Search results for: Zekun Li

Authors: Zekun Li, Bart Merci, Miaocheng Weng, Fang Liu

Abstract:

The Z-shaped passage, widely used in metro entrance/exit passageways, inclined mining laneways, and other applications, features steep slopes and a combination of horizontal and inclined sections. These characteristics lead to notable differences in airflow patterns and temperature distributions compared to conventional confined passages. In fires occurring within Z-shaped passages under natural ventilation with a weak stack effect, the induced airflow may be insufficient to fully confined smoke downstream of the fire source. This can cause smoke back-layering upstream, with the possibility of smoke escaping from the lower entrance located upstream of the fire. Consequently, not all the heat from the fire source contributes to the stack effect. This study combines theoretical analysis and fire simulations to examine the influence of various heat release rates (HRR), passage structures, and fire source locations on the induced airflow velocity driven by the stack effect. An empirical equation is proposed to quantify the strength of the stack effect under different conditions. Additionally, predictive models have been developed to determine the critical induced airflow and to estimate the heat of smoke escaping from the lower entrance of the passage.

Keywords: stack effect, critical velocity, heat outflow, numerical simulation

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Authors: Zekun Lin, Xun Li

Abstract:

Silicon photonics has gained much interest and extensive research for a promising aspect for fabricating compact, high-speed and low-cost photonic devices compatible with complementary metal-oxide-semiconductor (CMOS) process. Despite the remarkable progress made on the development of silicon photonics, high-performance, cost-effective, and reliable silicon laser sources are still missing. In this work, we present a 1550 nm III-V/silicon laser design with stable single-mode lasing property and robust and high-efficiency vertical coupling. The InP cavity consists of two uniform Bragg grating sections at sides for mode selection and feedback, as well as a central second-order grating for surface emission. A grating coupler is etched on the SOI waveguide by which the light coupling between the parallel III-V and SOI is reached vertically rather than by evanescent wave coupling. Laser characteristic is simulated and optimized by the traveling-wave model (TWM) and a Green’s function analysis as well as a 2D finite difference time domain (FDTD) method for the coupling process. The simulation results show that single-mode lasing with SMSR better than 48dB is achievable, and the threshold current is less than 15mA with a slope efficiency of around 0.13W/A. The coupling efficiency is larger than 42% and possesses a high tolerance with less than 10% reduction for 10 um horizontal or 15 um vertical dislocation. The design can be realized by standard flip-chip bonding techniques without co-fabrication of III-V and silicon or precise alignment.

Keywords: III-V/silicon integration, silicon photonics, single mode laser, vertical coupling

Procedia PDF Downloads 156