Search results for: Khawlh A. Alzubaidi

Authors: Khawlh A. Alzubaidi, Khadijah B. Alziyadi, Amor M. Alsayari

Abstract:

Now a days (Ga, Mn) is one of the most extensively studied and best understood diluted magnetic semiconductors. Also, the study of (Ga, Mn)As is a fervent research area since it allows to explore of a variety of novel functionalities and spintronics concepts that could be implemented in the future. In this work, we will calculate the energy gap of (Ga, Mn)As using the eight-band model. In the Hamiltonian, the effects of spin-orbit, spin-splitting, and strain will be considered. The dependence of the energy gap on Mn content, and the effect of the strain, which is varied continuously from tensile to compressive, will be studied. Finally, analytical expressions for the (Ga, Mn)As energy band gap, taking into account both parameters (Mn concentration and strain), will be provided.

Keywords: energy gap, diluted magnetic semiconductors, k.p method, strain

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Authors: Khadijah B. Alziyadi, Khawlh A. Alzubaidi, Amor M. Alsayari

Abstract:

Recently, GaMnAs diluted magnetic semiconductors(DMSs) have received considerable attention because they combine semiconductor and magnetic properties. GaMnAs has been used as a model DMS and as a test bed for many concepts and functionalities of spintronic devices. In this paper, a theoretical study on the band structure ofGaMnAswill be presented. The model that we used in this study is the 8-band k.p methodwherespin-orbit interaction, spin splitting, and strain are considered. The band structure of GaMnAs will be calculated in different directions in the reciprocal space. The effect of manganese content on the GaMnAs band structure will be discussed. Also, the influence of strain, which varied continuously from tensile to compressive, on the different bands will be studied.

Keywords: band structure, diluted magnetic semiconductor, k.p method, strain

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Authors: Khawlh A. Alzubaidi, Khadijah B. Alziyadi, Amor M. Alsayari

Abstract:

The discovery of a dilute magnetic semiconductor (DMS) in which ferromagnetism is carrier-mediated and persists above room temperature is a major step toward the implementation of spintronic devices for processing, transferring, and storing of information. Among the many types of DMS materials which have been investigated, Mn-doped GaAs has become one of the best candidates for technological application. However, despite major developments over the last few decades, the maximum Curie temperature (~200 K) remains well below room temperature. In this work, we have studied the effect of Mn content and strain on the GaMnAs effective masses of electron, heavy and light holes calculated in the different crystallographic direction. Also, the Curie temperature in the DMS GaMnAs alloy is determined. Compilation of GaMnAs band parameters have been carried out using the 8-band k.p model based on Lowdin perturbation theory where spin orbit, sp-d exchange interaction, and biaxial strain are taken into account. Our results show that effective masses, calculated along the different crystallographic directions, have a strong dependence on strain, ranging from -2% (tensile strain) to 2% (compressive strain), and Mn content increased from 1 to 5%. The Curie temperature is determined within the mean-field approach based on the Zener model.

Keywords: diluted magnetic semiconductors, k.p method, effective masses, curie temperature, strain

Procedia PDF Downloads 95

Authors: Salam Alzubaidi, G. Fantoni, F. Failli, M. Frosolini

Abstract:

The dynamic facility layout problem is a really critical issue in the competitive industrial market; thus, solving this problem requires robust design and effective simulation systems. The sustainable simulation requires inputting reliable and accurate data into the system. So this paper describes an automated system integrated into the real environment to measure the duration of the material handling operations, collect the data in real-time, and determine the variances between the actual and estimated time schedule of the operations in order to update the simulation software and redesign the facility layout periodically. The automated method- time measurement system collects the real data through using Radio Frequency-Identification (RFID) and Internet of Things (IoT) technologies. Hence, attaching RFID- antenna reader and RFID tags enables the system to identify the location of the objects and gathering the time data. The real duration gathered will be manipulated by calculating the moving average duration of the material handling operations, choosing the shortest material handling path, and then updating the simulation software to redesign the facility layout accommodating with the shortest/real operation schedule. The periodic simulation in real-time is more sustainable and reliable than the simulation system relying on an analysis of historical data. The case study of this methodology is in cooperation with a workshop team for producing mechanical parts. Although there are some technical limitations, this methodology is promising, and it can be significantly useful in the redesigning of the manufacturing layout.

Keywords: dynamic facility layout problem, internet of things, method time measurement, radio frequency identification, simulation

Procedia PDF Downloads 120