreover, to achieve immunity from WLAN band distortion, a modified, inverted crescent shaped slotted structure is etched on radiating patches to achieve band-rejection characteristics at WLAN frequency band 4.8 GHz – 5.2 GHz. The suggested decoupling structure provides isolation better than 15 dB over the desired UWB spectrum. The envelope correlation coefficient (ECC) and gain for the MIMO antenna are analyzed as well. Finite Element Method (FEM) simulations are carried out in Ansys High Frequency Structural Simulator (HFSS) for the proposed design. The antenna is realized on a Rogers RT/duroid 5880 with thickness 1 mm, relative permittivity ɛr = 2.2. The proposed antenna achieves a stable omni-directional radiation patterns as well, while providing rejection at desired WLAN band. The S-parameters as well as MIMO parameters like ECC are analyzed and the results show conclusively that the design is suitable for portable MIMO-UWB applications.

Keywords: 3-D antenna, band-notch, MIMO, UWB

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Authors: Wheyming Song, Ssu-Ping Lin

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The primary advantage of package-on-package (PoP) packaging is that since it has less volume, it weighs less. But this is also related to its principal drawback, which is warpage. This research investigates how PoP package warpage patterns are affected by assembling process parameters, including substrate temperature, injection speed, injection temperature, and compound forces. We also investigate how warpage patterns are affected by the location of the silicon chip. The methodologies used in this research are design of experiment and warpage simulation via ANSYS. We propose a regression model to predict the warpage value as a function of substrate temperature, injection speed, injection temperature, and compound forces. Our results show that interaction effects exist between substrate temperature and compound forces and between injection speed and injection temperature. Therefore, determining the optimal values for substrate temperature, compound forces, injection speed, and injection temperature cannot be done individually. Also, our results show that the warpage patterns based on the location of silicon chips can be classified into 11 groups, with the largest warpage occurring at the left-most and right-most sides.

Keywords: package-on-package, warpage, design of experiment, simulation

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Authors: Martin Juckel

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Probably no other field of inorganic chemistry has undergone such a rapid development in the past two decades than the low oxidation state chemistry of main group elements. This rapid development has only been possible by the development of new bulky ligands. In case of our research group, super-bulky monodentate amido ligands and β-diketiminate ligands have been used to a great success. We first synthesized the unprecedented magnesium(I) dimer [ᴹᵉˢNacnacMg]₂ (ᴹᵉˢNacnac = [(ᴹᵉˢNCMe)₂CH]-; Mes = mesityl, which has since been used both as reducing agent and also for the synthesis of new metal-magnesium bonds. In case of the zinc bromide precursor [L*ZnBr] (L*=(N(Ar*)(SiPri₃); (Ar* = C₆H₂{C(H)Ph₂}₂Me-2,6,4, the reduction with [ᴹᵉˢNacnacMg]₂ led to such a metal-magnesium bond. This [L*ZnMg(ᴹᵉˢNacnac)] compound can be seen as an ‘inorganic Grignard reagent’, which can be used to transfer the metal fragment onto other functional groups or other metal centers; just like the conventional Grignard reagent. By simple addition of (TBoN)GeCl (TBoN = N(SiMe₃){B(DipNCH)₂) to the aforesaid compound, we were able to transfer the amido-zinc fragment to the Ge center of the germylene starting material and to synthesize the first example of a germanium(II)-zinc bond: [:Ge(TBoN)(ZnL*)]. While these reactions typically led to complex product mixture, [:Ge(TBoN)(ZnL*)] could be isolated as dark blue crystals in a good yield. This new compound shows interesting reactivity towards small molecules, especially dihydrogen gas. This is of special interest as dihydrogen is one of the more difficult small molecules to activate, due to its strong (BDE = 108 kcal/mol) and non-polar bond. In this context, the interaction between H₂ σ-bond with the tetrelylene p-Orbital (LUMO), with concomitant donation of the tetrelylene lone pair (HOMO) into the H₂ σ* orbital are responsible for the activation of dihydrogen gas. Accordingly, the narrower the HOMO-LUMO gap of tertelylene, the more reactivity towards H₂ it typically is. The aim of a narrow HOMO-LUMO gap was reached by transferring electropositive substituents respectively metal substituents with relatively low Pauling electronegativity (zinc: 1.65) onto the Ge center (here: the zinc-amido fragment). In consideration of the unprecedented reactivity of [:Ge(TBoN)(ZnL*)], a computational examination of its frontier orbital energies was undertaken. The energy separation between the HOMO, which has significant Ge lone pair character, and the LUMO, which has predominantly Ge p-orbital character, is narrow (40.8 kcal/mol; cf.∆S-T= 24.8 kcal/mol), and comparable to the HOMO-LUMO gaps calculated for other literature known complexes). The calculated very narrow HOMO-LUMO gap for the [:Ge(TBoN)(ZnL*)] complex is consistent with its high reactivity, and is remarkable considering that it incorporates a π-basic amide ligand, which are known to raise the LUMO of germylenes considerably.

Keywords: activation of dihydrogen gas, narrow HOMO-LUMO gap, first germanium(II)-zinc bond, inorganic Grignard reagent

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Authors: Jingjing Lan, Jun Yu, Muthukumaraswamy Annamalai Arasu

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This paper presents a digital non-linear pulse-width modulation (PWM) controller in a high-voltage (HV) buck-boost DC-DC converter for the piezoelectric transducer of the down-hole acoustic telemetry system. The proposed design controls the generation of output signal with voltage higher than the supply voltage and is targeted to work under high temperature. To minimize the power consumption and silicon area, a simple and efficient design scheme is employed to develop the PWM controller. The proposed PWM controller consists of serial to parallel (S2P) converter, data assign block, a mode and duty cycle controller (MDC), linearly PWM (LPWM) and noise shaper, pulse generator and clock generator. To improve the reliability of circuit operation at higher temperature, this design is fabricated with the 1.0-μm silicon-on-insulator (SOI) CMOS process. The implementation results validated that the proposed design has the advantages of smaller size, lower power consumption and robust thermal stability.

Keywords: DC-DC power conversion, digital control, high temperatures, pulse-width modulation

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Authors: Alka Jakhar, Harmanpreet Kaur Sandhu, Samaresh Das

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The Terahertz (THz) technology-based devices are heightening at an alarming rate on account of the wide range of applications in imaging, security, communication, and spectroscopic field. The various available room operational THz detectors, including Golay cell, pyroelectric detector, field-effect transistors, and photoconductive antennas, have some limitations such as narrow-band response, slow response speed, transit time limits, and complex fabrication process. There is an urgent demand to explore new materials and device structures to accomplish efficient THz detection systems. Recently, TMDs including topological semimetals and topological insulators such as PtSe₂, MoTe₂, WSe₂, and PtTe₂ provide novel feasibility for photonic and optical devices. The peculiar properties of these materials, such as Dirac cone, fermions presence, nonlinear optical response, high conductivity, and ambient stability, make them worthy for the development of the THz devices. Here, the platinum telluride (PtTe₂) based devices have been demonstrated for THz detection in the frequency range of 0.1-1 THz. The PtTe₂ is synthesized by direct selenization of the sputtered platinum film on the high-resistivity silicon substrate by using the chemical vapor deposition (CVD) method. The Raman spectra, XRD, and XPS spectra confirm the formation of the thin PtTe₂ film. The PtTe₂ channel length is 5µm and it is connected with a bow-tie antenna for strong THz electric field confinement in the channel. The characterization of the devices has been carried out in a wide frequency range from 0.1-1 THz. The induced THz photocurrent is measured by using lock-in-amplifier after preamplifier. The maximum responsivity is achieved up to 1 A/W under self-biased mode. Further, this responsivity has been increased by applying biasing voltage. This photo response corresponds to low energy THz photons is mainly due to the photo galvanic effect in PtTe₂. The DC current is induced along the PtTe₂ channel, which is directly proportional to the amplitude of the incident THz electric field. Thus, these new topological semimetal materials provide new pathways for sensitive detection and sensing applications in the THz domain.

Keywords: terahertz, detector, responsivity, topological-semimetals

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Authors: Dar-Bin Shieh, Gwo-Bin Lee, Chen-Ming Chang, Chen Sheng Yeh, Chih-Chia Huang, Tsung-Ju Li

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Mitochondrial defects have a significant impact in many human diseases and aging associated phenotypes. The pathogenic mitochondrial DNA (mtDNA) mutations are diverse and usually present as heteroplasmic. mtDNA 4977bps deletion is one of the common mtDNA defects, and the ratio of mutated versus normal copy is significantly associated with clinical symptoms thus their quantitative detection has become an important unmet needs for advanced disease diagnosis and therapeutic guidelines. This study revealed a Micro-electro-mechanical-system (MEMS) enabled automatic microfluidic chip that only required minimal sample. The system integrated multiple laboratory operation steps into a Lab-on-a-Chip for high-sensitive and prompt measurement. The entire process including magnetic nanoparticle based mtDNA extraction in chip, mutation selective photonic DNA cleavage, and nanoparticle accelerated photonic quantitative polymerase chain reaction (qPCR). All subsystems were packed inside a miniature three-dimensional micro structured system and operated in an automatic manner. Integration of magnetic beads with microfluidic transportation could promptly extract and enrich the specific mtDNA. The near infrared responsive magnetic nanoparticles enabled micro-PCR to be operated by pulse-width-modulation controlled laser pulsing to amplify the desired mtDNA while quantified by fluorescence intensity captured by a complementary metal oxide system array detector. The proportions of pathogenic mtDNA in total DNA were thus obtained. Micro capillary electrophoresis module was used to analyze the amplicone products. In conclusion, this study demonstrated a new magnetophotonic based qPCR MEMS system that successfully detects and quantify specific disease related DNA mutations thus provides a promising future for rapid diagnosis of mitochondria diseases.

Keywords: mitochondrial DNA, micro-electro-mechanical-system, magnetophotonics, PCR

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Authors: Anton Trník, Lenka Scheinherrová, Robert Černý

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Silica fume is a by-product of the ferro-silicon and silicon metal industries. It is mainly in the form of amorphous silica. Silica fume belongs to pozzolanic active materials which can be used in concrete to improve its final properties. In this paper, the influence of silica fume on hydration of cement pastes is studied using differential scanning calorimetry (DSC) and thermogravimetry (TG) at various curing times (2, 7, 28, and 90 days) in the temperature range from 25 to 1000 °C in an argon atmosphere. Samples are prepared from Portland cement CEM I 42.5 R which is partially replaced with the silica fume of 4, 8, and 12 wt.%. The water/binder ratio is chosen as 0.5. It is identified and described the liberation of physically bound water, calcium–silicate–hydrates dehydration, portlandite and calcite decomposition in studied samples. Also, it is found out that an exothermic peak at 950 °C is observed without a significant mass change for samples with 12 wt.% of silica fume after two days of hydration. This peak is probably caused by the pozzolanic reaction between silica fume and Portland cement. Its size corresponds to the degree of crystallization between Ca and Si. The portlandite content is lower for the samples with a higher amount of silica fume.

Keywords: differential scanning calorimetry, hydration, silica fume, thermogravimetry

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Authors: Sajjad Esmaeili, Robert Krause, Lukas Gerlich, Alireza Mohammadian Kia, Benjamin Uhlig

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This investigation aims to develop the feasible and qualitative process parameters for the thin films fabrication into ultra-large through-silicon-vias (TSVs) as vertical interconnections. The focus of the study is on TSV metallization and its challenges employing new materials for the purpose of rapid signal propagation in the microsystems technology. Cobalt metal-organic chemical vapor deposition (Co-MOCVD) process enables manufacturing an adhesive and excellent conformal ultra-thin film all the way through TSVs in comparison with the conventional non-conformal physical vapor deposition (PVD) process of copper (Cu) seed layer. Therefore, this process provides a Cu seed-free layer which is capable of direct Cu electrochemical deposition (Cu-ECD) on top of it. The main challenge of this metallization module is to achieve the proper alternative seed layer with less roughness, sheet resistance and granular organic contamination (e.g. carbon) which intensify the Co corrosion under the influence of Cu electrolyte.

Keywords: Cobalt MOCVD, direct Cu electrochemical deposition (ECD), metallization technology, through-silicon-via (TSV)

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Authors: A. El Hamdouni, J. Zbitou, A. Tajmouati, L. El Abdellaoui, A. Errkik, A. Tribak, M. Latrach

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This paper presents a novel fractal antenna structure proposed for UWB (Ultra – Wideband) applications. The frequency band 3.1-10.6 GHz released by FCC (Federal Communication Commission) as the commercial operation of UWB has been chosen as frequency range for this antenna based on coplanar waveguide (CPW) feed and circular shapes fulfilled according to fractal geometry. The proposed antenna is validated and designed by using an FR4 substrate with overall area of 34 x 43 mm2. The simulated results performed by CST-Microwave Studio and compared by ADS (Advanced Design System) show good matching input impedance with return loss less than -10 dB between 2.9 GHz and 11 GHz.

Keywords: Fractal antenna, Fractal Geometry, CPW Feed, UWB, FCC

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Authors: Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu

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In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage V_B. A low turn-on resistance R_ON (3.55 mΩ-cm²), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage V_B (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was L_AC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of V_B²/ R_ON = 60.2 MW/cm², whereas devices with the field plate design show a Baliga’s figure of merit of V_B²/ R_ON = 340.9 MW/cm² (the anode–cathode distance was L_AC = 20 µm).

Keywords: AlGaN/GaN heterostructure, silicon substrate, Schottky barrier diode (SBD), high breakdown voltage, Baliga’s figure-of-merit, field plate

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Authors: Govind Sharma, Harpreet S. Kainth

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Rayleigh scattering differential cross sections have been measured for the 36.84 keV (60Nd Kα2), 37.36 keV (60Nd Kα1) and 42.27 keV (60Nd Kβ1,3) X-rays. These measurements have been done in 44 elements with 22 ≤ Z ≤ 90 at an angle of 1390. The measurements are performed by using a radiation source consisting of an annular 60Nd foil excited by the 59.54 KeV γ-ray photons from 241Am radioactive source. The Nd Kα2, Kβ1,3 X-ray photons from the 60Nd annular foil (secondary photon source) are made to scatter from the target and the scattered photons are detected using Canberra made low energy Germanium (LEGe) detector. The measured Rayleigh scattering cross sections are compared with the theoretical MF, MFASF and the SM values. The noticeable deviations are observed from the MF, MFASF and SM values for 36.84 keV (60Nd Kα2), 37.36 keV (60Nd Kα1) and 42.27 keV (60Nd Kβ1,3) X-rays.

Keywords: Photon-electron interaction, Rayleigh scattering, X-ray fluorescence, X-ray

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Authors: Tomas Vincze, Michal Micjan, Milan Pavuk, Martin Weis

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In recent years, alternative materials are gaining attention to replace polycrystalline and amorphous silicon, which are a standard for low requirement devices, where silicon is unnecessarily and high cost. For that reason, metal oxides are envisioned as the new materials for these low-requirement applications such as sensors, solar cells, energy storage devices, or field-effect transistors. Their most common way of layer growth is sputtering; however, this is a high-cost fabrication method, and a more industry-suitable alternative is the sol-gel method. In this group of materials, many oxides exhibit a semiconductor-like behavior with sufficiently high mobility to be applied as transistors. The sol-gel method is a cost-effective deposition technique for semiconductor-based devices. Copper oxides, as p-type semiconductors with free charge mobility up to 1 cm2/Vs., are suitable replacements for poly-Si or a-Si:H devices. However, to reach the potential of silicon devices, a fine-tuning of material properties is needed. Here we focus on the optimization of the electrical parameters of copper oxide-based field-effect transistors by modification of precursor solvent (usually 2-methoxy ethanol). However, to achieve solubility and high-quality films, a better solvent is required. Since almost no solvents have both high dielectric constant and high boiling point, an alternative approach was proposed with blend solvents. By mixing isopropyl alcohol (IPA) and 2-methoxy ethanol (2ME) the precursor reached better solubility. The quality of the layers fabricated using mixed solutions was evaluated in accordance with the surface morphology and electrical properties. The IPA:2ME solution mixture reached optimum results for the weight ratio of 1:3. The cupric oxide layers for optimal mixture had the highest crystallinity and highest effective charge mobility.

Keywords: copper oxide, field-effect transistor, semiconductor, sol-gel method

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Authors: Leila Motamed-Jahromi, Mohsen Hatami, Alireza Keshavarz

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This research aims at obtaining the equations of pulse propagation in nonlinear plasmonic waveguides created with As₂S₃ chalcogenide materials. Via utilizing Helmholtz equation and first-order perturbation theory, two components of electric field are determined within frequency domain. Afterwards, the equations are formulated in time domain. The obtained equations include two coupled differential equations that considers nonlinear dispersion.

Keywords: nonlinear optics, plasmonic waveguide, chalcogenide, propagation equation

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Authors: F. Laatar, S. Ktifa, H. Ezzaouia

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Plasma Enhanced Chemical Vapor Deposition (PECVD) method is used to deposit hydrogenated nanocrystalline silicon films (nc-Si: H) on Porous Anodic Alumina Films (PAF) on glass substrate at different deposition duration. Influence of the deposition time on the physical properties of nc-Si: H grown on PAF was investigated through an extensive correlation between micro-structural and optical properties of these films. In this paper, we present an extensive study of the morphological, structural and optical properties of these films by Atomic Force Microscopy (AFM), X-Ray Diffraction (XRD) techniques and a UV-Vis-NIR spectrometer. It was found that the changes in DT can modify the films thickness, the surface roughness and eventually improve the optical properties of the composite. Optical properties (optical thicknesses, refractive indexes (n), absorption coefficients (α), extinction coefficients (k), and the values of the optical transitions EG) of this kind of samples were obtained using the data of the transmittance T and reflectance R spectra’s recorded by the UV–Vis–NIR spectrometer. We used Cauchy and Wemple–DiDomenico models for the analysis of the dispersion of the refractive index and the determination of the optical properties of these films.

Keywords: hydragenated nanocrystalline silicon, plasma processing chemical vapor deposition, X-ray diffraction, optical properties

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Authors: Md. Salim Kaiser

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In the present work, the effect of load and sliding distance on the performance tribology of commercially used aluminium-silicon engine block and piston was evaluated at ambient conditions with humidity of 80% under dry sliding conditions using a pin-on-disc with two different loads of 5N and 20N yielding applied pressure of 0.30MPa and 1.4MPa, respectively, at sliding velocity of 0.29ms-1 and with varying sliding distance ranging from 260m-4200m. Factors and conditions that had significant effect were identified. The results showed that the load and the sliding distance affect the wear rate of the alloys and the wear rate increased with increasing load for both the alloys. Wear rate also increases almost linearly at low loads and increase to a maximum then attain a plateau with increasing sliding distance. For both applied loads, the piston alloy showed the better performance due to higher Ni and Mg content. The worn surface and wear debris was characterized by optical microscope, SEM and EDX analyzer. The worn surface was characterized by surface with shallow grooves at loads while the groove width and depth increased as the loads increases. Oxidative wear was found to be the predominant mechanisms in the dry sliding of Al-Si alloys at low loads

Keywords: wear, friction, gravimetric analysis, aluminium-silicon alloys, SEM, EDX

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Authors: Jun-Geol Park, Kyoung-Il Do, Min-Ju Kwon, Kyung-Hyun Park, Yong-Seo Koo

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This paper analyzed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuits with the turn-on time characteristics. The structures are the LVTSCR (Low Voltage Triggered SCR), the ZTSCR (Zener Triggered SCR) and the PTSCR (P-Substrate Triggered SCR). The three structures are for the 5V power clamp. In general, the structures with the low trigger voltage structure can have the fast turn-on characteristics than other structures. All the ESD protection circuits have the low trigger voltage by using the N+ bridge region of LVTSCR, by using the zener diode structure of ZTSCR, by increasing the trigger current of PTSCR. The simulation for the comparison with the turn-on time was conducted by the Synopsys TCAD simulator. As the simulation results, the LVTSCR has the turn-on time of 2.8 ns, ZTSCR of 2.1 ns and the PTSCR of 2.4 ns. The HBM simulation results, however, show that the PTSCR is the more robust structure of 430K in HBM 8kV standard than 450K of LVTSCR and 495K of ZTSCR. Therefore the PTSCR is the most effective ESD protection circuit for the 5V power clamp.

Keywords: ESD, SCR, turn-on time, trigger voltage, power clamp

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Authors: Lakrim Abderrazak, Tahri Driss

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This paper presents a new behavioural electrothermal model of power Silicon Carbide (SiC) MOSFET under SPICE. This model is based on the MOS model level 1 of SPICE, in which phenomena such as Drain Leakage Current IDSS, On-State Resistance RDSon, gate Threshold voltage VGSth, the transconductance (gfs), I-V Characteristics Body diode, temperature-dependent and self-heating are included and represented using behavioural blocks ABM (Analog Behavioural Models) of Spice library. This ultimately makes this model flexible and easily can be integrated into the various Spice -based simulation softwares. The internal junction temperature of the component is calculated on the basis of the thermal model through the electric power dissipated inside and its thermal impedance in the form of the localized Foster canonical network. The model parameters are extracted from manufacturers' data (curves data sheets) using polynomial interpolation with the method of simulated annealing (S A) and weighted least squares (WLS). This model takes into account the various important phenomena within transistor. The effectiveness of the presented model has been verified by Spice simulation results and as well as by data measurement for SiC MOS transistor C2M0025120D CREE (1200V, 90A).

Keywords: SiC power MOSFET, DC electro-thermal model, ABM Spice library, SPICE modelling, behavioural model, C2M0025120D CREE.

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Authors: Nilgun Kuskonmaz, Zeynep Taslıcukur Ozturk, Cem Sahin

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In this study, Si3N4-SiC composites were synthesized by using different raw materials. In the first method, Si3N4 and C black powder mixtures were used to fabricate Si3N4-SiC composites by in-situ carbothermal reduction process. The percentage of C black was only changed. The effects of carbon black percentage in the mixtures were analysed by characterization of SiC particles which were obtained in the Si3N4 matrix. In the second method, SiC particles were added to the matrix in different weight ratios. The composites were pressed by cold isostatic method under 150 MPa pressure and pressureless sintered at 1700-1850 °C during 1 hour in the argon atmosphere. AlN and Y2O3 were used as sintering additives. Sintering temperature, time and all the effects on in-situ reaction were studied. The densification and microstructure properties of the produced ceramics were analysed. Density was one of the main subjects in these reactions. It is very important during porous SiC sintering. Green density and relative density were measured higher for CIP samples. Samples which were added carbon black were more porous than SiC added samples. The increase in the carbon black, makes increase in porosity. The outcome of the experiments was SiC powders which were obtained at the grain boundries of β-Si3N4 particles.

Keywords: silicon nitride, silicon carbide, carbon black, cold isostatic press, sintering

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Authors: My Ali El Khakani

Abstract:

Single-wall Carbon nanotubes (SWCNTs) possess an unprecedented combination of unique properties that make them highly promising for suitable for a new generation of photovoltaic (PV) devices. Prior to discussing the integration of SWCNTs films into effective PV devices, we will briefly highlight our work on the synthesis of SWCNTs by means of the KrF pulsed laser deposition technique, their purification and transfer onto n-silicon substrates to form p-n junctions. Some of the structural and optoelectronic properties of SWCNTs relevant to PV applications will be emphasized. By varying the SWCNTs film density (µg/cm2), we were able to point out the existence of an optimum value that yields the highest photoconversion efficiency (PCE) of ~10%. Further control of the doping of the p-SWCNTs films, through their exposure to nitric acid vapors, along with the insertion of an optimized hole-extraction-layer in the p-SWCNTs/n-Si hybrid devices permitted to achieve a PCE value as high as 14.2%. Such a high PCE value demonstrates the full potential of these p-SWCNTs/n-Si devices for sunlight photoconversion. On the other hand, by examining both the optical transmission and electrical conductance of the SWCNTs’ films, we established a figure of merit (FOM) that was shown to correlate well with the PCE performance. Such a direct relationship between the FOM and the PCE can be used as a guide for further PCE enhancement of these novel p-SWCNTs/n-Si PV devices.

Keywords: carbon nanotubes (CNTs), CNTs-silicon hybrid devices, photoconversion, photovoltaic devices, pulsed laser deposition

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Authors: K. Y. Lin, W. H. Lee, T. W. Cheng, S. W. Huang

Abstract:

Basic Oxygen Furnace (BOF) Slag is a by-product of iron making. It has great engineering properties, such as, high hardness and density, high compressive strength, low abrasion ratio, and can replace natural aggregate for building materials. However, the main problem for BOF slag is expansion, due to it contains free lime or free magnesium. The purpose of this study was to stabilize the BOF slag by using geopolymeric technology, hoping can prevent BOF slag expansion. Geopolymer processes contain a large amount of free silicon. These free silicon can react with free-lime or free magnesium oxide in BOF slag, and thus to form stable compound, therefore inhibit the expansion of the BOF slag. In this study for the successful preparation of geopolymer mortar with BOF slag, and their main properties are analyzed with regard to their use as building materials. Autoclave is used to study the volume stability of these geopolymer mortar. Finally, the compressive strength of geopolymer mortar with BOF slag can be reached 33MPa in 28 days. After autoclave testing, the volume expansion does not exceed 0.2%. Even after the autoclave test, the compressive strength can increase to 35MPa. According to the research results can be proved that using geopolymer technology for stabilizing BOF slag is very effective.

Keywords: BOF slag, autoclave test, geopolymer, swell behavior

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Authors: Su Yin Chiam, Zhipeng Ding, Guang Yang, Danny Jian Hang Tng, Peiyi Song, Geok Ing Ng, Ken-Tye Yong, Qing Xin Zhang

Abstract:

Brain-machine interfaces (BMI) is a ground rich of exploration opportunities where manipulation of neural activity are used for interconnect with myriad form of external devices. These research and intensive development were evolved into various areas from medical field, gaming and entertainment industry till safety and security field. The technology were extended for neurological disorders therapy such as obsessive compulsive disorder and Parkinson’s disease by introducing current pulses to specific region of the brain. Nonetheless, the work to develop a real-time observing, recording and altering of neural signal brain-machine interfaces system will require a significant amount of effort to overcome the obstacles in improving this system without delay in response. To date, feature size of interface devices and the density of the electrode population remain as a limitation in achieving seamless performance on BMI. Currently, the size of the BMI devices is ranging from 10 to 100 microns in terms of electrodes’ diameters. Henceforth, to accommodate the single cell level precise monitoring, smaller and denser Nano-scaled nanowire electrode arrays are vital in fabrication. In this paper, we would like to showcase the fabrication of high aspect ratio of vertical silicon nanowire electrodes arrays using microelectromechanical system (MEMS) method. Nanofabrication of the nanowire electrodes involves in deep reactive ion etching, thermal oxide thinning, electron-beam lithography patterning, sputtering of metal targets and bottom anti-reflection coating (BARC) etch. Metallization on the nanowire electrode tip is a prominent process to optimize the nanowire electrical conductivity and this step remains a challenge during fabrication. Metal electrodes were lithographically defined and yet these metal contacts outline a size scale that is larger than nanometer-scale building blocks hence further limiting potential advantages. Therefore, we present an integrated contact solution that overcomes this size constraint through self-aligned Nickel silicidation process on the tip of vertical silicon nanowire electrodes. A 4 x 4 array of vertical silicon nanowires electrodes with the diameter of 290nm and height of 3µm has been successfully fabricated.

Keywords: brain-machine interfaces, microelectromechanical systems (MEMS), nanowire, nickel silicide

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Authors: Sue-Yi Chen, Wei-Chun Hsu, Jon-Yiew Gan

Abstract:

Si-based double-junction tandem solar cells have become a popular research topic because of the advantages of low manufacturing cost and high energy conversion efficiency. However, there is no set of calculations to select the appropriate top cell materials. Therefore, this paper will propose a simple but practical selection method. First of all, we calculate the S-Q limit and explain the reasons for developing tandem solar cells. Secondly, we calculate the theoretical energy conversion efficiency of the double-junction tandem solar cells while combining the commercial monocrystalline Si and materials' practical efficiency to consider the actual situation. Finally, we conservatively conclude that if considering 75% performance of the theoretical energy conversion efficiency of the top cell, the suitable bandgap energy range will fall between 1.38eV to 2.5eV. Besides, we also briefly describe some improvements of several proper materials, CZTS, CdSe, Cu2O, ZnTe, and CdS, hoping that future research can select and manufacture high-efficiency Si-based tandem solar cells based on this paper successfully. Most importantly, our calculation method is not limited to silicon solely. If other materials’ performances match or surpass silicon's ability in the future, researchers can also apply this set of deduction processes.

Keywords: high-efficiency solar cells, material selection, Si-based double-junction solar cells, Tandem solar cells, photovoltaics.

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Authors: Touati Mawloud

Abstract:

Between electronics and electrical systems has developed a new technology that is power electronics, also called electronic of strong currents, this application covers a very wide range of use particularly in the industrial sector, where direct current engines are frequently used, they control their speed by the use of the converters (DC-DC), which aims to deal with various mechanical disturbances (fillers) or electrical (power). In future, it will play a critical role in transforming the current electric grid into the next generation grid. Existing silicon-based PE devices enable electric grid functionalities such as fault-current limiting and converter devices. Systems of future are envisioned to be highly automated, interactive "smart" grid that can self-adjust to meet the demand for electricity reliability, securely, and economically. Transforming today’s electric grid to the grid of the future will require creating or advancing a number of technologies, tools, and techniques—specifically, the capabilities of power electronics (PE). PE devices provide an interface between electrical system, and electronics system by converting AC to direct current (DC) and vice versa. Solid-state wide Bandgap (WBG), semiconductor electronics (such as silicon carbide [SiC], gallium nitride [GaN], and diamond) are envisioned to improve the reliability and efficiency of the next-generation grid substantially.

Keywords: Power Electronics (PE), electrical system generation electric grid, switching frequencies, converter devices

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Authors: U. Achutha Kini, S. S. Sharma, K. Jagannath, P. R. Prabhu, M. C. Gowri Shankar

Abstract:

Aluminium matrix composites with alumina reinforcements give superior mechanical & physical properties. Their applications in several fields like automobile, aerospace, defense, sports, electronics, bio-medical and other industrial purposes are becoming essential for the last several decades. In the present work, fabrication of hybrid composite was done by Stir casting technique using Al 6061 as a matrix with alumina and silicon carbide (SiC) as reinforcement materials. The weight percentage of alumina is varied from 2 to 4% and the silicon carbide weight percentage is maintained constant at 2%. Hardness and wear tests are performed in the as cast and heat treated conditions. Age hardening treatment was performed on the specimen with solutionizing at 550°C, aging at two temperatures (150 and 200°C) for different time durations. Hardness distribution curves are drawn and peak hardness values are recorded. Hardness increase was very sensitive with respect to the decrease in aging temperature. There was an improvement in wear resistance of the peak aged material when aged at lower temperature. Also increase in weight percent of alumina, increases wear resistance at lower temperature but opposite behavior was seen when aged at higher temperature.

Keywords: hybrid composite, hardness test, wear test, heat treatment, pin on disc wear testing machine

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Authors: Christian Röling, Elena Y. Poimanova, Vladimir V. Bruevich

Abstract:

Here we demonstrate a non-destructive optical technique to localize and characterize single crystals of semiconductive organic materials – Spectroscopic Imaging Ellipsometry. With a combination of microscopy and ellipsometry, it is possible to characterize even micro-sized thin film crystals on plane surface regarding anisotropy, optical properties, crystalline domains and thickness. The semiconducting thiophene-phenylene co-oligomer 1,4-bis(5'-hexyl-[2,2'-bithiophen]-5-yl)benzene (dHex-TTPTT) crystals were grown by solvent based self-assembly technique on silicon substrate with 300 nm thermally silicon dioxide. The ellipsometric measurements were performed with an Ep4-SE (Accurion). In an ellipsometric high-contrast image of the complete sample, we have localized high-quality single crystals. After demonstrating the uniaxial anisotropy of the crystal by using Müller-Matrix imaging ellipsometry, we determined the optical axes by rotating the sample and performed spectroscopic measurements (λ = 400-700 nm) in 5 nm intervals. The optical properties were described by using a Lorentz term in the Ep4-Model. After determining the dispersion of the crystals, we converted a recorded Delta and Psi-map into a 2D thickness image. Based on a quantitative analysis of the resulting thickness map, we have calculated the height of a molecular layer (3.49 nm).

Keywords: anisotropy, ellipsometry, SCFET, thin film

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Authors: Min Yu, Olivier T. Picot, Theo Graves Saunders, Ivo Dlouhy, Amit Mahajan, Michael J. Reece

Abstract:

Graphene was successfully introduced into a polymer-derived silicon oxycarbide (SiOC) matrix by phase transfer of graphene oxide (GO) from an aqueous (GO dispersed in water) to an organic phase (copolymer as SiOC precursor in diethyl ether). With GO concentrations increasing up to 2 vol%, graphene-containing flakes self-assembled into a lamellar structure in the matrix leading to composite with the anisotropic property. Spark plasma sintering (SPS) was applied to densify the composites with four different GO concentrations (0, 0.5, 1 and 2 vol%) up to ~2.3 g/cm3. The fracture toughness of SiOC-2 vol% GO composites was significantly increased by ~91% (from 0.70 to 1.34 MPa·m¹/²), at the expense of a decrease in the flexural strength (from 85MPa to 55MPa), compared to SiOC-0 vol% GO composites. Moreover, the electrical conductivity in the perpendicular direction (σ┴=3×10⁻¹ S/cm) in SiOC-2 vol% GO composite was two orders of magnitude higher than the parallel direction (σ║=4.7×10⁻³ S/cm) owing to the self-assembled lamellar structure of graphene in the SiOC matrix. The composites exhibited increased electrical conductivity (σ┴) from 8.4×10⁻³ to 3×10⁻¹ S/cm, with the increasing GO content from 0.5 to 2 vol%. The SiOC-2 vol% GO composites further showed the better electrochemical performance of oxygen reduction reaction (ORR) than pure graphene, exhibiting a similar onset potential (~0.75V vs. RHE) and more positive half-wave potential (~0.6V vs. RHE).

Keywords: composite, fracture toughness, flexural strength, electrical conductivity, electrochemical performance

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