Search results for: H. E. Lapa

Authors: Bimal Raj Regmi, Cassandra Star

Abstract:

Climate change adaptation is now the priority of many Least Developed Countries (LDCs). The country governments in LDCs are designing institutional and financing architecture to implement adaptation programmes. Nepal has introduced the concept of Local Adaptation Plan of Action (LAPA) to facilitate adaptation at the local level. However, there is lack of clarity and ambiguity on whether or not LAPA can be effective means to reach to the most vulnerable. This research paper aims to generate evidences to assess the applicability and significance of LAPA. The study used a case study approach and relied on data gathered from field studies carried out in Pyuthan and Nawalparasi district of Nepal. The findings show that LAPA has potentials to link the community based adaptation with national adaptation initiatives and thus act as middle range approach to adaptation planning. However, the current scale of LAPA and its approaches to planning and delivery are constraints by socio-economic and governance barriers. This research paper argue that the in order to address the constraints a more flexible and co-management approach to LAPA is needed.

Keywords: community based adaptation, local adaptation, co-management, climate change

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Authors: M. H. Aldahrob, A. Kokce, S. Altindal, H. E. Lapa

Abstract:

In order to obtain the detailed information about the effect of (Zn-doped PVA) interfacial layer, surface states (Nss) and series resistance (Rs) on electrical characteristics, both Au/n- type 4H-SiC (MS) with and without (Zn doped PVA) interfacial layer were fabricated to compare. The main electrical parameters of them were investigated using forward and reverse bias current-voltage (I-V), capacitance-voltage (C-V) and conductance –voltage (G/W –V) measurements were performed at room temperature. Experimental results show that the value of ideality factor (n), zero –bias barrier height (ΦBo), Rs, rectifier rate (RR=IF/IR) and the density of Nss are strong functions interfacial layer and applied bias voltage. The energy distribution profile of Nss was obtained from forward bias I-V data by taking into account voltage dependent effective BH (ΦBo) and ideality factor (n(V)). Voltage dependent profile of Rs was also obtained both by using Ohm’s law and Nicollian and Brew methods. The other main diode parameters such as the concentration of doping donor atom (ND), Fermi energy level (EF).BH (ΦBo), depletion layer with (WD) were obtained by using the intercept and slope of the reverse bias C-2 vs V plots. It was found that (Zn-doped PVA) interfacial layer lead to a quite decrease in the values Nss, Rs and leakage current and increase in shunt resistance (Rsh) and RR. Therefore, we can say that the use of thin (Zn-doped PVA) interfacial layer can quite improved the performance of MS structure.

Keywords: interfacial polymer layer, thickness dependence, electric and dielectric properties, series resistance, interface state

Procedia PDF Downloads 234