Search results for: band gap
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 1029

Search results for: band gap

939 An ab initioStudy of the Structural, Elastic, Electronic, and Optical Properties of the Perovskite ScRhO3

Authors: L. Foudia, K. Haddadi, M. Reffas

Abstract:

First principles study of structural, elastic, electronic and optical properties of the monoclinic perovskite type ScRhO₃ has been reported using the pseudo-potential plane wave method within the local density approximation. The calculated lattice parameters, including the lattice constants and angle β, are in excellent agreement with the available experimental data, which proving the reliability of the chosen theoretical approach. Pressure dependence up to 20 GPa of the single crystal and polycrystalline elastic constants has been investigated in details using the strain-stress approach. The mechanical stability, ductility, average elastic wave velocity, Debye temperature and elastic anisotropy were also assessed. Electronic band structure and density of states (DOS) demonstrated its semiconducting nature showing a direct band gap of 1.38 eV. Furthermore, several optical properties, such as absorption coefficient, reflectivity, refractive index, dielectric function, optical conductivity and electron energy loss function, have been calculated for radiation up to 40 eV.

Keywords: ab-initio, perovskite, DFT, band gap

Procedia PDF Downloads 41
938 Trions in Semiconductor Quantum Dot System

Authors: Jayden Leonard, Nguyen Que Huong

Abstract:

In this work, we study the Trion state in a spherical quantum dot of a direct band gap semiconductor with a shell of organic material. The electronic structure of the Trion due to degenerate valence band will be considered. The coupling between the wannier exciton inside the dot and the Frenkel exciton in the shell will make the Trion state become hybrid. The competition between “semiconductor” and “organic” phases of the Trion and the transitions between them depend on Parameters of the system such as the materials, the size of the dot and the thickness of the shell, etc… and could be manipulated using those parameters.

Keywords: trion, exciton, quantum dot, heterostructure

Procedia PDF Downloads 141
937 Compact Dual-band 4-MIMO Antenna Elements for 5G Mobile Applications

Authors: Fayad Ghawbar

Abstract:

The significance of the Multiple Input Multiple Output (MIMO) system in the 5G wireless communication system is essential to enhance channel capacity and provide a high data rate resulting in a need for dual-polarization in vertical and horizontal. Furthermore, size reduction is critical in a MIMO system to deploy more antenna elements requiring a compact, low-profile design. A compact dual-band 4-MIMO antenna system has been presented in this paper with pattern and polarization diversity. The proposed single antenna structure has been designed using two antenna layers with a C shape in the front layer and a partial slot with a U-shaped cut in the ground to enhance isolation. The single antenna is printed on an FR4 dielectric substrate with an overall size of 18 mm×18 mm×1.6 mm. The 4-MIMO antenna elements were printed orthogonally on an FR4 substrate with a size dimension of 36 × 36 × 1.6 mm3 with zero edge-to-edge separation distance. The proposed compact 4-MIMO antenna elements resonate at 3.4-3.6 GHz and 4.8-5 GHz. The s-parameters measurement and simulation results agree, especially in the lower band with a slight frequency shift of the measurement results at the upper band due to fabrication imperfection. The proposed design shows isolation above -15 dB and -22 dB across the 4-MIMO elements. The MIMO diversity performance has been evaluated in terms of efficiency, ECC, DG, TARC, and CCL. The total and radiation efficiency were above 50 % across all parameters in both frequency bands. The ECC values were lower than 0.10, and the DG results were about 9.95 dB in all antenna elements. TARC results exhibited values lower than 0 dB with values lower than -25 dB in all MIMO elements at the dual-bands. Moreover, the channel capacity losses in the MIMO system were depicted using CCL with values lower than 0.4 Bits/s/Hz.

Keywords: compact antennas, MIMO antenna system, 5G communication, dual band, ECC, DG, TARC

Procedia PDF Downloads 113
936 Spin-Polarized Investigation of Ferromagnetism on Magnetic Semiconductors MnxCa1-xS in the Rock-salt Phase

Authors: B. Ghebouli, M. A. Ghebouli, H. Choutri, M. Fatmi, L. Louail

Abstract:

The structural, elastic, electronic and magnetic properties of the diluted magnetic semiconductors MnxCa1-xS in the rock-salt phase have been investigated using first-principles calculations. Features such as lattice constant, bulk modulus, elastic constants, spin-polarized band structure, total and local densities of states have been computed. We predict the values of the exchange constants and the band edge spin splitting of the valence and conduction bands. The hybridization between S-3p and Mn-3d produces small local magnetic moment on the nonmagnetic Ca and S sites. The ferromagnetism is induced due to the exchange splitting of S-3p and Mn-3d hybridized bands. The total magnetic moment per Mn of MnxCa1-xS is 4.4µB and is independent of the Mn concentration. The unfilled Mn -3d levels reduce the local magnetic moment of Mn from its free space charge value of 5µB to 4.4µB due to 3p–3d hybridization.

Keywords: semiconductors, Ab initio calculations, band-structure, magnetic properties

Procedia PDF Downloads 324
935 Theoretical Investigation of the Structural, Electronic, Optical and Elastic Properties of the Perovskite ScRhO₃

Authors: L. Foudia, K. Haddadi, M. Reffas

Abstract:

First principles study of structural, elastic, electronic and optical properties of the monoclinic perovskite type ScRhO₃ has been reported using the pseudo-potential plane wave method within the local density approximation. The calculated lattice parameters, including the lattice constants and angle β are in excellent agreement with the available experimental data, which proving the reliability of the chosen theoretical approach. Pressure dependence up to 20 GPa of the single crystal and polycrystalline elastic constants has been investigated in details using the strain-stress approach. The mechanical stability, ductility, average elastic wave velocity, Debye temperature and elastic anisotropy were also assessed. Electronic band structure and density of states (DOS) demonstrated its semiconducting nature showing a direct band gap of 1.38 eV. Furthermore, several optical properties, such as absorption coefficient, reflectivity, refractive index, dielectric function, optical conductivity and electron energy loss function have been calculated for radiation up to 40 eV.

Keywords: ab-initio, perovskite, DFT, band gap.

Procedia PDF Downloads 39
934 A Compact Ultra-Wide Band Antenna with C-Shaped Slot for WLAN Notching

Authors: Maryam Rasool, Farhan Munir, Fahad Nawaz, Saad Ahmad

Abstract:

A patch antenna operating in the Ultra-Wide Band of frequency (3.1 GHz – 10.6 GHz) is designed with enhanced security from interference from other applications by incorporating the notching technique. Patch antennas in the Ultra-Wide Band are becoming widely famous due to their low power, light weight and high data rate capability. Micro strip patch antenna’s patch can be altered to increase its bandwidth and introduce UWB character in it. The designed antenna is a patch antenna consisting of a conductive sheet of metal mounted over a large sheet of metal called the ground plane with a substrate separating the two. Notched bands are public safety WLAN, WLAN and FSS. Different techniques used to implement the UWB antenna were individually implemented and there results were examined. V shaped patch was then chosen and modified to an arrow shaped patch to give the optimized results operating on the entire UWB region with considerable return loss. The frequency notch prevents the operation of the antenna at a particular range of frequency, hence minimizing interference from other systems. There are countless techniques for introducing the notch but we have used inverted C-shaped slots in the UWB patch to get the notch characteristics as output and also wavelength resonators to introduce notch in UWB band. The designed antenna is simulated in High Frequency Structural Simulator (HFSS) 13.0 by Ansoft.

Keywords: HFSS, Notch, UWB, WLAN

Procedia PDF Downloads 385
933 Electronic Structure Calculation of AsSiTeB/SiAsBTe Nanostructures Using Density Functional Theory

Authors: Ankit Kargeti, Ravikant Shrivastav, Tabish Rasheed

Abstract:

The electronic structure calculation for the nanoclusters of AsSiTeB/SiAsBTe quaternary semiconductor alloy belonging to the III-V Group elements was performed. Motivation for this research work was to look for accurate electronic and geometric data of small nanoclusters of AsSiTeB/SiAsBTe in the gaseous form. The two clusters, one in the linear form and the other in the bent form, were studied under the framework of Density Functional Theory (DFT) using the B3LYP functional and LANL2DZ basis set with the software packaged Gaussian 16. We have discussed the Optimized Energy, Frontier Orbital Energy Gap in terms of HOMO-LUMO, Dipole Moment, Ionization Potential, Electron Affinity, Binding Energy, Embedding Energy, Density of States (DoS) spectrum for both structures. The important findings of the predicted nanostructures are that these structures have wide band gap energy, where linear structure has band gap energy (Eg) value is 2.375 eV and bent structure (Eg) value is 2.778 eV. Therefore, these structures can be utilized as wide band gap semiconductors. These structures have high electron affinity value of 4.259 eV for the linear structure and electron affinity value of 3.387 eV for the bent structure form. It shows that electron acceptor capability is high for both forms. The widely known application of these compounds is in the light emitting diodes due to their wide band gap nature.

Keywords: density functional theory, DFT, density functional theory, nanostructures, HOMO-LUMO, density of states

Procedia PDF Downloads 84
932 Synthesis of Silver Nanoparticle: An Analytical Method Based Approach for the Quantitative Assessment of Drug

Authors: Zeid A. Alothman

Abstract:

Silver nanoparticle (AgNP) has been synthesized using adrenaline. Adrenaline readily undergoes an autoxidation reaction in an alkaline medium with the dissolved oxygen to form adrenochrome, thus behaving as a mild reducing agent for the dissolved oxygen. This reducing behavior of adrenaline when employed to reduce Ag(+) ions yielded a large enhancement in the intensity of absorbance in the visible region. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) studies have been performed to confirm the surface morphology of AgNPs. Further, the metallic nanoparticles with size greater than 2 nm caused a strong and broad absorption band in the UV-visible spectrum called surface plasmon band or Mie resonance. The formation of AgNPs caused the large enhancement in the absorbance values with λmax at 436 nm through the excitation of the surface plasmon band. The formation of AgNPs was adapted to for the quantitative assessment of adrenaline using spectrophotometry with lower detection limit and higher precision values.

Keywords: silver nanoparticle, adrenaline, XRD, TEM, analysis

Procedia PDF Downloads 177
931 First Principle Study of Electronic and Optical Properties of YNi₄Si-Type HoNi₄Si Compound

Authors: D. K. Maurya, S. M. Saini

Abstract:

We investigate theoretically the electronic and optical properties of YNi₄Si-type HoNi₄Si compound from first principle calculations. Calculations are performed using full-potential augmented plane wave (FPLAPW) method in the frame work of density functional theory (DFT). The Coulomb corrected local-spin density approximation (LSDA+U) in the self-interaction correction (SIC) has been used for exchange-correlation potential. Analysis of the calculated band structure of HoNi₄Si compound demonstrates their metallic character. We found Ni-3d states mainly contribute to density of states from -5.0 eV to the Fermi level while the Ho-f states peak stands tall in comparison to the small contributions made by the Ni-d and Ho-d states above Fermi level, which is consistent with experiment, in HoNi4Si compound. Our calculated optical conductivity compares well with the experimental data and the results are analyzed in the light of band to band transitions.

Keywords: electronic properties, density of states, optical properties, LSDA+U approximation, YNi₄Si-type HoNi4Si compound

Procedia PDF Downloads 209
930 Depletion Layer Parameters of Al-MoO3-P-CdTe-Al MOS Structures

Authors: A. C. Sarmah

Abstract:

The Al-MoO3-P-CdTe-Al MOS sandwich structures were fabricated by vacuum deposition method on cleaned glass substrates. Capacitance versus voltage measurements were performed at different frequencies and sweep rates of applied voltages for oxide and semiconductor films of different thicknesses. In the negative voltage region of the C-V curve a high differential capacitance of the semiconductor was observed and at high frequencies (<10 kHz) the transition from accumulation to depletion and further to deep depletion was observed as the voltage was swept from negative to positive. A study have been undertaken to determine the value of acceptor density and some depletion layer parameters such as depletion layer capacitance, depletion width, impurity concentration, flat band voltage, Debye length, flat band capacitance, diffusion or built-in-potential, space charge per unit area etc. These were determined from C-V measurements for different oxide and semiconductor thicknesses.

Keywords: debye length, depletion width, flat band capacitance, impurity concentration

Procedia PDF Downloads 424
929 Effect of Fabrication Errors on High Frequency Filter Circuits

Authors: Wesam Ali

Abstract:

This paper provides useful guidelines to the circuit designers on the magnitude of fabrication errors in multilayer millimeter-wave components that are acceptable and presents data not previously reported in the literature. A particularly significant error that was quantified was that of skew between conductors on different layers, where it was found that a skew angle of only 0.1° resulted in very significant changes in bandwidth and insertion loss. The work was supported by a detailed investigation on a 35GHz, multilayer edge-coupled band-pass filter, which was fabricated on alumina substrates using photoimageable thick film process.

Keywords: fabrication errors, multilayer, high frequency band, photoimagable technology

Procedia PDF Downloads 440
928 An Intelligent Cloud Radio Access Network (RAN) Architecture for Future 5G Heterogeneous Wireless Network

Authors: Jin Xu

Abstract:

5G network developers need to satisfy the necessary requirements of additional capacity from massive users and spectrally efficient wireless technologies. Therefore, the significant amount of underutilized spectrum in network is motivating operators to combine long-term evolution (LTE) with intelligent spectrum management technology. This new LTE intelligent spectrum management in unlicensed band (LTE-U) has the physical layer topology to access spectrum, specifically the 5-GHz band. We proposed a new intelligent cloud RAN for 5G.

Keywords: cloud radio access network, wireless network, cloud computing, multi-agent

Procedia PDF Downloads 387
927 How Much the Role of Fertilizers Management and Wheat Planting Methods on Its Yield Improvement?

Authors: Ebrahim Izadi-Darbandi, Masoud Azad, Masumeh Dehghan

Abstract:

In order to study the effects of nitrogen and phosphoruse management and wheat sowing method on wheat yield, two experiments was performed as factorial, based on completely randomized design with three replications at Research Farm, Faculty of Agriculture, Ferdowsi University of Mashhad, Iran in 2009. In the first experiment nitrogen application rates (100kg ha-1, 200 kg ha-1, 300 kg ha-1), phosphorus application rates (100 kg ha-1, 200 kg ha-1) and two levels of their application methods (Broadcast and Band) were studied. The second experiment treatments included of wheat sowing methods (single-row with 30 cm distance and twine row on 60 cm width ridges), as main plots and nitrogen and phosphorus application methods (Broadcast and Band) as sub plots (150 kg ha-1). Phosphorus and nitrogen sources for fertilization at both experiment were respectively super phosphate, applied before wheat sowing and incorporated with soil and urea, applied in two phases (50% pre plant) and (50%) near wheat shooting. Results from first experiment showed that the effect of fertilizers application methods were significant (p≤0.01) on wheat yield increasing. Band application of phosphorus and nitrogen were increased biomass and seed yield of wheat with nine and 15% respectively compared to their broadcast application. The interaction between the effects of nitrogen and phosphorus application rate with phosphorus and nitrogen application methods, showed that band application of fertilizers and the rate of application of 200kg/ha phosphorus and 300kg/ha nitrogen were the best methods in wheat yield improvement. The second experiment also showed that the effect of wheat sowing method and fertilizers application methods were significant (p≤0.01) on wheat seed and biomass yield improvement. Wheat twine row on 60 cm width ridges sowing method, increased its biomass and seed yield for 22% and 30% respectively compared to single-row with 30 cm. Wheat sowing method and fertilizers application methods interaction indicated that band application of fertilizers and wheat twine row on 60 cm width ridges sowing method was the best treatment on winter wheat yield improvement. In conclusion these results indicated that nitrogen and phosphorus management in wheat and modifying wheat sowing method have important role in increasing fertilizers use efficiency.

Keywords: band application, broadcast application, rate of fertilizer application, wheat seed yield, wheat biomass yield

Procedia PDF Downloads 429
926 A Subband BSS Structure with Reduced Complexity and Fast Convergence

Authors: Salah Al-Din I. Badran, Samad Ahmadi, Ismail Shahin

Abstract:

A blind source separation method is proposed; in this method, we use a non-uniform filter bank and a novel normalisation. This method provides a reduced computational complexity and increased convergence speed comparing to the full-band algorithm. Recently, adaptive sub-band scheme has been recommended to solve two problems: reduction of computational complexity and increase the convergence speed of the adaptive algorithm for correlated input signals. In this work, the reduction in computational complexity is achieved with the use of adaptive filters of orders less than the full-band adaptive filters, which operate at a sampling rate lower than the sampling rate of the input signal. The decomposed signals by analysis bank filter are less correlated in each subband than the input signal at full bandwidth, and can promote better rates of convergence.

Keywords: blind source separation, computational complexity, subband, convergence speed, mixture

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925 Preparation and Visible Light Photoactivity of N-Doped ZnO/ZnS Photocatalysts

Authors: Nuray Güy, Mahmut Özacar

Abstract:

Semiconductor nanoparticles such as TiO₂ and ZnO as photocatalysts are very efficient catalysts for wastewater treatment by the chemical utilization of light energy, which is capable of converting the toxic and nonbiodegradable organic compounds into carbon dioxide and mineral acids. ZnO semiconductor has a wide bandgap energy of 3.37 eV and a relatively large exciton binding Energy (60 meV), thus can absorb only UV light with the wavelength equal to or less than 385 nm. It exhibits low efficiency under visible light illumination due to its wide band gap energy. In order to improve photocatalytic activity of ZnO under visible light, band gap of ZnO may be narrowed by doping such as N, C, S nonmetal ions and coupled two separate semiconductors possessing different energy levels for their corresponding conduction and valence bands. ZnS has a wider band gap (Eg=3.7 eV) than ZnO and generates electron–hole pairs by photoexcitation rapidly. In the present work, N doped ZnO/ZnS nano photocatalysts with visible-light response were synthesized by microwave-hydrothermal method using thiourea as N source. The prepared photocatalysts were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and UV–visible (UV–vis). The photocatalytic activities samples and undoped ZnO have been studied for the degradation of dye, and have also been compared with together.

Keywords: photocatalyst, synthesis, visible light, ZnO/ZnS

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924 Progression Rate, Prevalence, Incidence of Black Band Disease on Stony (Scleractinia) in Barranglompo Island, South Sulawesi

Authors: Baso Hamdani, Arniati Massinai, Jamaluddin Jompa

Abstract:

Coral diseases are one of the factors affect reef degradation. This research had analysed the progression rate, incidence, and prevalence of Black Band Disease (BBD) on stony coral (Pachyseris sp.) in relation to the environmental parameters (pH, nitrate, phospate, Dissolved Organic Matter (DOM), and turbidity). The incidence of coral disease was measured weekly for 6 weeks using Belt Transect Method. The progression rate of BBD was measured manually. Furthermore, the prevalence and incidence of BBD were calculated each colonies infected. The relationship between environmental parameters and the progression rate, prevalence and incidence of BBD was analysed by Principal Component Analysis (PCA). The results showed the average of progression rate is 0,07 ± 0,02 cm/ hari. The prevalence of BBD increased from 0,92% - 19,73% in 7 weeks observation with the average incidence of new infected colonies coral 0,2 - 0,65 colony/day The environment factors which important were pH, Nitrate, Phospate, DOM, and Turbidity.

Keywords: progression rate, incidence, prevalence, Black Band Disease, Barranglompo

Procedia PDF Downloads 611
923 Kinetic Study of C₃N₄/CuWO₄: Photocatalyst towards Solar Light Inactivation of Mixed Populated Bacteria

Authors: Rimzhim Gupta, Bhanupriya Boruah, Jayant M. Modak, Giridhar Madras

Abstract:

Microbial contamination is one of the major concerns in the field of water treatment. AOP (advanced oxidation processes) is well-established method to resolve the issue of removal of contaminants in water. A Z-scheme composite g-C₃N₄/CuWO₄ was synthesized by sol-gel method for the photocatalytic inactivation of a mixed population of Gram-positive bacteria (S. aureus) and Gram-negative bacteria (E. coli). The photoinactivation was observed for different types of bacteria in the same medium together and individually in the absence of the nutrients. The lattice structures and phase purities were determined by X-ray diffraction. For morphological and topographical features, scanning electron microscopy and transmission electron microscopy analyses were carried out. The band edges of the semiconductor (valence band and conduction band) were determined by ultraviolet photoelectron microscopy. The lifetime of the charge carriers and band gap of the semiconductors were determined by time resolved florescence spectroscopy and diffused reflectance spectroscopy, respectively. The effect of weight ratio of C₃N₄ and CuWO₄ was observed by performing photocatalytic experiments. To investigate the exact mechanism and major responsible radicals for photocatalysis, scavenger studies were performed. The rate constants and order of the inactivation reactions were obtained by power law kinetics. For E. coli and S. aureus, the order of reaction and rate constants are 1.15, 0.9 and 1.39 ± 0.03 (CFU/mL)⁻⁰.¹⁵ h⁻¹, 47.95 ± 1.2 (CFU/mL)⁰.¹ h⁻¹, respectively.

Keywords: z-scheme, E. coli, S. aureus, sol-gel

Procedia PDF Downloads 118
922 Investigation of Utilizing L-Band Horn Antenna in Landmine Detection

Authors: Ahmad H. Abdelgwad, Ahmed A. Nashat

Abstract:

Landmine detection is an important and yet challenging problem remains to be solved. Ground Penetrating Radar (GPR) is a powerful and rapidly maturing technology for subsurface threat identification. The detection methodology of GPR depends mainly on the contrast of the dielectric properties of the searched target and its surrounding soil. This contrast produces a partial reflection of the electromagnetic pulses that are being transmitted into the soil and then being collected by the GPR.  One of the most critical hardware components for the performance of GPR is the antenna system. The current paper explores the design and simulation of a pyramidal horn antenna operating at L-band frequencies (1- 2 GHz) to detect a landmine. A prototype model of the GPR system setup is developed to simulate full wave analysis of the electromagnetic fields in different soil types. The contrast in the dielectric permittivity of the landmine and the sandy soil is the most important parameter to be considered for detecting the presence of landmine. L-band horn antenna is proved to be well-versed in the investigation of landmine detection.

Keywords: full wave analysis, ground penetrating radar, horn antenna design, landmine detection

Procedia PDF Downloads 187
921 Design of Multiband Microstrip Antenna Using Stepped Cut Method for WLAN/WiMAX and C/Ku-Band Applications

Authors: Ahmed Boutejdar, Bishoy I. Halim, Soumia El Hani, Larbi Bellarbi, Amal Afyf

Abstract:

In this paper, a planar monopole antenna for multi band applications is proposed. The antenna structure operates at three operating frequencies at 3.7, 6.2, and 13.5 GHz which cover different communication frequency ranges. The antenna consists of a quasi-modified rectangular radiating patch with a partial ground plane and two parasitic elements (open-loop-ring resonators) to serve as coupling-bridges. A stepped cut at lower corners of the radiating patch and the partial ground plane are used, to achieve the multiband features. The proposed antenna is manufactured on the FR4 substrate and is simulated and optimized using High Frequency Simulation System (HFSS). The antenna topology possesses an area of 30.5 x 30 x 1.6 mm3. The measured results demonstrate that the candidate antenna has impedance bandwidths for 10 dB return loss and operates from 3.80 – 3.90 GHz, 4.10 – 5.20 GHz, 11.2 – 11.5 GHz and from 12.5 – 14.0 GHz, which meet the requirements of the wireless local area network (WLAN), worldwide interoperability for microwave access (WiMAX), C- (Uplink) and Ku- (Uplink) band applications. Acceptable agreement is obtained between measurement and simulation results. Experimental results show that the antenna is successfully simulated and measured, and the tri-band antenna can be achieved by adjusting the lengths of the three elements and it gives good gains across all the operation bands.

Keywords: planar monopole antenna, FR4 substrate, HFSS, WLAN, WiMAX, C and Ku

Procedia PDF Downloads 158
920 Effect of Ti+ Irradiation on the Photoluminescence of TiO2 Nanofibers

Authors: L. Chetibi, D. Hamana, T. O. Busko, M. P. Kulish, S. Achour

Abstract:

TiO2 nanostructures have attracted much attention due to their optical, dielectric and photocatalytic properties as well as applications including optical coating, photocatalysis and photoelectrochemical solar cells. This work aims to prepare TiO2 nanofibers (NFs) on titanium substrate (Ti) by in situ oxidation of Ti foils in a mixture solution of concentrated H2O2 and NaOH followed by proton exchange and calcinations. Scanning Electron microscopy (SEM) revealed an obvious network of TiO2 nanofibers. The photoluminescence (PL) spectra of these nanostructures revealed a broad intense band in the visible light range with a reduced near edge band emission. The PL bands in the visible region, mainly, results from surface oxygen vacancies and others defects. After irradiation with Ti+ ions (the irradiation energy was E = 140 keV with doses of 1013 ions/cm2), the intensity of the PL spectrum decreased as a consequence of the radiation treatment. The irradiation with Ti+ leads to a reduction of defects and generation of non irradiative defects near to the level of the conduction band as evidenced by the PL results. On the other hand, reducing the surface defects on TiO2 nanostructures may improve photocatalytic and optoelectronic properties of this nanostructure.

Keywords: TiO2, nanofibers, photoluminescence, irradiation

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919 Structural and Electronic Properties of the Rock-salt BaxSr1−xS Alloys

Authors: B. Bahloul, K. Babesse, A. Dkhira, Y. Bahloul, L. Amirouche

Abstract:

Structural and electronic properties of the rock-salt BaxSr1−xS are calculated using the first-principles calculations based on the density functional theory (DFT) within the generalized gradient approximation (GGA), the local density approximation (LDA) and the virtual-crystal approximation (VCA). The calculated lattice parameters at equilibrium volume for x=0 and x=1 are in good agreement with the literature data. The BaxSr1−xS alloys are found to be an indirect band gap semiconductor. Moreoever, for the composition (x) ranging between [0-1], we think that our results are well discussed and well predicted.

Keywords: semiconductor, Ab initio calculations, rocksalt, band structure, BaxSr1−xS

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918 Step into the Escalator’s Fractal Behavior by Using the Poincare Map

Authors: Ali Albadri

Abstract:

Step band in an escalator moves in a cyclic periodic pattern. Similarly, most if not all of the components and sub-assemblies in the escalator operate in the same way. If you mark up one step in the step band of an escalator and stand next to the escalator, on the incline, to watch the marked-up step when it passes by, you ask yourself, does the marked up step behaves exactly the same way during each revolution when it passes you by again and again? We can say that; there is some similarity in this example and the example when an astronomer watches planets in the sky, and he or she asks himself or herself, does each planet intersects the plan of observation in the same position for every pantry rotation? For a fact, we know for the answer to the second example is no, because scientist, astronomers, and mathematicians have proven that planets deviate from their paths to take new paths during their planetary moves, albeit with minimal change. But what about the answer to the question in the first example? considering that there is increase in the wear and tear of components with time in the step, in the step band, in the tracks and in many other places in the escalator. There is also the accumulation of fatigue in the components and sub-assemblies. This research is part of many studies which we are conducting to address the answer for the question in the first example. We have been using the fractal dimension as a quantities tool and the Poincare map as a qualitative tool. This study has shown that the fractal dimension value and the shape and distribution of the orbits in the Poincare map has significant correlation with the quality of the mechanical components and sub-assemblies in the escalator.

Keywords: fractal dimension, Poincare map, rugby ball orbit, worm orbit

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917 Muscle Activation Comparisons in a Lat Pull down Exercise with Machine Weights, Resistance Bands and Body Weight Exercises

Authors: Trevor R. Higgins

Abstract:

The aim of this study was to compare muscle activation of the latissimus dorsi between pin-loaded machine (Lat Pull Down), resistance band (Lat Pull Down) and body-weight (Chin Up) exercises. A convenient sample of male college students with >2 years resistance training experience volunteered for the study. A paired t-test with repeated measures designs was carried out on results from EMG analysis. EMG analysis was conducted with Trigno wireless sensors (Delsys) placed laterally on the latissimus dorsi (left and right) of each participant. By conventional criteria the two-tailed P value suggested that differences between pin-loaded and body-weight was not significantly different (p = 0.93) and differences between pin-loaded and resistance band was not significantly different (p = 0.17) in muscle activity. In relation to conventional criteria the two-tailed P value suggested differences between body-weight and resistance band was not quite significantly different (p = 0.06) in muscle activity. However, effect size trends indicated that both body-weight and pin-loaded exercises where more effective in stimulating muscle electrical activity than a resistance band with male college athletes with >2 years resistance training experience. Although, resistance bands have increased in popularity in health and fitness centres, that for well-trained participants, they may not be effective in stimulating muscles of the latissimus dorsi. Therefore, when considering equipment and exercise selection for experienced resistance training participants pin-loaded machines and body-weight should be prescribed.

Keywords: pin-loaded, resistance bands, body weight, EMG analysis

Procedia PDF Downloads 233
916 Octagon Shaped Wearable Antenna for Band at 4GHz

Authors: M. Khazini, M.Damou, Z. Souar

Abstract:

In this paper, octagon antenna ultra wideband (UWB) low band wearable antenna designs have been proposed for in-body to on-body communication channel of wireless. Single element antenna, dual elements, are designed and compared in free space and in body proximity. Conformal design has been focused. Liquid crystal polymer (LCP) is a material that has gained attention as a potential high-performance microwave substrate and packaging material. This investigation uses several methods to determine the electrical properties of LCP for millimeter-wave frequencies.

Keywords: ultra wideband, wearable antenna, slot antenna, liquid crystal polymer (LCP), CST studio

Procedia PDF Downloads 319
915 A Ku/K Band Power Amplifier for Wireless Communication and Radar Systems

Authors: Meng-Jie Hsiao, Cam Nguyen

Abstract:

Wide-band devices in Ku band (12-18 GHz) and K band (18-27 GHz) have received significant attention for high-data-rate communications and high-resolution sensing. Especially, devices operating around 24 GHz is attractive due to the 24-GHz unlicensed applications. One of the most important components in RF systems is power amplifier (PA). Various PAs have been developed in the Ku and K bands on GaAs, InP, and silicon (Si) processes. Although the PAs using GaAs or InP process could have better power handling and efficiency than those realized on Si, it is very hard to integrate the entire system on the same substrate for GaAs or InP. Si, on the other hand, facilitates single-chip systems. Hence, good PAs on Si substrate are desirable. Especially, Si-based PA having good linearity is necessary for next generation communication protocols implemented on Si. We report a 16.5 to 25.5 GHz Si-based PA having flat saturated power of 19.5 ± 1.5 dBm, output 1-dB power compression (OP1dB) of 16.5 ± 1.5 dBm, and 15-23 % power added efficiency (PAE). The PA consists of a drive amplifier, two main amplifiers, and lump-element Wilkinson power divider and combiner designed and fabricated in TowerJazz 0.18µm SiGe BiCMOS process having unity power gain frequency (fMAX) of more than 250 GHz. The PA is realized as a cascode amplifier implementing both heterojunction bipolar transistor (HBT) and n-channel metal–oxide–semiconductor field-effect transistor (NMOS) devices for gain, frequency response, and linearity consideration. Particularly, a body-floating technique is utilized for the NMOS devices to improve the voltage swing and eliminate parasitic capacitances. The developed PA has measured flat gain of 20 ± 1.5 dB across 16.5-25.5 GHz. At 24 GHz, the saturated power, OP1dB, and maximum PAE are 20.8 dBm, 18.1 dBm, and 23%, respectively. Its high performance makes it attractive for use in Ku/K-band, especially 24 GHz, communication and radar systems. This paper was made possible by NPRP grant # 6-241-2-102 from the Qatar National Research Fund (a member of Qatar Foundation). The statements made herein are solely the responsibility of the authors.

Keywords: power amplifiers, amplifiers, communication systems, radar systems

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914 2.4 GHz 0.13µM Multi Biased Cascode Power Amplifier for ISM Band Wireless Applications

Authors: Udayan Patankar, Shashwati Bhagat, Vilas Nitneware, Ants Koel

Abstract:

An ISM band power amplifier is a type of electronic amplifier used to convert a low-power radio-frequency signal into a larger signal of significant power, typically used for driving the antenna of a transmitter. Due to drastic changes in telecommunication generations may lead to the requirements of improvements. Rapid changes in communication lead to the wide implementation of WLAN technology for its excellent characteristics, such as high transmission speed, long communication distance, and high reliability. Many applications such as WLAN, Bluetooth, and ZigBee, etc. were evolved with 2.4GHz to 5 GHz ISM Band, in which the power amplifier (PA) is a key building block of RF transmitters. There are many manufacturing processes available to manufacture a power amplifier for desired power output, but the major problem they have faced is about the power it consumed for its proper working, as many of them are fabricated on the GaN HEMT, Bi COMS process. In this paper we present a CMOS Base two stage cascode design of power amplifier working on 2.4GHz ISM frequency band. To lower the costs and allow full integration of a complete System-on-Chip (SoC) we have chosen 0.13µm low power CMOS technology for design. While designing a power amplifier, it is a real task to achieve higher power efficiency with minimum resources. This design showcase the Multi biased Cascode methodology to implement a two-stage CMOS power amplifier using ADS and LTSpice simulating tool. Main source is maximum of 2.4V which is internally distributed into different biasing point VB driving and VB driven as required for distinct stages of two stage RF power amplifier. It shows maximum power added efficiency near about 70.195% whereas its Power added efficiency calculated at 1 dB compression point is 44.669 %. Biased MOSFET is used to reduce total dc current as this circuit is designed for different wireless applications comes under 2.4GHz ISM Band.

Keywords: RFIC, PAE, RF CMOS, impedance matching

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913 Field-Programmable Gate Array-Based Baseband Signals Generator of X-Band Transmitter for Micro Satellite/CubeSat

Authors: Shih-Ming Wang, Chun-Kai Yeh, Ming-Hwang Shie, Tai-Wei Lin, Chieh-Fu Chang

Abstract:

This paper introduces a FPGA-based baseband signals generator (BSG) of X-band transmitter developed by National Space Organization (NSPO), Taiwan, for earth observation. In order to gain more flexibility for various applications, a number of modulation schemes, QPSK, DeQPSK and 8PSK 4D-TCM are included. For micro satellite scenario, the maximum symbol rate is up to 150Mbsps, and the EVM is as low as 1.9%. For CubeSat scenario, the maximum symbol rate is up to 60Mbsps, and the EVM is less than 1.7%. The maximum data rates are 412.5Mbps and 165Mbps, respectively. Besides, triple modular redundancy (TMR) scheme is implemented in order to reduce single event effect (SEE) induced by radiation. Finally, the theoretical error performance is provided based on comprehensive analysis, especially when BER is lower and much lower than 10⁻⁶ due to low error bit requirement of modern high-resolution earth remote-sensing instruments.

Keywords: X-band transmitter, FPGA (Field-Programmable Gate Array), CubeSat, micro satellite

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912 A Miniaturized Circular Patch Antenna Based on Metamaterial for WI-FI Applications

Authors: Fatima Zahra Moussa, Yamina Belhadef, Souheyla Ferouani

Abstract:

In this work, we present a new form of miniature circular patch antenna based on CSRR metamaterials with an extended bandwidth proposed for 5 GHz Wi-Fiapplications. A reflection coefficient of -35 dB and a radiation pattern of 7.47 dB are obtained when simulating the initial proposed antenna with the CST microwave studio simulation software. The notch insertion technique in the radiating element was used for matching the antenna to the desired frequency in the frequency band [5150-5875] MHz.An extension of the bandwidth from 332 MHz to 1423 MHz was done by the DGS (defected ground structure) technique to meet the user's requirement in the 5 GHz Wi-Fi frequency band.

Keywords: patch antenna, miniaturisation, CSRR, notches, wifi, DGS

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911 Millimeter-Wave Silicon Power Amplifiers for 5G Wireless Communications

Authors: Kyoungwoon Kim, Cuong Huynh, Cam Nguyen

Abstract:

Exploding demands for more data, faster data transmission speed, less interference, more users, more wireless devices, and better reliable service-far exceeding those provided in the current mobile communications networks in the RF spectrum below 6 GHz-has led the wireless communication industry to focus on higher, previously unallocated spectrums. High frequencies in RF spectrum near (around 28 GHz) or within the millimeter-wave regime is the logical solution to meet these demands. This high-frequency RF spectrum is of increasingly important for wireless communications due to its large available bandwidths that facilitate various applications requiring large-data high-speed transmissions, reaching up to multi-gigabit per second, of vast information. It also resolves the traffic congestion problems of signals from many wireless devices operating in the current RF spectrum (below 6 GHz), hence handling more traffic. Consequently, the wireless communication industries are moving towards 5G (fifth generation) for next-generation communications such as mobile phones, autonomous vehicles, virtual reality, and the Internet of Things (IoT). The U.S. Federal Communications Commission (FCC) proved on 14th July 2016 three frequency bands for 5G around 28, 37 and 39 GHz. We present some silicon-based RFIC power amplifiers (PA) for possible implementation for 5G wireless communications around 28, 37 and 39 GHz. The 16.5-28 GHz PA exhibits measured gain of more than 34.5 dB and very flat output power of 19.4±1.2 dBm across 16.5-28 GHz. The 25.5/37-GHz PA exhibits gain of 21.4 and 17 dB, and maximum output power of 16 and 13 dBm at 25.5 and 37 GHz, respectively, in the single-band mode. In the dual-band mode, the maximum output power is 13 and 9.5 dBm at 25.5 and 37 GHz, respectively. The 10-19/23-29/33-40 GHz PA has maximum output powers of 15, 13.3, and 13.8 dBm at 15, 25, and 35 GHz, respectively, in the single-band mode. When this PA is operated in dual-band mode, it has maximum output powers of 11.4/8.2 dBm at 15/25 GHz, 13.3/3 dBm at 15/35 GHz, and 8.7/6.7 dBm at 25/35 GHz. In the tri-band mode, it exhibits 8.8/5.4/3.8 dBm maximum output power at 15/25/35 GHz. Acknowledgement: This paper was made possible by NPRP grant # 6-241-2-102 from the Qatar National Research Fund (a member of Qatar Foundation). The statements made herein are solely the responsibility of the authors

Keywords: Microwaves, Millimeter waves, Power Amplifier, Wireless communications

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910 Compositional Influence in the Photovoltaic Properties of Dual Ion Beam Sputtered Cu₂ZnSn(S,Se)₄ Thin Films

Authors: Brajendra S. Sengar, Vivek Garg, Gaurav Siddharth, Nisheka Anadkat, Amitesh Kumar, Shaibal Mukherjee

Abstract:

The optimal band gap (~ 1 to 1.5 eV) and high absorption coefficient ~104 cm⁻¹ has made Cu₂ZnSn(S,Se)₄ (CZTSSe) films as one of the most promising absorber materials in thin-film photovoltaics. Additionally, CZTSSe consists of elements that are abundant and non-toxic, makes it even more favourable. The CZTSSe thin films are grown at 100 to 500ᵒC substrate temperature (Tsub) on Soda lime glass (SLG) substrate by Elettrorava dual ion beam sputtering (DIBS) system by utilizing a target at 2.43x10⁻⁴ mbar working pressure with RF power of 45 W in argon ambient. The chemical composition, depth profiling, structural properties and optical properties of these CZTSSe thin films prepared on SLG were examined by energy dispersive X-ray spectroscopy (EDX, Oxford Instruments), Hiden secondary ion mass spectroscopy (SIMS) workstation with oxygen ion gun of energy up to 5 keV, X-ray diffraction (XRD) (Rigaku Cu Kα radiation, λ=.154nm) and Spectroscopic Ellipsometry (SE, M-2000D from J. A. Woollam Co., Inc). It is observed that from that, the thin films deposited at Tsub=200 and 300°C show Cu-poor and Zn-rich states (i.e., Cu/(Zn + Sn) < 1 and Zn/Sn > 1), which is not the case for films grown at other Tsub. It has been reported that the CZTSSe thin films with the highest efficiency are typically at Cu-poor and Zn-rich states. The values of band gap in the fundamental absorption region of CZTSSe are found to be in the range of 1.23-1.70 eV depending upon the Cu/(Zn+Sn) ratio. It is also observed that there is a decline in optical band gap with the increase in Cu/(Zn+Sn) ratio (evaluated from EDX measurement). Cu-poor films are found to have higher optical band gap than Cu-rich films. The decrease in the band gap with the increase in Cu content in case of CZTSSe films may be attributed to changes in the extent of p-d hybridization between Cu d-levels and (S, Se) p-levels. CZTSSe thin films with Cu/(Zn+Sn) ratio in the range 0.86–1.5 have been successfully deposited using DIBS. Optical band gap of the films is found to vary from 1.23 to 1.70 eV based on Cu/(Zn+Sn) ratio. CZTSe films with Cu/ (Zn+Sn) ratio of .86 are found to have optical band gap close to the ideal band gap (1.49 eV) for highest theoretical conversion efficiency. Thus by tailoring the value of Cu/(Zn+Sn), CZTSSe thin films with the desired band gap could be obtained. Acknowledgment: We are thankful to DIBS, EDX, and XRD facility equipped at Sophisticated Instrument Centre (SIC) at IIT Indore. The authors B. S. S and A. K. acknowledge CSIR, and V. G. acknowledges UGC, India for their fellowships. B. S. S is thankful to DST and IUSSTF for BASE Internship Award. Prof. Shaibal Mukherjee is thankful to DST and IUSSTF for BASE Fellowship and MEITY YFRF award. This work is partially supported by DAE BRNS, DST CERI, and DST-RFBR Project under India-Russia Programme of Cooperation in Science and Technology. We are thankful to Mukul Gupta for SIMS facility equipped at UGC-DAE Indore.

Keywords: CZTSSe, DIBS, EDX, solar cell

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