Search results for: Sharvey Dhongde

Authors: Vaishali Anagal, Vasudha Gokhale, Sharvey Dhongde

Abstract:

Old buildings have significance in many aspects. The manifold significance may include historic, architectural and cultural aspects. In a cultural city like Pune, India, numerous residential buildings exist in the core city whose age may range between 60-100 years. These represent the city’s history and culture. Most of them are still in use as residential buildings with adaptations in various degrees. Some of these buildings are enlisted as ‘Heritage Buildings’ by local municipal authority. However, there are number of buildings that have heritage value although they are not enlisted as heritage sites. A lot of these buildings have already been pulled down for several reasons such as end of technical life, inadequacy for users, increasing floor area ratios, inflating land prices and changing lifestyles etc. Literature suggest that place attachment and residential satisfaction are positively related. It also indicates that length of residency is positively correlated with the place attachment. Residential satisfaction is associated with number of factors including socio demographic characteristics of users, housing characteristics, neighborhood characteristics and behavioral characteristics. This research paper poses an inquiry about the dynamics of co-relation between place attachment and residential satisfaction in case of old residential buildings. The motive of this enquiry is to examine if place attachment can serve as a strong ground for restoration of these old buildings and evade the devastation of emblems of cultural heritage of the city. The methodology includes questionnaire survey of users as well as a qualitative assessment regarding place attachment and residential satisfaction. About 20 residential buildings in the core city of Pune are selected for this purpose. The results of survey are analyzed and conclusions are drawn.

Keywords: place attachment, residential satisfaction, old residential buildings, housing characteristics, cultural heritage

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Authors: Kaivan Karami, Sahalu Hassan, Sanna Taking, Afesome Ofiare, Aniket Dhongde, Abdullah Al-Khalidi, Edward Wasige

Abstract:

We have made a comparative study on the influence of Al₂O₃ and HfO₂ grown using atomic layer deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of Al₂O₃ and HfO₂ respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al₂O₃ gate dielectric layers respectively. The negative shift for the 20 nm HfO2 and 20 nm Al₂O₃ were 1.2 V and 4.9 V respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO₂ than Al₂O₃. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 10^4 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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