Search results for: indium tin oxide
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 1410

Search results for: indium tin oxide

1410 Indium Oxide/Scandium Doping Yttria-Stabilized Zirconia Composite Films as Electrolytes for Solid Oxide Fuel Cells

Authors: Yong-Jie Lin, Yi-Feng Lin

Abstract:

In this study, scandium-doped yttria-stabilized zirconia (ScYSZ) and In2O3 nanoparticles (NPs) with cubic crystalline structures were successfully prepared using a facile hydrothermal process. ScYSZ films were prepared by the pressing of ScYSZ NPs and were further used for the electrolyte of solid oxide fuel cells (SOFCs). To increase the ionic conductivity of the ScYSZ electrolyte, different amounts of In2O3 NPs [0 wt% (X(In2O3)=0), 0.21 wt% (X(In2O3)=0.001) and 1.13 wt% (X(In2O3)=0.005)] were doped in the ScYSZ films to increase their oxygen vacancy. The result shows In2O3 NP/ScYSZ films with 1.13 wt% (X(In2O3 )=0.005) In2O3 NPs doping are with largest ionic conductivity of 0.057Ω-1 cm-1 at 900oC, which is 1.6 and 1.8 times higher than YSZ and In2O3 NP/ScYSZ films with 0.21 wt% (X(In2O3)=0.001) In2O3 NPs doping, respectively.

Keywords: indium oxide/scandium doping Yttria-stabilized zirconia, solid oxide fuel cells, scandium-doped yttria-stabilized zirconia, indium oxide

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1409 Economic and Environmental Benefits of the Indium Recycling from the Waste Liquid Crystal Displays in China

Authors: Wu Yufeng, Gu Yifan, Wang Hengguang, Gongyu, Zuo Tieyong

Abstract:

Indium is one the scarce resources which can be only used less than 30 years, and more than 70% of the indium is used for the production of the LCD. The benefit of recycling Indium from waste LCD is large. Take the LCD-TV for example, the yield of which was close to 90 million units in 2010. If it was available to recycle the indium effectively, the yield of the secondary-indium could reach up to 110 metric ton, which accounted for one third of the primary indium production in China. And compared with the dispersion and long process extraction of the primary indium resources, secondary indium concentrates in the waste LCD, the exploitation has great economic and environmental benefits. However, the potential benefits were indefinite, resulting in China’s government did not pay enough attention to the indium recycling industry. In our study, an estimation model was constructed to analyze the potential of the indium in the waste LCD. The different types of LCD were detected to find out the content of indium. Then, the potential of the indium in the waste LCD was estimated in China. Furthermore, the pollution emissions of the product process of the primary and secondary indium was analyzed respectively to calculate the economic and environmental benefits of the indium recycling from the waste LCD in China.

Keywords: indium recycling, waste liquid crystal displays, benefits, China

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1408 Compositional Dependence of Hydroxylated Indium-Oxide on the Reaction Rate of CO2/H2 Reduction

Authors: Joel Y. Y. Loh, Geoffrey A. Ozin, Charles A. Mims, Nazir P. Kherani

Abstract:

A major goal in the emerging field of solar fuels is to realize an ‘artificial leaf’ – a material that converts light energy in the form of solar photons into chemical energy – using CO2 as a feedstock to generate useful chemical species. Enabling this technology will allow the greenhouse gas, CO2, emitted from energy and manufacturing production exhaust streams to be converted into valuable solar fuels or chemical products. Indium Oxide (In2O3) with surface hydroxyl (OH) groups have been shown to reduce CO2 in the presence of H2 to CO with a reaction rate of 15 μmol gcat−1 h−1. The likely mechanism is via a Frustrated Lewis Pair sites heterolytically splitting H2 to be absorbed and form protonic and hydric sites that can dissociate CO2. In this study, we investigate the dependence of oxygen composition of In2O3 on the CO2 reduction rate. In2O3-x films on quartz fiber paper were DC sputtered with an Indium target and varying O2/Ar plasma mixture. OH surface groups were then introduced by immersing the In2O3-x samples in KOH. We show that hydroxylated In2O3-x reduces more CO2 than non-hydroxylated groups and that a hydroxylated and higher O2/Ar ratio sputtered In2O3-x has a higher reaction rate of 45 μmol gcat-1 h-1. We show by electrical resistivity-temperature curves that H2 is adsorbed onto the surface of In2O3 whereas CO2 itself does not affect the indium oxide surface. We also present activation and ionization energy levels of the hydroxylated In2O3-x under vacuum, CO2 and H2 atmosphere conditions.

Keywords: solar fuels, photocatalysis, indium oxide nanoparticles, carbon dioxide

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1407 To Investigate the Effects of Potassium Ion Doping and Oxygen Vacancies in Thin-Film Transistors of Gallium Oxide-Indium Oxide on Their Electrical

Authors: Peihao Huang, Chun Zhao

Abstract:

Thin-film transistors(TFTs) have the advantages of low power consumption, short reaction time, and have high research value in the field of semiconductors, based on this reason, people have focused on gallium oxide-indium oxide thin-film transistors, a relatively common thin-film transistor, elaborated and analyzed his production process, "aqueous solution method", explained the purpose of each step of operation, and finally explored the influence of potassium ions doped in the channel layer on the electrical properties of the device, as well as the effect of oxygen vacancies on its switching ratio and memory, and summarized the conclusions.

Keywords: aqueous solution, oxygen vacancies, switch ratio, thin-film transistor(TFT)

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1406 Studies on Physico-Chemical Properties of Indium Sulfide Films Deposited under Different Deposition Conditions by Chemical Bath Deposition

Authors: S. B. Bansode, V. G. Wagh, R. S. Kapadnis, S. S. Kale, M. Pathan Habib

Abstract:

Indium sulfide films have been deposited using chemical bath deposition onto glass and indium tin oxide coated glass substrates. The influences of different deposition parameters viz. substrate and pH have been studied. The films were characterized by different techniques with respect to their crystal structure, surface morphology and compositional property by means of X-ray diffraction, scanning electron microscopy, Energy dispersive spectroscopy and optical absorption. X-ray diffraction studies revealed that amorphous nature of the films. The scanning electron microscopy of as deposited indium sulfide film on ITO coated glass substrate shows random orientation of grains where as those on glass substrates show dumbbell shape. Optical absorption study revealed that band gap varies from 2.29 to 2.79 eV for the deposited film.

Keywords: chemical bath deposition, optical properties, structural property, Indium sulfide

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1405 Effect of Surface-Modification of Indium Tin Oxide Particles on Their Electrical Conductivity

Authors: Y. Kobayashi, T. Kurosaka, K. Yamamura, T. Yonezawa, K. Yamasaki

Abstract:

The present work reports an effect of surface- modification of indium tin oxide (ITO) particles with chemicals on their electronic conductivity properties. Examined chemicals were polyvinyl alcohol (nonionic polymer), poly(diallyl dimethyl ammonium chloride) (cationic polymer), poly(sodium 4-styrene-sulfonate) (anionic polymer), (2-aminopropyl) trimethoxy silane (APMS) (silane coupling agent with amino group), and (3-mercaptopropyl) trimethoxy silane (MPS) (silane coupling agent with thiol group). For all the examined chemicals, volume resistivities of surface-modified ITO particles did not increase much when they were aged in air at 80 oC, compared to a volume resistivity of un-surface-modified ITO particles. Increases in volume resistivities of ITO particles surface-modified with the silane coupling agents were smaller than those with the polymers, since hydrolysis of the silane coupling agents and condensation of generated silanol and OH groups on ITO particles took place to provide efficient immobilization of them on particles. The APMS gave an increase in volume resistivity smaller than the MPS, since a larger solubility in water of APMS providing a larger amount of APMS immobilized on particles.

Keywords: indium tin oxide, particles, surface-modification, volume resistivity

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1404 Development of Sulfite Biosensor Based on Sulfite Oxidase Immobilized on 3-Aminoproplytriethoxysilane Modified Indium Tin Oxide Electrode

Authors: Pawasuth Saengdee, Chamras Promptmas, Ting Zeng, Silke Leimkühler, Ulla Wollenberger

Abstract:

Sulfite has been used as a versatile preservative to limit the microbial growth and to control the taste in some food and beverage. However, it has been reported to cause a wide spectrum of severe adverse reactions. Therefore, it is important to determine the amount of sulfite in food and beverage to ensure consumer safety. An efficient electrocatalytic biosensor for sulfite detection was developed by immobilizing of human sulfite oxidase (hSO) on 3-aminoproplytriethoxysilane (APTES) modified indium tin oxide (ITO) electrode. Cyclic voltammetry was employed to investigate the electrochemical characteristics of the hSO modified ITO electrode for various pretreatment and binding conditions. Amperometry was also utilized to demonstrate the current responses of the sulfite sensor toward sodium sulfite in an aqueous solution at a potential of 0 V (vs. Ag/AgCl 1 M KCl). The proposed sulfite sensor has a linear range between 0.5 to 2 mM with a correlation coefficient 0.972. Then, the additional polymer layer of PVA was introduced to extend the linear range of sulfite sensor and protect the enzyme. The linear range of sulfite sensor with 5% coverage increases from 2.8 to 20 mM at a correlation coefficient of 0.983. In addition, the stability of sulfite sensor with 5% PVA coverage increases until 14 days when kept in 0.5 mM Tris-buffer, pH 7.0 at 4 8C. Therefore, this sensor could be applied for the detection of sulfite in the real sample, especially in food and beverage.

Keywords: sulfite oxidase, bioelectrocatalytsis, indium tin oxide, direct electrochemistry, sulfite sensor

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1403 Effect of Al on Glancing Angle Deposition Synthesized In₂O₃ Nanocolumn for Photodetector Application

Authors: Chitralekha Ngangbam, Aniruddha Mondal, Naorem Khelchand Singh

Abstract:

Aluminium (Al) doped In2O3 (Indium Oxide) nanocolumn array was synthesized by glancing angle deposition (GLAD) technique on Si (n-type) substrate for photodetector application. The sample was characterized by scanning electron microscopy (SEM). The average diameter of the nanocolumn was calculated from the top view of the SEM image and found to be ∼80 nm. The length of the nanocolumn (~500 nm) was calculated from cross sectional SEM image and it shows that the nanocolumns are perpendicular to the substrate. The EDX analysis confirmed the presence of Al (Aluminium), In (Indium), O (Oxygen) elements in the samples. The XRD patterns of the Al-doped In2O3 nanocolumn show the presence of different phases of the Al doped In2O3 nanocolumn i.e. (222) and (622). Three different peaks were observed from the PL analysis of Al doped In2O3 nanocolumn at 365 nm, 415 nm and 435 nm respectively. The peak at PL emission at 365 nm can be attributed to the near band gap transition of In2O3 whereas the peaks at 415 nm and 435 nm can be attributed to the trap state emissions due to oxygen vacancies and oxygen–indium vacancy centre in Al doped In2O3 nanocolumn. The current-voltage (I–V) characteristics of the Al doped In2O3 nanocolumn based detector was measured through the Au Schottky contact. The devices were then examined under the halogen light (20 W) illumination for photocurrent measurement. The Al-doped In2O3 nanocolumn based optical detector showed high conductivity and low turn on voltage at 0.69 V under white light illumination. A maximum photoresponsivity of 82 A/W at 380 nm was observed for the device. The device shows a high internal gain of ~267 at UV region (380 nm) and ∼127 at visible region (760 nm). Also the rise time and fall time for the device at 650 nm is 0.15 and 0.16 sec respectively which makes it suitable for fast response detector.

Keywords: glancing angle deposition, nanocolumn, semiconductor, photodetector, indium oxide

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1402 Indium-Gallium-Zinc Oxide Photosynaptic Device with Alkylated Graphene Oxide for Optoelectronic Spike Processing

Authors: Seyong Oh, Jin-Hong Park

Abstract:

Recently, neuromorphic computing based on brain-inspired artificial neural networks (ANNs) has attracted huge amount of research interests due to the technological abilities to facilitate massively parallel, low-energy consuming, and event-driven computing. In particular, research on artificial synapse that imitate biological synapses responsible for human information processing and memory is in the spotlight. Here, we demonstrate a photosynaptic device, wherein a synaptic weight is governed by a mixed spike consisting of voltage and light spikes. Compared to the device operated only by the voltage spike, ∆G in the proposed photosynaptic device significantly increased from -2.32nS to 5.95nS with no degradation of nonlinearity (NL) (potentiation/depression values were changed from 4.24/8 to 5/8). Furthermore, the Modified National Institute of Standards and Technology (MNIST) digit pattern recognition rates improved from 36% and 49% to 50% and 62% in ANNs consisting of the synaptic devices with 20 and 100 weight states, respectively. We expect that the photosynaptic device technology processed by optoelectronic spike will play an important role in implementing the neuromorphic computing systems in the future.

Keywords: optoelectronic synapse, IGZO (Indium-Gallium-Zinc Oxide) photosynaptic device, optoelectronic spiking process, neuromorphic computing

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1401 Electrospinning in situ Synthesis of Graphene-Doped Copper Indium Disulfide Composite Nanofibers for Efficient Counter Electrode in Dye-Sensitized Solar Cells

Authors: Lidan Wang, Shuyuan Zhao, Jianxin He

Abstract:

In this paper, graphene-doped copper indium disulfide (rGO+CuInS2) composite nanofibers were fabricated via electrospinning, in situ synthesis, and carbonization, using polyvinyl pyrrolidone (PVP), copper dichloride (CuCl2), indium trichloride (InCl3), thiourea (C2H5NS) and graphene oxide nanosheets (Go) as the precursor solution for electrospinning. The average diameter of rGO+CuInS2 nanofibers were about 100 nm, and graphene nanosheets anchored with chalcopyrite CuInS2 nanocrystals 8-15 nm in diameter were overlapped and embedded, aligning along the fiber axial direction. The DSSC with a rGO+CuInS2 counter electrode exhibits a power conversion efficiency of 5.93%; better than the corresponding values for a DSSC with a CuInS2 counter electrode, and comparable to that of a reference DSSC with a Pt counter electrode. The excellent photoelectric performance of the rGO+CuInS2 counter electrode was attributed to its high specific surface area, which facilitated permeation of the liquid electrolytes, promoted electron and ion transfer and provided numerous catalytically active sites for the oxidation reaction of the electrolytic (I- /I3-).

Keywords: dye-sensitized solar cells, counter electrode, electrospinning, graphene

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1400 Spectroscopic Characterization of Indium-Tin Laser Ablated Plasma

Authors: Muhammad Hanif, Muhammad Salik

Abstract:

In the present research work we present the optical emission studies of the Indium (In)-Tin (Sn) plasma produced by the first (1064 nm) harmonic of an Nd: YAG nanosecond pulsed laser. The experimentally observed line profiles of neutral Indium (InI) and Tin (SnI) are used to extract the electron temperature (Te) using the Boltzmann plot method. Whereas, the electron number density (Ne) has been determined from the Stark broadening line profile method. The Te is calculated by varying the distance from the target surface along the line of propagation of plasma plume and also by varying the laser irradiance. Beside we have studied the variation of Ne as a function of laser irradiance as well as its variation with distance from the target surface.

Keywords: indium-tin plasma, laser ablation, optical emission spectroscopy, electron temperature, electron number density

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1399 Preparation of Indium Tin Oxide Nanoparticle-Modified 3-Aminopropyltrimethoxysilane-Functionalized Indium Tin Oxide Electrode for Electrochemical Sulfide Detection

Authors: Md. Abdul Aziz

Abstract:

Sulfide ion is water soluble, highly corrosive, toxic and harmful to the human beings. As a result, knowing the exact concentration of sulfide in water is very important. However, the existing detection and quantification methods have several shortcomings, such as high cost, low sensitivity, and massive instrumentation. Consequently, the development of novel sulfide sensor is relevant. Nevertheless, electrochemical methods gained enormous popularity due to a vast improvement in the technique and instrumentation, portability, low cost, rapid analysis and simplicity of design. Successful field application of electrochemical devices still requires vast improvement, which depends on the physical, chemical and electrochemical aspects of the working electrode. The working electrode made of bulk gold (Au) and platinum (Pt) are quite common, being very robust and endowed with good electrocatalytic properties. High cost, and electrode poisoning, however, have so far hindered their practical application in many industries. To overcome these obstacles, we developed a sulfide sensor based on an indium tin oxide nanoparticle (ITONP)-modified ITO electrode. To prepare ITONP-modified ITO, various methods were tested. Drop-drying of ITONPs (aq.) on aminopropyltrimethoxysilane-functionalized ITO (APTMS/ITO) was found to be the best method on the basis of voltammetric analysis of the sulfide ion. ITONP-modified APTMS/ITO (ITONP/APTMS/ITO) yielded much better electrocatalytic properties toward sulfide electro-οxidation than did bare or APTMS/ITO electrodes. The ITONPs and ITONP-modified ITO were also characterized using transmission electron microscopy and field emission scanning electron microscopy, respectively. Optimization of the type of inert electrolyte and pH yielded an ITONP/APTMS/ITO detector whose amperometrically and chronocoulοmetrically determined limits of detection for sulfide in aqueous solution were 3.0 µM and 0.90 µM, respectively. ITONP/APTMS/ITO electrodes which displayed reproducible performances were highly stable and were not susceptible to interference by common contaminants. Thus, the developed electrode can be considered as a promising tool for sensing sulfide.

Keywords: amperometry, chronocoulometry, electrocatalytic properties, ITO-nanoparticle-modified ITO, sulfide sensor

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1398 FTIR and AFM Properties of Doubly Doped Tin Oxide Thin Films Prepared by Spin Coating Technique

Authors: Bahattin Duzgun, Adem Kocyigit, Demet Tatar, Ahmet Battal

Abstract:

Tin oxide thin films are semiconductor materials highly transparent and with high mechanical and chemical stability, except for their interactions with oxygen atoms at high temperature. Many dopants, such as antimony (Sb), arsenic (As), fluorine (F), indium (In), molybdenum and (Mo) etc. have been used to improve the electrical properties of tin oxide films. Among these, Sb and F are found to be the most commonly used dopants for solar cell layers. Also Tin oxide tin films investigated and characterized by researchers different film deposition and analysis method. In this study, tin oxide thin films are deposited on glass substrate by spin coating technique and characterized by FTIR and AFM. FTIR spectroscopy revealed that all films have O-Sn-O and Sn-OH vibration bonds not changing with layer effect. AFM analysis indicates that all films are homogeneity and uniform. It can be seen that all films have needle shape structure in their surfaces. Uniformity and homogeneity of the films generally increased for increasing layers. The results found in present study showed that doubly doped SnO2 thin films is a good candidate for solar cells and other optoelectronic and technological applications.

Keywords: doubly doped, spin coating, FTIR analysis, AFM analysis

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1397 Highly Sensitive Nanostructured Chromium Oxide Sensor for Analysis of Diabetic Patient’s Breath

Authors: Nipin Kohli, Ravi Chand Singh

Abstract:

Diabetes mellitus is a serious illness and can be life-threatening if left untreated. Acetone present in the exhaled breath of a diabetic person is a biomarker of patients suffering from diabetes mellitus and is higher than its usual concentration present in the breath of healthy people. In the present work, a portable gas sensor system based on chromium oxide (Cr₂O₃) nanoparticles has been developed that can analyze diabetic patient’s breath. Undoped and indium (In) doped Cr₂O₃ nanoparticles were synthesized by a chemical route and characterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy, UV-visible spectroscopy, and photoluminescence spectroscopy for their structural, morphological and optical properties. Thick film gas sensors were fabricated out of synthesized samples. To diagnose diabetes, the sensors’ response to low concentrations of acetone was measured, and it was found that the addition of indium dramatically enhances the acetone gas sensing response. Moreover, the fabricated sensors were highly stable, reproducible and resistant to humidity. Enhancement of sensor response of doped sensors towards acetone can be ascribed to increase in defects due to addition of a dopant, and it was found that in-doped Cr₂O₃ sensors are more useful for analysis of breath of diabetic patients.

Keywords: Diabetes mellitus, nanoparticles, raman spectroscopy, sensor

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1396 Structural and Morphological Study of Europium Doped ZnO

Authors: Abdelhak Nouri

Abstract:

Europium doped zinc oxide nanocolumns (ZnO:Eu) were deposited on indium tin oxide (ITO) substrate from an aqueous solution of 10⁻³M Zn(NO₃)₂ and 0.5M KNO₃ with different concentration of europium ions. The deposition was performed in a classical three-electrode electrochemical cell. The structural, morphology and optical properties have been characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM). The XRD results show high quality of crystallite with preferential orientation along c-axis. SEM images speculate ZnO: Eu has nanocolumnar form with hexagonal shape. The diameter of nanocolumns is around 230 nm. Furthermore, it was found that tail of crystallite, roughness, and band gap energy is highly influenced with increasing Eu ions concentration. The average grain size is about 102 nm to 125 nm.

Keywords: deterioration lattice, doping, nanostructures, Eu:ZnO

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1395 A Comparative Study of Single- and Multi-Walled Carbon Nanotube Incorporation to Indium Tin Oxide Electrodes for Solar Cells

Authors: G. Gokceli, O. Eksik, E. Ozkan Zayim, N. Karatepe

Abstract:

Alternative electrode materials for optoelectronic devices have been widely investigated in recent years. Since indium tin oxide (ITO) is the most preferred transparent conductive electrode, producing ITO films by simple and cost-effective solution-based techniques with enhanced optical and electrical properties has great importance. In this study, single- and multi-walled carbon nanotubes (SWCNT and MWCNT) incorporated into the ITO structure to increase electrical conductivity, mechanical strength, and chemical stability. Carbon nanotubes (CNTs) were firstly functionalized by acid treatment (HNO3:H2SO4), and the thermal resistance of CNTs after functionalization was determined by thermogravimetric analysis (TGA). Thin films were then prepared by spin coating technique and characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), four-point probe measurement system and UV-Vis spectrophotometer. The effects of process parameters were compared for ITO, MWCNT-ITO, and SWCNT-ITO films. Two factors including CNT concentration and annealing temperature were considered. The UV-Vis measurements demonstrated that the transmittance of ITO films was 83.58% at 550 nm, which was decreased depending on the concentration of CNT dopant. On the other hand, both CNT dopants provided an enhancement in the crystalline structure and electrical conductivity. Due to compatible diameter and better dispersibility of SWCNTs in the ITO solution, the best result in terms of electrical conductivity was obtained by SWCNT-ITO films with the 0.1 g/L SWCNT dopant concentration and heat-treatment at 550 °C for 1 hour.

Keywords: CNT incorporation, ITO electrode, spin coating, thin film

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1394 Copper Doped P-Type Nickel Oxide Transparent Conducting Oxide Thin Films

Authors: Kai Huang, Assamen Ayalew Ejigu, Mu-Jie Lin, Liang-Chiun Chao

Abstract:

Nickel oxide and copper-nickel oxide thin films have been successfully deposited by reactive ion beam sputter deposition. Experimental results show that nickel oxide deposited at 300°C is single phase NiO while best crystalline quality is achieved with an O_pf of 0.5. XRD analysis of nickel-copper oxide deposited at 300°C shows a Ni2O3 like crystalline structure at low O_pf while changes to NiO like crystalline structure at high O_pf. EDS analysis shows that nickel-copper oxide deposited at low O_pf is CuxNi2-xO3 with x = 1, while nickel-copper oxide deposited at high O_pf is CuxNi1-xO with x = 0.5, which is supported by Raman analysis. The bandgap of NiO is ~ 3.5 eV regardless of O_pf while the band gap of nickel-copper oxide decreases from 3.2 to 2.3 eV as Opf reaches 1.0.

Keywords: copper, ion beam, NiO, oxide, resistivity, transparent

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1393 Green Synthesis of Copper Oxide and Cobalt Oxide Nanoparticles Using Spinacia Oleracea Leaf Extract

Authors: Yameen Ahmed, Jamshid Hussain, Farman Ullah, Sohaib Asif

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The investigation aims at the synthesis of copper oxide and cobalt oxide nanoparticles using Spinacia oleracea leaf extract. These nanoparticles have many properties and applications. They possess antimicrobial catalytic properties and also they can be used in energy storage materials, gas sensors, etc. The Spinacia oleracea leaf extract behaves as a reducing agent in nanoparticle synthesis. The plant extract was first prepared and then treated with copper and cobalt salt solutions to get the precipitate. The salt solutions used for this purpose are copper sulfate pentahydrate (CuSO₄.5H₂O) and cobalt chloride hexahydrate (CoCl₂.6H₂O). The UV-Vis, XRD, EDX, and SEM techniques are used to find the optical, structural, and morphological properties of copper oxide and cobalt oxide nanoparticles. The UV absorption peaks are at 326 nm and 506 nm for copper oxide and cobalt oxide nanoparticles.

Keywords: cobalt oxide, copper oxide, green synthesis, nanoparticles

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1392 Evaluation of Total Antioxidant Activity (TAC) of Copper Oxide Decorated Reduced Graphene Oxide (CuO-rGO) at Different Stirring time

Authors: Aicha Bensouici, Assia Mili, Naouel Rdjem, Nacera Baali

Abstract:

Copper oxide decorated reduced graphene oxide (GO) was obtained successfully using two steps route synthesis was used. Firstly, graphene oxide was obtained using a modified Hummers method by excluding sodium nitrate from starting materials. After washing-centrifugation routine pristine GO was decorated by copper oxide using a refluxation technique at 120°C during 2h, and an equal amount of GO and copper acetate was used. Three CuO-rGO nanocomposite samples types were obtained at 30min, 24h, and 7 day stirring time. TAC results show dose dependent behavior of CuO-rGO and confirm no influence of stirring time on antioxidant properties, 30min is considered as an optimal stirring condition.

Keywords: copper oxide, reduced graphene oxide, TAC, GO

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1391 High Quality Gallium Oxide Microstructures by Catalyst-Free Thermal Oxidation

Authors: Jiang-Bei Qin, Rui-Xia Miao, Wei Ren

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In this study, high crystalline gallium oxide microstructures (wires, belts, and sheets) were synthesized by catalyst-free thermal oxidation. Structural studies such as X-ray diffraction, Raman and transmission electron microscope (TEM) investigations on the microstructures showed monoclinic phase of gallium oxide and single crystalline structure. The scanning electron microscopy (SEM) observations revealed that a huge super microsheet even grows up to 450 µm in length and 206 µm in width. Gallium oxide microstructures exhibit high crystallinity along (002) and (401), respectively. The PL spectrum of these microstructures excites a blue light band centered at 441 and 489nm. The growth mechanism of gallium oxide microstructures is discussed. These gallium oxide microstructures have great potential in functional devices.

Keywords: catalyst-free, gallium oxide, microstructures, thermal oxide

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1390 Nitrite Sensor Platform Functionalized Reduced Graphene Oxide with Thionine Dye Based

Authors: Nurulasma Zainudin, Mashitah Mohd Yusoff, Kwok Feng Chong

Abstract:

Functionalized reduced graphene oxide is essential importance for their end applications. Chemical functionalization of reduced graphene oxide with strange atoms is a leading strategy to modify the properties of the materials moreover maintains the inherent properties of reduced graphene oxide. A thionine functionalized reduce graphene oxide electrode was fabricated and was used to electrochemically determine nitrite. The electrochemical behaviour of thionine functionalized reduced graphene oxide towards oxidation of nitrite via cyclic voltammetry was studied and the proposed method exhibited enhanced electrocatalytic behaviour.

Keywords: nitrite, sensor, thionine, reduced graphene oxide

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1389 Transparent and Solution Processable Low Contact Resistance SWCNT/AZONP Bilayer Electrodes for Sol-Gel Metal Oxide Thin Film Transistor

Authors: Su Jeong Lee, Tae Il Lee, Jung Han Kim, Chul-Hong Kim, Gee Sung Chae, Jae-Min Myoung

Abstract:

The contact resistance between source/drain electrodes and semiconductor layer is an important parameter affecting electron transporting performance in the thin film transistor (TFT). In this work, we introduced a transparent and the solution prossable single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle (AZO NP) bilayer electrodes showing low contact resistance with indium-oxide (In2O3) sol gel thin film. By inserting low work function AZO NPs into the interface between the SWCNTs and the In2O3 which has a high energy barrier, we could obtain an electrical Ohmic contact between them. Finally, with the SWCNT-AZO NP bilayer electrodes, we successfully fabricated a TFT showing a field effect mobility of 5.38 cm2/V∙s at 250 °C.

Keywords: single-walled carbon nanotube (SWCNT), Al-doped ZnO (AZO) nanoparticle, contact resistance, thin-film transistor (TFT)

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1388 Characterization Techniques for Studying Properties of Nanomaterials

Authors: Nandini Sharma

Abstract:

Monitoring the characteristics of a nanostructured material comprises measurements of structural, morphological, mechanical, optical and electronic properties of the synthesized nanopowder and different layers and coatings of nanomaterials coated on transparent conducting oxides (TCOs) substrates like fluorine doped tin oxide (FTO) or Indium doped tin oxide (ITO). This article focuses on structural and optical characterization with emphasis on measurements of the photocatalytic efficiency as a photocatalyst and their interpretation to extract relevant information about various TCOs and materials, their emitter regions, and surface passivation. It also covers a brief description of techniques based on photoluminescence that can portray high resolution pictorial graphs for application as solar energy devices. With the advancement in the scientific techniques, detailed information about the structural, morphological, and optical properties can be investigated, which is further useful for engineering and designing of an efficient device. The common principles involved in the prevalent characterization techniques aid to illustrate the range of options that can be broadened in near future for acurate device characterization and diagnosis.

Keywords: characterization, structural, optical, nanomaterial

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1387 Facile Fabrication of Nickel/Zinc Oxide Hollow Spheres Nanostructure and Photodegradation of Congo Red

Authors: Seyed Mohsen Mousavi, Ali Reza Mahjoub, Behjat Afshari

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In this work, Nickel/Zinc Oxide hollow spherical structures with high surface area using the template Fructose was prepared by the hydrothermal method using a ultrasonic bath at room temperature was produced and were identified by FTIR, XRD, FE-SEM. The photocatalytic activity of synthesized hollow spherical Nickel/Zinc Oxide was studied in the destruction of Congo red as Azo dye. The results showed that the photocatalytic activity of Nickel/ Zinc Oxide hollow spherical nanostructures is improved compared with zinc oxide hollow sphere and other morphologies.

Keywords: azo dye, hollow spheres, photocatalyst, nickel/zinc oxide

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1386 Covalent Functionalization of Graphene Oxide with Aliphatic Polyisocyanate

Authors: E. Changizi, E. Ghasemi, B. Ramezanzadeh, M. Mahdavian

Abstract:

In this study, the graphene oxide was functionalized with polyisocyanate (piGO). The functionalization was carried out at 45⁰C for 24 hrs under nitrogen atmosphere. The X-ray diffraction (XRD), scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FT-IR) and thermal gravimetric analysis (TGA) were utilized in order to evaluate the GO functionalization. The GO and piGO stability were then investigated in polar and nonpolar solvents. Results obtained showed that polyisocyanate was successfully grafted on the surface of graphen oxide sheets through covalent bonds formation. The surface nature of the graphen oxide was changed into the hydrophobic after functionalization. Moreover, the graphen oxide sheets interlayer distance increased after modification.

Keywords: graphen oxide, functionalization, polyisocyanate, XRD, TGA, FTIR

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1385 Elaboration and Characterization of MEH-PPV/PCBM Composite Film Doped with TiO2 Nanoparticles for Photovoltaic Application

Authors: Wided Zerguine, Farid Habelhames

Abstract:

The performance of photovoltaic devices with a light absorber consisting of a single-type conjugated polymer is poor, due to a low photo-generation yield of charge carriers, strong radiative recombination’s and low mobility of charge carriers. Recently, it has been shown that ultra-fast photoinduced charge transfer can also occur between a conjugated polymer and a metal oxide semiconductor such as SnO2, TiO2, ZnO, Nb2O5, etc. This has led to the fabrication of photovoltaic devices based on composites of oxide semiconductor nanoparticles embedded in a conjugated polymer matrix. In this work, Poly [2-methoxy-5-(20-ethylhexyloxy)-p-phenylenevinylene] (MEH-PPV), (6,6)-phenyl-C61-butyric acid methyl ester (PCBM) and titanium dioxide (TiO2) nanoparticles (n-type) were dissolved, mixed and deposited by physical methods (spin-coating) on indium tin-oxide (ITO) substrate. The incorporation of the titanium dioxide nanoparticles changed the morphology and increased the roughness of polymers film (MEH-PPV/PCBM), and the photocurrent density of the composite (MEH-PPV/PCBM +n-TiO2) was higher than that of single MEHPPV/ PCBM film. The study showed that the presence of n-TiO2 particles in the polymeric film improves the photoelectrochemical properties of MEH-PPV/PCBM composite.

Keywords: photocurrent density, organic nanostructures, hybrid coating, conducting polymer, titanium dioxide

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1384 Key Roles of the N-Type Oxide Layer in Hybrid Perovskite Solar Cells

Authors: Thierry Pauporté

Abstract:

Wide bandgap n-type oxide layers (TiO2, SnO2, ZnO etc.) play key roles in perovskite solar cells. They act as electron transport layers, and they permit the charge separation. They are also the substrate for the preparation of perovskite in the direct architecture. Therefore, they have a strong influence on the perovskite loading, its crystallinity and they can induce a degradation phenomenon upon annealing. The interface between the oxide and the perovskite is important, and the quality of this heterointerface must be optimized to limit the recombination of charges phenomena and performance losses. One can also play on the oxide and use two oxide contact layers for improving the device stability and durability. These aspects will be developed and illustrated on the basis of recent results obtained at Chimie-ParisTech.

Keywords: oxide, hybrid perovskite, solar cells, impedance

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1383 Removal of Nickel and Zinc Ions from Aqueous Solution by Graphene Oxide and Graphene Oxide Functionalized Glycine

Authors: M. Rajabi, O. Moradi

Abstract:

In this study, removal of Nickel and Zinc by graphene oxide and functionalized graphene oxide–gelaycin surfaces was examined. Amino group was added to surface of graphene oxide to produced functionalized graphene oxide–gelaycin. Effect of contact time and initial concentration of Ni (II) and Zn(II) ions were studied. Results showed that with increase of initial concentration of Ni (II) and Zn(II) adsorption capacity was increased. After 50 min has not a large change at adsorption capacity therefore, 50 min was selected as optimaze time. Scanning electron microscope (SEM) and fourier transform infrared (FT-IR) spectroscopy spectra used for the analysis confirmed the successful fictionalization of the Graphene oxide surface. Adsorption experiments of Ni (II) and Zn(II) ions graphene oxide and functionalized graphene oxide–gelaycin surfaces fixed at 298 K and pH=6. The Pseudo Firs-order and the Pseudo Second-order (types I, II, III and IV) kinetic models were tested for adsorption process and results showed that the kinetic parameters best fits with to type (I) of pseudo-second-order model because presented low X2 values and also high R2 values.

Keywords: graphene oxide, gelaycin, nickel, zinc, adsorption, kinetic, graphene oxide, gelaycin, nickel, zinc, adsorption, kinetic

Procedia PDF Downloads 279
1382 Delamination of Scale in a Fe Carbon Steel Surface by Effect of Interface Roughness and Oxide Scale Thickness

Authors: J. M. Lee, W. R. Noh, C. Y. Kim, M. G. Lee

Abstract:

Delamination of oxide scale has been often discovered at the interface between Fe carbon steel and oxide scale. Among several mechanisms of this delamination behavior, the normal tensile stress to the substrate-scale interface has been described as one of the main factors. The stress distribution at the interface is also known to be affected by thermal expansion mismatch between substrate and oxide scale, creep behavior during cooling and the geometry of the interface. In this study, stress states near the interface in a Fe carbon steel with oxide scale have been investigated using FE simulations. The thermal and mechanical properties of oxide scales are indicated in literature and Fe carbon steel is measured using tensile testing machine. In particular, the normal and shear stress components developed at the interface during bending are investigated. Preliminary numerical sensitivity analyses are provided to explain the effects of the interface geometry and oxide thickness on the delamination behavior.

Keywords: oxide scale, delamination, Fe analysis, roughness, thickness, stress state

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1381 Fabrication of Tin Oxide and Metal Doped Tin Oxide for Gas Sensor Application

Authors: Goban Kumar Panneer Selvam

Abstract:

In past years, there is lots of death caused due to harmful gases. So its very important to monitor harmful gases for human safety, and semiconductor material play important role in producing effective gas sensors.A novel solvothermal synthesis method based on sol-gel processing was prepared to deposit tin oxide thin films on glass substrate at high temperature for gas sensing application. The structure and morphology of tin oxide were analyzed by X-ray diffraction (XRD), Fourier transforms infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The SEM analysis of how spheres shape in tin oxide nanoparticles. The structure characterization of tin oxide studied by X-ray diffraction shows 8.95 nm (calculated by sheers equation). The UV visible spectroscopy indicated a maximum absorption band shown at 390 nm. Further dope tin oxide with selected metals to attain maximum sensitivity using dip coating technique with different immersion and sensing characterization are measured.

Keywords: tin oxide, gas sensor, chlorine free, sensitivity, crystalline size

Procedia PDF Downloads 101