Search results for: semiconductor

Authors: Goban Kumar Panneer Selvam

Abstract:

In past years, there is lots of death caused due to harmful gases. So its very important to monitor harmful gases for human safety, and semiconductor material play important role in producing effective gas sensors.A novel solvothermal synthesis method based on sol-gel processing was prepared to deposit tin oxide thin films on glass substrate at high temperature for gas sensing application. The structure and morphology of tin oxide were analyzed by X-ray diffraction (XRD), Fourier transforms infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The SEM analysis of how spheres shape in tin oxide nanoparticles. The structure characterization of tin oxide studied by X-ray diffraction shows 8.95 nm (calculated by sheers equation). The UV visible spectroscopy indicated a maximum absorption band shown at 390 nm. Further dope tin oxide with selected metals to attain maximum sensitivity using dip coating technique with different immersion and sensing characterization are measured.

Keywords: tin oxide, gas sensor, chlorine free, sensitivity, crystalline size

Procedia PDF Downloads 146

Authors: L. Giraudet, O. Simonetti, G. de Tournadre, N. Dumelié, B. Clarenc, F. Reisdorffer

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In this paper we intend to give a comprehensive view of the saturation misbehavior of thin film transistors (TFTs) based on disordered semiconductors, such as most organic TFTs, and its link to the field activation of the mobility. Experimental evidence of the field activation of the mobility is given for disordered semiconductor based TFTs, when reducing the gate length. Saturation misbehavior is observed simultaneously. Advanced transport models have been implemented in a quasi-2D numerical TFT simulation software. From the numerical simulations it is clearly established that field activation of the mobility alone cannot explain the saturation misbehavior. Evidence is given that high longitudinal field gradient at the drain end of the channel is responsible for an excess charge accumulation, preventing saturation. The two combined effects allow reproducing the experimental output characteristics of short channel TFTs, with S-shaped characteristics and saturation failure.

Keywords: mobility field activation, numerical simulation, OTFT, saturation failure

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Authors: Temesgen Geremew

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ZnO is currently receiving a lot of attention in the semiconductor industry due to its unique characteristics. ZnO is widely used in solar cells, heat-reflecting glasses, optoelectronic bias, and detectors. In this composition, we provide an overview of the ZnO thin flicks' packages, methods of characterization, and implicit operations. They consist of Transmission spectroscopy, Raman spectroscopy, Field emigration surveying electron microscopy, and X-ray diffraction. This review content also demonstrates how ZnO thin flicks function in electrical components for piezoelectric bias, optoelectronics, detectors, and renewable energy sources. Zinc oxide (ZnO) thin films offer a captivating tapestry of possibilities due to their unique blend of electrical, optical, and mechanical properties. This review delves into the realm of their potential applications and future prospects, highlighting the pivotal contributions of research endeavors aimed at tailoring their functionalities.

Keywords: Zinc oxide, raman spectroscopy, thin films, piezoelectric devices

Procedia PDF Downloads 84

Authors: Kaige Shi, Chao Jiang, Xin Li

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The swirl gripper is an electrically activated noncontact handling device that uses swirling airflow to generate a lifting force. This force can be used to pick up a workpiece placed underneath the swirl gripper without any contact. It is applicable, for example, in the semiconductor wafer production line, where contact must be avoided during the handling and moving of a workpiece to minimize damage. When a workpiece levitates underneath a swirl gripper, the gap height between them is crucial for safe handling. Therefore, in this paper, we propose a method to estimate the levitation gap height by detecting pressure at two points. The method is based on theoretical model of the swirl gripper, and has been experimentally verified. Furthermore, the force between the gripper and the workpiece can also be estimated using the detected pressure. As a result, the nonlinear relationship between the force and gap height can be linearized by adjusting the rotating speed of the fan in the swirl gripper according to the estimated force and gap height. The linearized relationship is expected to enhance handling stability of the workpiece.

Keywords: swirl gripper, noncontact handling, levitation, gap height estimation

Procedia PDF Downloads 133

Authors: Su Jeong Lee, Tae Il Lee, Jung Han Kim, Chul-Hong Kim, Gee Sung Chae, Jae-Min Myoung

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The contact resistance between source/drain electrodes and semiconductor layer is an important parameter affecting electron transporting performance in the thin film transistor (TFT). In this work, we introduced a transparent and the solution prossable single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle (AZO NP) bilayer electrodes showing low contact resistance with indium-oxide (In2O3) sol gel thin film. By inserting low work function AZO NPs into the interface between the SWCNTs and the In2O3 which has a high energy barrier, we could obtain an electrical Ohmic contact between them. Finally, with the SWCNT-AZO NP bilayer electrodes, we successfully fabricated a TFT showing a field effect mobility of 5.38 cm2/V∙s at 250 °C.

Keywords: single-walled carbon nanotube (SWCNT), Al-doped ZnO (AZO) nanoparticle, contact resistance, thin-film transistor (TFT)

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Authors: R. R. Galiev, I. I. Lykov, A. E. Shitikov, I. A. Bilenko

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Dual-comb interferometry is based on the mixing of two optical frequency combs with slightly different lines spacing which results in the mapping of the optical spectrum into the radio-frequency domain for future digitizing and numerical processing. The dual-comb approach enables diverse applications, including metrology, fast high-precision spectroscopy, and distance range. Ordinary frequency-modulated continuous-wave (FMCW) laser-based Light Identification Detection and Ranging systems (LIDARs) suffer from two main disadvantages: slow and unreliable mechanical, spatial scan and a rather wide linewidth of conventional lasers, which limits speed measurement resolution. Dual-comb distance measurements with Allan deviations down to 12 nanometers at averaging times of 13 microseconds, along with ultrafast ranging at acquisition rates of 100 megahertz, allowing for an in-flight sampling of gun projectiles moving at 150 meters per second, was previously demonstrated. Nevertheless, pump lasers with EDFA amplifiers made the device bulky and expensive. An alternative approach is a direct coupling of the laser to a reference microring cavity. Backscattering can tune the laser to the eigenfrequency of the cavity via the so-called self-injection locked (SIL) effect. Moreover, the nonlinearity of the cavity allows a solitonic frequency comb generation in the very same cavity. In this work, we developed a fully integrated, power-efficient, electrically driven dual-micro comb source based on the semiconductor lasers SIL to high-quality integrated Si3N4 microresonators. We managed to obtain robust 1400-1700 nm combs generation with a 150 GHz or 1 THz lines spacing and measure less than a 1 kHz Lorentzian withs of stable, MHz spaced beat notes in a GHz band using two separated chips, each pumped by its own, self-injection locked laser. A deep investigation of the SIL dynamic allows us to find out the turn-key operation regime even for affordable Fabry-Perot multifrequency lasers used as a pump. It is important that such lasers are usually more powerful than DFB ones, which were also tested in our experiments. In order to test the advantages of the proposed techniques, we experimentally measured a minimum detectable speed of a reflective object. It has been shown that the narrow line of the laser locked to the microresonator provides markedly better velocity accuracy, showing velocity resolution down to 16 nm/s, while the no-SIL diode laser only allowed 160 nm/s with good accuracy. The results obtained are in agreement with the estimations and open up ways to develop LIDARs based on compact and cheap lasers. Our implementation uses affordable components, including semiconductor laser diodes and commercially available silicon nitride photonic circuits with microresonators.

Keywords: dual-comb spectroscopy, LIDAR, optical microresonator, self-injection locking

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Authors: Antonis Constantinides, Christos Yiallouras, Christakis Damianou

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The application of today's semiconductor transistors in high power UHF DVB-T linear amplifiers has evolved significantly by utilizing LDMOS technology. This fact provides engineers with the option to design a single transistor signal amplifier which enables output power and linearity that was unobtainable previously using bipolar junction transistors or later type first generation MOSFETS. The quiescent current stability in terms of thermal variations of the LDMOS guarantees a robust operation in any topology of DVB-T signal amplifiers. Otherwise, progressively uncontrolled heat dissipation enhancement on the LDMOS case can degrade the amplifier’s crucial parameters in regards to the gain, linearity, and RF stability, resulting in dysfunctional operation or a total destruction of the unit. This paper presents one more sophisticated approach from the traditional biasing circuits used so far in LDMOS DVB-T amplifiers. It utilizes a microprocessor control technology, providing stability in topologies where IDQ must be perfectly accurate.

Keywords: LDMOS, amplifier, back-off, bias circuit

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Authors: Isao Tomita

Abstract:

The principle of all-silicon Raman lasers for an output wavelength of 1.3 μm is presented, which employs quasi-phase-matched structures and resonators to enhance the output power. 1.3-μm laser beams for GE-PONs in FTTH systems generated from a silicon device are very important because such a silicon device can be monolithically integrated with the silicon planar lightwave circuits (Si PLCs) used in the GE-PONs. This reduces the device fabrication processes and time and also optical losses at the junctions between optical waveguides of the Si PLCs and Si laser devices when compared with 1.3-μm III-V semiconductor lasers set on the Si PLCs employed at present. We show that the quasi-phase-matched Si Raman laser with resonators can produce about 174 times larger laser power at 1.3 μm (at maximum) than that without resonators for a Si waveguide of Raman gain 20 cm/GW and optical loss 1.2 dB/cm, pumped at power 10 mW, where the length of the waveguide is 3 mm and its cross-section is (1.5 μm)2.

Keywords: All-Silicon Raman Laser, FTTH, GE-PON, Quasi-Phase-Matched Structure, resonator

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Authors: Mohamed E. Harb, Enas Moustafa, Shaker Ebrahim, Moataz Soliman

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In this paper pressure detectors were synthesized and characterized using hybrid perovskite/PVDF composites as an active layer. Methylammonium lead iodide (MAPbI₃) was synthesized from methylammonium iodide (MAI) (CH₃NH₃I) and lead iodide (PbI₂). Composites of perovskite/PVDF using different weight ratio were prepared as the active material. PVDF with weights percentages of 6%, 8%, and 10% was used. All prepared materials were investigated by x-ray diffraction (XRD), Fourier transforms infrared spectrum (FTIR) and scanning electron microscopy (SEM). A Versastat 4 Potentiostat Galvanostat instrument was used to perform the current-voltage characteristics of the fabricated sensors. The pressure sensors exhibited a voltage increase with applying different forces. Also, the current-voltage characteristics (CV) showed different effects with applying forces. So, the results showed a good pressure sensing performance.

Keywords: perovskite semiconductor, hybrid perovskite, PVDF, Pressure sensing

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Authors: Tadayuki Kyoutani, Shigeyuki Haruyama, Ken Kaminishi, Zefry Darmawan

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Japan’s semiconductor industries have developed greatly in recent years. Many were started from a Small and Medium-sized Enterprises (SMEs) that found at a good circumstance and now become the prosperous industries in the world. Sustainable growth factors that support the creation of spirit value inside the Japanese company were strongly embedded through performance. Those factors were not clearly defined among each company. A series of literature research conducted to explore quantitative text mining about the definition of sustainable growth factors. Sustainable criteria were developed from previous research to verify the definition of the factors. A typical frame work was proposed as a systematical approach to develop sustainable growth factor in a specific company. Result of approach was review in certain period shows that factors influenced in sustainable growth was importance for the company to achieve the goal.

Keywords: SME, manufacture, sustainable, growth factor

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Authors: Saleh H. Abud, Z. Hassan, F. K. Yam

Abstract:

Characteristics of MSM photodetector based on a porous In0.08Ga0.92N thin film were reported. Nanoporous structures of n-type In0.08Ga0.92N/AlN/Si thin films were synthesized by photoelectrochemical (PEC) etching at a ratio of 1:4 of HF:C2H5OH solution for 15 min. The structural and optical properties of pre- and post-etched thin films were investigated. Field emission scanning electron microscope and atomic force microscope images showed that the pre-etched thin film has a sufficiently smooth surface over a large region and the roughness increased for porous film. Blue shift has been observed in photoluminescence emission peak at 300 K for porous sample. The photoluminescence intensity of the porous film indicated that the optical properties have been enhanced. A high work function metals (Pt and Ni) were deposited as a metal contact on the porous films. The rise and recovery times of the devices were investigated at 390 nm chopped light. Finally, the sensitivity and quantum efficiency were also studied.

Keywords: porous InGaN, photoluminescence, SMS photodetector, atomic force microscopy

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Authors: Debesh R. Roy

Abstract:

The fundamental issue in understanding the origin and growth mechanism of nanomaterials, from a fundamental unit is a big challenging problem to the scientists. Recently, an immense attention is generated to the researchers for prediction of exceptionally stable atomic cluster units as the building units for future smart materials. The present study is a systematic investigation on the stability and electronic properties of a series of bimetallic (semiconductor-alkaline earth) clusters, viz., BxMg3 (x=1-5) is performed, in search for exceptional and/ or unusual stable motifs. A very popular hybrid exchange-correlation functional, B3LYP as proposed by A. D. Becke along with a higher basis set, viz., 6-31+G[d,p] is employed for this purpose under the density functional formalism. The magic stability among the concerned clusters is explained using the jellium model. It is evident from the present study that the magic stability of B4Mg3 cluster arises due to the jellium shell closure.

Keywords: atomic clusters, density functional theory, jellium model, magic clusters, smart nanomaterials

Procedia PDF Downloads 528

Authors: Yakup Sahin, Naim Suleyman Ting, Ismail Aksoy

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In this paper, a single phase soft switched Zero Voltage Transition and Zero Current Transition (ZVT-ZCT) Power Factor Correction (PFC) boost converter is proposed. In the proposed PFC converter, the main switch turns on with ZVT and turns off with ZCT without any additional voltage or current stresses. Auxiliary switch turns on and off with zero current switching (ZCS). Also, the main diode turns on with zero voltage switching (ZVS) and turns off with ZCS. The proposed converter has features like low cost, simple control and structure. The output current and voltage are controlled by the proposed PFC converter in wide line and load range. The theoretical analysis of converter is clarified and the operating steps are given in detail. The simulation results of converter are obtained for 500 W and 100 kHz. It is observed that the semiconductor devices operate with soft switching (SS) perfectly. So, the switching power losses are minimum. Also, the proposed converter has 0.99 power factor with sinusoidal current shape.

Keywords: power factor correction, zero-voltage transition, zero-current transition, soft switching

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Authors: Amir Sharifi Miavaghi

Abstract:

It is believed recombination mechnisms in graphene-bonded perovskite solar cells based on numerical model in which doped-graphene structures are employed as anode/cathode bonding semiconductor. Moreover, th‌‌‌‌e da‌‌‌‌‌rk-li‌‌‌‌‌ght c‌‌‌‌urrent d‌‌‌‌ens‌‌‌‌ity-vo‌‌‌‌‌‌‌ltage density-voltage cu‌‌‌‌‌‌‌‌‌‌‌rves are investigated by regression analysis. L‌‌‌oss m‌‌‌‌echa‌‌‌‌nisms suc‌‌‌h a‌‌‌‌‌‌s ba‌‌‌‌ck c‌‌‌ontact b‌‌‌‌‌arrier, d‌‌‌‌eep surface defect i‌‌‌‌n t‌‌‌‌‌‌‌he adsorbent la‌‌‌yer is det‌‌‌‌‌ermined b‌‌‌y adapting th‌‌‌e sim‌‌‌‌‌ulated ce‌‌‌‌‌ll perfor‌‌‌‌‌mance to t‌‌‌‌he measure‌‌‌‌ments us‌‌‌‌ing the diffe‌‌‌‌‌‌rential evolu‌‌‌‌‌tion of th‌‌‌‌e global optimization algorithm. T‌‌‌‌he performance of t‌‌‌he c‌‌‌‌ell i‌‌‌‌n the connection proc‌‌‌‌‌ess incl‌‌‌‌‌‌udes J-V cur‌‌‌‌‌‌ves that are examined at di‌‌‌‌‌fferent tempe‌‌‌‌‌‌‌ratures an‌‌‌d op‌‌‌‌en cir‌‌‌‌cuit vol‌‌‌‌tage (V) und‌‌‌‌er differ‌‌‌‌‌ent light intensities as a function of temperature. Ba‌‌‌‌sed o‌‌‌n t‌‌‌he prop‌‌‌‌osed nu‌‌‌‌‌merical mod‌‌‌‌el a‌‌‌‌nd the acquired lo‌‌‌‌ss mecha‌‌‌‌‌‌nisms, our approach can be used to improve the efficiency of the solar cell further. Due to the high demand for alternative energy sources, solar cells are good alternatives for energy storage using the photovoltaic phenomenon.

Keywords: numerical model, recombination mechanism, graphen, perovskite solarcell

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Authors: Isao Tomita

Abstract:

The detection of environmental gases, 12CO_2, 13CO_2, and CH_4, using near-infrared semiconductor lasers with a short laser path length is studied by means of wavelength-modulation spectroscopy. The developed system is compact and has high sensitivity enough to detect the absorption peaks of isotopic 13CO_2 of a 3-% CO_2 gas at 2 um with a path length of 2.4 m, where its peak size is two orders of magnitude smaller than that of the ordinary 12CO_2 peaks. In addition, the detection of 12CO_2 peaks of a 385-ppm (0.0385-%) CO_2 gas in the air is made at 2 um with a path length of 1.4 m. Furthermore, in pursuing the detection of an ancient environmental CH_4 gas confined to a bubble in ice at the polar regions, measurements of the absorption spectrum for a trace gas of CH_4 in a small area are attempted. For a 100-% CH_4 gas trapped in a 1 mm^3 glass container, the absorption peaks of CH_4 are obtained at 1.65 um with a path length of 3 mm, and also the gas pressure is extrapolated from the measured data.

Keywords: environmental gases, Near-Infrared Laser Detection, Wavelength-Modulation Spectroscopy, gas pressure

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Authors: M. Haghnegahdar, G. Naderi, M. H. R. Ghoreishy

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Polypropylene(PP)/Ethylene Propylene Diene Monomer (EPDM) samples (80/20) containing 0, 0.5, 1, 1.5, 2, 2.5, and 3 (expressed in mass fraction) graphene were prepared using melt compounding method to investigate microstructure, mechanical properties, and thermal stability as well as electrical resistance of samples. X-Ray diffraction data confirmed that graphene platelets are well dispersed in PP/EPDM. Mechanical properties such as tensile strength, impact strength and hardness demonstrated increasing trend by graphene loading which exemplifies substantial reinforcing nature of this kind of nano filler and it's good interaction with polymer chains. At the same time it is found that thermo-oxidative degradation of PP/EPDM nanocomposites is noticeably retarded with the increasing of graphene content. Electrical surface resistivity of the nanocomposite was dramatically changed by forming electrical percolation threshold and leads to change electrical behavior from insulator to semiconductor. Furthermore, these results were confirmed by scanning electron microscopy(SEM), dynamic mechanical thermal analysis (DMTA), and transmission electron microscopy (TEM).

Keywords: nanocomposite, graphene, microstructure, mechanical properties

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Authors: Yakup Sahin, Naim Suleyman Ting, Ismail Aksoy

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In this paper, an improved active snubber cell is proposed on account of soft switching (SS) family of pulse width modulation (PWM) DC-DC converters. The improved snubber cell provides zero-voltage transition (ZVT) turn on and zero-current transition (ZCT) turn off for main switch. The snubber cell decreases EMI noise and operates with SS in a wide range of line and load voltages. Besides, all of the semiconductor devices in the converter operate with SS. There is no additional voltage and current stress on the main devices. Additionally, extra voltage stress does not occur on the auxiliary switch and its current stress is acceptable value. The improved converter has a low cost and simple structure. The theoretical analysis of converter is clarified and the operating states are given in detail. The experimental results of converter are obtained by prototype of 500 W and 100 kHz. It is observed that the experimental results and theoretical analysis of converter are suitable with each other perfectly.

Keywords: active snubber cells, DC-DC converters, zero-voltage transition, zero-current transition

Procedia PDF Downloads 1020

Authors: Thierry Pauporté, Sana Koussi, Fabrice Odobel

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The preparation of semiconductor oxide layers and structures by soft techniques is an important field of research. Higher performances are expected from the optimizing of the oxide films and then use of new methods of preparation for a better control of their chemical, morphological, electrical and optical properties. We present the preparation of NiO by electrodeposition from pure polar aprotic medium and mixtures with water. The effect of the solvent, of the electrochemical deposition parameters and post-deposition annealing treatment on the structural, morphological and optical properties of the films is investigated. We remarkably show that the solvent is inserted in the deposited layer and act as a blowing agent, giving rise to mesoporous films after elimination by thermal annealing. These layers of p-type oxide have been successfully used, after sensitization by a dye, in p-type dye-sensitized solar cells. The effects of the solvent on the layer properties and the application of these layers in p-type dye-sensitized solar cells are described.

Keywords: NiO, layer, p-type sensitized solar cells, electrodeposition

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Authors: Muhammad Talal Asghar

Abstract:

The lift-off technique of the photoresist for metal patterning in integrated circuit (IC) packaging has been widely utilized in the field of microelectromechanical systems and semiconductor component manufacturing. The main advantage lies in cost-saving, reduction in complexity, and maturity of the process. The selection of photoresist depends upon many factors such as cost, the thickness of the resist, comfortable and valuable parameters extraction. In the present study, an extremely cheap dry film photoresist E8015 of thickness 38-micrometer is processed for the first time for edge profiling, according to the author's best knowledge. Successful extraction of the helpful parameter range for resist processing is performed. An undercut angle of 66 to 73 degrees is realized by parameter variation like exposure energy and development time. Finally, 10-micrometer thick metallic multilayer aluminum nickel is lifted off on the plain silicon wafer. Possible applications lie in controlled self-propagating reactions within structured metallic multilayer that may be utilized for IC packaging in the future.

Keywords: lift-off, IC packaging, photoresist, multilayer

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Authors: Mahmoud Elrouby

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Metal chalcogenide materials have wide spectrum of properties, for that these materials can be used in electronics, optics, magnetics, solar energy conversion, catalysis, passivation, ion sensing, batteries, and fuel cells. This work aims to, how can obtain these materials via electrochemical methods simply for further applications. The work regards in particular the systems relevant to the sulphur sub-group elements, i.e., sulphur, selenium, and tellurium. The role of electrochemistry in synthesis, development, and characterization of the metal chalcogenide materials and related devices is vital and important. Electrochemical methods as preparation tool offer the advantages of soft chemistry to access bulk, thin, nano film and epitaxial growth of a wide range of alloys and compounds, while as a characterization tool provides exceptional assistance in specifying the physicochemical properties of materials. Moreover, quite important applications and modern devices base their operation on electrochemical principles. Thereupon, our scope in the first place was to organize existing facts on the electrochemistry of metal chalcogenides regarding their synthesis, properties, and applications.

Keywords: electrodeposition, metal chacogenides, semiconductors, applications

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Authors: Delele Worku Ayele, Bing-Joe Hwang

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A method that does not employ hot injection techniques has been developed for the size-tunable synthesis of high-quality CdSe quantum dots (QDs) with a zinc blende structure. In this environmentally benign synthetic route, which uses relatively less toxic precursors, solvents, and capping ligands, CdSe QDs that absorb visible light are obtained. The size of the as-prepared CdSe QDs and, thus, their optical properties can be manipulated by changing the microwave reaction conditions. The QDs are characterized by XRD, TEM, UV-vis, FTIR, time-resolved fluorescence spectroscopy, and fluorescence spectrophotometry. In this approach, the reaction is conducted in open air and at a much lower temperature than in hot injection techniques. The use of microwaves in this process allows for a highly reproducible and effective synthesis protocol that is fully adaptable for mass production and can be easily employed to synthesize a variety of semiconductor QDs with the desired properties. The possible application of the as-prepared CdSe QDs has been also assessed using deposition on TiO2 films.

Keywords: average life time, CdSe QDs, microwave (MW), mass production oleic acid, Na2SeSO3

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Authors: A. Matiushkina, A. Bazhenova, I. Litvinov, E. Kornilova, A. Dubavik, A. Orlova

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Magnetic-luminescent complexes based on superparamagnetic iron oxide nanoparticles (SPIONs) and semiconductor quantum dots (QDs) have been recognized as a new class of materials that have high potential in modern medicine. These materials can serve for theranostics of oncological diseases, and also as a target agent for drug delivery. They combine the qualities characteristic of magnetic nanoparticles, that is, magneto-controllability and the ability to local heating under the influence of an external magnetic field, as well as phosphors, due to luminescence of which, for example, early tumor imaging is possible. The complexity of creating complexes is the energy transfer between particles, which quenches the luminescence of QDs in complexes with SPIONs. In this regard, a relatively new type of alloyed (CdₓZn₁₋ₓSeᵧS₁₋ᵧ)-ZnS QDs is used in our work. The presence of a sufficiently thick gradient semiconductor shell in alloyed QDs makes it possible to reduce the probability of energy transfer from QDs to SPIONs in complexes. At the same time, Forster Resonance Energy Transfer (FRET) is a perfect instrument to confirm the formation of complexes based on QDs and different-type energy acceptors. The formation of complexes in the aprotic bipolar solvent dimethyl sulfoxide is ensured by the coordination of the carboxyl group of the stabilizing QD molecule (L-cysteine) on the surface iron atoms of the SPIONs. An analysis of the photoluminescence (PL) spectra has shown that a sequential increase in the SPIONs concentration in the samples is accompanied by effective quenching of the luminescence of QDs. However, it has not confirmed the formation of complexes yet, because of a decrease in the PL intensity of QDs due to reabsorption of light by SPIONs. Therefore, a study of the PL kinetics of QDs at different SPIONs concentrations was made, which demonstrates that an increase in the SPIONs concentration is accompanied by a symbatic reduction in all characteristic PL decay times. It confirms the FRET from QDs to SPIONs, which indicates the QDs/SPIONs complex formation, rather than a spontaneous aggregation of QDs, which is usually accompanied by a sharp increase in the percentage of the QD fraction with the shortest characteristic PL decay time. The complexes have been studied by the magnetic circular dichroism (MCD) spectroscopy that allows one to estimate the response of magnetic material to the applied magnetic field and also can be useful to check SPIONs aggregation. An analysis of the MCD spectra has shown that the complexes have zero residual magnetization, which is an important factor for using in biomedical applications, and don't contain SPIONs aggregates. Cell penetration, biocompatibility, and stability of QDs/SPIONs complexes in cancer cells have been studied using HeLa cell line. We have found that the complexes penetrate in HeLa cell and don't demonstrate cytotoxic effect up to 25 nM concentration. Our results clearly demonstrate that alloyed (CdₓZn₁₋ₓSeᵧS₁₋ᵧ)-ZnS QDs can be successfully used in complexes with SPIONs reached new hybrid nanostructures, which combine bright luminescence for tumor imaging and magnetic properties for targeted drug delivery and magnetic hyperthermia of tumors. Acknowledgements: This work was supported by the Ministry of Science and Higher Education of Russian Federation, goszadanie no. 2019-1080 and was financially supported by Government of Russian Federation, Grant 08-08.

Keywords: alloyed quantum dots, magnetic circular dichroism, magneto-luminescent complexes, superparamagnetic iron oxide nanoparticles

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Authors: Benjamin Kaufmann, Michael Hofstätter, Nadine Raidl, Peter Supancic

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ZnO varistors are the leading overvoltage protection elements in today’s electronic industry. Their highly non-linear current-voltage characteristics, very fast response times, good reliability and attractive cost of production are unique in this field. There are challenges and questions unsolved. Especially, the urge to create even smaller, versatile and reliable parts, that fit industry’s demands, brings manufacturers to the limits of their abilities. Although, the varistor effect of sintered ZnO is known since the 1960’s, and a lot of work was done on this field to explain the sudden exponential increase of conductivity, the strict dependency on sinter parameters, as well as the influence of the complex microstructure, is not sufficiently understood. For further enhancement and down-scaling of varistors, a better understanding of the microscopic processes is needed. This work attempts a microscopic approach to investigate ZnO varistor performance. In order to cope with the polycrystalline varistor ceramic and in order to account for all possible current paths through the material, a preferably realistic model of the microstructure was set up in the form of three-dimensional networks where every grain has a constant electric potential, and voltage drop occurs only at the grain boundaries. The electro-thermal workload, depending on different grain size distributions, was investigated as well as the influence of the metal-semiconductor contact between the electrodes and the ZnO grains. A number of experimental methods are used, firstly, to feed the simulations with realistic parameters and, secondly, to verify the obtained results. These methods are: a micro 4-point probes method system (M4PPS) to investigate the current-voltage characteristics between single ZnO grains and between ZnO grains and the metal electrode inside the varistor, micro lock-in infrared thermography (MLIRT) to detect current paths, electron back scattering diffraction and piezoresponse force microscopy to determine grain orientations, atom probe to determine atomic substituents, Kelvin probe force microscopy for investigating grain surface potentials. The simulations showed that, within a critical voltage range, the current flow is localized along paths which represent only a tiny part of the available volume. This effect could be observed via MLIRT. Furthermore, the simulations exhibit that the electric power density, which is inversely proportional to the number of active current paths, since this number determines the electrical active volume, is dependent on the grain size distribution. M4PPS measurements showed that the electrode-grain contacts behave like Schottky diodes and are crucial for asymmetric current path development. Furthermore, evaluation of actual data suggests that current flow is influenced by grain orientations. The present results deepen the knowledge of influencing microscopic factors on ZnO varistor performance and can give some recommendations on fabrication for obtaining more reliable ZnO varistors.

Keywords: metal-semiconductor contact, Schottky diode, varistor, zinc oxide

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Authors: Kittipong Tripetch, Nobuhiko Nakano

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Two types of floating active resistors based on a complementary regulated cascode topology with cross-coupled regulated transistors are presented in this paper. The first topology is a high swing complementary regulated cascode active resistor. The second topology is a complementary common gate with a regulated cross coupled transistor. The small-signal input resistances of the floating resistors are derived. Three graphs of the input current versus the input voltage for different aspect ratios are designed and plotted using the Cadence Spectre 0.18-µm Rohm Semiconductor process. The total harmonic distortion graphs are plotted for three different aspect ratios with different input-voltage amplitudes and different input frequencies. From the simulation results, it is observed that a resistance of approximately 8.52 MΩ can be obtained from supply voltage at  ±0.9 V.

Keywords: floating active resistor, complementary common gate, complementary regulated cascode, current mirror

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Authors: Arnab Majumdar, Srimani Sen

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In this paper, a vivid simulated study has been made on 35 GHz Ka-band window frequency in order to judge and compare the DC and high frequency properties of cubic ZnB-GaN with the existing hexagonal 4H-SiC. A flat profile p⁺pnn⁺ DDR structure of impatt is chosen and is optimized at a particular bias current density with respect to efficiency and output power taking into consideration the effect of mobile space charge also. The simulated results obtained reveals the strong potentiality of impatts based on both cubic ZnB-GaN and hexagonal 4H-SiC. The DC-to-millimeter wave conversion efficiency for cubic ZnB-GaN impatt obtained is 50% with an estimated output power of 2.83 W at an optimized bias current density of 2.5×10⁸ A/m². The conversion efficiency and estimated output power in case of hexagonal 4H-SiC impatt obtained is 22.34% and 40 W respectively at an optimum bias current density of 0.06×10⁸ A/m².

Keywords: cubic ZnB-GaN, hexagonal 4H-SiC, double drift impatt diode, millimetre wave, optimised bias current density, wide band gap semiconductor

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Authors: S. U. Durgadsimi, S. Chouguleb, S. Belladc

Abstract:

(y) Li0.5Ni0.7Zn0.05Fe2O4 + (1-y) Ba0.5Sr0.5TiO3 magnetoelectric composites with y = 0.1, 0.3 and 0.5 were prepared by a conventional standard double sintering ceramic technique. X-ray diffraction analysis confirmed the phase formation of ferrite, ferroelectric and their composites. logρdc Vs 1/T graphs reveal that the dc resistivity decreases with increasing temperature exhibiting semiconductor behavior. The plots of logσac Vs logω2 are almost linear indicating that the conductivity increases with increase in frequency i.e, conductivity in the composites is due to small polaron hopping. Dielectric constant (έ) and dielectric loss (tan δ) were studied as a function of frequency in the range 100Hz–1MHz which reveals the normal dielectric behavior except the composite with y=0.1 and as a function of temperature at four fixed frequencies (i.e. 100Hz, 1KHz, 10KHz, 100KHz). ME voltage coefficient decreases with increase in ferrite content and was observed to be maximum of about 7.495 mV/cmOe for (0.1) Li0.5Ni0.7Zn0.05Fe2O4 + (0.9) Ba0.5Sr0.5TiO3 composite.

Keywords: XRD, dielectric constant, dielectric loss, DC and AC conductivity, ME voltage coefficient

Procedia PDF Downloads 344

Authors: Delele Worku Ayele, Bing-Joe Hwang

Abstract:

A method that does not employ hot injection techniques has been developed for the size-tunable synthesis of high-quality CdSe quantum dots (QDs) with a zinc blende structure. In this environmentally benign synthetic route, which uses relatively less toxic precursors, solvents, and capping ligands, CdSe QDs that absorb visible light are obtained. The size of the as-prepared CdSe QDs and, thus, their optical properties can be manipulated by changing the microwave reaction conditions. The QDs are characterized by XRD, TEM, UV-vis, FTIR, time-resolved fluorescence spectroscopy, and fluorescence spectrophotometry. In this approach, the reaction is conducted in open air and at a much lower temperature than in hot injection techniques. The use of microwaves in this process allows for a highly reproducible and effective synthesis protocol that is fully adaptable for mass production and can be easily employed to synthesize a variety of semiconductor QDs with the desired properties. The possible application of the as-prepared CdSe QDs has been also assessed using deposition on TiO2 films.

Keywords: CdSe QDs, Na2SeSO3, microwave (MW), oleic acid, mass production, average life time

Procedia PDF Downloads 709

Authors: Venkata Reddy Kota

Abstract:

These days, the industrial trend is moving away from heavy and bulky passive components to power converter systems that use more and more semiconductor elements. Also, it is difficult to connect the traditional converters to the high and medium voltage. For these reasons, a new family of multilevel inverters has appeared as a solution for working with higher voltage levels. Different modulation topologies like Sinusoidal Pulse Width Modulation (SPWM), Selective Harmonic Elimination Pulse Width Modulation (SHE-PWM) are available for multilevel inverters. In this work, different hybrid modulation techniques which are combination of fundamental frequency modulation and multilevel sinusoidal-modulation are compared. The main characteristic of these modulations are reduction of switching losses with good harmonic performance and balanced power loss dissipation among the device. The proposed hybrid modulation schemes are developed and simulated in Matlab/Simulink for cascaded H-bridge inverter. The results validate the applicability of the proposed schemes for cascaded multilevel inverter.

Keywords: hybrid PWM techniques, cascaded multilevel inverters, switching loss minimization

Procedia PDF Downloads 616

Authors: Thabelo Nelushi, Michael Scurrell, Tumelo Seadira

Abstract:

Global warming is one of the most important environmental issues which arise from occurrence of gases such as carbon dioxide (CO2) and methane (CH4) in the atmosphere. Exposure to these greenhouse gases results in health risk. Hydrogen is regarded as an alternative energy source which is a clean energy carrier for the future. There are different methods to produce hydrogen such as steam reforming, coal gasification etc., however the challenge with these processes is that they emit CO and CO2 gases and are costly. Photocatalytic reforming is a substitute process which is fascinating due to the combination of solar energy and renewable sources and the use of semiconductor materials such as catalysts. TiO2 is regarded as the most promising catalysts. TiO2 nanoparticles prepared by hydrothermal method and Ag/TiO2 are being investigated for photocatalytic production of hydrogen from butanol. The samples were characterized by raman spectroscopy, TEM/SEM, XRD, XPS, EDAX, DRS and BET surface area. 2 wt% Ag-doped TiO2 nanoparticle showed enhanced hydrogen production compared to a non-doped TiO2. The results of characterization and photoactivity shows that TiO2 nanoparticles play a very important role in producing high hydrogen by utilizing solar irradiation.

Keywords: butanol, hydrogen production, silver particles, TiO2 nanoparticles

Procedia PDF Downloads 210

Authors: Jinyoung Kim, Jinuk Kwon, Haksoo Han

Abstract:

Polyimide is widely used in electronic industries, and heat dissipation of polyimide film is important for its application in electric devices for high-temperature resistance heat dissipation film. In this study, we demonstrated a new way to increase heat dissipating rate by adding carbon black as filler. This type of polyimide composite film was produced by pyromellitic dianhydride (PMDA) and 4,4’-oxydianiline (ODA). Carbon black (CB) is added in different loading, shows increasing heat dissipation rate for increase of Carbon black. The polyimide-carbon black composite film is synthesized with high dissipation rate to ~8W∙m−1K−1. Its high thermal decomposition temperature and glass transition temperature were maintained with carbon filler verified by thermogravimetric analysis (TGA) and differential scanning calorimetric (DSC), the polyimidization reaction of polyi(amide-mide) was confirmed by Fourier transform infrared spectroscopy (FT-IR). The polyimide composite film with carbon black with high heat dissipating rate could be used in various applications such as computers, mobile phone industries, integrated circuits, coating materials, semiconductor etc.

Keywords: polyimide, heat dissipation, electric device, filler

Procedia PDF Downloads 679