Search results for: β- emitting source
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 4665

Search results for: β- emitting source

4665 Development of Perovskite Quantum Dots Light Emitting Diode by Dual-Source Evaporation

Authors: Antoine Dumont, Weiji Hong, Zheng-Hong Lu

Abstract:

Light emitting diodes (LEDs) are steadily becoming the new standard for luminescent display devices because of their energy efficiency and relatively low cost, and the purity of the light they emit. Our research focuses on the optical properties of the lead halide perovskite CsPbBr₃ and its family that is showing steadily improving performances in LEDs and solar cells. The objective of this work is to investigate CsPbBr₃ as an emitting layer made by physical vapor deposition instead of the usual solution-processed perovskites, for use in LEDs. The deposition in vacuum eliminates any risk of contaminants as well as the necessity for the use of chemical ligands in the synthesis of quantum dots. Initial results show the versatility of the dual-source evaporation method, which allowed us to create different phases in bulk form by altering the mole ratio or deposition rate of CsBr and PbBr₂. The distinct phases Cs₄PbBr₆, CsPbBr₃ and CsPb₂Br₅ – confirmed through XPS (x-ray photoelectron spectroscopy) and X-ray diffraction analysis – have different optical properties and morphologies that can be used for specific applications in optoelectronics. We are particularly focused on the blue shift expected from quantum dots (QDs) and the stability of the perovskite in this form. We already obtained proof of the formation of QDs through our dual source evaporation method with electron microscope imaging and photoluminescence testing, which we understand is a first in the community. We also incorporated the QDs in an LED structure to test the electroluminescence and the effect on performance and have already observed a significant wavelength shift. The goal is to reach 480nm after shifting from the original 528nm bulk emission. The hole transport layer (HTL) material onto which the CsPbBr₃ is evaporated is a critical part of this study as the surface energy interaction dictates the behaviour of the QD growth. A thorough study to determine the optimal HTL is in progress. A strong blue shift for a typically green emitting material like CsPbBr₃ would eliminate the necessity of using blue emitting Cl-based perovskite compounds and could prove to be more stable in a QD structure. The final aim is to make a perovskite QD LED with strong blue luminescence, fabricated through a dual-source evaporation technique that could be scalable to industry level, making this device a viable and cost-effective alternative to current commercial LEDs.

Keywords: material physics, perovskite, light emitting diode, quantum dots, high vacuum deposition, thin film processing

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4664 Localization of Near Field Radio Controlled Unintended Emitting Sources

Authors: Nurbanu Guzey, S. Jagannathan

Abstract:

Locating radio controlled (RC) devices using their unintended emissions has a great interest considering security concerns. Weak nature of these emissions requires near field localization approach since it is hard to detect these signals in far field region of array. Instead of only angle estimation, near field localization also requires range estimation of the source which makes this method more complicated than far field models. Challenges of locating such devices in a near field region and real time environment are analyzed in this paper. An ESPRIT like near field localization scheme is utilized for both angle and range estimation. 1-D search with symmetric subarrays is provided. Two 7 element uniform linear antenna arrays (ULA) are employed for locating RC source. Experiment results of location estimation for one unintended emitting walkie-talkie for different positions are given.

Keywords: localization, angle of arrival (AoA), range estimation, array signal processing, ESPRIT, Uniform Linear Array (ULA)

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4663 Flexible and Color Tunable Inorganic Light Emitting Diode Array for High Resolution Optogenetic Devices

Authors: Keundong Lee, Dongha Yoo, Youngbin Tchoe, Gyu-Chul Yi

Abstract:

Light emitting diode (LED) array is an ideal optical stimulation tool for optogenetics, which controls inhibition and excitation of specific neurons with light-sensitive ion channels or pumps. Although a fiber-optic cable with an external light source, either a laser or LED mechanically connected to the end of the fiber-optic cable has widely been used for illumination on neural tissue, a new approach to use micro LEDs (µLEDs) has recently been demonstrated. The LEDs can be placed directly either on the cortical surface or within the deep brain using a penetrating depth probe. Accordingly, this method would not need a permanent opening in the skull if the LEDs are integrated with miniature electrical power source and wireless communication. In addition, multiple color generation from single µLED cell would enable to excite and/or inhibit neurons in localized regions. Here, we demonstrate flexible and color tunable µLEDs for the optogenetic device applications. The flexible and color tunable LEDs was fabricated using multifaceted gallium nitride (GaN) nanorod arrays with GaN nanorods grown on InxGa1−xN/GaN single quantum well structures (SQW) anisotropically formed on the nanorod tips and sidewalls. For various electroluminescence (EL) colors, current injection paths were controlled through a continuous p-GaN layer depending on the applied bias voltage. The electric current was injected through different thickness and composition, thus changing the color of light from red to blue that the LED emits. We believe that the flexible and color tunable µLEDs enable us to control activities of the neuron by emitting various colors from the single µLED cell.

Keywords: light emitting diode, optogenetics, graphene, flexible optoelectronics

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4662 Simulation and Characterization of Organic Light Emitting Diodes and Organic Photovoltaics Using Physics Based Tool

Authors: T. A. Shahul Hameed, P. Predeep, Anju Iqbal, M. R. Baiju

Abstract:

Research and development in organic photovoltaic cells and Organic Light Emitting Diodes have gained wider acceptance due to the advent of many advanced techniques to enhance the efficiency and operational hours. Here we report our work on design, simulation and characterizationracterize the bulk heterojunction organic photo cell and polymer light emitting diodes in different layer configurations using ATLAS, a licensed device simulation tool. Bulk heterojuction and multilayer devices were simulated for comparing their performance parameters.

Keywords: HOMO, LUMO, PLED, OPV

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4661 An Improved Visible Range Absorption Spectroscopy on Soil Macronutrient

Authors: Suhaila Isaak, Yusmeeraz Yusof, Khairunnisa Mohd Yusof, Ahmad Safuan Abdul Rashid

Abstract:

Soil fertility is commonly evaluated by soil macronutrients such as nitrate, potassium, and phosphorus contents. Optical spectroscopy is an emerging technology which is rapid and simple has been widely used in agriculture to measure soil fertility. For visible and near infrared absorption spectroscopy, the absorbed light level in is useful for soil macro-nutrient measurement. This is because the absorption of light in a soil sample influences sensitivity of the measurement. This paper reports the performance of visible and near infrared absorption spectroscopy in the 400–1400 nm wavelength range using light-emitting diode as the excitation light source to predict the soil macronutrient content of nitrate, potassium, and phosphorus. The experimental results show an improved linear regression analysis of various soil specimens based on the Beer–Lambert law to determine sensitivity of soil spectroscopy by evaluating the absorption of characteristic peaks emitted from a light-emitting diode and detected by high sensitivity optical spectrometer. This would denote in developing a simple and low-cost soil spectroscopy with light-emitting diode for future implementation.

Keywords: macronutrients absorption, optical spectroscopy, soil, absorption

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4660 Investigation of Bremsstrahlung, Braking Radiation from Beta-Emitting Radioactive Sources

Authors: Metin Kömsöken, Ayşe Güneş Tanır, Onur Karaman

Abstract:

Usage of high energy charged particles for diagnosis and treatment has been widespread in medicine. The main purpose is to investigate that Bremsstrahlung which occurs by tissue interactions with charged particles should not be neglected. Nuclear stopping power (Bremsstrahlung) was calculated for lung, brain, skin, muscle, bone (cortical) and water targets for the energies of electrons obtained from LINAC used in radiotherapy and of β+ sources used in positron emission tomography (PET). These calculations were done by using the four different analytical functions including classical Bethe-Bloch, Tsoulfanidis, modified Bethe-Bloch and modified Tsoulfanidis equations. It was concluded that obtained results were compatible with that of National Institute of Standards and Technology (NIST-ESTAR).

Keywords: β- emitting source, bremsstrahlung, therapeutic radionuclides, LINAC

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4659 Flip-Chip Bonding for Monolithic of Matrix-Addressable GaN-Based Micro-Light-Emitting Diodes Array

Authors: Chien-Ju Chen, Chia-Jui Yu, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu

Abstract:

A 64 × 64 GaN-based micro-light-emitting diode array (μLEDA) with 20 μm in pixel size and 40 μm in pitch by flip-chip bonding (FCB) is demonstrated in this study. Besides, an underfilling (UF) technology is applied to the process for improving the uniformity of device. With those configurations, good characteristics are presented, operation voltage and series resistance of a pixel in the 450 nm flip chip μLEDA are 2.89 V and 1077Ω (4.3 mΩ-cm²) at 25 A/cm², respectively. The μLEDA can sustain higher current density compared to conventional LED, and the power of the device is 9.5 μW at 100 μA and 0.42 mW at 20 mA.

Keywords: GaN, micro-light-emitting diode array(μLEDA), flip-chip bonding, underfilling

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4658 Relative Intensity Noise of Vertical-Cavity Surface-Emitting Lasers Subject to Variable Polarization-Optical Feedback

Authors: Salam Nazhan Ahmed

Abstract:

Influence of variable polarization angle (θp) of optical feedback on the Relative Intensity Noise (RIN) of a Vertical-Cavity Surface-Emitting Laser (VCSEL) has been experimentally investigated. The RIN is a minimum at θp = 0° for the dominant polarization mode (XP), and at θp = 90° for the suppressed polarization mode (YP) of VCSEL. Furthermore, the RIN of the XP mode increases rapidly with increasing θp, while for the YP mode, it increases slightly to θp = 45° and decreases for angles greater than 45°.

Keywords: lasers, vertical-cavity surface-emitting lasers, optical switching, optical polarization feedback, relative intensity noise

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4657 Performance Analysis of Vertical Cavity Surface Emitting Laser and Distributed Feedback Laser for Community Access Television

Authors: Ashima Rai

Abstract:

CATV transmission systems have altered from old cable based one-way analog video transmission to two ways hybrid fiber transmission. The use of optical fiber reduces the RF amplifiers in the transmission, high transmission power or lower fiber transmission losses are required to increase system capability. This paper evaluates and compares Distributed Feedback (DFB) laser and Vertical Cavity Surface Emitting Laser (VCSEL) for CATV transmission. The simulation results exhibit the better performer among both lasers taking into consideration the parameters chosen for evaluation.

Keywords: Distributed Feedback (DFB), Vertical Cavity Surface Emitting Laser (VCSEL), Community Access Television (CATV), Composite Second Order (CSO), Composite Triple Beat (CTB), RF

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4656 Modeling and Characterization of Organic LED

Authors: Bouanati Sidi Mohammed, N. E. Chabane Sari, Mostefa Kara Selma

Abstract:

It is well-known that Organic light emitting diodes (OLEDs) are attracting great interest in the display technology industry due to their many advantages, such as low price of manufacturing, large-area of electroluminescent display, various colors of emission included white light. Recently, there has been much progress in understanding the device physics of OLEDs and their basic operating principles. In OLEDs, Light emitting is the result of the recombination of electron and hole in light emitting layer, which are injected from cathode and anode. For improve luminescence efficiency, it is needed that hole and electron pairs exist affluently and equally and recombine swiftly in the emitting layer. The aim of this paper is to modeling polymer LED and OLED made with small molecules for studying the electrical and optical characteristics. The first simulation structures used in this paper is a mono layer device; typically consisting of the poly (2-methoxy-5(2’-ethyl) hexoxy-phenylenevinylene) (MEH-PPV) polymer sandwiched between an anode usually an indium tin oxide (ITO) substrate, and a cathode, such as Al. In the second structure we replace MEH-PPV by tris (8-hydroxyquinolinato) aluminum (Alq3). We choose MEH-PPV because of it's solubility in common organic solvents, in conjunction with a low operating voltage for light emission and relatively high conversion efficiency and Alq3 because it is one of the most important host materials used in OLEDs. In this simulation, the Poole-Frenkel- like mobility model and the Langevin bimolecular recombination model have been used as the transport and recombination mechanism. These models are enabled in ATLAS -SILVACO software. The influence of doping and thickness on I(V) characteristics and luminescence, are reported.

Keywords: organic light emitting diode, polymer lignt emitting diode, organic materials, hexoxy-phenylenevinylene

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4655 Water Vapor Oxidization of NiO for a Hole Transport Layer in All Inorganic QD-LED

Authors: Jaeun Park, Daekyoung Kim, Ho Kyoon Chung, Heeyeop Chae

Abstract:

Quantum dots light-emitting diodes (QD-LEDs) have been considered as the next generation display and lighting devices due to their excellent color purity, photo-stability solution process possibility and good device stability. Currently typical quantum dot light emitting diodes contain organic layers such as PEDOT:PSS and PVK for charge transport layers. To make quantum dot light emitting diodes (QD-LED) more stable, it is required to replace those acidic and relatively unstable organic charge transport layers with inorganic materials. Therefore all inorganic and solution processed quantum dot light emitting diodes can potentially be a solution to stable and cost-effective display devices. We studied solution processed NiO films to replace organic charge transport layers that are required for stable all-inorganic based light emitting diodes. The transition metal oxides can be made by various vacuum and solution processes, but the solution processes are considered more cost-effective than vacuum processes. In this work we investigated solution processed NiOx for a hole transport layer (HTL). NiOx, has valence band energy levels of 5.3eV and they are easy to make sol-gel solutions. Water vapor oxidation process was developed and applied to solution processed all-inorganic QD-LED. Turn-on voltage, luminance and current efficiency of QD in this work were 5V, 1800Cd/m2 and 0.5Cd/A, respectively.

Keywords: QD-LED, metal oxide solution, NiO, all-inorganic QD-LED device

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4654 Development of a Laboratory Laser-Produced Plasma “Water Window” X-Ray Source for Radiobiology Experiments

Authors: Daniel Adjei, Mesfin Getachew Ayele, Przemyslaw Wachulak, Andrzej Bartnik, Luděk Vyšín, Henryk Fiedorowicz, Inam Ul Ahad, Lukasz Wegrzynski, Anna Wiechecka, Janusz Lekki, Wojciech M. Kwiatek

Abstract:

Laser produced plasma light sources, emitting high intensity pulses of X-rays, delivering high doses are useful to understand the mechanisms of high dose effects on biological samples. In this study, a desk-top laser plasma soft X-ray source, developed for radio biology research, is presented. The source is based on a double-stream gas puff target, irradiated with a commercial Nd:YAG laser (EKSPLA), which generates laser pulses of 4 ns time duration and energy up to 800 mJ at 10 Hz repetition rate. The source has been optimized for maximum emission in the “water window” wavelength range from 2.3 nm to 4.4 nm by using pure gas (argon, nitrogen and krypton) and spectral filtering. Results of the source characterization measurements and dosimetry of the produced soft X-ray radiation are shown and discussed. The high brightness of the laser produced plasma soft X-ray source and the low penetration depth of the produced X-ray radiation in biological specimen allows a high dose rate to be delivered to the specimen of over 28 Gy/shot; and 280 Gy/s at the maximum repetition rate of the laser system. The source has a unique capability for irradiation of cells with high pulse dose both in vacuum and He-environment. Demonstration of the source to induce DNA double- and single strand breaks will be discussed.

Keywords: laser produced plasma, soft X-rays, radio biology experiments, dosimetry

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4653 Preparation of Hyperbranched Polymers for Application in Light Emitting Diodes

Authors: Amal Aljohani, Ahmed Iraqi

Abstract:

Emitting materials with thermally activated delayed fluorescence (TADF) properties as the third generation of organic light-emitting diodes (OLEDs) have received much attention as a modern class of highly efficient emitters because such properties enable the harvesting of both singlet and triplet excitons in EL applications without the doping with complexes of scarce noble metals such as platinum and iridium. Improved molecular design of TADF molecules and applied materials exhibiting internal electroluminescence (EL) with quantum efficiencies of nearly 100% has been achieved being. A2B3 hyperbranched polymers based on new derivatives containing silane core units serving as host materials for thermally activated delayed fluorescence (TADF) guest molecules have been designed and synthesized through several steps, including the synthesis of tetrakis(4-bromophenyl)silane, bis(4-(9H-carbazol-9-yl)phenyl)bis(4-bromophenyl)silane,bis(4-(9H-carbazol-9 yl)phenyl)bis(4-methoxyphenyl)silane and bis(4-(9H-carbazol-9-yl)phenyl)bis(4hydroxyphenyl)silane. This monomer has been used successfully used along with 1,1,1-tri-(p-tosyloxymethyl)-propane to prepare A2B3 hyperbranched polymers via step-growth polymerization. The characterization and the properties of these new host polymers will be presented and discussed in this contribution.

Keywords: carbazole, organic light emitting diodes, thermally activated delayed fluorescence, donor-acceptor, host and guest interaction

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4652 High-Frequency Modulation of Light-Emitting Diodes for New Ultraviolet Communications

Authors: Meng-Chyi Wu, Bonn Lin, Jyun-Hao Liao, Chein-Ju Chen, Yu-Cheng Jhuang, Mau-Phon Houng, Fang-Hsing Wang, Min-Chu Liu, Cheng-Fu Yang, Cheng-Shong Hong

Abstract:

Since the use of wireless communications has become critical nowadays, the available RF spectrum has become limited. Ultraviolet (UV) communication system can alleviate the spectrum constraint making UV communication system a potential alternative to future communication demands. Also, UV links can provide faster communication rate and can be used in combination with existing RF communication links, providing new communications diversity with higher user capacity. The UV region of electromagnetic spectrum has been of interest to detector, imaging and communication technologies because the stratospheric ozone layer effectively absorbs some solar UV radiation from reaching the earth surface. The wavebands where most of UV radiation is absorbed by the ozone are commonly known as the solar blind region. By operating in UV-C band (200-280 nm) the communication system can minimize the transmission power consumption since it will have less radiation noise. UV communication uses the UV ray as the medium. Electric signal is carried on this band after being modulated and then be transmitted within the atmosphere as channel. Though the background noise of UV-C communication is very low owing to the solar-blind feature, it leads to a large propagation loss. The 370 nm UV provides a much lower propagation loss than that the UV-C does and the recent device technology for UV source on this band is more mature. The fabricated 370 nm AlGaN light-emitting diodes (LEDs) with an aperture size of 45 m exhibit a modulation bandwidth of 165 MHz at 30 mA and a high power of 7 W/cm2 at 230 A/cm2. In order to solve the problem of low power in single UV LED, a UV LED array is presented in.

Keywords: ultraviolet (UV) communication, light-emitting diodes (LEDs), modulation bandwidth, LED array, 370 nm

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4651 Lanthanide Incorporated Dendron Based White Light Emitting Material

Authors: Prashant Kumar, Edamana Prasad

Abstract:

The White light emitting material has an emerging field in recent years due to their widespread application in the field of optoelectronics and cellular display. In the present study, we have achieved white light emission in gel medium through partial resonance energy transfer from different donors (naphthalene, phenanthrene, and pyrene) to lanthanides {Eu(III) and Tb(III)}. The gel was formed by the self- assembly of glucose cored poly(aryl ether) dendrons in DMSO-Water mixture (1:9 v/v). The white light emission was further confirmed by the CIE coordinates (Commission Internationale d’ Eclairage). Moreover, we have developed three different white light emitting system by utilizing three different donor moiety namely, naphthalene-Tb(III)-Eu(III) {I}, phenanthrene-Tb(III)-Eu(III) {II}, and pyrene-Tb(III)-Eu(III) {III}. The CIE coordinates for I, II and III were (0.35, 0.37), (0.33, 0.32) and (0.35, 0.33) respectively. Furthermore, we have investigated the energy transfer from different donors (phenanthrene, naphthalene, and pyrene) to lanthanide {Eu(III)}. The efficiency of energy transfer from phenanthrene-Eu(III), naphthalene-Eu(III) and pyrene-Eu(III) systems was 11.9%, 3.9%, and 3.6%, respectively. Detailed mechanistic aspects will be displayed in the poster.

Keywords: dendron, lanthanide, resonance energy transfer, white light emission

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4650 An Efficient Emitting Supramolecular Material Derived from Calixarene: Synthesis, Optical and Electrochemical Features

Authors: Serkan Sayin, Songul F. Varol

Abstract:

High attention on the organic light-emitting diodes has been paid since their efficient properties in the flat panel displays, and solid-state lighting was realized. Because of their high efficient electroluminescence, brightness and providing eminent in the emission range, organic light emitting diodes have been preferred a material compared with the other materials consisting of the liquid crystal. Calixarenes obtained from the reaction of p-tert-butyl phenol and formaldehyde in a suitable base have been potentially used in various research area such as catalysis, enzyme immobilization, and applications, ion carrier, sensors, nanoscience, etc. In addition, their tremendous frameworks, as well as their easily functionalization, make them an effective candidate in the applied chemistry. Herein, a calix[4]arene derivative has been synthesized, and its structure has been fully characterized using Fourier Transform Infrared Spectrophotometer (FTIR), proton nuclear magnetic resonance (¹H-NMR), carbon-13 nuclear magnetic resonance (¹³C-NMR), liquid chromatography-mass spectrometry (LC-MS), and elemental analysis techniques. The calixarene derivative has been employed as an emitting layer in the fabrication of the organic light-emitting diodes. The optical and electrochemical features of calixarane-contained organic light-emitting diodes (Clx-OLED) have been also performed. The results showed that Clx-OLED exhibited blue emission and high external quantum efficacy. As a conclusion obtained results attributed that the synthesized calixarane derivative is a promising chromophore with efficient fluorescent quantum yield that provides it an attractive candidate for fabricating effective materials for fluorescent probes and labeling studies. This study was financially supported by the Scientific and Technological Research Council of Turkey (TUBITAK Grant no. 117Z402).

Keywords: calixarene, OLED, supramolecular chemistry, synthesis

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4649 Improved Small-Signal Characteristics of Infrared 850 nm Top-Emitting Vertical-Cavity Lasers

Authors: Ahmad Al-Omari, Osama Khreis, Ahmad M. K. Dagamseh, Abdullah Ababneh, Kevin Lear

Abstract:

High-speed infrared vertical-cavity surface-emitting laser diodes (VCSELs) with Cu-plated heat sinks were fabricated and tested. VCSELs with 10 mm aperture diameter and 4 mm of electroplated copper demonstrated a -3dB modulation bandwidth (f-3dB) of 14 GHz and a resonance frequency (fR) of 9.5 GHz at a bias current density (Jbias) of only 4.3 kA/cm2, which corresponds to an improved f-3dB2/Jbias ratio of 44 GHz2/kA/cm2. At higher and lower bias current densities, the f-3dB2/ Jbias ratio decreased to about 30 GHz2/kA/cm2 and 18 GHz2/kA/cm2, respectively. Examination of the analogue modulation response demonstrated that the presented VCSELs displayed a steady f-3dB/ fR ratio of 1.41±10% over the whole range of the bias current (1.3Ith to 6.2Ith). The devices also demonstrated a maximum modulation bandwidth (f-3dB max) of more than 16 GHz at a bias current less than the industrial bias current standard for reliability by 25%.

Keywords: current density, high-speed VCSELs, modulation bandwidth, small-signal characteristics, thermal impedance, vertical-cavity surface-emitting lasers

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4648 Polyethylenimine-Ethoxylated Dual Interfacial Layers for High-Efficient Quantum Dot Light-Emitting Diodes

Authors: Woosuk Lee

Abstract:

We controlled the electron injection rate in inverted quantum dot light-emitting diode (QLED) by inserting PEIE layer between ZnO electron transport layer(ETL) and quantum dots(QDs) layer and successfully demonstrated high efficiency of QLEDs. The inverted QLED has the layer structure of ITO(cathode)/ ZnO NPs/PEIE/QDs/PEIE/P-TPD/MoO3/Al(anode). The PEIE between poly-TPD hole transport layer (HTL) and quantum dot emitting layer protects QD EML during HTL coating process and improves the surface morphology. In addition, the hole injection barrier is reduced by upshifting the valence band maximum (VBM) of QDs. An additional layer of PEIE was introduced between ZnO and QD to balance charge within QD emissive layer in device, which serves as an effective electron blocking layer without changing device operating condition such as turn-on voltage and emissive spectra. As a result, the optimized QLED with 5nm PEIE shows a ~36% improved current efficiency and external quantum efficiency (EQE) compared to the QLED without PEIE.(maximum current efficiency, and EQE are achieved 70cd/A and 17.3%, respectively). In particular, the maximum brightness of the optimized QLED dramatically improved by a factor of 2.3 relative to the QLED without PEIE. The main reasons for these QLED performance improvement are due to the suppressing the leakage current across the device and well confined exciton by inserting PEIE layers.

Keywords: quantum dot light-emitting diodes, interfacial layer, charge-injection balance, suppressing QD charging

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4647 N-Type GaN Thinning for Enhancing Light Extraction Efficiency in GaN-Based Thin-Film Flip-Chip Ultraviolet (UV) Light Emitting Diodes (LED)

Authors: Anil Kawan, Soon Jae Yu, Jong Min Park

Abstract:

GaN-based 365 nm wavelength ultraviolet (UV) light emitting diodes (LED) have various applications: curing, molding, purification, deodorization, and disinfection etc. However, their usage is limited by very low output power, because of the light absorption in the GaN layers. In this study, we demonstrate a method utilizing removal of 365 nm absorption layer buffer GaN and thinning the n-type GaN so as to improve the light extraction efficiency of the GaN-based 365 nm UV LED. The UV flip chip LEDs of chip size 1.3 mm x 1.3 mm were fabricated using GaN epilayers on a sapphire substrate. Via-hole n-type contacts and highly reflective Ag metal were used for efficient light extraction. LED wafer was aligned and bonded to AlN carrier wafer. To improve the extraction efficiency of the flip chip LED, sapphire substrate and absorption layer buffer GaN were removed by using laser lift-off and dry etching, respectively. To further increase the extraction efficiency of the LED, exposed n-type GaN thickness was reduced by using inductively coupled plasma etching.

Keywords: extraction efficiency, light emitting diodes, n-GaN thinning, ultraviolet

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4646 Experimental Demonstration of an Ultra-Low Power Vertical-Cavity Surface-Emitting Laser for Optical Power Generation

Authors: S. Nazhan, Hassan K. Al-Musawi, Khalid A. Humood

Abstract:

This paper reports on an experimental investigation into the influence of current modulation on the properties of a vertical-cavity surface-emitting laser (VCSEL) with a direct square wave modulation. The optical output power response, as a function of the pumping current, modulation frequency, and amplitude, is measured for an 850 nm VCSEL. We demonstrate that modulation frequency and amplitude play important roles in reducing the VCSEL’s power consumption for optical generation. Indeed, even when the biasing current is below the static threshold, the VCSEL emits optical power under the square wave modulation. The power consumed by the device to generate light is significantly reduced to > 50%, which is below the threshold current, in response to both the modulation frequency and amplitude. An operating VCSEL device at low power is very desirable for less thermal effects, which are essential for a high-speed modulation bandwidth.

Keywords: vertical-cavity surface-emitting lasers, VCSELs, optical power generation, power consumption, square wave modulation

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4645 Design and Analysis of Metamaterial Based Vertical Cavity Surface Emitting Laser

Authors: Ishraq M. Anjum

Abstract:

Distributed Bragg reflectors are used in vertical-cavity surface-emitting lasers (VCSELs) in order to achieve very high reflectivity. Use of metamaterial in place of distributed Bragg reflector can reduce the device size significantly. A silicon-based metamaterial near perfect reflector is designed to be used in place of distributed Bragg reflectors in VCSELs. Mie resonance in dielectric microparticles is exploited in order to design the metamaterial. A reflectivity of 98.31% is achieved using finite-difference time-domain method. An 808nm double intra-cavity contacted VCSEL structure with 1.5 λ cavity is proposed using this metamaterial near perfect reflector. The active region is designed to be composed of seven GaAs/AlGaAs quantum wells. Upon numerical investigation of the designed VCSEL structure, the threshold current is found to be 2.96 mA at an aperture of 40 square micrometers and the maximum output power is found to be 71 mW at a current of 141 mA. Miniaturization of conventional VCSELs is possible using this design.

Keywords: GaAs, LASER, metamaterial, VCSEL, vertical cavity surface emitting laser

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4644 White Light Emission through Downconversion of Terbium and Europium Doped CEF3 Nanophosphors

Authors: Mohit Kalra, Varun S., Mayuri Gandhi

Abstract:

CeF3 nanophosphors has been extensively investigated in the recent years for lighting and numerous bio-applications. Down conversion emissions in CeF3:Eu3+/Tb3+ phosphors were studied with the aim of obtaining a white light emitting composition, by a simple co-precipitation method. The material was characterized by X-ray Diffraction (XRD), High Resolution Transmission Electron Microscopy (HR-TEM), Fourier Transform Infrared Spectroscopy (FT-IR) and Photoluminescence (PL). Uniformly distributed nanoparticles were obtained with an average particle size 8-10 nm. Different doping concentrations were performed and fluorescence study was carried out to optimize the dopants concentration for maximum luminescence intensity. The steady state and time resolved luminescence studies confirmed efficient energy transfer from the host to activator ions. Different concentrations of Tb 3+, Eu 3+ were doped to achieve a white light emitting phosphor for UV-based Light Emitting Diodes (LEDs). The nanoparticles showed characteristic emission of respective dopants (Eu 3+, Tb3+) when excited at the 4f→5d transition of Ce3+. The chromaticity coordinates for these samples were calculated and the CeF3 doped with Eu 3+ and Tb3+ gave an emission very close to white light. These materials may find its applications in optoelectronics and various bio applications.

Keywords: white light down-conversion, nanophosphors, LEDs, rare earth, cerium fluoride, lanthanides

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4643 Microwave Single Photon Source Using Landau-Zener Transitions

Authors: Siddhi Khaire, Samarth Hawaldar, Baladitya Suri

Abstract:

As efforts towards quantum communication advance, the need for single photon sources becomes imminent. Due to the extremely low energy of a single microwave photon, efforts to build single photon sources and detectors in the microwave range are relatively recent. We plan to use a Cooper Pair Box (CPB) that has a ‘sweet-spot’ where the two energy levels have minimal separation. Moreover, these qubits have fairly large anharmonicity making them close to ideal two-level systems. If the external gate voltage of these qubits is varied rapidly while passing through the sweet-spot, due to Landau-Zener effect, the qubit can be excited almost deterministically. The rapid change of the gate control voltage through the sweet spot induces a non-adiabatic population transfer from the ground to the excited state. The qubit eventually decays into the emission line emitting a single photon. The advantage of this setup is that the qubit can be excited without any coherent microwave excitation, thereby effectively increasing the usable source efficiency due to the absence of control pulse microwave photons. Since the probability of a Landau-Zener transition can be made almost close to unity by the appropriate design of parameters, this source behaves as an on-demand source of single microwave photons. The large anharmonicity of the CPB also ensures that only one excited state is involved in the transition and multiple photon output is highly improbable. Such a system has so far not been implemented and would find many applications in the areas of quantum optics, quantum computation as well as quantum communication.

Keywords: quantum computing, quantum communication, quantum optics, superconducting qubits, flux qubit, charge qubit, microwave single photon source, quantum information processing

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4642 Forster Energy Transfer and Optoelectronic Properties of (PFO/TiO2)/Fluorol 7GA Hybrid Thin Films

Authors: Bandar Ali Al-Asbahi, Mohammad Hafizuddin Haji Jumali

Abstract:

Forster energy transfer between poly (9,9'-di-n-octylfluorenyl-2,7-diyl) (PFO)/TiO2 nanoparticles (NPs) as a donor and Fluorol 7GA as an acceptor has been studied. The energy transfer parameters were calculated by using mathematical models. The dominant mechanism responsible for the energy transfer between the donor and acceptor molecules was Forster-type, as evidenced by large values of quenching rate constant, energy transfer rate constant and critical distance of energy transfer. Moreover, these composites which were used as an emissive layer in organic light emitting diodes, were investigated in terms of current density–voltage and electroluminescence spectra.

Keywords: energy transfer parameters, forster-type, electroluminescence, organic light emitting diodes

Procedia PDF Downloads 389
4641 Temperature-Stable High-Speed Vertical-Cavity Surface-Emitting Lasers with Strong Carrier Confinement

Authors: Yun Sun, Meng Xun, Jingtao Zhou, Ming Li, Qiang Kan, Zhi Jin, Xinyu Liu, Dexin Wu

Abstract:

Higher speed short-wavelength vertical-cavity surface-emitting lasers (VCSELs) working at high temperature are required for future optical interconnects. In this work, the high-speed 850 nm VCSELs are designed, fabricated and characterized. The temperature dependent static and dynamic performance of devices are investigated by using current-power-voltage and small signal modulation measurements. Temperature-stable high-speed properties are obtained by employing highly strained multiple quantum wells and short cavity length of half wavelength. The temperature dependent photon lifetimes and carrier radiative times are determined from damping factor and resonance frequency obtained by fitting the intrinsic optical bandwidth with the two-pole transfer function. In addition, an analytical theoretical model including the strain effect is development based on model-solid theory. The calculation results indicate that the better high temperature performance of VCSELs can be attributed to the strong confinement of holes in the quantum wells leading to enhancement of the carrier transit time.

Keywords: vertical cavity surface emitting lasers, high speed modulation, optical interconnects, semiconductor lasers

Procedia PDF Downloads 83
4640 Study on Beta-Ray Detection System in Water Using a MCNP Simulation

Authors: Ki Hyun Park, Hye Min Park, Jeong Ho Kim, Chan Jong Park, Koan Sik Joo

Abstract:

In the modern days, the use of radioactive substances is on the rise in the areas like chemical weaponry, industrial usage, and power plants. Although there are various technologies available to detect and monitor radioactive substances in the air, the technologies to detect underwater radioactive substances are scarce. In this study, computer simulation of the underwater detection system measuring beta-ray, a radioactive substance, has been done through MCNP. CaF₂, YAP(Ce) and YAG(Ce) have been used in the computer simulation to detect beta-ray as scintillator. Also, the source used in the computer simulation is Sr-90 and Y-90, both of them emitting only pure beta-ray. The distance between the source and the detector was shifted from 1mm to 10mm by 1 mm in the computer simulation. The result indicated that Sr-90 was impossible to measure below 1 mm since its emission energy is low while Y-90 was able to be measured up to 10mm underwater. In addition, the detector designed with CaF₂ had the highest efficiency among 3 scintillators used in the computer simulation. Since it was possible to verify the detectable range and the detection efficiency according to modeling through MCNP simulation, it is expected that such result will reduce the time and cost in building the actual beta-ray detector and evaluating its performances, thereby contributing the research and development.

Keywords: Beta-ray, CaF₂, detector, MCNP simulation, scintillator

Procedia PDF Downloads 451
4639 Optical Design and Modeling of Micro Light-Emitting Diodes for Display Applications

Authors: Chaya B. M., C. Dhanush, Inti Sai Srikar, Akula Pavan Parvatalu, Chirag Gowda R

Abstract:

Recently, there has been a lot of interest in µ-LED technology because of its exceptional qualities, including auto emission, high visibility, low consumption of power, rapid response and longevity. Light-emitting diodes (LED) using III-nitride, such as lighting sources, visible light communication (VLC) devices, and high-power devices, are finding increasing use as miniaturization technology advances. The use of micro-LED displays in place of traditional display technologies like liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs) is one of the most prominent recent advances, which may even represent the next generation of displays. The development of fully integrated, multifunctional devices and the incorporation of extra capabilities into micro-LED displays, such as sensing, light detection, and solar cells, are the pillars of advanced technology. Due to the wide range of applications for micro-LED technology, the effectiveness and dependability of these devices in numerous harsh conditions are becoming increasingly important. Enough research has been conducted to overcome the under-effectiveness of micro-LED devices. In this paper, different Micro LED design structures are proposed in order to achieve optimized optical properties. In order to attain improved external quantum efficiency (EQE), devices' light extraction efficiency (LEE) has also been boosted.

Keywords: finite difference time domain, light out coupling efficiency, far field intensity, power density, quantum efficiency, flat panel displays

Procedia PDF Downloads 46
4638 A Case Study of Open Source Development Practices within a Large Company Setting

Authors: Alma Orucevic-Alagic, Martin Höst

Abstract:

Open source communities have demonstrated that complex and enterprise grade software can be produced, supported, and maintained by self-organizing groups of developers using primarily electronic form of communication. Due to the inherent nature of open source development, a specific set of open source software development practices has evolved. While there is an ongoing research on the topic of applicability of open source development practices within a company setting, still little is known about their benefits and challenges. The objective of this research is to understand if and to what degree open source development practices observed within a mature open source community are aligned with development practices within a large software and hardware company setting. For the purpose of this case study a set of open source development practices that are present in a mature open source community has been identified. Then, development practices of a large, international, hardware and software company based in Sweden were assessed and compared to the identified open source community practices. It is shown that there are many similarities between a mature open source community and a large company setting in regard to software development practices. We also identify practices that exist in open source communities and that are not standard within a company setting, but whose implementation can result in an improved software development efficiency within the company setting.

Keywords: development practices, open source software, innersource, closed open source

Procedia PDF Downloads 510
4637 An Introduction to the Radiation-Thrust Based on Alpha Decay and Spontaneous Fission

Authors: Shiyi He, Yan Xia, Xiaoping Ouyang, Liang Chen, Zhongbing Zhang, Jinlu Ruan

Abstract:

As the key system of the spacecraft, various propelling system have been developing rapidly, including ion thrust, laser thrust, solar sail and other micro-thrusters. However, there still are some shortages in these systems. The ion thruster requires the high-voltage or magnetic field to accelerate, resulting in extra system, heavy quantity and large volume. The laser thrust now is mostly ground-based and providing pulse thrust, restraint by the station distribution and the capacity of laser. The thrust direction of solar sail is limited to its relative position with the Sun, so it is hard to propel toward the Sun or adjust in the shadow.In this paper, a novel nuclear thruster based on alpha decay and spontaneous fission is proposed and the principle of this radiation-thrust with alpha particle has been expounded. Radioactive materials with different released energy, such as 210Po with 5.4MeV and 238Pu with 5.29MeV, attached to a metal film will provides various thrust among 0.02-5uN/cm2. With this repulsive force, radiation is able to be a power source. With the advantages of low system quantity, high accuracy and long active time, the radiation thrust is promising in the field of space debris removal, orbit control of nano-satellite array and deep space exploration. To do further study, a formula lead to the amplitude and direction of thrust by the released energy and decay coefficient is set up. With the initial formula, the alpha radiation elements with the half life period longer than a hundred days are calculated and listed. As the alpha particles emit continuously, the residual charge in metal film grows and affects the emitting energy distribution of alpha particles. With the residual charge or extra electromagnetic field, the emitting of alpha particles performs differently and is analyzed in this paper. Furthermore, three more complex situations are discussed. Radiation element generating alpha particles with several energies in different intensity, mixture of various radiation elements, and cascaded alpha decay are studied respectively. In combined way, it is more efficient and flexible to adjust the thrust amplitude. The propelling model of the spontaneous fission is similar with the one of alpha decay, which has a more complex angular distribution. A new quasi-sphere space propelling system based on the radiation-thrust has been introduced, as well as the collecting and processing system of excess charge and reaction heat. The energy and spatial angular distribution of emitting alpha particles on unit area and certain propelling system have been studied. As the alpha particles are easily losing energy and self-absorb, the distribution is not the simple stacking of each nuclide. With the change of the amplitude and angel of radiation-thrust, orbital variation strategy on space debris removal is shown and optimized.

Keywords: alpha decay, angular distribution, emitting energy, orbital variation, radiation-thruster

Procedia PDF Downloads 157
4636 A Simple Light-Outcoupling Enhancement Method for Organic Light-Emitting Diodes

Authors: Ho-Nyeon Lee

Abstract:

We propose to use a gradual-refractive-index dielectric (GRID) as a simple and efficient light-outcoupling method for organic light-emitting diodes (OLEDs). Using the simple GRIDs, we could improve the light outcoupling efficiency of OLEDs rather than relying on difficult nano-patterning processes. Through numerical simulations using a finite-difference time-domain (FDTD) method, the feasibility of the GRID structure was examined and the design parameters were extracted. The outcoupling enhancement effects due to the GRIDs were proved through severe experimental works. The GRIDs were adapted to bottom-emission OLEDs and top-emission OLEDs. For bottom-emission OLEDs, the efficiency was improved more than 20%, and for top-emission OLEDs, more than 40%. The detailed numerical and experimental results will be presented at the conference site.

Keywords: efficiency, GRID, light outcoupling, OLED

Procedia PDF Downloads 383