Search results for: optical band gap

Authors: R. Udayabhaskar, R. V. Mangalaraja, V. T. Perarasu, Saeed Farhang Sahlevani, B. Karthikeyan, David Contreras

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Bandgap engineering of CeO₂ nanocrystals is of high interest for many research groups to meet the requirement of desired applications. The band gap of CeO₂ nanostructures can be modified by varying the particle size, morphology and dopants. Anchoring the metal oxide nanostructures on graphene sheets will result in composites with improved properties than the parent materials. The presence of graphene sheets will acts a support for the growth, influences the morphology and provides external paths for electronic transitions. Thus, the controllable synthesis of ceria:graphene composites with various morphologies and the understanding of the optical properties is highly important for the usage of these materials in various applications. The development of ceria and ceria:graphene composites with low cost, rapid synthesis with tunable optical properties is still desirable. By this work, we discuss the synthesis of pure ceria (nanospheres) and ceria:graphene composites (nano-rice like morphology) by using commercial microwave oven as a cost effective and environmentally friendly approach. The influence of the graphene on the crystallinity, morphology, band gap and luminescence of the synthesized samples were analyzed. The average crystallite size obtained by using Scherrer formula of the CeO₂ nanostructures showed a decreasing trend with increasing the graphene loading. The higher graphene loaded ceria composite clearly depicted morphology of nano-rice like in shape with the diameter below 10 nm and the length over 50 nm. The presence of graphene and ceria related vibrational modes (100-4000 cm⁻¹) confirmed the successful formation of composites. We observed an increase in band gap (blue shift) with increasing loading amount of graphene. Further, the luminescence related to various F-centers was quenched in the composites. The authors gratefully acknowledge the FONDECYT Project No.: 3160142 and BECA Conicyt National Doctorado2017 No. 21170851 Government of Chile, Santiago, for the financial assistance.

Keywords: ceria, graphene, luminescence, blue shift, band gap widening

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Authors: Hailu Dessalegn, T. Srinivas

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We propose new multiple-channel piezoelectric (PZT) actuated tunable optical filter based on racetrack multi-ring resonators for wavelength de-multiplexing network applications. We design tunable eight-channel wavelength de-multiplexer consisting of eight cascaded PZT actuated tunable multi-ring resonator filter with a channel spacing of 1.6 nm. The filter for each channel is basically structured on a suspended beam, sandwiched with piezoelectric material and built in integrated ring resonators which are placed on the middle of the beam to gain uniform stress and linearly varying longitudinal strain. A reference single mode serially coupled multi stage racetrack ring resonator with the same radii and coupling length is designed with a line width of 0.8974 nm with a flat top pass band at 1dB of 0.5205 nm and free spectral range of about 14.9 nm. In each channel, a small change in the perimeter of the rings is introduced to establish the shift in resonance wavelength as per the defined channel spacing. As a result, when a DC voltage is applied, the beams will elongate, which involves mechanical deformation of the ring resonators that induces a stress and a strain, which brings a change in refractive index and perimeter of the rings leading to change in the output spectrum shift providing the tunability of central wavelength in each channel. Simultaneous wave length shift as high as 45.54 pm/V has been achieved with negligible tunability variation in the eight channel tunable optical filter proportional to the DC voltage applied in the structure, and it is capable of tuning up to 3.45 nm in each channel with a maximum loss difference of 0.22 dB in the tuning range and out of band rejection ratio of 35 dB, with a low channel crosstalk ≤ 30 dB.

Keywords: optical MEMS, piezoelectric (PZT) actuation, tunable optical filter, wavelength de-multiplexer

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Authors: Azuraida Amat, Halimah Mohamed Kamari, Che Azurahanim Che Abdullah, Ishak Mansor

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The changes of the optical and structural properties of Bismuth-Boro-Tellurite glasses pre and post gamma irradiation were studied. Six glass samples, with different compositions [(TeO2)0.7 (B2O3)0.3]1-x (Bi2O3)x prepared by melt quenching method were irradiated with 25kGy gamma radiation at room temperature. The Fourier Transform Infrared Spectroscopy (FTIR) was used to explore the structural bonding in the prepared glass samples due to exposure, while UV-VIS Spectrophotometer was used to evaluate the changes in the optical properties before and after irradiation. Gamma irradiation causes a profound changes in the peak intensity as shown by FTIR spectra which is due to the breaking of the network bonding. Before gamma irradiation, the optical band gap, Eg value decreased from 2.44 eV to 2.15 eV with the addition of Bismuth content. The value kept decreasing (from 2.18 eV to 2.00 eV) following exposure to gamma radiation due to the increase of non-bridging oxygen (NBO) and the increase of defects in the glass. In conclusion, the glass with high content of Bi2O3 (0.30Bi) give the smallest Eg and show less changes in FTIR spectra after gamma irradiation, which indicate that this glass is more resistant to gamma radiation compared to other glasses.

Keywords: boro-tellurite, bismuth, gamma radiation, optical properties

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Authors: Anton V. Bourdine, Vladimir A. Burdin, Oleg R. Delmukhametov

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This work presents a fast and simple method for the design of large core silica optical fibers with differential mode delay (DMD) management. Some results are reported concerned with refractive index profile optimization for 42 µm core 16-LP-mode optical fiber for next-generation optical networks. Here special refractive index profile form provides total DMD reducing over all mode staff under desired enhanced mode effective area. Method for the simulation of 'real manufactured' few-mode optical fiber (FMF) core geometry differing from the desired optimized structure by core non-symmetrical ellipticity and refractive index profile deviation including local fluctuations is proposed. Results of the following analysis of optimized FMF with inserted geometry distortions performed by earlier on developed modification of rigorous mixed finite-element method showed strong DMD degradation that requires additional higher-order mode management. In addition, this work also presents a method for design mode division multiplexer channel precision spatial positioning scheme at FMF core end that provides one of the potentiality solutions of described DMD degradation problem concerned with 'distorted' core geometry due to features of optical fiber manufacturing techniques.

Keywords: differential mode delay, few-mode optical fibers, nonlinear Shannon limit, optical fiber non-circularity, ‘real manufactured’ optical fiber core geometry simulation, refractive index profile optimization

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Authors: G. R. Kavitha, T. S. Indumathi

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With the constantly rising demands of the multimedia services, the requirements of long haul transport network are constantly changing in the area of optical network. Maximum data transmission using optimization of the communication channel poses the biggest challenge. Although there has been a constant focus on this area from the past decade, there was no evidence of a significant result that has been accomplished. Hence, after reviewing some potential design of optical network from literatures, it was understood that optical signal to noise ratio was one of the elementary attributes that can define the performance of the optical network. In this paper, we propose a framework termed as ECON (Enhanced Constraint-based Optical Network) that primarily optimize the optical signal to noise ratio using ROADM. The simulation is performed in Matlab and optical signal to noise ratio is extracted considering the system matrix. The outcome of the proposed study shows that optimized OSNR as compared to the existing studies.

Keywords: component, optical network, reconfigurable optical add-drop multiplexer, optical signal-to-noise ratio

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Authors: A. Elsayed, M. H. Dewaidar, M. Ghali, M. Elkemary

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The high production cost of the conventional solar cells requires the search for economic methods suitable for solar energy conversion. Cadmium Sulfide (CdS) is one of the most important semiconductors used in photovoltaics, especially in large area solar cells; and can be prepared in a thin film form by a wide variety of deposition techniques. The preparation techniques include vacuum evaporation, sputtering and molecular beam epitaxy. Other techniques, based on chemical solutions, are also used for depositing CdS films with dramatically low-cost compared to other vacuum-based methods. Although this technique is widely used during the last decades, due to simplicity and low-deposition temperature (~100°C), there is still a strong need for more information on the growth process and its relation with the quality of the deposited films. Here, we report on deposition of high-quality CdS thin films; with low-surface roughness ( < 3.0 nm) and sharp optical absorption edge; on low-temperature glass substrates (70°C) using a new method based on the room-temperature chemical solution. In this method, a mixture solution of cadmium acetate and thiourea at room temperature was used under special growth conditions for deposition of CdS films. X-ray diffraction (XRD) measurements were used to examine the crystal structure properties of the deposited CdS films. In addition, UV-VIS transmittance and low-temperature (4K) photoluminescence (PL) measurements were performed for quantifying optical properties of the deposited films. The deposited films show high optical quality as confirmed by observation of both, sharp edge in the transmittance spectra and strong PL intensity at room temperature. Furthermore, we found a strong effect of the growth conditions on the optical band gap of the deposited films; where remarkable red-shift in the absorption edge with temperature is clearly seen in both transmission and PL spectra. Such tuning of both optical band gap of the deposited CdS films can be utilized for tuning the electronic bands' alignments between CdS and other light-harvesting materials, like CuInGaSe or CdTe, for potential improvement in the efficiency of solar cells devices based on these heterostructures.

Keywords: chemical deposition, CdS, optical properties, surface, thin film

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Authors: Jihoon Park, Sungkon Yu, Byungjo Jung

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Although various optical tissue phantoms (OTPs) simulating human skin have been actively studied, their completeness is unclear because skin tissue has the intricate optical property and complicated structure disturbing the optical simulation. In this study, we designed multilayer OTP mimicking skin structure, and fabricated OTP models simulating skin-blood vessel and skin pigmentation in the skin, which are useful in Biomedical optics filed. The OTPs were characterized with the optical property and the cross-sectional structure, and analyzed by using various optical tools such as a laser speckle imaging system, OCT and a digital microscope to show the practicality. The measured optical property was within 5% error, and the thickness of each layer was uniform within 10% error in micrometer scale.

Keywords: blood vessel, optical tissue phantom, optical property, skin tissue, pigmentation

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Authors: Leila Graini

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In this paper, we demonstrate basic all-optical functions for 2R regeneration (Re-amplification and Re-shaping) based on self-similar spectral broadening in low normal dispersion and highly nonlinear fiber (ND-HNLF) to regenerate the signal through optical filtering including the transfer function characteristics, and output extinction ratio. Our approach of all-optical 2R regeneration is based on those of Mamyshev. The numerical study reveals the self-similar spectral broadening very effective for 2R all-optical regeneration; the proposed design presents high stability compared to a conventional regenerator using SPM broadening with reduction of the intensity fluctuations and improvement of the extinction ratio.

Keywords: all-optical function, 2R optical regeneration, self-similar broadening, Mamyshev regenerator

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Authors: T. M. Aminu, A. Salisu, B. Abdu, H. U. Alhassan, T. H. Dharma

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Thin films of CuAlO2 were deposited on clean glass substrate using the chemical solution deposition (sol-gel) method of deposition with CuCl and AlCl3 taken as the starting materials. CuCl was dissolved in HCl while AlCl₃ in distilled water, pH value of the mixture was controlled by addition of NaOH. The samples were annealed at different temperatures in order to determine the effect of annealing temperatures on the morphological and optical properties of the deposited CuAlO₂ thin film. The surface morphology reveals an improved crystalline as annealing temperature increases. The results of the UV-vis and FT-IR spectrophotometry indicate that the absorbance for all the samples decreases sharply from a common value of about 89% at about 329 nm to a range of values of 56.2%-35.2% and the absorption / extinction coefficients of the films decrease with increase in annealing temperature from 1.58 x 10⁻⁶ to1.08 x 10⁻⁶ at about 1.14eV in the infrared region to about 1.93 x 10⁻⁶ to 1.29 x 10⁻⁶ at about 3.62eV in the visible region, the transmittance, reflectance and band gaps vary directly with annealing temperature, the deposited films were found to be suitable in optoelectronic applications.

Keywords: copper aluminium-oxide (CuAlO2), absorbance, transmittance, reflectance, band gaps

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Authors: Hamid Merzouk, D. T. Talantikite, H. Haddad, Amel Tounsi

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ZnS is an important II-VI binary compound with large band-gap energy at room temperature. We present in this work preparation and characterization of ZnS and Cu doped ZnS thin films. The depositions are performed by a simple chemical bath deposition route. Structural properties are carried out by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Optical transmittance is investigated by the UV-visible spectroscopy at room temperature.

Keywords: chemical, bath, method, Cu, doped, ZnS, thin, films

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Authors: Valentina Alessandra Carvalho do Vale, Elmo Thiago Lins Cöuras Ford

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Increasingly telecommunications sectors are adopting optical technologies, due to its ability to transmit large amounts of data over long distances. However, as in all systems of data transmission, optical communication channels suffer from undesirable and non-deterministic effects, being essential to know the same. Thus, this research allows the assessment of these effects, as well as their characterization and beneficial uses of these effects.

Keywords: optical communication, optical fiber, non-deterministic effects, telecommunication

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Authors: Ekpekpo Arthur

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Thin films can either be conductive or dielectric (non-conductive). It is formed through atom/molecules state or formed after decomposing the materials into atomic/molecular scale by physical or chemical processes. In this study, thin films of Lead Sulphide were deposited on glass substrate prepared from lead acetate and thiourea solution using chemical bath deposition (CBD). The glass slides were subjected to the pretreatment by soaking them in a solution of 50% sulphuric acid and 50% nitric acid. Lead sulphide was deposited at different parameters such as deposition time and temperature. The optical properties of the thin films were determined from spectroscopy measurements of absorbance and reflectance. Optical studies show that the band gap of lead sulphide ranges between 0.41 eV to 300K.

Keywords: lead sulphide, spectroscopy, absorbance, reflectance

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Authors: A. Hadj Taieb, H. Ennouri

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The current study aimed to investigate the effect that optical illusion garments have on a woman’s self-perception of her own body shape. First, we created different optical illusion garment by using color contrasts. Second, a short survey based on visual perception is addressed to women in order to compare the different optical illusion garments to determine if they met the established 'ideal' body shape. A ‘visual analysis method’ was used to investigate the clothing models with optical illusions. The theories in relation with the optical illusion were used through this method. The effects of the optical illusion of color contrast on body shape in the fashion sector were tried to be revealed.

Keywords: optical illusion, color contrasts, body image perception, self-esteem

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Authors: Meriem Harmel, Houari Khachai

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We have investigated the structural, electronic and optical properties of a compound perovskite CsSrF3 using the full-potential linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT). In this approach, both the local density approximation (LDA) and the generalized gradient approximation (GGA) were used for exchange-correlation potential calculation. The ground state properties such as lattice parameter, bulk modulus and its pressure derivative were calculated and the results are compared whit experimental and theoretical data. Electronic and bonding properties are discussed from the calculations of band structure, density of states and electron charge density, where the fundamental energy gap is direct under ambient conditions. The contribution of the different bands was analyzed from the total and partial density of states curves. The optical properties (namely: the real and the imaginary parts of the dielectric function ε(ω), the refractive index n(ω) and the extinction coefficient k(ω)) were calculated for radiation up to 35.0 eV. This is the first quantitative theoretical prediction of the optical properties for the investigated compound and still awaits experimental confirmations.

Keywords: DFT, fluoroperovskite, electronic structure, optical properties

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Authors: Priyansha Sharma, Sibani Mund, Sivakumar Vaidyanathan

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Solid-state synthesis methods were used for the synthesis of pure red emissive Li¬3BaSrxCa(1-x)Eu2.7Gd0.3(MoO4)8 (x = 0.0 to 1.0) phosphors, XRD, SEM, and FTIR spectra were used to characterize the materials, and their optical properties were thoroughly investigated. PL studies were examined at different excitations 230 nm, 275nm, 465nm, and 395 nm. All the spectra show similar emissions with the highest transition at 616 nm due to ED transition. The given phosphor Li¬3BaSr0.25Ca0.75Eu2.7Gd0.3(MoO4)8 shows the highest intensity and is thus chosen for the temperature-dependent and Quantum yield study. According to the PL investigation, the phosphor-containing Eu3+ emits red light due to the (5D0 7F2) transition. The excitation analysis shows that all of the Eu3+ activated phosphors exhibited broad absorption due to the charge transfer band, O2-Mo6+, O2-Eu3+ transition, as well as narrow absorption bands related to the Eu3+ ion's 4f-4f electronic transition. Excitation spectra show Charge transfer band at 275 nm shows the highest intensity. The primary band in the spectra refers to Eu3+ ions occupying the lattice's non-centrosymmetric location. All of the compositions are monoclinic crystal structures with space group C2/c and match with reference powder patterns. The thermal stability of the 3BaSr0.25Ca0.75Eu2.7Gd0.3(MoO4)8 phosphor was investigated at (300 k- 500 K) as well as at low temperature from (20 K to 275 K) to be utilized for red and white LED fabrication. The Decay Lifetime of all the phosphor was measured. The best phosphor was used for White and Red LED fabrication.

Keywords: PL, phosphor, quantum yield, white LED

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Authors: Jaiprakash Dargad

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CdMnSe dilute semiconductor or semimagnetic semiconductors have become the focus of intense research due to their interesting combination of magnetic and semiconducting properties, and are employed in a variety of devices including solar cells, gas sensors etc. A series of thin films of this material, Cd1−xMnxSe (0 ≤ x ≤ 0.5), were therefore synthesized onto precleaned amorphous glass substrates using a solution growth technique. The sources of cadmium (Cd2+) and manganese (Mn2+) were aqueous solutions of cadmium sulphate and manganese sulphate, and selenium (Se2−) was extracted from a reflux of sodium selenosulphite. The different deposition parameters such as temperature, time of deposition, speed of mechanical churning, pH of the reaction mixture etc were optimized to yield good quality deposits. The as-grown samples were thin, relatively uniform, smooth and tightly adherent to the substrate support. The colour of the deposits changed from deep red-orange to yellowish-orange as the composition parameter, x, was varied from 0 to 0.5. The terminal layer thickness decreased with increasing value of, x. The optical energy gap decreased from 1.84 eV to 1.34 eV for the change of x from 0 to 0.5. The coefficient of optical absorption is of the order of 10-4 - 10-5 cm−1 and the type of transition (m = 0.5) is of the band-to-band direct type. The dc electrical conductivities were measured at room temperature and in the temperature range 300 K - 500 K. It was observed that the room temperature electrical conductivity increased with the composition parameter x up to 0.1, gradually decreasing thereafter. The thermo power measurements showed n-type conduction in these films.

Keywords: dilute semiconductor, reflux, CBD, thin film

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Authors: L. Mentar, O. Baka, A. Azizi

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Zinc oxide as a wide band semiconductor materials, especially nanostructured materials, have potential applications in large-area such as electronics, sensors, photovoltaic cells, photonics, optical devices and optoelectronics due to their unique electrical and optical properties and surface properties. The feasibility of ZnO for these applications is due to the successful synthesis of diverse ZnO nanostructures, including nanorings, nanobows, nanohelixes, nanosprings, nanobelts, nanotubes, nanopropellers, nanodisks, and nanocombs, by different method. Among various synthesis methods, electrochemical deposition represents a simple and inexpensive solution based method for synthesis of semiconductor nanostructures. In this study, the electrodeposition method was used to produce zinc oxide (ZnO) nanostructures on fluorine-doped tin oxide (FTO)-coated conducting glass substrate as TCO from chloride bath. We present a systematic study on the effects of the concentration of chloride anion on the properties of ZnO. The influence of KCl concentrations on the electrodeposition process, morphological, structural and optical properties of ZnO nanostructures was examined. In this research electrochemical deposition of ZnO nanostructures is investigated using conventional electrochemical measurements (cyclic voltammetry and Mott-Schottky), scanning electron microscopy (SEM), and X-ray diffraction (XRD) techniques. The potentials of electrodeposition of ZnO were determined using the cyclic voltammetry. From the Mott-Schottky measurements, the flat-band potential and the donor density for the ZnO nanostructure are determined. SEM images shows different size and morphology of the nanostructures and depends greatly on the KCl concentrations. The morphology of ZnO nanostructures is determined by the corporated action between [Zn(NO3)2] and [Cl-].Very netted hexagonal grains are observed for the nanostructures deposited at 0.1M of KCl. XRD studies revealed that the all deposited films were polycrystalline in nature with wurtzite phase. The electrodeposited thin films are found to have preferred oriented along (002) plane of the wurtzite structure of ZnO with c-axis normal to the substrate surface for sample at different concentrations of KCl. UV-Visible spectra showed a significant optical transmission (~80%), which decreased with low Cl-1 concentrations. The energy band gap values have been estimated to be between 3.52 and 3.80 eV.

Keywords: electrodeposition, ZnO, chloride ions, Mott-Schottky, SEM, XRD

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Authors: Kadam Bhambri, Neena Gupta

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All optical wavelength conversion is essential in present day optical networks for transparent interoperability, contention resolution, and wavelength routing. The incorporation of all optical wavelength convertors leads to better utilization of the network resources and hence improves the efficiency of optical networks. Wavelength convertors that can work with Dispersion Managed (DM) solitons are attractive due to their superior transmission capabilities. In this paper, wavelength conversion for dispersion managed soliton signals was demonstrated at 100 Gbps through semiconductor optical amplifier and an optical filter. The wavelength conversion was achieved for a 1550 nm input signal to1555nm output signal. The output signal was measured in terms of BER, Q factor and system margin.    

Keywords: all optical wavelength conversion, dispersion managed solitons, semiconductor optical amplifier, cross gain modultation

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Authors: C. W. Kan

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This study examines the results of optical whitening process of different textiles such as cotton, wool and polyester. The optical whitening agents used are commercially available products, and the optical whitening agents were applied to the textiles with manufacturers’ suggested methods. The aim of this study is to illustrate the proper application methods of optical whitening agent to different textiles and hence to provide guidance note to the students in learning this topic. Acknowledgment: Authors would like to thank the financial support from the Hong Kong Polytechnic University for this work.

Keywords: learning materials, optical whitening agent, wool, cotton, polyester

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Authors: Padmalochan Panda, R. Ramaseshan

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Aluminum nitride (AlN) is a potential candidate for semiconductor industry due to its wide band gap (6.2 eV), high thermal conductivity and low thermal coefficient of expansion. A-plane oriented AlN film finds an important role in deep UV-LED with higher isotropic light extraction efficiency. Also, Cr-doped AlN films exhibit dilute magnetic semiconductor property with high Curie temperature (300 K), and thus compatible with modern day microelectronics. In this work, highly a-axis oriented wurtzite AlN and Al1-xMxN (M = Cr, Ti) films have synthesized by reactive co-sputtering technique at different concentration. Crystal structure of these films is studied by Grazing incidence X-ray diffraction (GIXRD) and Transmission electron microscopy (TEM). Identification of binding energy and concentration (x) in these films is carried out by X-ray photoelectron spectroscopy (XPS). Local crystal structure around the Cr and Ti atom of these films are investigated by X-ray absorption spectroscopy (XAS). It is found that Cr and Ti replace the Al atom in AlN lattice and the bond lengths in first and second coordination sphere with N and Al, respectively, decrease concerning doping concentration due to strong p-d hybridization. The nano-indentation hardness of Cr and Ti-doped AlN films seems to increase from 17.5 GPa (AlN) to around 23 and 27.5 GPa, respectively. An-isotropic optical properties of these films are studied by the Spectroscopic Ellipsometry technique. Refractive index and extinction coefficient of these films are enhanced in normal dispersion region as compared to the parent AlN film. The optical band gap energies also seem to vary between deep UV to UV regions with the addition of Cr, thus by bringing out the usefulness of these films in the area of optoelectronic device applications.

Keywords: ellipsometry, GIXRD, hardness, XAS

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Authors: B. Bouadjemi, S. Bentata, A. Abbad, W.Benstaali

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The full-potential linearized augmented plane wave method (FP-LAPW) within the Generalized Gradient Approximation (GGA) is used to calculate the magnetic and optical properties of quaternary GaFeMnN. The results show that the compound becomes magnetic and half metallic and there is an apparition of peaks at low frequencies for the optical properties.

Keywords: optical properties, DFT, Spintronic, wave

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Authors: Riffat Kalsoom, Qurat-Ul-Ain Javed

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Optical and dielectric properties of lithium niobates have made them the fascinating materials to be used in optical industry for device formation such as Q and optical switching. Synthesis of lithium niobates was carried out by solvothermal process with and without temperature fluctuation at 200°C for 4 hrs, and behavior of properties for different durations was also examined. Prepared samples of LiNbO₃ were examined in a way as crystallographic phases by using XRD diffractometer, morphology by scanning electron microscope (SEM), absorption by UV-Visible Spectroscopy and dielectric measurement by impedance analyzer. A structural change from trigonal to spherical shape was observed by changing the time of reaction. Crystallite size decreases by the temperature fluctuation and increasing reaction time. Band gap decreases whereas dielectric constant and dielectric loss was increased with increasing time of reaction. Trend of AC conductivity is explained by Joschner’s power law. Due to these significant properties, it finds its applications in devices, such as cells, Q switching and optical switching for laser and gigahertz frequencies, respectively and these applications depend on the industrial demands.

Keywords: lithium niobates, renewable energy devices, controlled structure, temperature fluctuations

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Authors: Rupali Mane

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Cadmium sulfide (Cds) thin films were chemically deposited at room temperature, from aqueous ammonia solution using CdCl₂ (Cadmium chloride) as a Cd²⁺ and CS(NH₂)₂ (Thiourea) as S² ion sources. ‘as-deposited’ films were uniform, well adherent to the glass substrate, secularly reflective and yellowish in color. The ‘as-deposited ’Cds layers grew with nano-crystalline in nature and exhibit cubic structure, with blue-shift in optical band gap. The films were annealed in air atmosphere for two hours at different temperatures and further characterized for compositional, structural, morphological and optical properties. The XRD and SEM studies clearly revealed the systematic changes in morphological and structural form of Cds films with an improvement in the crystal quality. The annealed films showed ‘red-shift’ in the optical spectra after thermal treatment. The Thiourea modified CdS film could be good to provide solar cell application.

Keywords: cadmium sulfide, thin films, nano-crystalline, XRD

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Authors: Ramnath Narhete, Saket Pandey, Puran Gour

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This paper presents of dual-band planner antenna with a compact radiator for 2.4/5.2/5.8 proposed by optimizing its resonant frequency, Bandwidth of operation and radiation frequency using the genetic algorithm. The antenna consists L-shaped and E-shaped radiating element to generate two resonant modes for dual band operation. The above techniques have been successfully used in many applications. Dual band antenna with the compact radiator for 2.4/5.2/5.8 GHz WLAN application design and radiator size only width 8mm and a length is 11.3 mm. The antenna can we used for various application in the field of communication. Genetic algorithm will be used to design the antenna and impedance matching network.

Keywords: genetic algorithm, dual-band E, dual-band L, WLAN, compact radiator

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Authors: Boudene Maamar, Xu Mai

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Optical Intersatellite Links (OISLs) are wireless communications using optical signals to interconnect satellites. It is expected to be the next generation wireless communication technology according to its inherent characteristics like: an increased bandwidth, a high data rate, a data transmission security, an immunity to interference, and an unregulated spectrum etc. Optical space links are the best choice for the classical communication schemes due to its distinctive properties; high frequency, small antenna diameter and lowest transmitted power, which are critical factors to define a space communication. This paper discusses the development of free space technology and analyses the parameters and factors to establish a reliable intersatellite links using an optical signal to exchange data between satellites.

Keywords: optical intersatellite links, optical wireless communications, free space optical communications, next generation wireless communication

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Authors: Esubalew Yehualaw Melaku, Tizazu Abeza

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ZnSe thin films in an aqueous solution of zinc acetate and hydrazine hydrate (HH) using the non-toxic complexing agent EDTA along with the films were annealed at 200, 300, and 400oC. This research aimed to investigate the effect of annealing on the structural, optical, and electrical properties of the films. X-ray diffraction (XRD) analysis was used to study the structure and crystallite size of the ZnSe thin film. The ZnSe thin films are annealed in an oven at various temperatures which are characterized by structural and optical properties. An increase in annealing temperature distorted the nanocrystillinity and made the ZnSe thin films amorphous. The variation of resistivity indicates the semiconducting nature of the thin film. The electrical resistivity of the films decreases with increasing annealing temperature. In this study, the Band gap of ZnSe decreases from 2.8eV to 2.65eV with the increase in temperature and decreases for as-deposited to 2.5eV. As a result of this research, ZnSe is used for certain applications; it has been widely utilized in various optoelectronic devices such as thin film solar cells, green-blue light emitting diodes, lasers, photo-luminescent, and electro-luminescent devices.

Keywords: chemical bath deposition, ZnSe thin film, band gap, solar cells

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Authors: Yasaman Tabari-Saadi, Kaiwen Sun, Jialiang Huang, Martin Green, Xiaojing Hao

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Optical and electrical properties of p-type AgBiS₂ absorber material have been improved by copper doping on silver sites. X-Ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analysis suggest that complete solid solutions of Ag₁₋ₓCuₓBiS₂ thin film have been formed. The carrier concentration of pure AgBiS₂ thin film deposited by the chemical process is 4.5*E+14 cm⁻³, and copper doping leads to the improved carrier concentration despite the semiconductor AgBiS₂ remains p-type semiconductor. Copper doping directly changed the absorption coefficient and increased the optical band gap (~1.5eV), which makes it a promising absorber for thin-film solar cell applications.

Keywords: copper doped, AgBiS₂, thin-film solar cell, carrier concentration, p-type semiconductor

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Authors: Sanjay Kumar, Dinesh Pathak, Sudhir Saralch

Abstract:

Copper oxide is a semiconductor that has been studied for several reasons such as the natural abundance of starting material copper (Cu); the easiness of production by Cu oxidation; their non-toxic nature and the reasonably good electrical and optical properties. Copper oxide is well-known as cuprite oxide. The cuprite is p-type semiconductors having band gap energy of 1.21 to 1.51 eV. As a p-type semiconductor, conduction arises from the presence of holes in the valence band (VB) due to doping/annealing. CuO is attractive as a selective solar absorber since it has high solar absorbency and a low thermal emittance. CuO is very promising candidate for solar cell applications as it is a suitable material for photovoltaic energy conversion. It has been demonstrated that the dip technique can be used to deposit CuO films in a simple manner using metallic chlorides (CuCl₂.2H₂O) as a starting material. Copper oxide films are prepared using a methanolic solution of cupric chloride (CuCl₂.2H₂O) at three baking temperatures. We made three samples, after heating which converts to black colour. XRD data confirm that the films are of CuO phases at a particular temperature. The optical band gap of the CuO films calculated from optical absorption measurements is 1.90 eV which is quite comparable to the reported value. Dip technique is a very simple and low-cost method, which requires no sophisticated specialized setup. Coating of the substrate with a large surface area can be easily obtained by this technique compared to that in physical evaporation techniques and spray pyrolysis. Another advantage of the dip technique is that it is very easy to coat both sides of the substrate instead of only one and to deposit otherwise inaccessible surfaces. This method is well suited for applying coating on the inner and outer surfaces of tubes of various diameters and shapes. The main advantage of the dip coating method lies in the fact that it is possible to deposit a variety of layers having good homogeneity and mechanical and chemical stability with a very simple setup. In this paper, the CuO thin films preparation by dip coating method and their characterization will be presented.

Keywords: absorber material, cupric oxide, dip coating, thin film

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Authors: A. Bouloufa, K. Djessas

Abstract:

In this paper, we reported the effect of substrate temperature on the structural, electrical and optical properties of In2S3 thin films deposited on soda-lime glass substrates by physical vapor deposition technique at various substrate temperatures. The In2Se3 material used for deposition was synthesized from its constituent elements. It was found that all samples exhibit one phase which corresponds to β-In2S3 phase. Values of band gap energy of the films obtained at different substrate temperatures vary in the range of 2.38-2.80 eV and decrease with increasing substrate temperature.

Keywords: buffer layer, In2S3, optical properties, PVD, structural properties

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Authors: Srilaxmi Gangula, MahaLakshmi Vinukonda, Neeraj Rao

Abstract:

A wide band polarization insensitive metamaterial absorber with bandwidth enhancement in X and C band is proposed. The structure proposed here consists of a periodic unit cell of resonator arrangements in double layer. The proposed structure shows near unity absorption at frequencies of 6.21 GHz and 10.372 GHz spreading over a bandwidth of 1 GHz and 6.21 GHz respectively in X and C bands. The proposed metamaterial absorber is designed so as to increase the bandwidth. The proposed structure is also independent for TE and TM polarization. Because of its simple implementation, near unity absorption and wide bandwidth this dual band polarization insensitive metamaterial absorber can be used for EMI/EMC applications.

Keywords: absorber, C-band, metamaterial, multilayer, X-band

Procedia PDF Downloads 102