Search results for: silicon controlled rectifier (SCR)
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2867

Search results for: silicon controlled rectifier (SCR)

2777 Effect of Silicon in Mitigating Cadmium Toxicity in Maize

Authors: Ghulam Hasan Abbasi, Moazzam Jamil, M. Anwar-Ul-Haq

Abstract:

Heavy metals are significant pollutants in environment and their toxicity is a problem for survival of living things while Silicon (Si) is one of the most ubiquitous macroelements, performing an essential function in healing plants in response to environmental stresses. A hydroponic experiment was conducted to investigate the role of exogenous application of silicon under cadmium stress in six different maize hybrids with five treatments comprising of control, 7.5 µM Cd + 5 mM Si, 7.5 µM Cd + 10 mM Si, 15 µM Cd + 5 mM Si and 15 µM Cd + 10 mM Si. Results revealed that treatments of plants with 10mM Si application under both 7.5µM Cd and 15 µM Cd stress resulted in maximum improvement in plant morphological attributes (root and shoot length, root and shoot fresh and dry weight, leaf area and relative water contents) and antioxidant enzymes (POD and CAT) relative to 5 mM Si application in all maize hybrids. Results regarding Cd concentrations showed that Cd was more retained in roots followed by shoots and then leaves and maximum reduction in Cd uptake was observed at 10mM Si application. Maize hybrid 6525 showed maximum growth and least concentration of Cd whereas maize hybrid 1543 showed the minimum growth and maximum Cd concentration among all maize hybrids.

Keywords: antioxidant, cadmium, maize, silicon

Procedia PDF Downloads 475
2776 Proposal of a Rectenna Built by Using Paper as a Dielectric Substrate for Electromagnetic Energy Harvesting

Authors: Ursula D. C. Resende, Yan G. Santos, Lucas M. de O. Andrade

Abstract:

The recent and fast development of the internet, wireless, telecommunication technologies and low-power electronic devices has led to an expressive amount of electromagnetic energy available in the environment and the smart applications technology expansion. These applications have been used in the Internet of Things devices, 4G and 5G solutions. The main feature of this technology is the use of the wireless sensor. Although these sensors are low-power loads, their use imposes huge challenges in terms of an efficient and reliable way for power supply in order to avoid the traditional battery. The radio frequency based energy harvesting technology is especially suitable to wireless power sensors by using a rectenna since it can be completely integrated into the distributed hosting sensors structure, reducing its cost, maintenance and environmental impact. The rectenna is an equipment composed of an antenna and a rectifier circuit. The antenna function is to collect as much radio frequency radiation as possible and transfer it to the rectifier, which is a nonlinear circuit, that converts the very low input radio frequency energy into direct current voltage. In this work, a set of rectennas, mounted on a paper substrate, which can be used for the inner coating of buildings and simultaneously harvest electromagnetic energy from the environment, is proposed. Each proposed individual rectenna is composed of a 2.45 GHz patch antenna and a voltage doubler rectifier circuit, built in the same paper substrate. The antenna contains a rectangular radiator element and a microstrip transmission line that was projected and optimized by using the Computer Simulation Software (CST) in order to obtain values of S11 parameter below -10 dB in 2.45 GHz. In order to increase the amount of harvested power, eight individual rectennas, incorporating metamaterial cells, were connected in parallel forming a system, denominated Electromagnetic Wall (EW). In order to evaluate the EW performance, it was positioned at a variable distance from the internet router, and a 27 kΩ resistive load was fed. The results obtained showed that if more than one rectenna is associated in parallel, enough power level can be achieved in order to feed very low consumption sensors. The 0.12 m2 EW proposed in this work was able to harvest 0.6 mW from the environment. It also observed that the use of metamaterial structures provide an expressive growth in the amount of electromagnetic energy harvested, which was increased from 0. 2mW to 0.6 mW.

Keywords: electromagnetic energy harvesting, metamaterial, rectenna, rectifier circuit

Procedia PDF Downloads 116
2775 To Study the Effect of Optic Fibre Laser Cladding of Cast Iron with Silicon Carbide on Wear Rate

Authors: Kshitij Sawke, Pradnyavant Kamble, Shrikant Patil

Abstract:

The study investigates the effect on wear rate of laser clad of cast iron with silicon carbide. Metal components fail their desired use because they wear, which causes them to lose their functionality. The laser has been used as a heating source to create a melt pool over the surface of cast iron, and then a layer of hard silicon carbide is deposited. Various combinations of power and feed rate of laser have experimented. A suitable range of laser processing parameters was identified. Wear resistance and wear rate properties were evaluated and the result showed that the wear resistance of the laser treated samples was exceptional to that of the untreated samples.

Keywords: laser clad, processing parameters, wear rate, wear resistance

Procedia PDF Downloads 215
2774 Lanthanum Fluoride with Embedded Silicon Nanocrystals: A Novel Material for Future Electronic Devices

Authors: Golam Saklayen, Sheikh Rashel al Ahmed, Ferdous Rahman, Ismail Abu Bakar

Abstract:

Investigation on Lanthanum Fluoride LaF3 layer embedding Silicon Nanocrystals (Si-NCs) fabricated using a novel one-step chemical method has been reported in this presentation. Application of this material has been tested for low-voltage operating non-volatile memory and Schottkey-junction solar cell. Colloidal solution of Si-NCs in hydrofluoric acid (HF) was prepared from meso-porous silicon by ultrasonic vibration (sonication). This solution prevents the Si-NCs to be oxidized. On a silicon (Si) substrate, LaCl3 solution in HCl is allowed to react with the colloidal solution of prepared Si-NCs. Since this solution contains HF, LaCl3 reacts with HF and produces LaF3 crystals that deposits on the silicon substrate as a layer embedding Si-NCs. This a novel single step chemical way of depositing LaF3 insulating layer embedding Si-NCs. The X-Ray diffraction of the deposited layer shows a polycrystalline LaF3 deposition on silicon. A non-stoichiometric LaF3 layer embedding Si-NCs was found by EDX analysis. The presence of Si-NCs was confirmed by SEM. FTIR spectroscopy of the deposited LaF3 powder also confirmed the presence of Si-NCs. The size of Si-NCs was found to be inversely proportional to the ultrasonic power. After depositing proper contacts on the back of Si and LaF3, the devices have been tested as a non-volatile memory and solar cell. A memory window of 525 mV was obtained at a programming and erasing bias of 2V. The LaF3 films with Si NCs showed strong absorption and was also found to decrease optical transmittance than pure LaF3 film of same thickness. The I-V characteristics of the films showed a dependency on the incident light intensity where current changed under various light illumination. Experimental results show a lot of promise for Si-NCs-embedded LaF3 layer to be used as an insulating layer in MIS devices as well as an photoactive material in Schottkey junction solar cells.

Keywords: silicon nanocrystals (Si NCs), LaF3, colloidal solution, Schottky junction solar cell

Procedia PDF Downloads 353
2773 Softener Washes Affecting the Shrinkage and Appearance of Knitted Garments

Authors: Ezza Nasir, Babar Ramzan

Abstract:

Silicon washes on altered knitted fabrics will provide diverse shrinkage trends. The expectation on shrinkage for various apparel products are also changed. However, the effect of shrinkage in garment is still ambiguous. As a result, analysis of shrinkage after different concentrations of silicon washes can provide a more realistic study. The purpose of this study is to analyze the shrinkage with commercial sewing threads in knitted fabric. Study focuses on the effect of different washes on garment measurement and to study the effect of washes on fabric shrinkage. Four different types of knitted fabric were sewn with same length and width measurements. To study the effect of softener washes on shrinkage of garment through subjective ranking, there were critical dimensions for measurements done on body length and width garment appearance and shrinkage.

Keywords: shrinkage, dimensions, knitted fabric, silicon

Procedia PDF Downloads 439
2772 Modeling and Design of Rectenna for Low Power Medical Implants

Authors: Madhav Pant, Khem N. Poudel

Abstract:

Wireless power transfer is continuously becoming more powerful and compact in medical implantable devices and the wide range of applications. A rectenna is designed for wireless power transfer technique that can be applied to medical implant devices. The experiment is performed using ANSYS HFSS, a full wave electromagnetic simulation. The dipole antenna combinations operating at 2.4 GHz are used for wireless power transfer and the maximum DC voltage reception by the implant considering International Commission on Non-Ionizing Radiation Protection (ICNIRP) regulation. The power receiving dipole antenna is placed inside the cylindrical geometry having the similar properties of the human body at the frequency of 2.4 GHz. Our design can provide the power at the depth of 5 mm skin and 5mm of bone for the implant. The voltage doubler/quadrupler rectifier in ANSYS Simplorer is used to calculate the exact DC current utilized by implant inside the human body. The qualitative design and analysis of this wireless power transfer method could also be used for other biomedical implants systems such as cardiac pacemaker, insulin pump, and retinal implants.

Keywords: dipole antenna, medical implants, wireless power transfer, rectifier

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2771 Generalized Mathematical Description and Simulation of Grid-Tied Thyristor Converters

Authors: V. S. Klimash, Ye Min Thu

Abstract:

Thyristor rectifiers, inverters grid-tied, and AC voltage regulators are widely used in industry, and on electrified transport, they have a lot in common both in the power circuit and in the control system. They have a common mathematical structure and switching processes. At the same time, the rectifier, but the inverter units and thyristor regulators of alternating voltage are considered separately both theoretically and practically. They are written about in different books as completely different devices. The aim of this work is to combine them into one class based on the unity of the equations describing electromagnetic processes, and then, to show this unity on the mathematical model and experimental setup. Based on research from mathematics to the product, a conclusion is made about the methodology for the rapid conduct of research and experimental design work, preparation for production and serial production of converters with a unified bundle. In recent years, there has been a transition from thyristor circuits and transistor in modular design. Showing the example of thyristor rectifiers and AC voltage regulators, we can conclude that there is a unity of mathematical structures and grid-tied thyristor converters.

Keywords: direct current, alternating current, rectifier, AC voltage regulator, generalized mathematical model

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2770 Modeling and Characterization of the SiC Single Crystal Growth Process

Authors: T. Wejrzanowski, M. Grybczuk, E. Tymicki, K. J. Kurzydlowski

Abstract:

In the present study numerical simulations silicon carbide single crystal growth process in Physical Vapor Transport reactor are addressed. Silicon Carbide is a perspective material for many applications in modern electronics. One of the main challenges for wider applications of SiC is high price of high quality mono crystals. Improvement of silicon carbide manufacturing process has a significant influence on the product price. Better understanding of crystal growth allows for optimization of the process, and it can be achieved by numerical simulations. In this work Virtual Reactor software was used to simulate the process. Predicted geometrical properties of the final product and information about phenomena occurring inside process reactor were obtained. The latter is especially valuable because reactor chamber is inaccessible during the process due to high temperature inside the reactor (over 2000˚C). Obtained data was used for improvement of the process and reactor geometry. Resultant crystal quality was also predicted basing on crystallization front shape evolution and threading dislocation paths. Obtained results were confronted with experimental data and the results are in good agreement.

Keywords: Finite Volume Method, semiconductors, Physical Vapor Transport, silicon carbide

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2769 Studying the Effect of Silicon Substrate Intrinsic Carrier Concentration on Performance of ZnO/Si Solar Cells

Authors: Syed Sadique Anwer Askari, Mukul Kumar Das

Abstract:

Zinc Oxide (ZnO) solar cells have drawn great attention due to the enhanced efficiency and low-cost fabrication process. In this study, ZnO thin film is used as the active layer, hole blocking layer, antireflection coating (ARC) as well as transparent conductive oxide. To improve the conductivity of ZnO, top layer of ZnO is doped with aluminum, for top contact. Intrinsic carrier concentration of silicon substrate plays an important role in enhancing the power conversion efficiency (PCE) of ZnO/Si solar cell. With the increase of intrinsic carrier concentration PCE decreased due to increase in dark current in solar cell. At 80nm ZnO and 160µm Silicon substrate thickness, power conversion efficiency of 26.45% and 21.64% is achieved with intrinsic carrier concentration of 1x109/cm3, 1.4x1010/cm3 respectively.

Keywords: hetero-junction solar cell, solar cell, substrate intrinsic carrier concentration, ZnO/Si

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2768 Influence of Silicon Carbide Particle Size and Thermo-Mechanical Processing on Dimensional Stability of Al 2124SiC Nanocomposite

Authors: Mohamed M. Emara, Heba Ashraf

Abstract:

This study is to investigation the effect of silicon carbide (SiC) particle size and thermo-mechanical processing on dimensional stability of aluminum alloy 2124. Three combinations of SiC weight fractions are investigated, 2.5, 5, and 10 wt. % with different SiC particle sizes (25 μm, 5 μm, and 100nm) were produced using mechanical ball mill. The standard testing samples were fabricated using powder metallurgy technique. Both samples, prior and after extrusion, were heated from room temperature up to 400ºC in a dilatometer at different heating rates, that is, 10, 20, and 40ºC/min. The analysis showed that for all materials, there was an increase in length change as temperature increased and the temperature sensitivity of aluminum alloy decreased in the presence of both micro and nano-sized silicon carbide. For all conditions, nanocomposites showed better dimensional stability compared to conventional Al 2124/SiC composites. The after extrusion samples showed better thermal stability and less temperature sensitivity for the aluminum alloy for both micro and nano-sized silicon carbide.

Keywords: aluminum 2124 metal matrix composite, SiC nano-sized reinforcements, powder metallurgy, extrusion mechanical ball mill, dimensional stability

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2767 Optimizing the Field Emission Performance of SiNWs-Based Heterostructures: Controllable Synthesis, Core-Shell Structure, 3D ZnO/Si Nanotrees and Graphene/SiNWs

Authors: Shasha Lv, Zhengcao Li

Abstract:

Due to the CMOS compatibility, silicon-based field emission (FE) devices as potential electron sources have attracted much attention. The geometrical arrangement and dimensional features of aligned silicon nanowires (SiNWs) have a determining influence on the FE properties. We discuss a multistep template replication process of Ag-assisted chemical etching combined with polystyrene (PS) spheres to fabricate highly periodic and well-aligned silicon nanowires, then their diameter, aspect ratio and density were further controlled via dry oxidation and post chemical treatment. The FE properties related to proximity and aspect ratio were systematically studied. A remarkable improvement of FE propertiy was observed with the average nanowires tip interspace increasing from 80 to 820 nm. On the basis of adjusting SiNWs dimensions and morphology, addition of a secondary material whose properties complement the SiNWs could yield a combined characteristic. Three different nanoheterostructures were fabricated to control the FE performance, they are: NiSi/Si core-shell structures, ZnO/Si nanotrees, and Graphene/SiNWs. We successfully fabricated the high-quality NiSi/Si heterostructured nanowires with excellent conformality. First, nickle nanoparticles were deposited onto SiNWs, then rapid thermal annealing process were utilized to form NiSi shell. In addition, we demonstrate a new and simple method for creating 3D nanotree-like ZnO/Si nanocomposites with a spatially branched hierarchical structure. Compared with the as-prepared SiNRs and ZnO NWs, the high-density ZnO NWs on SiNRs have exhibited predominant FE characteristics, and the FE enhancement factors were attributed to band bending effect and geometrical morphology. The FE efficiency from flat sheet structure of graphene is low. We discussed an effective approach towards full control over the diameter of uniform SiNWs to adjust the protrusions of large-scale graphene sheet deposited on SiNWs. The FE performance regarding the uniformity and dimensional control of graphene protrusions supported on SiNWs was systematically clarified. Therefore, the hybrid SiNWs/graphene structures with protrusions provide a promising class of field emission cathodes.

Keywords: field emission, silicon nanowires, heterostructures, controllable synthesis

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2766 A Machining Method of Cross-Shape Nano Channel and Experiments for Silicon Substrate

Authors: Zone-Ching Lin, Hao-Yuan Jheng, Zih-Wun Jhang

Abstract:

The paper innovatively proposes using the concept of specific down force energy (SDFE) and AFM machine to establish a machining method of cross-shape nanochannel on single-crystal silicon substrate. As for machining a cross-shape nanochannel by AFM machine, the paper develop a method of machining cross-shape nanochannel groove at a fixed down force by using SDFE theory and combining the planned cutting path of cross-shape nanochannel up to 5th machining layer it finally achieves a cross-shape nanochannel at a cutting depth of around 20nm. Since there may be standing burr at the machined cross-shape nanochannel edge, the paper uses a smaller down force to cut the edge of the cross-shape nanochannel in order to lower the height of standing burr and converge the height of standing burr at the edge to below 0.54nm as set by the paper. Finally, the paper conducts experiments of machining cross-shape nanochannel groove on single-crystal silicon by AFM probe, and compares the simulation and experimental results. It is proved that this proposed machining method of cross-shape nanochannel is feasible.

Keywords: atomic force microscopy (AFM), cross-shape nanochannel, silicon substrate, specific down force energy (SDFE)

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2765 Mathematical Modeling of Switching Processes in Magnetically Controlled MEMS Switches

Authors: Sergey M. Karabanov, Dmitry V. Suvorov, Dmitry Yu. Tarabrin

Abstract:

The operating principle of magnetically controlled microelectromechanical system (MEMS) switches is based on controlling the beam movement under the influence of a magnetic field. Currently, there is a MEMS switch design with a flexible ferromagnetic electrode in the form of a fixed-terminal beam, with an electrode fastened on a straight or cranked anchor. The basic performance characteristics of magnetically controlled MEMS switches (service life, sensitivity, contact resistance, fast response) are largely determined by the flexible electrode design. To ensure the stable and controlled motion of the flexible electrode, it is necessary to provide the optimal design of a flexible electrode.

Keywords: flexible electrode, magnetically controlled MEMS, mathematical modeling, mechanical stress

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2764 Single Pole-To-Earth Fault Detection and Location on the Tehran Railway System Using ICA and PSO Trained Neural Network

Authors: Masoud Safarishaal

Abstract:

Detecting the location of pole-to-earth faults is essential for the safe operation of the electrical system of the railroad. This paper aims to use a combination of evolutionary algorithms and neural networks to increase the accuracy of single pole-to-earth fault detection and location on the Tehran railroad power supply system. As a result, the Imperialist Competitive Algorithm (ICA) and Particle Swarm Optimization (PSO) are used to train the neural network to improve the accuracy and convergence of the learning process. Due to the system's nonlinearity, fault detection is an ideal application for the proposed method, where the 600 Hz harmonic ripple method is used in this paper for fault detection. The substations were simulated by considering various situations in feeding the circuit, the transformer, and typical Tehran metro parameters that have developed the silicon rectifier. Required data for the network learning process has been gathered from simulation results. The 600Hz component value will change with the change of the location of a single pole to the earth's fault. Therefore, 600Hz components are used as inputs of the neural network when fault location is the output of the network system. The simulation results show that the proposed methods can accurately predict the fault location.

Keywords: single pole-to-pole fault, Tehran railway, ICA, PSO, artificial neural network

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2763 Atomic Layer Deposition of Metal Oxides on Si/C Materials for the Improved Cycling Stability of High-Capacity Lithium-Ion Batteries

Authors: Philipp Stehle, Dragoljub Vrankovic, Montaha Anjass

Abstract:

Due to its high availability and extremely high specific capacity, silicon (Si) is the most promising anode material for next generation lithium-ion batteries (LIBs). However, Si anodes are suffering from high volume changes during cycling causing unstable solid-electrolyte interface (SEI). One approach for mitigation of these effects is to embed Si particles into a carbon matrix to create silicon/carbon composites (Si/C). These typically show more stable electrochemical performance than bare silicon materials. Nevertheless, the same failure mechanisms mentioned earlier appear in a less pronounced form. In this work, we further improved the cycling performance of two commercially available Si/C materials by coating thin metal oxide films of different thicknesses on the powders via Atomic Layer Deposition (ALD). The coated powders were analyzed via ICP-OES and AFM measurements. Si/C-graphite anodes with automotive-relevant loadings (~3.5 mAh/cm2) were processed out of the materials and tested in half coin cells (HCCs) and full pouch cells (FPCs). During long-term cycling in FPCs, a significant improvement was observed for some of the ALD-coated materials. After 500 cycles, the capacity retention was already up to 10% higher compared to the pristine materials. Cycling of the FPCs continued until they reached a state of health (SOH) of 80%. By this point, up to the triple number of cycles were achieved by ALD-coated compared to pristine anodes. Post-mortem analysis via various methods was carried out to evaluate the differences in SEI formation and thicknesses.

Keywords: silicon anodes, li-ion batteries, atomic layer deposition, silicon-carbon composites, surface coatings

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2762 The Effect of Surface Modifiers on the Mechanical and Morphological Properties of Waste Silicon Carbide Filled High-Density Polyethylene

Authors: R. Dangtungee, A. Rattanapan, S. Siengchin

Abstract:

Waste silicon carbide (waste SiC) filled high-density polyethylene (HDPE) with and without surface modifiers were studied. Two types of surface modifiers namely; high-density polyethylene-grafted-maleic anhydride (HDPE-g-MA) and 3-aminopropyltriethoxysilane have been used in this study. The composites were produced using a two roll mill, extruder and shaped in a hydraulic compression molding machine. The mechanical properties of polymer composites such as flexural strength and modulus, impact strength, tensile strength, stiffness and hardness were investigated over a range of compositions. It was found that, flexural strength and modulus, tensile modulus and hardness increased, whereas impact strength and tensile strength decreased with the increasing in filler contents, compared to the neat HDPE. At similar filler content, the effect of both surface modifiers increased flexural modulus, impact strength, tensile strength and stiffness but reduced the flexural strength. Morphological investigation using SEM revealed that the improvement in mechanical properties was due to enhancement of the interfacial adhesion between waste SiC and HDPE.

Keywords: high-density polyethylene, HDPE-g-MA, mechanical properties, morphological properties, silicon carbide, waste silicon carbide

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2761 Preparation of Silicon-Based Oxide Hollow Nanofibers Using Single-Nozzle Electrospinning

Authors: Juiwen Liang, Choliang Chung

Abstract:

In this study, the silicon-base oxide nanofibers with hollow structure were prepared using single-nozzle electrospinning and heat treatment. Firstly, precursor solution was prepared: the Polyvinylpyrrolidone (PVP) and Tetraethyl orthosilicate (TEOS) dissolved in ethanol and to make sure the concentration of solution in appropriate using single-nozzle electrospinning to produce the nanofibers. Secondly, control morphology of the electrostatic spinning nanofibers was conducted, and design the temperature profile to created hollow nanofibers, exploring the morphology and properties of nanofibers. The characterized of nanofibers, following instruments were used: Atomic force microscopy (AFM), Field Emission Scanning Electron Microscope (FE-SEM), Transmission electron microscopy (TEM), Photoluminescence (PL), X-ray Diffraction (XRD). The AFM was used to scan the nanofibers, and 3D Graphics were applied to explore the surface morphology of fibers. FE-SEM and TEM were used to explore the morphology and diameter of nanofibers and hollow nanofiber. The excitation and emission spectra explored by PL. Finally, XRD was used for identified crystallization of ceramic nanofibers. Using electrospinning technique followed by subsequent heat treatment, we have successfully prepared silicon-base oxide nanofibers with hollow structure. Thus, the microstructure and morphology of electrostatic spinning silicon-base oxide hollow nanofibers were explored. Major characteristics of the nanofiber in terms of crystalline, optical properties and crystal structure were identified.

Keywords: electrospinning, single-nozzle, hollow, nanofibers

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2760 Effect of Elevation and Wind Direction on Silicon Solar Panel Efficiency

Authors: Abdulrahman M. Homadi

Abstract:

As a great source of renewable energy, solar energy is considered to be one of the most important in the world, since it will be one of solutions cover the energy shortage in the future. Photovoltaic (PV) is the most popular and widely used among solar energy technologies. However, PV efficiency is fairly low and remains somewhat expensive. High temperature has a negative effect on PV efficiency and cooling system for these panels is vital, especially in warm weather conditions. This paper presents the results of a simulation study carried out on silicon solar cells to assess the effects of elevation on enhancing the efficiency of solar panels. The study included four different terrains. The study also took into account the direction of the wind hitting the solar panels. To ensure the simulation mimics reality, six silicon solar panels are designed in two columns and three rows, facing to the south at an angle of 30 o. The elevations are assumed to change from 10 meters to 200 meters. The results show that maximum increase in efficiency occurs when the wind comes from the north, hitting the back of the panels.

Keywords: solar panels, elevation, wind direction, efficiency

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2759 Numerical Design and Characterization of SiC Single Crystals Obtained with PVT Method

Authors: T. Wejrzanowski, M. Grybczuk, E. Tymicki, K. J. Kurzydlowski

Abstract:

In the present study, numerical simulations of heat and mass transfer in Physical Vapor Transport reactor during silicon carbide single crystal growth are addressed. Silicon carbide is a wide bandgap material with unique properties making it highly applicable for high power electronics applications. Because of high manufacturing costs improvements of SiC production process are required. In this study, numerical simulations were used as a tool of process optimization. Computer modeling allows for cost and time effective analysis of processes occurring during SiC single crystal growth and provides essential information needed for improvement of the process. Quantitative relationship between process conditions, such as temperature or pressure, and crystal growth rate and shape of crystallization front have been studied and verified using experimental data. Basing on modeling results, several process improvements were proposed and implemented.

Keywords: Finite Volume Method, semiconductors, Physica Vapor Transport, silicon carbide

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2758 Enhancing the Luminescence of Alkyl-Capped Silicon Quantum Dots by Using Metal Nanoparticles

Authors: Khamael M. Abualnaja, Lidija Šiller, Ben R. Horrocks

Abstract:

Metal enhanced luminescence of alkyl-capped silicon quantum dots (C11-SiQDs) was obtained by mixing C11-SiQDs with silver nanoparticles (AgNPs). C11-SiQDs have been synthesized by galvanostatic method of p-Si (100) wafers followed by a thermal hydrosilation reaction of 1-undecene in refluxing toluene in order to extract alkyl-capped silicon quantum dots from porous Si. The chemical characterization of C11-SiQDs was carried out using X-ray photoemission spectroscopy (XPS). C11-SiQDs have a crystalline structure with a diameter of 5 nm. Silver nanoparticles (AgNPs) of two different sizes were synthesized also using photochemical reduction of silver nitrate with sodium dodecyl sulphate. The synthesized Ag nanoparticles have a polycrystalline structure with an average particle diameter of 100 nm and 30 nm, respectively. A significant enhancement up to 10 and 4 times in the luminescence intensities was observed for AgNPs100/C11-SiQDs and AgNPs30/C11-SiQDs mixtures, respectively using 488 nm as an excitation source. The enhancement in luminescence intensities occurs as a result of the coupling between the excitation laser light and the plasmon bands of Ag nanoparticles; thus this intense field at Ag nanoparticles surface couples strongly to C11-SiQDs. The results suggest that the larger Ag nanoparticles i.e.100 nm caused an optimum enhancement in the luminescence intensity of C11-SiQDs which reflect the strong interaction between the localized surface plasmon resonance of AgNPs and the electric field forming a strong polarization near C11-SiQDs.

Keywords: silicon quantum dots, silver nanoparticles (AgNPs), luminescence, plasmon

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2757 Silver Nanoparticles-Enhanced Luminescence Spectra of Silicon Nanocrystals

Authors: Khamael M. Abualnaja, Lidija Šiller, Benjamin R. Horrocks

Abstract:

Metal-enhanced luminescence of silicon nano crystals (SiNCs) was determined using two different particle sizes of silver nano particles (AgNPs). SiNCs have been characterized by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), Fourier transform infrared spectroscopy (FTIR) and X-ray photo electron spectroscopy (XPS). It is found that the SiNCs are crystalline with an average diameter of 65 nm and FCC lattice. AgNPs were synthesized using photochemical reduction of AgNO3 with sodium dodecyl sulphate (SDS). The enhanced luminescence of SiNCs by AgNPs was evaluated by confocal Raman microspectroscopy. Enhancement up to ×9 and ×3 times were observed for SiNCs that mixed with AgNPs which have an average particle size of 100 nm and 30 nm, respectively. Silver NPs-enhanced luminescence of SiNCs occurs as a result of the coupling between the excitation laser light and the plasmon bands of AgNPs; thus this intense field at AgNPs surface couples strongly to SiNCs.

Keywords: silver nanoparticles, surface enhanced raman spectroscopy (SERS), silicon nanocrystals, luminescence

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2756 A Review on Silicon Based Induced Resistance in Plants against Insect Pests

Authors: Asim Abbasi, Muhammad Sufyan, Muhammad Kamran, Iqra

Abstract:

Development of resistance in insect pests against various groups of insecticides has prompted the use of alternative integrated pest management approaches. Among these induced host plant resistance represents an important strategy as it offers a practical, cheap and long lasting solution to keep pests populations below economic threshold level (ETL). Silicon (Si) has a major role in regulating plant eco-relationship by providing strength to the plant in the form of anti-stress mechanism which was utilized in coping with the environmental extremes to get a better yield and quality end produce. Among biotic stresses, insect herbivore signifies one class against which Si provide defense. Silicon in its neutral form (H₄SiO₄) is absorbed by the plants via roots through an active process accompanied by the help of different transporters which were located in the plasma membrane of root cells or by a passive process mostly regulated by transpiration stream, which occurs via the xylem cells along with the water. Plants tissues mainly the epidermal cell walls are the sinks of absorbed silicon where it polymerizes in the form of amorphous silica or monosilicic acid. The noteworthy function of this absorbed silicon is to provide structural rigidity to the tissues and strength to the cell walls. Silicon has both direct and indirect effects on insect herbivores. Increased abrasiveness and hardness of epidermal plant tissues and reduced digestibility as a result of deposition of Si primarily as phytoliths within cuticle layer is now the most authenticated mechanisms of Si in enhancing plant resistance to insect herbivores. Moreover, increased Si content in the diet also impedes the efficiency by which insects transformed consumed food into the body mass. The palatability of food material has also been changed by Si application, and it also deters herbivore feeding for food. The production of defensive compounds of plants like silica and phenols have also been amplified by the exogenous application of silicon sources which results in reduction of the probing time of certain insects. Some studies also highlighted the role of silicon at the third trophic level as it also attracts natural enemies of insects attacking the crop. Hence, the inclusion of Si in pest management approaches can be a healthy and eco-friendly tool in future.

Keywords: defensive, phytoliths, resistance, stresses

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2755 Designing, Processing and Isothermal Transformation of Al-Si High Carbon Ultrafine High Strength Bainitic Steel

Authors: Mohamed K. El-Fawkhry, Ahmed Shash, Ahmed Ismail Zaki Farahat, Sherif Ali Abd El Rahman, Taha Mattar

Abstract:

High-carbon, silicon-rich steels are commonly suggested to obtain very fine bainitic microstructure at low temperature ranged from 200 to 300°C. Thereby, the resulted microstructure consists of slender of bainitic-ferritic plates interwoven with retained austenite. The advanced strength and ductility package of this steel is much dependent on the fineness of bainitic ferrite, as well as the retained austenite phase. In this article, Aluminum to Silicon ratio, and the isothermal transformation temperature have been adopted to obtain ultra high strength high carbon steel. Optical and SEM investigation of the produced steels have been performed. XRD has been used to track the retained austenite development as a result of the change in the chemical composition of developed steels and heat treatment process. Mechanical properties in terms of hardness and microhardness of obtained phases and structure were investigated. It was observed that the increment of aluminum to silicon ratio has a great effect in promoting the bainitic transformation, in tandem with improving the stability and the fineness of retained austenite. Such advanced structure leads to enhancement in the whole mechanical properties of the high carbon steel.

Keywords: high-carbon steel, silicon-rich steels, fine bainitic microstructure, retained austenite, isothermal transformation

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2754 Analysis of Sulphur-Oxidizing Bacteria Attack on Concrete Based on Waste Materials

Authors: A. Eštoková, M. Kovalčíková, A. Luptáková, A. Sičáková, M. Ondová

Abstract:

Concrete durability as an important engineering property of concrete, determining the service life of concrete structures very significantly, can be threatened and even lost due to the interactions of concrete with external environment. Bio-corrosion process caused by presence and activities of microorganisms producing sulphuric acid is a special type of sulphate deterioration of concrete materials. The effects of sulphur-oxidizing bacteria Acidithiobacillus thiooxidans on various concrete samples, based on silica fume and zeolite, were investigated in laboratory during 180 days. A laboratory study was conducted to compare the performance of concrete samples in terms of the concrete deterioration influenced by the leaching of calcium and silicon compounds from the cement matrix. The changes in the elemental concentrations of calcium and silicon in both solid samples and liquid leachates were measured by using X – ray fluorescence method. Experimental studies confirmed the silica fume based concrete samples were found out to have the best performance in terms of both silicon and calcium ions leaching.

Keywords: biocorrosion, concrete, leaching, bacteria

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2753 Design of Direct Power Controller for a High Power Neutral Point Clamped Converter Using Real-Time Simulator

Authors: Amin Zabihinejad, Philippe Viarouge

Abstract:

In this paper, a direct power control (DPC) strategies have been investigated in order to control a high power AC/DC converter with time variable load. This converter is composed of a three level three phase neutral point clamped (NPC) converter as rectifier and an H-bridge four quadrant current control converter. In the high power application, controller not only must adjust the desired outputs but also decrease the level of distortions which are injected to the network from the converter. Regarding this reason and nonlinearity of the power electronic converter, the conventional controllers cannot achieve appropriate responses. In this research, the precise mathematical analysis has been employed to design the appropriate controller in order to control the time variable load. A DPC controller has been proposed and simulated using Matlab/Simulink. In order to verify the simulation result, a real-time simulator- OPAL-RT- has been employed. In this paper, the dynamic response and stability of the high power NPC with variable load has been investigated and compared with conventional types using a real-time simulator. The results proved that the DPC controller is more stable and has more precise outputs in comparison with the conventional controller.

Keywords: direct power control, three level rectifier, real time simulator, high power application

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2752 Synthesis and Characterization of Ferromagnetic Ni-Cu Alloys for Thermal Rectification Applications

Authors: Josue Javier Martinez Flores, Jaime Alvarez Quintana

Abstract:

A thermal rectifier consists of a device which can load a different heat flow which depends on the direction of that flow. That device is a thermal diode. It is well known that heat transfer in solids basically depends on the electrical, magnetic and crystalline nature of materials via electrons, magnons and phonons as thermal energy carriers respectively. In the present research, we have synthesized polycrystalline Ni-Cu alloys and identified the Curie temperatures; and we have observed that by way of secondary phase transitions, it is possible manipulate the heat conduction in solid state thermal diodes via transition temperature. In this sense, we have succeeded in developing solid state thermal diodes with a control gate through the Curie temperature via the activation and deactivation of magnons in Ni-Cu ferromagnetic alloys at room temperature. Results show thermal diodes with thermal rectification factors up to 1.5. Besides, the performance of the electrical rectifiers can be controlled by way of alloy Cu content; hence, lower Cu content alloys present enhanced thermal rectifications factors than higher ones.

Keywords: thermal rectification, Curie temperature, ferromagnetic alloys, magnons

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2751 Space Vector Pulse Width Modulation Based Design and Simulation of a Three-Phase Voltage Source Converter Systems

Authors: Farhan Beg

Abstract:

A space vector based pulse width modulation control technique for the three-phase PWM converter is proposed in this paper. The proposed control scheme is based on a synchronous reference frame model. High performance and efficiency is obtained with regards to the DC bus voltage and the power factor considerations of the PWM rectifier thus leading to low losses. MATLAB/SIMULINK are used as a platform for the simulations and a SIMULINK model is presented in the paper. The results show that the proposed model demonstrates better performance and properties compared to the traditional SPWM method and the method improves the dynamic performance of the closed loop drastically. For the space vector based pulse width modulation, sine signal is the reference waveform and triangle waveform is the carrier waveform. When the value of sine signal is larger than triangle signal, the pulse will start producing to high; and then when the triangular signals higher than sine signal, the pulse will come to low. SPWM output will change by changing the value of the modulation index and frequency used in this system to produce more pulse width. When more pulse width is produced, the output voltage will have lower harmonics contents and the resolution will increase.

Keywords: power factor, SVPWM, PWM rectifier, SPWM

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2750 The Experience with SiC MOSFET and Buck Converter Snubber Design

Authors: Petr Vaculik

Abstract:

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber.

Keywords: SiC, Si, MOSFET, IGBT, SBD, RC snubber

Procedia PDF Downloads 435
2749 Rice Husk Silica as an Alternative Material for Renewable Energy

Authors: Benedict O. Ayomanor, Cookey Iyen, Ifeoma S. Iyen

Abstract:

Rice hull (RH) biomass product gives feasible silica for exact temperature and period. The minimal fabrication price turns its best feasible produce to metallurgical grade silicon (MG-Si). In this work, to avoid ecological worries extending from CO₂ release to oil leakage on water and land, or nuclear left-over pollution, all finally add to the immense topics of ecological squalor; high purity silicon > 98.5% emerge set from rice hull ash (RHA) by solid-liquid removal. The RHA derived was purified by nitric and hydrochloric acid solutions. Leached RHA sieved, washed in distilled water, and desiccated at 1010ºC for 4h. Extra cleansing was achieved by carefully mixing the SiO₂ ash through Mg dust at a proportion of 0.9g SiO₂ to 0.9g Mg, galvanised at 1010ºC to formula magnesium silicide. The solid produced was categorised by X-ray fluorescence (XRF), X-ray diffractometer (XRD), and Fourier transformation infrared (FTIR) spectroscopy. Elemental analysis using XRF found the percentage of silicon in the material is approximately 98.6%, main impurities are Mg (0.95%), Ca (0.09%), Fe (0.3%), K (0.25%), and Al (0.40%).

Keywords: siliceous, leached, biomass, solid-liquid extraction

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2748 Simulation for Squat Exercise of an Active Controlled Vibration Isolation and Stabilization System for Astronaut’s Exercise Platform

Authors: Ziraguen O. Williams, Shield B. Lin, Fouad N. Matari, Leslie J. Quiocho

Abstract:

In a task to assist NASA in analyzing the dynamic forces caused by operational countermeasures of an astronaut’s exercise platform impacting the spacecraft, feedback delay, and signal noise were added to a simulation model of an active-controlled vibration isolation system to regulate the movement of the exercise platform. Previous simulation work was conducted primarily via MATLAB/Simulink. Two additional simulation tools used in this study were Trick and MBDyn, NASA co-developed software simulation environments. Simulation results obtained from these three tools were very similar. All simulation results support the hypothesis that an active-controlled vibration isolation system outperforms a passive-controlled system even with the addition of feedback delay and signal noise to the active-controlled system. In this paper, squat exercise was used in creating excited force to the simulation model. The exciter force from a squat exercise was calculated from the motion capture of an exerciser. The simulation results demonstrate much greater transmitted force reduction in the active-controlled system than the passive-controlled system.

Keywords: control, counterweight, isolation, vibration

Procedia PDF Downloads 72