Search results for: CO2 laser annealing

Authors: Man-Hong Lai, Dinusha S. Gunawardena, Kok-Sing Lim, Harith Ahmad

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In this paper, we have reported birefringence manipulation in regenerated high-birefringent fiber Bragg grating (RPMG) by using CO2 laser annealing method. The results indicate that the birefringence of RPMG remains unchanged after CO2 laser annealing followed by a slow cooling process, but reduced after the fast cooling process (~5.6×10-5). After a series of annealing procedures with different cooling rates, the obtained results show that slower the cooling rate, higher the birefringence of RPMG. The volume, thermal expansion coefficient (TEC) and glass transition temperature (Tg) change of stress applying part in RPMG during the cooling process are responsible for the birefringence change. Therefore, these findings are important to the RPMG sensor in high and dynamic temperature environment. The measuring accuracy, range and sensitivity of RPMG sensor are greatly affected by its birefringence value. This work also opens up a new application of CO2 laser for fiber annealing and birefringence modification.

Keywords: birefringence, CO2 laser annealing, regenerated gratings, thermal stress

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Authors: Tsutomu Iwayama, Takayuki Hama

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Si ion implantation was widely used to synthesize specimens of SiO2 containing supersaturated Si and subsequent high temperature annealing induces the formation of embedded luminescent Si nanocrystals. In this work, the potentialities of excimer UV-light (172 nm, 7.2 eV) irradiation and rapid thermal annealing (RTA) to enhance the photoluminescence and to achieve low temperature formation of Si nanocrystals have been investigated. The Si ions were introduced at acceleration energy of 180 keV to fluence of 7.5 x 1016 ions/cm2. The implanted samples were subsequently irradiated with an excimer-UV lamp. After the process, the samples were rapidly thermal annealed before furnace annealing (FA). Photoluminescence spectra were measured at various stages at the process. We found that the luminescence intensity is strongly enhanced with excimer-UV irradiation and RTA. Moreover, effective visible photoluminescence is found to be observed even after FA at 900 oC, only for specimens treated with excimer-UV lamp and RTA. We also prepared specimens of Si nanocrystals embedded in a SiO2 by reactive pulsed laser deposition (PLD) in an oxygen atmosphere. We will make clear the similarities and differences with the way of preparation.

Keywords: Ion implantation, photoluminescence, pulsed laser deposition, rapid thermal anneal, Si nanocrystals

Procedia PDF Downloads 288

Authors: Souha Bouagila, Soufiene Ilahi, Noureddine Yacoubi

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We have used Photothermal deflection spectroscopy PTD to investigate the impact of thermal annealing on electronics properties of GaInAsSb/GaSb.GaInAsSb used as an active layer for Vertical Cavity Surface Emitting laser (VCSEL). We have remarked that surface recombination velocity (SRV) from 7963 m / s (± 6.3%) to 1450 m / s (± 3.6) for as grown to sample annealed for 60 min. Accordingly, Force Microscopy images analyses agree well with the measure of surface recombination velocity. We have found that Root-Mean-Square Roughness (RMS) decreases as respect of annealing time. In addition, we have that the diffusion length and minority carrier mobility have been enhanced according to annealing time. However, due to annealing effects, the interface recombination velocity (IRV) is increased from 1196 m / s (± 5) to 6000 m/s (5%) for GaInAsSb in respect of annealed times.

Keywords: nonradiative lifetime, mobility of minority carrier, diffusion length, Surface and interface recombination velocity

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Authors: Thomas Doutre, Emmanuel De Meric De Bellefon

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This paper describes the application of local-search metaheuristic quantum annealing to portfolio opti- mization. Heuristic technics are particularly handy when Markowitz’ classical Mean-Variance problem is enriched with additional realistic constraints. Once tailored to the problem, computational experiments on real collected data have shown the superiority of quantum annealing over simulated annealing for this constrained optimization problem, taking advantages of quantum effects such as tunnelling.

Keywords: optimization, portfolio risk management, quantum annealing, metaheuristic

Procedia PDF Downloads 346

Authors: Amjad Almunyif, Amra Alhassni, Sultan Alhassan, Maryam Al Huwayz, Saud Alotaibi, Abdulaziz Almalki, Mohamed Henini

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The effect of rapid thermal annealing (RTA) on the optical properties of InAs quantum dots (QDs) grown at an As overpressure of 2x 10⁻⁶ Torr by molecular beam epitaxy (MBE) on (100) and (311)B GaAs substrates was investigated using photoluminescence (PL) technique. PL results showed that for the as-grown samples, the QDs grown on the high index plane (311)B have lower PL intensity and lower full width at half maximum (FWHM) than those grown on the conventional (100) plane. The latter demonstrates that the (311)B QDs have better size uniformity than (100) QDs. Compared with as-grown samples, a blue-shift was observed for all samples with increasing annealing temperature from 600°C to 700°C. For (100) samples, a narrowing of the FWHM was observed with increasing annealing temperature from 600°C to 700°C. However, in (311)B samples, the FWHM showed a different behaviour; it slightly increased when the samples were annealed at 600°C and then decreased when the annealing temperature increased to 700°C. As expected, the PL peak intensity for all samples increased when the laser excitation power increased. The PL peak energy temperature dependence showed a strong redshift when the temperature was increased from 10 K to 120 K. The PL peak energy exhibited an abnormal S-shape behaviour as a function of temperature for all samples. Most samples exhibited a significant enhancement in their activation energies when annealed at 600°C and 700°C, suggesting that annealing annihilated defects created during sample growth.

Keywords: RTA, QDs, InAs, MBE

Procedia PDF Downloads 142

Authors: M. Asghar, K. Mahmood, F. Malik, Lu Na, Y-H Xie, Yasin A. Raja, I. Ferguson

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In this paper, we have reported an enhancement in Seebeck coefficient of un-doped zinc oxide (ZnO) grown by molecular beam epitaxy (MBE) on silicon (001) substrate by annealing treatment. The grown ZnO thin films were annealed in oxygen environment at 500°C – 800°C, keeping a step of 100°C for one hour. Room temperature Seebeck measurements showed that Seebeck coefficient and power factor increased from 222 to 510 µV/K and 8.8×10^-6 to 2.6×10^-4 Wm^-1K^-2 as annealing temperature increased from 500°C to 800°C respectively. This is the highest value of Seebeck coefficient ever reported for un-doped MBE grown ZnO according to best of our knowledge. This observation was related with the improvement of crystal structure of grown films with annealing temperature. X-ray diffraction (XRD) results demonstrated that full width half maximum (FWHM) of ZnO (002) plane decreased and crystalline size increased as the annealing temperature increased. Photoluminescence study revealed that the intensity of band edge emission increased and defect emission decreased as annealing temperature increased because the density of oxygen vacancy related donor defects decreased with annealing temperature. This argument was further justified by the Hall measurements which showed a decreasing trend of carrier concentration with annealing temperature.

Keywords: ZnO, MBE, thermoelectric properties, annealing temperature, crystal structure

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Authors: Chi-Yan Chu, Kai-Chi Chuang, Huang-Chung Cheng

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In this study, the RRAM devices with the TiN/Ti/HfO_x/TiN structure were fabricated, then the electrical characteristics of the devices without annealing and after 400 °C and 500 °C of the furnace annealing (FA) temperature processes were compared. The RRAM devices after the FA’s 400 °C showed the lower forming, set and reset voltages than the other devices without annealing. However, the RRAM devices after the FA’s 500 °C did not show any electrical characteristics because the TiN/Ti/HfO_x/TiN device was oxidized, as shown in the XPS analysis. From these results, the RRAM devices after the FA’s 400 °C showed the best electrical characteristics.

Keywords: RRAM, furnace annealing (FA), forming, set and reset voltages, XPS

Procedia PDF Downloads 334

Authors: Soufiene Ilahi, Noureddine Yacoubi

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GaInAsSb grown on GaSb substrate is an interesting material employed as an active layer in vertical-cavity surface-emitting lasers (VCSELs) operating in mid-infrared emission. This material presents some advantages like highs optical absorption coefficient and good thermal conductivity, which is very desirable for VCSEL application. In this paper, we have investigated the effects of thermal annealing on optical properties and thermal conductivity of GaInAsSb/GaSb. The studies are carried out by means of the photo thermal deflection spectroscopy technique (PDS). In fact, optical absorption spectrum and thermal conductivity have been determined by a comparison between the experimental and theoretical phases of the PDS signal. We have found that thermal conductivity increased significantly to 13 W/m.K for GaInAsSb annealed during 60 min. In addition, we have found that bandgap energy is blue-shifted around 30 meV. The amplitudes signal of PDS reveals multiple reflections as a function of annealing time, which reflect the high crystalline quality of the layer.

Keywords: thermal conductivity, bandgap energy of GaInAsSb, GaInAsSb active layer, optical absorption

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Authors: Farzad Vakili-Farahani, Joern Lungershausen, Kilian Wasmer

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Wobbled laser beam welding, fast oscillations of a tiny laser beam within a designed path (weld geometry) during the laser pulse illumination, opens new possibilities to improve the marco-to micro-manufacturing process. The present work introduces the wobbled laser beam welding as a robust welding strategy for improving macro-to micro-fabrication process, e.g., the laser processing for gap-bridging and packaging industry. The typical requisites and relevant equipment for the development of a wobbled laser processing unit are addressed, including a suitable laser source, light delivery system, optics, proper beam deflection system and the design geometry. In addition, experiments have been carried out on titanium plate to compare the results of wobbled laser welding with conventional pulsed laser welding. As compared to the pulsed laser welding, the wobbled laser welding offers a much greater fusion area (i.e. additional molten material) while minimizing the HAZ and provides a better confinement of the material microstructural changes.

Keywords: wobbled laser beam welding, wobbling function, beam oscillation, micro welding

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Authors: Remzi Yildirim, Fatih. V. Çelebi, H. Haldun Göktaş, A. Behzat Şahin

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This study is about a single component cylindrical structured lens with gradient curve which we used for bending laser beams. It operates under atmospheric conditions and bends the laser beam independent of temperature, pressure, polarity, polarization, magnetic field, electric field, radioactivity, and gravity. A single piece cylindrical lens that can bend laser beams is invented. Lenses are made of transparent, tinted or colored glasses and used for undermining or absorbing the energy of the laser beams.

Keywords: laser, bending, lens, light, nonlinear optics

Procedia PDF Downloads 451

Authors: Remzi Yildirim, Fatih V. Çelebi, H. Haldun Göktaş, A. Behzat Şahin

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This study is about a single component cylindrical structured lens with gradient curve which we used for bending laser beams. It operates under atmospheric conditions and bends the laser beam independent of temperature, pressure, polarity, polarization, magnetic field, electric field, radioactivity, and gravity. A single piece cylindrical lens that can bend laser beams is invented. Lenses are made of transparent, tinted or colored glasses and used for undermining or absorbing the energy of the laser beams.

Keywords: laser, bending, lens, light, nonlinear optics

Procedia PDF Downloads 665

Authors: S. Ilahi, S. Almosni, F. Chouchene, M. Perrin, K. Zelazna, N. Yacoubi, R. Kudraweic, P. Rale, L. Lombez, J. F. Guillemoles, O. Durand, C. Cornet

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Great efforts have been dedicated to obtain high quality of GaAsPN. The properties of GaAsPN have played a great part on the development of solar cells devices based in Si substrate. The incorporation of N in GaAsPN that having a band gap around of 1.7 eV is of special interest in view of growing in Si substrate. In fact, post-growth and rapid thermal annealing (RTA) could be an effective way to improve the quality of the layer. Then, the influence of growth conditions and post-growth annealing on optical and thermal parameters is considered. We have used Photothermal deflection spectroscopy PDS to investigate the impact of rapid thermal annealing on thermal and optical properties of GaAsPN. In fact, the principle of the PDS consists to illuminate the sample by a modulated monochromatic light beam. Then, the absorbed energy is converted into heat through the nonradiative recombination process. The generated thermal wave propagates into the sample and surrounding media creating a refractive-index gradient giving rise to the deflection of a laser probe beam skimming the sample surface. The incident light is assumed to be uniform, and only the sample absorbs the light. In conclusion, the results are promising revealing an improvement in absorption coefficient and thermal conductivity.

Keywords: GaAsPN absorber, photothermal defelction technique PDS, photonics on silicon, thermal conductivity

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Authors: Subhasisa Nath, David Waugh, Graham Ormondroyd, Morwenna Spear, Andy Pitman, Paul Mason

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Wood is one of the most sustainable and environmentally favourable materials and is chemically treated in timber industries to maximise durability. To increase the chemical preservative uptake and retention by the wood, current limiting incision technologies are commonly used. This work reports the effects of single pulse CO2 laser-incision and frequency tripled Nd:YAG percussion laser-incision on the characteristics of laser-incised holes in the Radiata Pine. The laser-incision studies were based on changing laser wavelengths, energies and focal planes to conclude on an optimised combination for the laser-incision of Radiata Pine. The laser pulse duration had a dominant effect over laser power in controlling hole aspect ratio in CO2 laser-incision. A maximum depth of ~ 30 mm was measured with a laser power output of 170 W and a pulse duration of 80 ms. However, increased laser power led to increased carbonisation of holes. The carbonisation effect was reduced during laser-incision in the ultra-violet (UV) regime. Deposition of a foamy phase on the laser-incised hole wall was evident irrespective of laser radiation wavelength and energy. A maximum hole depth of ~20 mm was measured in the percussion laser-incision in the UV regime (355 nm) with a pulse energy of 320 mJ. The radial and tangential faces had a significant effect on laser-incision efficiency for all laser wavelengths. The laser-incised hole shapes and circularities were affected by the wood anatomy (earlywoods and latewoods in the structure). Subsequently, the mechanism of laser-incision is proposed by analysing the internal structure of laser-incised holes.

Keywords: CO2 Laser, Nd: YAG laser, incision, drilling, wood, hole characteristics

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Authors: Hayder Raad Hafuze, Munqith Saleem Dawood, Jamal Abdul Jabbar

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The effect of using both ultrasounds with laser in medical imaging of the biological tissue has been studied in this paper. Different wave lengths of incident laser light (405 nm, 532 nm, 650 nm, 808 nm and 1064 nm) were used with different ultrasound frequencies (1MHz and 3.3MHz). The results showed that, the change of acoustic intensity enhance the laser penetration of the tissue for different thickness. The existence of the ideal Raman-Nath diffraction pattern were investigated in terms of phase delay and incident angle.

Keywords: tissue, laser, ultrasound, effect, imaging

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Authors: Eugene Ivanov, Eduardo del-Rio, Igor Kapchenko, Maija Nystrӧm, Juha Kotila

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Series of low modulus beta Ti alloy billets and powders can be produced in commercial quantities using a combination of electron beam melting (EBM) and EIGA atomization processes. In the present study, TNZT alloy powder was produced and processed in the EOSINT M290 laser sintering system to produce parts for mechanical testing. Post heat treatments such as diffusion annealing to reduce internal stresses or hot isostatic pressing to remove closed pores were not applied. The density can visually be estimated to be > 99,9 %. According to EDS study Nb, Zr, and Ta are distributed homogeneously throughout the printed sample. There are no indications for any segregation or chemical inhomogeneity, i.e. variation of the element distribution. These points to the fact that under the applied experimental conditions the melt generated by the laser rapidly cools down in the SLM (Selective Laser Melting) process. The selective laser sintering yielded dense structures with relatively good surface quality. The mechanical properties, especially the elongation (24%) along with tensile strength ( > 500MPa) and modulus of elasticity (~60GPa), were found to be promising compared to titanium alloys in general.

Keywords: beta titanium alloys, additive manufacturing, powder, implants

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Authors: Divyesh Patel, Tanuja Srivastava

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This paper considers the NP-hard problem of reconstructing binary matrices satisfying exactly-1-4-adjacency constraint from its row and column projections. This problem is formulated into a maximization problem. The objective function gives a measure of adjacency constraint for the binary matrices. The maximization problem is solved by the simulated annealing algorithm and experimental results are presented.

Keywords: discrete tomography, exactly-1-4-adjacency, simulated annealing, binary matrices

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Authors: M. Hassani, Y. Hassani, N. Ajudanioskooei, N. N. Benvid

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Laser Forming process as a non-contact thermal forming process is widely used to forming and bending of metallic and non-metallic sheets. In this process, according to laser irradiation along a specific path, sheet is bent. One of the most important output parameters in laser forming is bending angle that depends on process parameters such as physical and mechanical properties of materials, laser power, laser travel speed and the number of scan passes. In this paper, Artificial Neural Network and Fuzzy Logic System were used to predict of bending angle in laser forming process. Inputs to these models were laser travel speed and laser power. The comparison between artificial neural network and fuzzy logic models with experimental results has been shown both of these models have high ability to prediction of bending angles with minimum errors.

Keywords: artificial neural network, bending angle, fuzzy logic, laser forming

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Authors: J. Pantoja Enríquez, G. P. Hernández, G. I. Duharte, X. Mathew, J. Moreira, P. J. Sebastian

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Cadmium sulfide films were deposited onto glass substrates by chemical bath deposition (CBD) from a bath containing cadmium acetate, ammonium acetate, thiourea, and ammonium hydroxide. The CdS thin films were annealed in air, argon, hydrogen and nitrogen for 1 h at various temperatures (300, 350, 400, 450 and 500 °C). The changes in optical and electrical properties of annealed treated CdS thin films were analyzed. The results showed that, the band-gap and resistivity depend on the post-deposition annealing atmosphere and temperatures. Thus, it was found that these properties of the films, were found to be affected by various processes with opposite effects, some beneficial and others unfavorable. The energy gap and resistivity for different annealing atmospheres was seen to oscillate by thermal annealing. Recrystallization, oxidation, surface passivation, sublimation and materials evaporation were found the main factors of the heat-treatment process responsible for this oscillating behavior. Annealing over 400 °C was seen to degrade the optical and electrical properties of the film.

Keywords: cds, thin films, annealing, optical, electrical properties

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Authors: Keivan Davami, Michael Munther, Lloyd Hackel

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The control of properties and material behavior by implementing thermal-mechanical processes is based on mechanical deformation and annealing according to a precise schedule that will produce a unique and stable combination of grain structure, dislocation substructure, texture, and dispersion of precipitated phases. The authors recently developed a thermal-mechanical technique to stabilize the microstructure of additively manufactured nickel-based superalloys even after exposure to high temperatures. However, the mechanism(s) that controls this stability is still under investigation. Laser peening (LP), also called laser shock peening (LSP), is a shock based (50 ns duration) post-processing technique used for extending performance levels and improving service life of critical components by developing deep levels of plastic deformation, thereby generating high density of dislocations and inducing compressive residual stresses in the surface and deep subsurface of components. These compressive residual stresses are usually accompanied with an increase in hardness and enhance the material’s resistance to surface-related failures such as creep, fatigue, contact damage, and stress corrosion cracking. While the LP process enhances the life span and durability of the material, the induced compressive residual stresses relax at high temperatures (>0.5Tm, where Tm is the absolute melting temperature), limiting the applicability of the technology. At temperatures above 0.5Tm, the compressive residual stresses relax, and yield strength begins to drop dramatically. The principal reason is the increasing rate of solid-state diffusion, which affects both the dislocations and the microstructural barriers. Dislocation configurations commonly recover by mechanisms such as climbing and recombining rapidly at high temperatures. Furthermore, precipitates coarsen, and grains grow; virtually all of the available microstructural barriers become ineffective.Our results indicate that by using “cyclic” treatments with sequential LP and annealing steps, the compressive stresses survive, and the microstructure is stable after exposure to temperatures exceeding 0.5Tm for a long period of time. When the laser peening process is combined with annealing, dislocations formed as a result of LPand precipitates formed during annealing have a complex interaction that provides further stability at high temperatures. From a scientific point of view, this research lays the groundwork for studying a variety of physical, materials science, and mechanical engineering concepts. This research could lead to metals operating at higher sustained temperatures enabling improved system efficiencies. The strengthening of metals by a variety of means (alloying, work hardening, and other processes) has been of interest for a wide range of applications. However, the mechanistic understanding of the often complex processes of interactionsbetween dislocations with solute atoms and with precipitates during plastic deformation have largely remained scattered in the literature. In this research, the elucidation of the actual mechanisms involved in the novel cyclic LP/annealing processes as a scientific pursuit is investigated through parallel studies of dislocation theory and the implementation of advanced experimental tools. The results of this research help with the validation of a novel laser processing technique for high temperature applications. This will greatly expand the applications of the laser peening technology originally devised only for temperatures lower than half of the melting temperature.

Keywords: laser shock peening, mechanical properties, indentation, high temperature stability

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Authors: Takashi Ehara, Takayoshi Nakanishi, Kohei Sasaki, Marina Abe, Hiroshi Abe, Kiyoaki Abe, Ryo Iizaka, Takuya Sato

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CuAlO₂ thin films are prepared on Si or sapphire substrate by sol-gel method using two kinds of sols. One is combination of Cu acetate and Al acetate basic, and the other is Cu nitrate and Al nitrate. In the case of acetate sol, XRD peaks of CuAlO₂ observed at annealing temperature of 800-950 ºC on both Si and sapphire substrates. In contrast, in the case of the films prepared using nitrate on Si substrate, XRD peaks of CuAlO₂ have been observed only at the annealing temperature of 800-850 ºC. At annealing temperature of 850ºC, peaks of other species have been observed beside the CuAlO₂ peaks, then, the CuAlO₂ peaks disappeared at annealing temperature of 900 °C with increasing in intensity of the other peaks. Intensity of the other peaks decreased at annealing temperature of 950 ºC with appearance of broad SiO₂ peak. In the present, we ascribe these peaks as metal silicide.

Keywords: CuAlO2, silicide, thin Films, transparent conducting oxide

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Authors: Mohammad Zamzam, Wesam Bachir, Imad Asaad

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Several studies have produced estimates of Er:YAG laser parameters and specifications but there is still insufficient data for reliable selection of laser parameters. As a consequence, there is a heightened need for ideal specifications of Er:YAG laser to reduce the amount of enamel ablation. The objective of this paper is to investigate the influence of Er:YAG laser parameters, energy level and pulse duration, on orthodontic composite removal after bracket debonding. The sample consisted of 45 cuboids of orthodontic composite made by plastic moulds. The samples were divided into three groups, each was irradiated with Er:YAG laser set at different energy levels and three values for pulse durations (50 µs, 100 µs, and 300 µs). Geometrical parameters (depth and area) of cavities formed by laser irradiation were determined. ANCOVA test showed statistically significant difference (p < 0.0.5) between the groups indicating a potential effect of laser pulse duration on the geometrical parameters after controlling laser energy level. A post-hoc Bonferroni test ranked the 50µ Er:YAG laser pulse as the most influential factor for all geometrical parameters in removing remnant composite from enamel surface. Also, 300 mJ laser pulses caused the largest removal of the composite. The results of the present study demonstrated the efficacy of 50 µs and 300 mJ Er:YAG laser pulse for removal of remnant orthodontic composite.

Keywords: enamel, Er:YAG, geometrical parameters, orthodontic composite, remnant composite

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Authors: Kshitij Sawke, Pradnyavant Kamble, Shrikant Patil

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The study investigates the effect on wear rate of laser clad of cast iron with silicon carbide. Metal components fail their desired use because they wear, which causes them to lose their functionality. The laser has been used as a heating source to create a melt pool over the surface of cast iron, and then a layer of hard silicon carbide is deposited. Various combinations of power and feed rate of laser have experimented. A suitable range of laser processing parameters was identified. Wear resistance and wear rate properties were evaluated and the result showed that the wear resistance of the laser treated samples was exceptional to that of the untreated samples.

Keywords: laser clad, processing parameters, wear rate, wear resistance

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Authors: Y. J. Chen, T. M. Yue, Z. N. Guo

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This paper reports the effects of laser energy on the characteristics of bubbles generated in the weld zone and the formation of new chemical bonds at the Polyethylene Terephthalate (PET)/Ti joint interface in laser joining of PET to Ti. The samples were produced by using different laser energies ranging from 1.5 J – 6 J in steps of 1.5 J, while all other joining parameters remained unchanged. The types of chemical bonding at the joint interface were analysed by the x-ray photoelectron spectroscopy (XPS) depth-profiling method. The results show that the characteristics of the bubbles and the thickness of the chemically bonded interface, which contains the laser generated bonds of Ti–C and Ti–O, increase markedly with increasing laser energy input. The tensile failure load of the joint depends on the combined effect of the amount and distribution of the bubbles formed and the chemical bonding intensity of the joint interface.

Keywords: laser direct joining, Ti/PET interface, laser energy, XPS depth profiling, chemical bond, tensile failure load

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Authors: Patrik Scajev, Pavels Onufrijevs, Algirdas Mekys, Tadas Malinauskas, Dominykas Augulis, Liudvikas Subacius, Kuo-Chih Lee, Jevgenijs Kaupuzs, Arturs Medvids, Hung Hsiang Cheng

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In this study, we focused on the optoelectronic properties of the photodiodes prepared by using 200 nm thick Ge₀.₉₅Sn₀.₀₅ epitaxial layers on Ge/n-Si substrate with aluminum contacts. Photodiodes were formed on non-irradiated and Nd: YAG laser irradiated Ge₀.₉₅Sn₀.₀₅ layers. The samples were irradiated by pulsed Nd: YAG laser with 136.7-462.6 MW/cm² intensity. The photodiodes were characterized by using short laser pulses with the wavelength in the 2.0-2.6 μm range. The laser-irradiated diode was found more sensitive in the long-wavelength range due to laser-induced Sn atoms redistribution providing formation of graded bandgap structure. Sub-millisecond photocurrent relaxation in the diodes revealed their suitability for image sensors. Our findings open the perspective for improving the photo-sensitivity of GeSn alloys in the mid-infrared by pulsed laser processing.

Keywords: GeSn, laser processing, photodetector, infrared

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Authors: Sandeep Kumar, Naveen Gupta

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The propagation of the Non-Gaussian laser beam results in strong self-focusing as compare to the Gaussian laser beam, which helps to achieve a prerequisite of the plasma-based electron, Terahertz generation, and higher harmonic generations. The theoretical investigation on the evolution of non-Gaussian laser beam through the collisional plasma with ramped density has been presented. The non-uniform irradiance over the cross-section of the laser beam results in redistribution of the carriers that modifies the optical response of the plasma in such a way that the plasma behaves like a converging lens to the laser beam. The formulation is based on finding a semi-analytical solution of the nonlinear Schrodinger wave equation (NLSE) with the help of variational theory. It has been observed that the decentred parameter ‘q’ of laser and wavenumber of ripples of medium contribute to providing the required conditions for the improvement of self-focusing.

Keywords: non-Gaussian beam, collisional plasma, variational theory, self-focusing

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Authors: Baobao Chang, Konrad Schneider, Vogel Roland, Gert Heinrich

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In this work, the influence of annealing on the mechanical αc-relaxation behavior of isotactic polypropylene (iPP) was investigated. The results suggest that the mechanical αc-relaxation behavior depends strongly on the confinement force on the polymer chains in the intermediate phase and the thickness of the intermediate phase. After quenching at 10°C, abundant crystallites with a wide size distribution are formed. The polymer chains in the intermediate phase are constrained by the crystallites, giving rise to one broad αc-relaxation peak. With an annealing temperature between 60°C~105°C, imperfect lamellae melting releases part of the constraint force, which reduces the conformational ordering of the polymer chains neighboring the amorphous phase. Consequently, two separate αc-relaxation peaks could be observed which are labeled as αc1-relaxation and αc2-relaxation. αc1-relaxation and αc2-relaxation describe the relaxation behavior of polymer chains in the region close to the amorphous phase and the crystalline phase, respectively. Both relaxation peaks shift to a higher temperature as annealing temperature increases. With an annealing temperature higher than 105°C, the new crystalline phase is formed in the intermediate phase, which enhances the constraint force on the polymer chains. αc1-relaxation peak is broadened obviously and its position shifts to a higher temperature as annealing temperature increases. Moreover, αc2-relaxation is undetectable because that the polymer chains in the region between the initial crystalline phase and the newly formed crystalline phase are strongly confined.

Keywords: annealing, αc-relaxation, isotactic-polypropylene, intermediate phase

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Authors: Bassim Shaheen Bachy, Jörg Franke

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In this study, a three dimensional numerical heat transfer model has been used to simulate the laser structuring of polymer substrate material in the Three-Dimensional Molded Interconnect Device (3D MID) which is used in the advanced multi-functional applications. A finite element method (FEM) transient thermal analysis is performed using APDL (ANSYS Parametric Design Language) provided by ANSYS. In this model, the effect of surface heat source was modeled with Gaussian distribution, also the effect of the mixed boundary conditions which consist of convection and radiation heat transfers have been considered in this analysis. The model provides a full description of the temperature distribution, as well as calculates the depth and the width of the groove upon material removal at different set of laser parameters such as laser power and laser speed. This study also includes the experimental procedure to study the effect of laser parameters on the depth and width of the removal groove metal as verification to the modeled results. Good agreement between the experimental and the model results is achieved for a wide range of laser powers. It is found that the quality of the laser structure process is affected by the laser scan speed and laser power. For a high laser structured quality, it is suggested to use laser with high speed and moderate to high laser power.

Keywords: laser structuring, simulation, finite element analysis, thermal modeling

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Authors: Ali Emre Öztürk, Ergun Ercelebi

Abstract:

Autonomous robotic systems needs an equipment like a human eye for their movement. Robotic camera systems, distance sensors and 3D laser scanners have been used in the literature. In this study a 3D laser scanner has been produced for those autonomous robotic systems. In general 3D laser scanners are using 2 dimension laser range finders that are moving on one-axis (1D) to generate the model. In this study, the model has been obtained by a one-dimensional laser range finder that is moving in two –axis (2D) and because of this the laser scanner has been produced cheaper. Furthermore for the laser scanner a motor driver, an embedded system control board has been used and at the same time a user interface card has been used to make the communication between those cards and computer. Due to this laser scanner, the density of the objects, the distance between the objects and the necessary path ways for the robot can be calculated. The data collected by the laser scanner system is converted in to cartesian coordinates to be modeled in AutoCAD program. This study shows also the synchronization between the computer user interface, AutoCAD and the embedded systems. As a result it makes the solution cheaper for such systems. The scanning results are enough for an autonomous robot but the scan cycle time should be developed. This study makes also contribution for further studies between the hardware and software needs since it has a powerful performance and a low cost.

Keywords: 3D laser scanner, embedded system, 1D laser range finder, 3D model

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Authors: Souha Bouagila, Soufiene Ilahi

Abstract:

Photothermal deflection technique PTD have been employed to study the impact of thermal annealing on minority carrier in GaInAsSb grown on GaSb substarte, which used as an active layer for Vertical Cavity Surface Emitting laser (VCSEL). Photothermal defelction technique is nondescructive and accurate technique for electronics parameters determination. The measure of non-radiative recombination, electronic diffusivity, surface and interface recombination are effectuated by fitting the theoretical PTD signal to the experimental ones. As a results, we have found that Non-radiative lifetime increases from 3.8 µs (± 3, 9 %) for not annealed GaInAsSb to the 7.1 µs (± 5, 7%). In fact, electronic diffusivity D increased from 60.1 (± 3.9 %) to 89.6 cm2 / s (± 2.7%) for the as grown to that annealed for 60 min respectively. We have remarked that surface recombination velocity (SRV) decreases from 7963 m / s (± 6.3%) to 1450 m / s (± 3.6).

Keywords: nonradiative lifetime, mobility of minority carrier, diffusion length, Surface and interface recombination velocity.GaInAsSb active layer

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Authors: M. A. Lahmer, K. Guergouri

Abstract:

In this work, Kinetic Monte Carlo (KMC) method was applied to study the thermal stability of hydrogen in ZnO bulk and thin films. Our simulation includes different possible events such as interstitial hydrogen (Hi) jumps, substitutional hydrogen (HO) formation and dissociation, oxygen and zinc vacancies jumps, hydrogen-VZn complexes formation and dissociation, HO-Hi complex formation and hydrogen molecule (H2) formation and dissociation. The obtained results show that the hidden hydrogen formed during thermal annealing or at room temperature is constituted of both hydrogen molecule and substitutional hydrogen. The ratio of this constituants depends on the initial defects concentration as well as the annealing temperature. For annealing temperature below 300°C hidden hydrogen was found to be constituted from both substitutional hydrogen and hydrogen molecule, however, for higher temperature it is composed essentially from HO defects only because H2 was found to be unstable. In the other side, our results show that the remaining hydrogen amount in sample during thermal annealing depend greatly on the oxygen vacancies in the material. H2 molecule was found to be stable for thermal annealing up to 200°C, VZnHn complexes are stable up to 350°C and HO was found to be stable up to 450°C.

Keywords: ZnO, hydrogen, thermal annealing, kinetic Monte Carlo

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