Search results for: Xiaohang Li

Authors: Sajjad Farahani, Wilkistar Otieno, Xiaohang Yue

Abstract:

This paper develops a model for the optimal disposition decision for product returns in a remanufacturing system with limited recoverable inventory capacity. In this model, a constant demand is satisfied by remanufacturing returned products which are up to the minimum required quality grade. The quality grade of returned products is uncertain and remanufacturing cost increases as the quality level decreases, and remanufacturer wishes to determine which returned product to accept to be remanufactured for reselling, and any unaccepted returns may be salvaged at a value that increases with their quality level. Accepted returns can be stocked for remanufacturing upon demand requests, but incur a holding cost. A Markov decision problem is formulated in order to evaluate various performance measures for this system and obtain the optimal remanufacturing policy. A detailed numerical study reveals that our approach to the disposition problem outperforms the current industrial practice ignoring quality grade of returned products. In addition, we identify conditions under which this improvement is the highest.

Keywords: green supply chain management, matrix geometric method, production recovery, reverse supply chains

Procedia PDF Downloads 309

Authors: Hassan Irshad Bhatti, Saravanan Yuvaraja, Xiaohang Li

Abstract:

GaN-based devices, such as high electron mobility transistors (HEMTs), offer superior characteristics for high-power, high-frequency, and high-temperature applications [1]. However, this exceptional electrical performance is compromised by undesirable self-heating effects under high-power applications [2, 3]. Some of the issues caused by self-heating are current collapse, thermal runway and performance degradation [4, 5]. Therefore, accurate and reliable methods for measuring the temperature of individual devices on a chip are needed to monitor and control the thermal behavior of GaN-based devices [6]. Temperature measurement at the micro/nanoscale is a challenging task that requires specialized techniques such as Infrared microscopy, Raman thermometry, and thermoreflectance. Recently, micro-thermocouples (MTCs) have attracted considerable attention due to their advantages of simplicity, low cost, high sensitivity, and compatibility with standard fabrication processes [7, 8]. A micro-thermocouple is a junction of two different metal thin films, which generates a Seebeck voltage related to the temperature difference between a hot and cold zone. Integrating MTC in a device allows local temperature to be measured with high sensitivity and accuracy [9]. This work involves the fabrication and integration of micro-thermocouples (MTCs) to measure the channel temperature of GaN HEMT. Our fabricated MTC (Platinum-Chromium junction) has shown a sensitivity of 16.98 µV/K and can measure device channel temperature with high precision and accuracy. The temperature information obtained using this sensor can help improve GaN-based devices and provide thermal engineers with useful insights for optimizing their designs.

Keywords: Electrical Engineering, Thermal engineering, Power Devices, Semiconuctors

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