Search results for: effects of Sn doping on electrical conductivity
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 12671

Search results for: effects of Sn doping on electrical conductivity

12671 Effect of Manganese Doping Percentage on Optical Band Gap and Conductivity of Copper Sulphide Nano-Films Prepared by Electrodeposition Method

Authors: P. C. Okafor, A. J. Ekpunobi

Abstract:

Mn doped copper sulphide (CuS:Mn) nano-films were deposited on indiums coated tin oxide (ITO) glass substrates using electrodeposition method. Electrodeposition was carried out using bath of PH = 3 at room temperature. Other depositions parameters such as deposition time (DT) are kept constant while Mn doping was varied from 3% to 23%. Absorption spectra of CuS:Mn films was obtained by using JENWAY 6405 UV-VIS -spectrophotometer. Optical band gap (E_g ), optical conductivity (σo) and electrical conductivity (σe) of CuS:Mn films were determined using absorption spectra and appropriate formula. The effect of Mn doping % on these properties were investigated. Results show that film thickness (t) for the 13.27 nm to 18.49 nm; absorption coefficient (α) from 0.90 x 1011 to 1.50 x 1011 optical band gap from 2.29eV to 2.35 eV; optical conductivity from 1.70 x 1013 and electrical conductivity from 160 millions to 154 millions. Possible applications of such films for solar cells fabrication and optoelectronic devices applications were also discussed.

Keywords: copper sulphide (CuS), Manganese (Mn) doping, electrodeposition, optical band gap, optical conductivity, electrical conductivity

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12670 Thermoelectrical Properties of Cs Doped BiCuSeO as Promising Oxide Materials for Thermoelectric Energy Converter

Authors: Abdenour Achour, Kan Chen, Mike Reece, Zhaorong Huang

Abstract:

Here we report the synthesis of pure and cost effective of BiCuSeO by a flux method in air, and the enhancement of the thermoelectric performance by Cs doping. The comparison between our synthesis and the usual vacuum furnace method has been studied for the pristine oxyselenides BiCuSeO. We report for very high Seebeck coefficients up to 516 μV K⁻¹ at room temperature with the electrical conductivity of 5.20 S cm⁻¹ which lead to a high power factor of 140 µWm⁻¹K⁻². We also report at the high temperatures the lowest thermal conductivity value of 0.42 µWm⁻¹K⁻¹. Upon doping with Cs, enhanced electrical conductivity coupled with a moderate Seebeck coefficient lead to a power factor of 338 µWm⁻¹K⁻² at 682 K. Moreover, it shows a very low thermal conductivity in the temperature range of 300 to 682 K (0.75 to 0.35 Wm⁻¹K⁻¹). By optimizing the power factor and reducing the thermal conductivity, this results in a high ZT of ~ 0.66 at 682 K for Bi0.995Cs0.005CuSeO.

Keywords: BiCuSeO, Cs doping, thermoelectric, oxyselenide

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12669 Designing of Nano-materials for Waste Heat Conversion into Electrical Energy Thermoelectric generator

Authors: Wiqar Hussain Shah

Abstract:

The electrical and thermal properties of the doped Tellurium Telluride (Tl10Te6) chalcogenide nano-particles are mainly characterized by a competition between metallic (hole doped concentration) and semi-conducting state. We have studied the effects of Sn doping on the electrical and thermoelectric properties of Tl10-xSnxTe6 (1.00 ≤x≤ 2.00), nano-particles, prepared by solid state reactions in sealed silica tubes and ball milling method. Structurally, all these compounds were found to be phase pure as confirmed by the x-rays diffractometery (XRD) and energy dispersive X-ray spectroscopy (EDS) analysis. Additionally crystal structure data were used to model the data and support the findings. The particles size was calculated from the XRD data by Scherrer’s formula. The EDS was used for an elemental analysis of the sample and declares the percentage of elements present in the system. The thermo-power or Seebeck co-efficient (S) was measured for all these compounds which show that S increases with increasing temperature from 295 to 550 K. The Seebeck coefficient is positive for the whole temperature range, showing p-type semiconductor characteristics. The electrical conductivity was investigated by four probe resistivity techniques revealed that the electrical conductivity decreases with increasing temperature, and also simultaneously with increasing Sn concentration. While for Seebeck coefficient the trend is opposite which is increases with increasing temperature. These increasing behavior of Seebeck coefficient leads to high power factor which are increases with increasing temperature and Sn concentration except For Tl8Sn2Te6 because of lowest electrical conductivity but its power factor increases well with increasing temperature.

Keywords: Sn doping in Tellurium Telluride nano-materials, electron holes competition, Seebeck co-efficient, effects of Sn doping on Electrical conductivity, effects on Power factor

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12668 Understanding the Impact of Li- bis(trifluoromethanesulfonyl)imide Doping on Spiro-OMeTAD Properties and Perovskite Solar Cell Performance

Authors: Martin C. Eze, Gao Min

Abstract:

Lithium bis(trifluoromethanesulfonyl)imide (Li-TFSI) dopant is beneficial in improving the properties of 2,2′,7,7′-Tetrakis (N, N-di-p-methoxyphenylamino)-9,9′-spiro-bifluorene (Spiro-OMETAD) transport layer used in perovskite solar cells (PSCs). Properties such as electrical conductivity, band energy mismatch, and refractive index of Spiro-OMETAD layers are believed to play key roles in PSCs performance but only the dependence of electrical conductivity on Li-TFSI doping has been extensively studied. In this work, the effect of Li-TFSI doping level on highest occupied molecular orbital (HOMO) energy, electrical conductivity, and refractive index of Spiro-OMETAD film and PSC performance was demonstrated. The Spiro-OMETAD films were spin-coated at 4000 rpm for 30 seconds from solutions containing 73.4 mM of Spiro-OMeTAD, 23.6 mM of 4-tert-butylpyridine, 7.6 mM of tris(2-(1H-pyrazol-1-yl)-4-tert-butylpyridine) cobalt(III) tri[bis(trifluoromethane) sulfonimide] (FK209) dopant and Li-TFSI dopant varying from 37 to 62 mM in 1 ml of chlorobenzene. From ultraviolet photoelectron spectroscopy (UPS), ellipsometry, and 4-probe studies, the results show that films deposition from Spiro-OMETAD solution doped with 40 mM of Li-TFSI shows the highest electrical conductivity of 6.35×10-6 S/cm, the refractive index of 1.87 at 632.32 nm, HOMO energy of -5.22 eV and the lowest HOMO energy mismatch of 0.21 eV compared to HOMO energy of perovskite layer. The PSCs fabricated show the best power conversion efficiency, open-circuit voltage, and fill factor of 17.10 %, 1.1 V, and 70.12%, respectively, for devices based on Spiro-OMETAD solution doped with 40 mM of Li-TFSI. This study demonstrates that the optimum Spiro-OMETAD/ Li-TFSI doping ratio of 1.84 is the optimum doping level for Spiro-OMETAD layer preparation.

Keywords: electrical conductivity, homo energy mismatch, lithium bis(trifluoromethanesulfonyl)imide, power conversion efficiency, refractive index

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12667 Realization and Characterizations of Conducting Ceramics Based on ZnO Doped by TiO₂, Al₂O₃ and MgO

Authors: Qianying Sun, Abdelhadi Kassiba, Guorong Li

Abstract:

ZnO with wurtzite structure is a well-known semiconducting oxide (SCO), being applied in thermoelectric devices, varistors, gas sensors, transparent electrodes, solar cells, liquid crystal displays, piezoelectric and electro-optical devices. Intrinsically, ZnO is weakly n-type SCO due to native defects (Znⱼ, Vₒ). However, the substitutional doping by metallic elements as (Al, Ti) gives rise to a high n-type conductivity ensured by donor centers. Under CO+N₂ sintering atmosphere, Schottky barriers of ZnO ceramics will be suppressed by lowering the concentration of acceptors at grain boundaries and then inducing a large increase in the Hall mobility, thereby increasing the conductivity. The presented work concerns ZnO based ceramics, which are fabricated with doping by TiO₂ (0.50mol%), Al₂O₃ (0.25mol%) and MgO (1.00mol%) and sintering in different atmospheres (Air (A), N₂ (N), CO+N₂(C)). We obtained uniform, dense ceramics with ZnO as the main phase and Zn₂TiO₄ spinel as a secondary and minor phase. An important increase of the conductivity was shown for the samples A, N, and C which were sintered under different atmospheres. The highest conductivity (σ = 1.52×10⁵ S·m⁻¹) was obtained under the reducing atmosphere (CO). The role of doping was investigated with the aim to identify the local environment and valence states of the doping elements. Thus, Electron paramagnetic spectroscopy (EPR) determines the concentration of defects and the effects of charge carriers in ZnO ceramics as a function of the sintering atmospheres. The relation between conductivity and defects concentration shows the opposite behavior between these parameters suggesting that defects act as traps for charge carriers. For Al ions, nuclear magnetic resonance (NMR) technique was used to identify the involved local coordination of these ions. Beyond the six and forth coordinated Al, an additional NMR signature of ZnO based TCO requires analysis taking into account the grain boundaries and the conductivity through the Knight shift effects. From the thermal evolution of the conductivity as a function of the sintering atmosphere, we succeed in defining the conditions to realize ZnO based TCO ceramics with an important thermal coefficient of resistance (TCR) which is promising for electrical safety of devices.

Keywords: ceramics, conductivity, defects, TCO, ZnO

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12666 Investigating the Influence of Potassium Ion Doping on Lithium-Ion Battery Performance

Authors: Liyew Yizengaw Yitayih

Abstract:

This nanotechnology study focuses on how potassium ions (K+) affect lithium-ion (Li-ion) battery performance. By adding potassium ions (K+) to the lithium tin oxide (LiSnO) anode and employing styrene-butadiene rubber (SBR) as a binder, the doping of K+ was specifically studied. The methods employed in this study include computer modeling and simulation, material fabrication, and electrochemical characterization. The potassium ions (Li+) were successfully doped into the LiSnO lattice during charge/discharge cycles, which increased the lithium-ion diffusivity and electrical conductivity within the anode. However, it was found that internal doping of potassium ions (K+) into the LiSnO lattice occurred at high potassium ion concentrations (>16.6%), which hampered lithium ion transfer because of repulsion and physical blockage. The electrochemical efficiency of lithium-ion batteries was improved by this comprehensive study's presentation of potassium ions' (K+) potential advantages when present in the appropriate concentrations in electrode materials.

Keywords: lithium-ion battery, LiSnO anode, potassium doping, lithium-ion diffusivity, electronic conductivity

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12665 Effects of Copper and Cobalt Co-Doping on Structural, Optical and Electrical Properties of Tio2 Thin Films Prepared by Sol Gel Method

Authors: Rabah Bensaha, Badreeddine Toubal

Abstract:

Un-doped TiO2, Co single doped TiO2 and (Cu-Co) co-doped TiO2 thin films have been growth on silicon substrates by the sol-gel dip coating technique. We mainly investigated both effects of the dopants and annealing temperature on the structural, optical and electrical properties of TiO2 films using X-ray diffraction (XRD), Raman and FTIR spectroscopy, Atomic force microscopy (AFM), Scanning electron microscopy (SEM), UV–Vis spectroscopy. The chemical compositions of Co-doped and (Cu-Co) co-doped TiO2 films were confirmed by XRD, Raman and FTIR studies. The average grain sizes of CoTiO3-TiO2 nanocomposites were increased with annealing temperature. AFM and SEM reveal a completely the various nanostructures of CoTiO3-TiO2 nanocomposites thin films. The films exhibit a high optical reflectance with a large band gap. The highest electrical conductivity was obtained for the (Cu-Co) co-doped TiO2 films. The polyhedral surface morphology might possibly improve the surface contact between particle sizes and then contribute to better electron mobility as well as conductivity. The obtained results suggest that the prepared TiO2 films can be used for optoelectronic applications.

Keywords: sol-gel, TiO2 thin films, CoTiO3-TiO2 nanocomposites films, Electrical conductivity

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12664 Iron(III)-Tosylate Doped PEDOT and PEG: A Nanoscale Conductivity Study of an Electrochemical System with Biosensing Applications

Authors: Giulio Rosati, Luciano Sappia, Rossana Madrid, Noemi Rozlòsnik

Abstract:

The addition of PEG of different molecular weights has important effects on the physical, electrical and electrochemical properties of iron(III)-tosylate doped PEDOT. This particular polymer can be easily spin coated over plastic discs, optimizing thickness and uniformity of the PEDOT-PEG films. The conductivity and morphological analysis of the hybrid PEDOT-PEG polymer by 4-point probe (4PP), 12-point probe (12PP), and conductive AFM (C-AFM) show strong effects of the PEG doping. Moreover, the conductive films kinetics at the nanoscale, in response to different bias voltages, change radically depending on the PEG molecular weight. The hybrid conductive films show also interesting electrochemical properties, making the PEDOT PEG doping appealing for biosensing applications both for EIS-based and amperometric affinity/catalytic biosensors.

Keywords: atomic force microscopy, biosensors, four-point probe, nano-films, PEDOT

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12663 Thermoelectric Properties of Spark Plasma Sintered Te Doped Cu₃SbSe₄: Promising Thermoelectric Material

Authors: Kriti Tyagi, Bhasker Gahtori

Abstract:

Various groups have attempted on enhancing the thermoelectric figure-of-merit (ZT) of the Cu₃SbSe₄ compound by employing doping process. Efforts are made to study the thermoelectric performance of Cu₃SbSe₄ material doped with Te in different compositions (i. e. Cu₃Sb₁₋ₓTeₓSe₄, x = 0.005, 0.01, 0.015, 0.02). The different doping concentration has been selected to identify the suitable doping to increase the thermoelectric performance. Compared to pristine Cu₃SbSe₄, an enhancement of thermoelectric figure-of-merit was achieved for 0.005 Te doped Cu₃SbSe₄. This improvement can be attributed to the reduction of thermal conductivity for 0.005 Te doped Cu₃SbSe₄.

Keywords: figure-of-merit, polycrystalline, thermal conductivity, thermoelectric

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12662 Thermoelectric Properties of Doped Polycrystalline Silicon Film

Authors: Li Long, Thomas Ortlepp

Abstract:

The transport properties of carriers in polycrystalline silicon film affect the performance of polycrystalline silicon-based devices. They depend strongly on the grain structure, grain boundary trap properties and doping concentration, which in turn are determined by the film deposition and processing conditions. Based on the properties of charge carriers, phonons, grain boundaries and their interactions, the thermoelectric properties of polycrystalline silicon are analyzed with the relaxation time approximation of the Boltz- mann transport equation. With this approach, thermal conductivity, electrical conductivity and Seebeck coefficient as a function of grain size, trap properties and doping concentration can be determined. Experiment on heavily doped polycrystalline silicon is carried out and measurement results are compared with the model.

Keywords: conductivity, polycrystalline silicon, relaxation time approximation, Seebeck coefficient, thermoelectric property

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12661 Research of the Activation Energy of Conductivity in P-I-N SiC Structures Fabricated by Doping with Aluminum Using the Low-Temperature Diffusion Method

Authors: Ilkham Gafurovich Atabaev, Khimmatali Nomozovich Juraev

Abstract:

The activation energy of conductivity in p-i-n SiC structures fabricated by doping with Aluminum using the new low-temperature diffusion method is investigated. In this method, diffusion is stimulated by the flux of carbon and silicon vacancies created by surface oxidation. The activation energy of conductivity in the p - layer is 0.25 eV and it is close to the ionization energy of Aluminum in 4H-SiC from 0.21 to 0.27 eV for the hexagonal and cubic positions of aluminum in the silicon sublattice for weakly doped crystals. The conductivity of the i-layer (measured in the reverse biased diode) shows 2 activation energies: 0.02 eV and 0.62 eV. Apparently, the 0.62 eV level is a deep trap level and it is a complex of Aluminum with a vacancy. According to the published data, an analogous level system (with activation energies of 0.05, 0.07, 0.09 and 0.67 eV) was observed in the ion Aluminum doped 4H-SiC samples.

Keywords: activation energy, aluminum, low temperature diffusion, SiC

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12660 Experimental Study of the Electrical Conductivity and Thermal Conductivity Property of Micro-based Al-Cu-Nb-Mo Alloy

Authors: Uwa C. A., Jamiru T.

Abstract:

Aluminum based alloys with a certain compositional blend and manufacturing method have been reported to have excellent electrical conductors. In the current investigation, metal powders of Aluminum (Al), Copper (Cu), Niobium (Nb), and Molybdenum (Mo) were weighed in accordance with certain ratios and spread equally by combining the powder particles. The metal particles were mixed using a tube mixer for 12 hours. Before pouring into a 30mm-diameter graphite mold, pre-pressed, and placed into an SPS furnace, the thermal conductivity of the mixed metal powders was evaluated using a portable Thermtest device. Axial pressure of 50 MPa was used at a heating rate of 50 oC/min, and a multi-stage heating procedure with a holding period of 10 min. was used to sinter at temperatures between 300 oC and 480 oC. After being cooled to room temperature, the specimens were unmolded to produce the aluminum, copper, niobium, and molybdenum alloy material. The HPS 2662 Precision Four-point Probe Meter was used to determine the electrical resistivity and the values used to calculate the electrical conductivity of the sintered alloy samples. Finally, the alloy with the highest electrical conductivity and thermal conductivity qualities was the one with the following composition: Al 93.5Cu4Nb1.5Mo1. It also had a density of 3.23 g/cm3. It could be advisable for usage in automobile radiator and electric transmission line components.

Keywords: Al-Cu-Nb-Mo, electrical conductivity, alloy, sintering, thermal conductivity

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12659 Indium Oxide/Scandium Doping Yttria-Stabilized Zirconia Composite Films as Electrolytes for Solid Oxide Fuel Cells

Authors: Yong-Jie Lin, Yi-Feng Lin

Abstract:

In this study, scandium-doped yttria-stabilized zirconia (ScYSZ) and In2O3 nanoparticles (NPs) with cubic crystalline structures were successfully prepared using a facile hydrothermal process. ScYSZ films were prepared by the pressing of ScYSZ NPs and were further used for the electrolyte of solid oxide fuel cells (SOFCs). To increase the ionic conductivity of the ScYSZ electrolyte, different amounts of In2O3 NPs [0 wt% (X(In2O3)=0), 0.21 wt% (X(In2O3)=0.001) and 1.13 wt% (X(In2O3)=0.005)] were doped in the ScYSZ films to increase their oxygen vacancy. The result shows In2O3 NP/ScYSZ films with 1.13 wt% (X(In2O3 )=0.005) In2O3 NPs doping are with largest ionic conductivity of 0.057Ω-1 cm-1 at 900oC, which is 1.6 and 1.8 times higher than YSZ and In2O3 NP/ScYSZ films with 0.21 wt% (X(In2O3)=0.001) In2O3 NPs doping, respectively.

Keywords: indium oxide/scandium doping Yttria-stabilized zirconia, solid oxide fuel cells, scandium-doped yttria-stabilized zirconia, indium oxide

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12658 Determining a Suitable Time and Temperature Combination for Electricial Conductivity Test in Sorghum

Authors: Mehmet Demir Kaya, Onur İleri, Süleyman Avcı

Abstract:

This study was conducted to determine a suitable time and temperature combination for the electrical conductivity test to be used in sorghum seeds. Fifty seeds known initial seed moisture content and weight of fresh and dead seeds (105°C for 6h) of seven sorghum cultivars were used as material. The electrical conductivities of soak water were measured using EC meter at 20, 25 and 30°C for 4, 8, 12 and 24 h using 50 mL deionized water. The experimental design was three factors factorial (7 × 3 × 4) arranged in a completely randomized design; with four replications and 50 seeds per replicate. The results showed that increased time and temperature caused a remarkable increase in EC values of all of the cultivars. Temperature significantly affected the electrical conductivity values and the best results were obtained at 25°C. The cultivars having the lowest germination percentage gave the highest electrical conductivity value. Dead seeds always gave higher electrical conductivity at 25°C for all periods. It was concluded that the temperature of 25°C and higher period than 12 h was the optimum combination for the electrical conductivity test in sorghum.

Keywords: Sorghum bicolor, seed vigor, cultivar, temperature

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12657 An Investigation on Viscoelastic and Electrical Properties of Biopolymer-Based Composites

Authors: K. Sever, Y. Seki, Z. Yenier, İ. Şen, M. Sarikanat

Abstract:

It is known that Chitosan, as a natural polymer, has many excellent properties such as bicompotability, biodegradability and nontoxicity. Besides it has some limitations such as poor solubility in water and low conductivity in electrical devices and sensor applications. In order to improve electrical conductivity properties grapheme loading was conducted into chitosan. For this aim, chitosan solution was prepared in acidic condition and Graphene at different ratios was mixed with chitosan solution by the help of homogenizator. After film formation electrical conductivity values of chitosan and graphene loaded chitosan were determined. After grapheme loading into chitosan,solution significant increases in surface resistivity value of chitosan were observed. Besides variations on viscoeleastic properties with graphene loading was determined by dynamic mechanical analysis. Storage and Loss moduli were obtained for chitosan and grapheme loaded chitosan samples.

Keywords: chitosan, graphene, viscoelastic properties, electrical conductivity

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12656 Ethical Aspects of the Anti-Doping System Management in Poland and in Global Framework

Authors: Malgorzata Kurleto

Abstract:

This study is trying to analyse the organization of the anti-doping system globally (particularly in Poland). The analysis is going to show the concept of doping, indicating the types of doping, and list of banned substances and methods. The paper discusses ethical aspects of the global anti-doping system. The analysis is focusing on organization of global Anti-Doping Agency. The paper will try to describe the basic assumptions of regulations adopted by WADA, called "standards” as well organization and functioning of the Polish Anti-Doping Agency (including the legal basis: POLADA). The base for this discuss will be the Polish 2018 annual report, which shows the most important assumptions, implementation and the number of anti-doping proceedings conducted in Poland. The aim of this paper is to show ethical arguments on anti-doping management strategies.

Keywords: anti-doping, ethical dilemmas, sports doping, WADA, POLADA

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12655 Structural, Magnetic, Dielectric and Electrical Properties of Gd3+ Doped Cobalt Ferrite Nanoparticles

Authors: Raghvendra Singh Yadav, Ivo Kuřitka, Jarmila Vilcakova, Jaromir Havlica, Lukas Kalina, Pavel Urbánek, Michal Machovsky, Milan Masař, Martin Holek

Abstract:

In this work, CoFe₂₋ₓGdₓO₄ (x=0.00, 0.05, 0.10, 0.15, 0.20) spinel ferrite nanoparticles are synthesized by sonochemical method. The structural properties and cation distribution are investigated using X-ray Diffraction (XRD), Raman Spectroscopy, Fourier Transform Infrared Spectroscopy and X-ray photoelectron spectroscopy. The morphology and elemental analysis are screened using field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy, respectively. The particle size measured by FE-SEM and XRD analysis confirm the formation of nanoparticles in the range of 7-10 nm. The electrical properties show that the Gd³⁺ doped cobalt ferrite (CoFe₂₋ₓGdₓO₄; x= 0.20) exhibit enhanced dielectric constant (277 at 100 Hz) and ac conductivity (20.17 x 10⁻⁹ S/cm at 100 Hz). The complex impedance measurement study reveals that as Gd³⁺ doping concentration increases, the impedance Z’ and Z’ ’ decreases. The influence of Gd³⁺ doping in cobalt ferrite nanoparticles on the magnetic property is examined by using vibrating sample magnetometer. Magnetic property measurement reveal that the coercivity decreases with Gd³⁺ substitution from 234.32 Oe (x=0.00) to 12.60 Oe (x=0.05) and further increases from 12.60 Oe (x=0.05) to 68.62 Oe (x=0.20). The saturation magnetization decreases with Gd³⁺ substitution from 40.19 emu/g (x=0.00) to 21.58 emu/g (x=0.20). This decrease follows the three-sublattice model suggested by Yafet-Kittel (Y-K). The Y-K angle increases with the increase of Gd³⁺ doping in cobalt ferrite nanoparticles.

Keywords: sonochemical method, nanoparticles, magnetic property, dielectric property, electrical property

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12654 Nitrogen-Doped Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Prepared by Coaxial Arc Plasma Deposition

Authors: Abdelrahman Zkria, Tsuyoshi Yoshitake

Abstract:

Diamond is one of the most interesting semiconducting carbon materials owing to its unique physical and chemical properties, yet its application in electronic devices is limited due to the difficulty of realizing n-type conduction by nitrogen doping. In contrast Ultrananocrystalline diamond with diamond grains of about 3–5 nm in diameter have attracted much attention for device-oriented applications because they may enable the realization of n-type doping with nitrogen. In this study, nitrogen-doped Ultra-Nanocrystalline diamond films were prepared by coaxial arc plasma deposition (CAPD) method, the nitrogen content was estimated by X-ray photoemission spectroscopy (XPS). The electrical conductivity increased with increasing nitrogen contents. Heterojunction diodes with p-type Si were fabricated and evaluated based on current–voltage (I–V) and capacitance–voltage (C–V) characteristics measured in dark at room temperature.

Keywords: heterojunction diodes, hopping conduction mechanism, nitrogen-doping, ultra-nanocrystalline diamond

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12653 On the PTC Thermistor Model with a Hyperbolic Tangent Electrical Conductivity

Authors: M. O. Durojaye, J. T. Agee

Abstract:

This paper is on the one-dimensional, positive temperature coefficient (PTC) thermistor model with a hyperbolic tangent function approximation for the electrical conductivity. The method of asymptotic expansion was adopted to obtain the steady state solution and the unsteady-state response was obtained using the method of lines (MOL) which is a well-established numerical technique. The approach is to reduce the partial differential equation to a vector system of ordinary differential equations and solve numerically. Our analysis shows that the hyperbolic tangent approximation introduced is well suitable for the electrical conductivity. Numerical solutions obtained also exhibit correct physical characteristics of the thermistor and are in good agreement with the exact steady state solutions.

Keywords: electrical conductivity, hyperbolic tangent function, PTC thermistor, method of lines

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12652 Electrical Characterization of Hg/n-bulk GaN Schottky Diode

Authors: B. Nabil, O. Zahir, R. Abdelaziz

Abstract:

We present the results of electrical characterizations current-voltage and capacity-voltage implementation of a method of making a Schottky diode on bulk gallium nitride doped n. We made temporary Schottky contact of Mercury (Hg) and an ohmic contact of silver (Ag), the electrical characterizations current-voltage (I-V) and capacitance-voltage (C-V) allows us to determine the difference parameters of our structure (Hg /n-GaN) as the barrier height (ΦB), the ideality factor (n), the series resistor (Rs), the voltage distribution (Vd), the doping of the substrate (Nd) and density of interface states (Nss).

Keywords: Bulk Gallium nitride, electrical characterization, Schottky diode, series resistance, substrate doping

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12651 Enhanced Optical and Electrical Properties of P-Type AgBiS₂ Energy Harvesting Materials as an Absorber of Solar Cell by Copper Doping

Authors: Yasaman Tabari-Saadi, Kaiwen Sun, Jialiang Huang, Martin Green, Xiaojing Hao

Abstract:

Optical and electrical properties of p-type AgBiS₂ absorber material have been improved by copper doping on silver sites. X-Ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analysis suggest that complete solid solutions of Ag₁₋ₓCuₓBiS₂ thin film have been formed. The carrier concentration of pure AgBiS₂ thin film deposited by the chemical process is 4.5*E+14 cm⁻³, and copper doping leads to the improved carrier concentration despite the semiconductor AgBiS₂ remains p-type semiconductor. Copper doping directly changed the absorption coefficient and increased the optical band gap (~1.5eV), which makes it a promising absorber for thin-film solar cell applications.

Keywords: copper doped, AgBiS₂, thin-film solar cell, carrier concentration, p-type semiconductor

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12650 Structural and Optoelectronic Properties of Monovalent Cation Doping PbS Thin Films

Authors: Melissa Chavez Portillo, Hector Juarez Santiesteban, Mauricio Pacio Castillo, Oscar Portillo Moreno

Abstract:

Nanocrystalline Li-doped PbS thin films have been deposited by chemical bath deposition technique. The goal of this work is to study the modification of the optoelectronic and structural properties of Lithium incorporation. The increase of Li doping in PbS thin films leads to an increase of band gap in the range of 1.4-2.3, consequently, quantum size effect becomes pronounced in the Li-doped PbS films, which lead to a significant enhancement in the optical band gap. Doping shows influence in the film growth and results in a reduction of crystallite size from 30 to 14 nm. The refractive index was calculated and a relationship with dielectric constant was investigated. The dc conductivities of Li-doped and undoped samples were measured in the temperature range 290-340K, the conductivity increase with increase of Lithium content in the PbS films.

Keywords: doping, quantum confinement, optical band gap, PbS

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12649 High-Performance Li Doped CuO/Reduced Graphene Oxide Flexible Supercapacitor Electrode

Authors: Ruey-Chi Wang, Po-Hsiang Huang, Ping-Chang Chuang, Shu-Jen Chen

Abstract:

High-performance Li: CuO/reduced graphene oxide (RGO) flexible electrodes for supercapacitors were fabricated via a low-temperature and low-cost route. To increase energy density while maintaining high power density and long-term cyclability, Li was doped to increase the electrical conductivity of CuO particles between RGO flakes. Electrochemical measurements show that the electrical conductivity, specific capacitance, energy density, and rate capability were all enhanced by Li incorporation. The optimized Li:CuO/RGO electrodes show a high energy density of 179.9 Wh/kg and a power density of 900.0 W/kg at a current density of 1 A/g. Cyclic life tests show excellent stability over 10,000 cycles with a capacitance retention of 93.2%. Li doping improves the electrochemical performance of CuO, making CuO a promising pseudocapacitive material for fabricating low-cost excellent supercapacitors.

Keywords: supercapacitor, CuO, RGO, lithium

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12648 Estimation of Aquifer Parameters Using Vertical Electrical Sounding in Ochudo City, Abakaliki Urban Nigeria

Authors: Moses. O. Eyankware, Benard I. Odoh, Omoleomo O. Omo-Irabor, Alex O. I. Selemo

Abstract:

Knowledge of hydraulic conductivity and transmissivity is essential for the determination of natural water flow through an aquifer. These parameters are commonly estimated from the analysis of electrical conductivity, soil properties and fluid flow data. In order to achieve a faster and cost effective analysis of aquifer parameters in Ochudo City in Abakaliki, this study relied on non-invasive geophysical methods. As part of this approach, Vertical Electrical Sounding (VES) was conducted at 20 sites in the study area for the identification of the vertical variation in subsurface lithology and for the characterization of the groundwater system. The area variously consists of between five to seven geoelectric layers of different thicknesses. Depth to aquifer ranges from 9.94 m-134.0 m while the thickness of the identified aquifer varies between 8.43 m and 44.31 m. Based on the electrical conductivity values of water samples collected from two boreholes and two hand-dug wells within the study area, the hydraulic conductivity was determined to range from 0.10 to 0.433 m/day. The estimated thickness of the aquifer and calculated hydraulic conductivity were used to derive the aquifer transmissivity. The results indicate that this parameter ranges from 1.58-7.56 m²/day with a formation factor of between 0.31-3.6.

Keywords: Asu river group, transmissivity, hydraulic conductivity, abakaliki, vertical electrical sounding (VES)

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12647 Improving the Electrical Conductivity of Epoxy Coating Using Carbon Nanotube by Electrodeposition Method

Authors: Mahla Zabet, Navid Zanganeh, Hafez Balavi, Farbod Sharif

Abstract:

Electrodeposition is a method for applying coatings with uniform thickness on complex objects. A conductive surface can be produced using the electrical current in this method. Carbon nanotubes are known to have high electrical conductivity and mechanical properties. In this report, NH2-multiwalled carbon nanotubes (MWCNTs) were used in epoxy resin with different weight percent. The weight percent of incorporated MWCNTS into the matrix was changed in the range of 0.6-3.6 wt% to obtain a series of electrocoatings. The electrocoats were then applied on steel substrates by a cathodic electrodeposition technique. Scanning electron microscopy (SEM) and optical microscopy were used to characterize the electrocoated films. The results illustrated the increase in conductivity by increasing of MWCNT load. However, at the percolation threshold, throwing power was dropped with increase in recoating ability.

Keywords: electrodeposition, carbon nanotube, electrical conductivity, throwing power

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12646 Effects of Li2O Doping on Mechanical and Electrical Properties of Bovine Hydroxyapatite Composites (BHA)

Authors: Sibel Daglilar, Isil Kerti, Murat Karagoz, Fatih Dumludag, Oguzhan Gunduz, Faik Nuzhet Oktar

Abstract:

Hydroxyapatite (HA) materials have common use in bone repairing due to its ability to accelerate the bone growth around the implant. In spite of being a biocompatible and bioactive material, HA has a limited usage as an implant material because of its weak mechanical properties. HA based composites are required to improve the strength and toughness properties of the implant materials without compromising of biocompatibility. The excellent mechanical properties and higher biocompatibilities are expected from each of biomedical composites. In this study, HA composites were synthesized by using bovine bone reinforced doped with different amount of (wt.%) Li2O. The pressed pellets were sintered at various sintering temperatures between 1000ºC and 1300°C, and mechanical, electrical properties of the obtained products were characterized. In addition to that, in vitro stimulated body fluid (SBF) tests for these samples were conducted. The most suitable composite composition for biomedical applications was discussed among the composites studied.

Keywords: biocomposites, sintering temperature, biocompatibility, electrical property, conductivity, mechanical property

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12645 Structural, Optical and Electrical Properties of Gd Doped ZnO Thin Films Prepared by a Sol-Gel Method

Authors: S. M. AL-Shomar, N. B. Ibrahim, Sahrim Hj. Ahmad

Abstract:

ZnO thin films with various Gd doping concentration (0, 0.01, 0.03 and 0.05 mol/L) have been synthesized by sol–gel method on quartz substrates at annealing temperature of 600 ºC. X-ray analysis reveals that ZnO(Gd) films have hexagonal wurtzite structure. No peaks that correspond to Gd metal clusters or gadolinium acetylacetonate are detected in the patterns. The position of the main peak (101) shifts to higher angles after doping. The surface morphologies studied using a field emission scanning electron microscope (FESEM) showed that the grain size and the films thickness reduced gradually with the increment of Gd concentration. The roughness of ZnO film investigated by an atomic force microscopy (AFM) showed that the films are smooth and high dense grain. The roughness of doped films decreased from 6.05 to 4.84 rms with the increment of dopant concentration.The optical measurements using a UV-Vis-NIR spectroscopy showed that the Gd doped ZnO thin films have high transmittance (above 80%) in the visible range and the optical band gap increase with doping concentration from 3.13 to 3.39 eV. The doped films show low electrical resistivity 2.6 × 10-3Ω.cm.at high doping concentration.

Keywords: Gd doped ZnO, electric, optics, microstructure

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12644 Preparation, Characterisation and Electrical Properties of Metal/polymer-DNA Nanohybrids

Authors: Mahdi Almaky

Abstract:

Conducting polymer of N-(3-pyrrol-1-yl-propyl)-2,2`-bipyridinium hexafluoro-phosphate (PPBH) was prepared via chemical and electrochemical polymerization methods. The bulk polymer showed conductivity in the order of 10-12 S cm-1. DNA-templated polymer nano wires of PPBH (PolyPPBH-DNA) have been chemically prepared then used as templates to direct the formation of metal nanowires (Cu) in order to enhance the electrical properties of the polymer/DNA wires. The chemical structures, morphology and the electrical characterisation of the as obtained structures have been characterized through spectroscopic (FTIR, UV-vis and XPS), single-crystal X-ray diffraction and microscopic (AFM, EFM and c-AFM) techniques. The morphology of the nanomaterials has been observed by AFM; showing the nanowires are uniform and continuous. The polymer conductivity was slightly improved after metallization. The conductivity of Cu-PolyPPBH-DNA nanowires was estimated to be 7.1x10-2 S cm-1. This conductivity is slightly higher than the conductivity of PolyPPBH-DNA nano wires (2.0 x 10-2 S cm-1), but it is lower than the measurements for PPy/DNA nano wires (2.1 x 10-1 S cm-1) prepared and measured by using c-AFM probe. These results reflect the large effect of the chemical structure (N-substitution) on the electrical properties of these polymers by reducing the extended conjugation.

Keywords: DNA, template, nano wires, N-Alkylatedpyrrole, copper

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12643 First Principle study of Electronic Structure of Silicene Doped with Galium

Authors: Mauludi Ariesto Pamungkas, Wafa Maftuhin

Abstract:

Gallium with three outer electrons commonly are used as dopants of silicon to make it P type and N type semiconductor respectively. Silicene, one-atom-thick silicon layer is one of emerging two dimension materials after the success of graphene. The effects of Gallium doping on electronic structure of silicine are investigated by using first principle calculation based on Density Functional Theory (DFT) calculation and norm conserving pseudopotential method implemented in ABINIT code. Bandstructure of Pristine silicene is similar to that of graphene. Effect of Ga doping on bandstructure of silicene depend on the position of Ga adatom on silicene

Keywords: silicene, effects of Gallium doping, Density Functional Theory (DFT), graphene

Procedia PDF Downloads 396
12642 Microwave Assisted Growth of Varied Phases and Morphologies of Vanadium Oxides Nanostructures: Structural and Optoelectronic Properties

Authors: Issam Derkaoui, Mohammed Khenfouch, Bakang M. Mothudi, Malik Maaza, Izeddine Zorkani, Anouar Jorio

Abstract:

Transition metal oxides nanoparticles with different morphologies have attracted a lot of attention recently owning to their distinctive geometries, and demonstrated promising electrical properties for various applications. In this paper, we discuss the time and annealing effects on the structural and electrical properties of vanadium oxides nanoparticles (VO-NPs) prepared by microwave method. In this sense, transmission electron microscopy (TEM), X-ray diffraction (XRD), Raman Spectroscopy, Ultraviolet-visible absorbance spectra (Uv-Vis) and electrical conductivity were investigated. Hence, the annealing state and the time are two crucial parameters for the improvement of the optoelectronic properties. The use of these nanostructures is promising way for the development of technological applications especially for energy storage devices.

Keywords: Vanadium oxide, Microwave, Electrical conductivity, Optoelectronic properties

Procedia PDF Downloads 155