Search results for: semiconductor

Authors: S. Zhuiykov, Z. Wei

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Conformal defect-free two-dimensional (2D) WO₃ and TiO₂ semiconductors have been developed by the atomic layer deposition (ALD) technique on wafer scale with unique approach to the thickness control with precision of ± 10% from the monolayer of nanomaterial (less than 1.0 nm thick) to the nano-layered 2D structures with thickness of ~3.0-7.0 nm. Developed 2D nanostructures exhibited unique, distinguishable properties at nanoscale compare to their thicker counterparts. Specifically, 2D TiO₂-Au bilayer demonstrated improved photocatalytic degradation of palmitic acid under UV and visible light illumination. Improved functional capabilities of 2D semiconductors would be advantageous to various environmental, nano-energy and bio-sensing applications. The ALD-enabled approach is proven to be versatile, scalable and applicable to the broader range of 2D semiconductors.

Keywords: two-dimensional (2D) semiconductors, ALD, WO₃, TiO₂, wafer scale

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Authors: Mohsen Khaledian, Razali Ismail, Mehdi Saeidmanesh, Mahdiar Hosseinghadiry

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A semi-analytical model for impact ionization coefficient of graphene nanoribbon (GNR) is presented. The model is derived by calculating probability of electrons reaching ionization threshold energy Et and the distance traveled by electron gaining Et. In addition, ionization threshold energy is semi-analytically modeled for GNR. We justify our assumptions using analytic modeling and comparison with simulation results. Gaussian simulator together with analytical modeling is used in order to calculate ionization threshold energy and Kinetic Monte Carlo is employed to calculate ionization coefficient and verify the analytical results. Finally, the profile of ionization is presented using the proposed models and simulation and the results are compared with that of silicon.

Keywords: nanostructures, electronic transport, semiconductor modeling, systems engineering

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Authors: Alok Kumar Kamal, Vinod Kumar

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The trench gate MOSFET has shown itself as the most appropriate power device for low to medium voltage power applications due to its lowest possible ON resistance among all power semiconductor devices. In this research work a double-epilayer PSGT structure using a thin layer of N+ polysilicon as gate material. The total ON-state resistance (RON) of UMOSFET can be reduced by optimizing the epilayer thickness. The optimized structure of Double-Epilayer exhibits a 25.8% reduction in the ON-state resistance at Vgs=5V and improving the switching characteristics by reducing the Reverse transfer capacitance (Cgd) by 7.4%.

Keywords: Miller-capacitance, double-Epilayer;switching characteristics, power trench MOSFET (U-MOSFET), on-state resistance, blocking voltage

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Authors: M. S. Al-Assiri, M. M. El-Desoky, A. A. Bahgat

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Nanocrystalline thin film of Na0.1V2O5.nH2O xerogel obtained by sol-gel synthesis was used as a gas sensor. Gas sensing properties of different gases such as hydrogen, petroleum and humidity were investigated. Applying XRD and TEM the size of the nanocrystals is found to be 7.5 nm. SEM shows a highly porous structure with submicron meter-sized voids present throughout the sample. FTIR measurement shows different chemical groups identifying the obtained series of gels. The sample was n-type semiconductor according to the thermoelectric power and electrical conductivity. It can be seen that the sensor response curves from 130°C to 150°C show a rapid increase in sensitivity for all types of gas injection, low response values for heating period and the rapid high response values for cooling period. This result may suggest that this material is able to act as gas sensor during the heating and cooling process.

Keywords: sol-gel, thermoelectric power, XRD, TEM, gas sensing

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Authors: Min Han, Di Wu, Lin Yuan, Fei Liu

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Mechanical sensors have undergone a continuous evolution and have become an important part of many industries, ranging from manufacturing to process, chemicals, machinery, health-care, environmental monitoring, automotive, avionics, and household appliances. Concurrently, the microelectronics and microfabrication technology have provided us with the means of producing mechanical microsensors characterized by high sensitivity, small size, integrated electronics, on board calibration, and low cost. Here we report a new kind of mechanical sensors based on the quantum transport process of electrons in the closely spaced nanoparticle films covering a flexible polymer sheet. The nanoparticle films were fabricated by gas phase depositing of preformed metal nanoparticles with a controlled coverage on the electrodes. To amplify the conductance of the nanoparticle array, we fabricated silver interdigital electrodes on polyethylene terephthalate(PET) by mask evaporation deposition. The gaps of the electrodes ranged from 3 to 30μm. Metal nanoparticles were generated from a magnetron plasma gas aggregation cluster source and deposited on the interdigital electrodes. Closely spaced nanoparticle arrays with different coverage could be gained through real-time monitoring the conductance. In the film coulomb blockade and quantum, tunneling/hopping dominate the electronic conduction mechanism. The basic principle of the mechanical sensors relies on the mechanical deformation of the fabricated devices which are translated into electrical signals. Several kinds of sensing devices have been explored. As a strain sensor, the device showed a high sensitivity as well as a very wide dynamic range. A gauge factor as large as 100 or more was demonstrated, which can be at least one order of magnitude higher than that of the conventional metal foil gauges or even better than that of the semiconductor-based gauges with a workable maximum applied strain beyond 3%. And the strain sensors have a workable maximum applied strain larger than 3%. They provide the potential to be a new generation of strain sensors with performance superior to that of the currently existing strain sensors including metallic strain gauges and semiconductor strain gauges. When integrated into a pressure gauge, the devices demonstrated the ability to measure tiny pressure change as small as 20Pa near the atmospheric pressure. Quantitative vibration measurements were realized on a free-standing cantilever structure fabricated with closely-spaced nanoparticle array sensing element. What is more, the mechanical sensor elements can be easily scaled down, which is feasible for MEMS and NEMS applications.

Keywords: gas phase deposition, mechanical sensors, metallic nanoparticle arrays, quantum conductance

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Authors: Z. Ghorannevis, E. Akbarnejad, B. Aghazadeh, M. Ghoranneviss

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Carbon nanotubes (CNTs) modified with semiconductor nanocrystalline particles may find wide applications due to their unique properties. Here Cadmium Sulfide (CdS) nanoparticles were successfully grown on Multi-Walled Carbon Nanotubes (MWNTs) via a magnetron sputtering method for the first time. The CdS/MWNTs sample was characterized with X-ray diffraction (XRD), Field Emission Scanning and High Resolution Transmission Electron Microscopies (SEM/TEM) and four point probe. The obtained images show clearly the decoration of the MWNTs by the CdS nanoparticles, and the XRD measurements indicate the CdS structure as hexagonal type. Moreover, the physical properties of the CdS/MWNTs were compared with the physical properties of the CdS nanoparticles grown on the silicon. Electrical measurements of CdS and CdS/MWNTs reveal that CdS/MWNTs has lower resistivity than the CdS sample which may be due to the higher carrier concentrations.

Keywords: CdS, MWNTs, HRTEM, magnetron sputtering

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Authors: Moussa Hamdan, Abdulati Abdullah

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This paper presents an investigation of the fabrication of the optical devices in terms of their characteristics based on the use of the electromagnetic waves. Planar waveguides are used to examine the field modes (bound modes) and the parameters required for this structure. The modifications are conducted on surface plasmons based waveguides. Simple symmetric dielectric slab structure is used and analyzed in terms of transverse electric mode (TE-Mode) and transverse magnetic mode (TM-Mode. The paper presents mathematical and numerical solutions for solving simple symmetric plasmons and provides simulations of surface plasmons for field confinement. Asymmetric TM-mode calculations for dielectric surface plasmons are also provided.

Keywords: surface plasmons, optical waveguides, semiconductor lasers, refractive index, slab dialectical

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Authors: Rohana Musa, Yuzman Yusoff, Chia Chieu Yin, Hanif Che Lah

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This paper presents the design and characterization of a low power Complementary Metal Oxide Semiconductor (CMOS) process sensor. The design is targeted for implementation using Silterra’s 180 nm CMOS process technology. The proposed process sensor employs a voltage threshold (V_th) extractor architecture for detection of variations in the fabrication process. The process sensor generates output voltages in the range of 401 mV (fast-fast corner) to 443 mV (slow-slow corner) at nominal condition. The power dissipation for this process sensor is 6.3 µW with a supply voltage of 1.8V with a silicon area of 190 µm X 60 µm. The preliminary result of this process sensor that was fabricated indicates a close resemblance between test and simulated results.

Keywords: CMOS process sensor, PVT sensor, threshold extractor circuit, Vth extractor circuit

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Authors: A. Pourahmad, Sh. Gharipour

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The present work describes the preparation and characterization of nanosized SiO₂@PbS core-shell particles by using a simple wet chemical route. This method utilizes silica spheres formation followed by successive ionic layer adsorption and reaction method assisted lead sulphide shell layer formation. The final product was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–vis spectroscopic, infrared spectroscopy (IR) and transmission electron microscopy (TEM) experiments. The morphological studies revealed the uniformity in size distribution with core size of 250 nm and shell thickness of 18 nm. The electron microscopic images also indicate the irregular morphology of lead sulphide shell layer. The structural studies indicate the face-centered cubic system of PbS shell with no other trace for impurities in the crystal structure.

Keywords: core-shell, nanostructure, semiconductor, optical property, XRD

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Authors: G. Sivakumar, T. Pratyusha, D. Gupta, W. Shen

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To get ohmic contact between the cathode and organic semiconductor, transport layers are introduced between the active layer and the electrodes. Generally zinc oxide or titanium dioxide are used as electron transport layer. When electron transport layer is doped with lithium, the resultant film exhibited superior electronic properties, which enables faster electron transport. Doping is accomplished by heat treatment of films with Lithium salts. Li-doped films. We fabricated organic solar cell using PTB7(poly(3-hexylthiopene-2,5- diyl):PCBM(phenyl-C61-butyric acid methyl ester) and found that the solar cells prepared using Li doped films had better performance in terms of efficiency when compared to the undoped transport layers.

Keywords: electron transport layer, higher efficiency, lithium doping, ohmic contact

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Authors: Min-Hao Wang, Shih-Chih Chen

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Recently, the merits such as simple structure, low power consumption, and compatibility with complementary metal oxide semiconductor (CMOS) process give an advantage of resistive random access memory (RRAM) as a promising candidate for the next generation memory， hafnium dioxide (HfO2) has been widely studied as an oxide layer material, but the use of copper (Cu) as both top and bottom electrodes has rarely been studied. In this study, radio frequency sputtering was used to deposit the intermediate layer HfO₂, and electron beam evaporation was used. For the upper and lower electrodes (cu), using different AR: O ratios, we found that the control of the metal filament will make the filament widely distributed, causing the current to rise to the limit current during Reset. However, if the flow ratio is controlled well, the ON/OFF ratio can reach 104, and the set voltage is controlled below 3v.

Keywords: RRAM, metal filament, HfO₂, Cu electrode

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Authors: Boudjedra Abderrahim, Toumi Salah, Boutalbi Mostefa, Frihi Mohammed

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Nowadays, using the advancement of technology in semiconductor device fabrication, many transistors can be integrated to a single chip (VLSI). Although the growth chip density potentially eases systems-on-chip (SoCs) integrating thousands of processing element (PE) such as memory, processor, interfaces cores, system complexity, high-performance interconnect and scalable on-chip communication architecture become most challenges for many digital and embedded system designers. Networks-on-chip (NoCs) becomes a new paradigm that makes possible integrating heterogeneous devices and allows many communication constraints and performances. In this paper, we are interested for good performance and low area for implementation and a behavioral modeling of network on chip mesh topology design using VHDL hardware description language with performance evaluation and FPGA implementation results.

Keywords: design, implementation, communication system, network on chip, VHDL

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Authors: Janjira Triped, Wipada Sanongraj, Wipawee Khamwichit

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The research work covered in this study includes the morphological structure and optical properties of TiO2-coated silk fibroin (SF) filters at 2.5% wt. TiO2/vol. PVA solution. SEM micrographs revealed the fibrous morphology of the TiO2-coated SF filters. An average diameter of the SF fiber was estimated to be approximately 10µm. Also, it was confirmed that TiO2 can be adhered more on SF filter surface at higher TiO2 dosages. The activity of semiconductor materials was studied by UV-VIS spectrophotometer method. The spectral data recorded shows the strong cut off at 390 nm. The calculated band-gap energy was about 3.19 eV. The photocatalytic activity of the filter was tested for gaseous formaldehyde removal in a modeling room with the total volume of 2.66 m3. The highest removal efficiency (54.72 ± 1.75%) was obtained at the initial formaldehyde concentration of about 5.00 ± 0.50ppm.

Keywords: photocatalytic oxidation process, formaldehyde (HCHO), silk fibroin (SF), titanium dioxide (TiO2)

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Authors: Hoon Yi, Minho Sung, Hangil Ko, Moon Kyu Kwak, Hoon Eui Jeong

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Inspired by the remarkable adhesion properties of gecko lizards, bio-inspired dry adhesives with smart adhesion properties have been developed in the last decade. Compared to earlier dry adhesives, the recently developed ones exhibit excellent adhesion strength, smart directional adhesion, and structural robustness. With these unique adhesion properties, bio-inspired dry adhesive pads have strong potential for use in precision industries such as semiconductor or display manufacturing. In this communication, we present a new manufacturing technology based on advanced dry adhesive systems that enable precise manipulation of large-area substrates over repeating cycles without any requirement for external force application. This new manufacturing technique is also highly accurate and environment-friendly, and thus has strong potential as a next-generation clean manufacturing technology.

Keywords: gecko, manufacturing robot, precision manufacturing

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Authors: I. Bentchikou, A. Tlemcani, F. Boudjema, D. Boukhetala, N. Ould Cherchali

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In this paper, hybrid approach is proposed to regulate the voltages of the floating capacitor multicell inverter and the current in the load. This structure makes it possible to ensure the distribution of the voltage stresses on the various low-voltage semiconductor components connected in series. And as the problem and to keep a constant voltage across the capacitors. Thus, it is necessary to ensure a distribution balanced voltages at the terminals of floating capacitors thanks to Algorithm develop for this, using the Petri nets. So we consider a three-cell converter represented as a hybrid system with eight modes of operation. The operating modes of the system are governed by the control reference voltage and a reference current. Finally, we present the results of the simulation with MATLAB/SIMULINK to illustrate the performances of this approach.

Keywords: hybrid control, floating condensers, multicellular converter, petri nets

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Authors: Ilsun Pang, Kwanghun Kim, Sungsun Baik

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Large diameter Si wafer is used as semiconductor substrate. Large diameter Si crystal ingot should be needed in order to increase wafer size. To make convection of large silicon melt stable, magnetic field is normally applied, but magnetic field is expensive and it is not proper to stabilize the large Si melt. To solve the problem, we propose a continuous Czochralski process which can be applied to small melt without magnetic field. We used granule poly, which has size distribution of 1~3 mm and is easily supplied in double crucible during silicon ingot growth. As the result, we produced 420 mm diameter ingot. In this paper, we describe an experimental study on crystal growth of large diameter silicon by Continuous Czochralski process.

Keywords: Czochralski, ingot, silicon crystal, wafer

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Authors: Kunj Parikh, S. Bhattacharya, V. Natarajan

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TCAD numerical simulation is one of the most tried and tested powerful tools for designing devices in semiconductor foundries worldwide. It has also been used to explain conduction in organic thin films where the processing temperature is often enough to make homogeneous samples (often imperfect, but homogeneously imperfect). In this report, we have presented the results of TCAD simulation in multi-grain thin films. The work has addressed the inhomogeneity in one dimension, but can easily be extended to two and three dimensions. The effect of grain boundaries has mainly been approximated as barriers located at the junction between two adjacent grains. The effect of the value of grain boundary barrier, the bulk traps, and the measurement temperature have been investigated.

Keywords: polycrystalline thin films, space charge limited conduction, Technology Computer-Aided Design (TCAD) simulation, traps

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Authors: Ahmed Bakry, Moustafa Ahmed

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We model and simulate the combined effect of fiber dispersion and frequency chirp of a directly modulated high-speed laser diode on the figures of merit of a non-amplified 40-Gbps optical fiber link. We consider both the return to zero (RZ) and non-return to zero (NRZ) patterns of the pseudorandom modulation bits. The performance of the fiber communication system is assessed by the fiber-length limitation due to the fiber dispersion. We study the influence of replacing standard single-mode fibers by non-zero dispersion-shifted fibers on the maximum fiber length and evaluate the associated power penalty. We introduce new dispersion tolerances for 1-dB power penalty of the RZ and NRZ 40-Gbps optical fiber links.

Keywords: bit error rate, dispersion, frequency chirp, fiber communications, semiconductor laser

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Authors: Anna Krukowska, Tomasz Klimczuk, Adriana Zaleska-Medynska

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Photoactive materials have attracted attention due to their potential application in the degradation of environmental pollutants to non-hazardous compounds in an eco-friendly route. Among semiconductor photocatalysts, tantalates such as potassium tantalate (KTaO3) is one of the excellent functional photomaterial. However, tantalates-based materials are less active under visible-light irradiation, the enhancement in photoactivity could be improved with the modification of opto-eletronic properties of KTaO3 by doping rare earth metal (Er) and further photodeposition of noble metal nanoparticles (Pt). Inclusion of rare earth element in orthorhombic structure of tantalate can generate one high-energy photon by absorbing two or more incident low-energy photons, which convert visible-light and infrared-light into the ultraviolet-light to satisfy the requirement of KTaO3 photocatalysts. On the other hand, depositions of noble metal nanoparticles on the surface of semiconductor strongly absorb visible-light due to their surface plasmon resonance, in which their conducting electrons undergo a collective oscillation induced by electric field of visible-light. Furthermore, the high dispersion of Pt nanoparticles, which will be obtained by photodeposition process is additional important factor to improve the photocatalytic activity. The present work is aimed to study the effect of photocatalytic process of the prepared Er-doped KTaO3 and further incorporation of Pt nanoparticles by photodeposition. Moreover, the research is also studied correlations between photocatalytic activity and physico-chemical properties of obtained Pt/Er-KTaO3 samples. The Er-doped KTaO3 microcomposites were synthesized by a hydrothermal method. Then photodeposition method was used for Pt loading over Er-KTaO3. The structural and optical properties of Pt/Er-KTaO3 photocatalytic were characterized using scanning electron microscope (SEM), X-ray diffraction (XRD), volumetric adsorption method (BET), UV-Vis absorption measurement, Raman spectroscopy and luminescence spectroscopy. The photocatalytic properties of Pt/Er-KTaO3 microcomposites were investigated by degradation of phenol in aqueous phase as model pollutant under visible and ultraviolet-light irradiation. Results of this work show that all the prepared photocatalysis exhibit low BET surface area, although doping of the bare KTaO3 with rare earth element (Er) presents a slight increase in this value. The crystalline structure of Pt/Er-KTaO3 powders exhibited nearly identical positions for the main peak at about 22,8o and the XRD pattern could be assigned to an orthorhombic distorted perovskite structure. The Raman spectra of obtained semiconductors confirmed demonstrating perovskite-like structure. The optical absorption spectra of Pt nanoparticles exhibited plasmon absorption band for main peaks at about 216 and 264 nm. The addition of Pt nanoparticles increased photoactivity compared to Er-KTaO3 and pure KTaO3. Summary optical properties of KTaO3 change with its doping Er-element and further photodeposition of Pt nanoparticles.

Keywords: heterogeneous photocatalytic, KTaO3 photocatalysts, Er3+ ion doping, Pt photodeposition

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Authors: Bourfaa Fouzia, Meryem Lamri Zeggar, Adjimi Amel, Mohammed Salah Aida, Nadir Attaf

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Semiconductor photocatalysts such as ZnO has attracted much attention in recent years due to their various applications for the degradation of organic pollutants in water, air and in dye sensitized photovoltaic solar cell. In the present work, ZnO thin films were prepared by ultrasonic spray pyrolysis by using different precursors namely: Acetate, chloride and zinc nitrate in order to investigate their influence on ZnO photocatalytic activity. The films crystalline structure was studied by mean of X-ray diffraction measurements (XRD) and the films surface morphology by Scanning Electron Microscopy (SEM). The films optical properties were studied by mean of UV–visible spectroscopy. The prepared films were tested for the degradation of the red reactive dye largely used in textile industry. As a result, we found that the zinc nitrate is the best precursor to prepare ZnO thin films suitable for a good photocatalytic activity.

Keywords: precursor, thins films, spray pyrolysis, zinc oxide

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Authors: T. Angeline Priyanka, R. Ganesan

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Recent trends in microelectronics technology have gradually changed the strategies used in very large scale integration (VLSI) circuits. Complementary Metal Oxide Semiconductor (CMOS) technology has been the industry standard for implementing VLSI device for the past two decades, but due to scale-down issues of ultra-low dimension achievement is not achieved so far. Hence it paved a way for Quantum Cellular Automata (QCA). It is only one of the many alternative technologies proposed as a replacement solution to the fundamental limit problem that CMOS technology will impose in the years to come. In this brief, presented a new adder that possesses high speed of operation occupying less area is proposed. This adder is designed especially for error tolerant application. Hence in the proposed adder, the overall area (cell count) and simulation time are reduced by 88 and 73 percent respectively. Various results of the proposed adder are shown and described.

Keywords: quantum cellular automata, carry look ahead adder, ripple carry adder, lossy application, majority gate, crossover

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Authors: Weidong Fu, Qingsong Wang, Wei Hua, Ming Cheng, Giuseppe Buja

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A single-phase transformerless electric energy router (TL-EER) is proposed for renewable energy management and power quality improvement in smart homes. The proposed TL-EER only contains four semiconductor switching devices, which reduces costs greatly compared to traditional electric energy routers. TL-EER functions as intelligent systems that optimize the flow and distribution of energy within a grid, enabling seamless interaction between generation, storage, and consumption. In addition, TL-EER operates in multiple modes and could be converted to diverse topologies by changing the states of relays. As for power quality, voltage and current compensating methods are adapted. Thus, high-quality electrical energy could be transferred to the load, and the grid-side power factor could be improved. Finally, laboratory prototypes are established to validate the effectiveness of the system.

Keywords: transformerless, electric energy router, power flow, power quality, power factor

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Authors: Matineh Sadat Hosseini Gheidari, Vahid Reza Yazdanpanah

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In this paper, we used the empirical tight-binding method (ETBM) with sp3s* approximation and considering the first nearest neighbor with spin-orbit interactions in order to model superlattice structure (SLS) of (AlₓGa₁₋ₓAs)ₘ/(GaAs)ₙ grown on GaAs (100) substrate at 300K. In the next step, we investigated the behavior of the energy gap and wavelength of this superlattice in terms of different thicknesses of core materials and Al mole fractions. As a result of this survey, we found out that as the Al composition increases, the energy gap of this superlattice has an upward trend and ranges from 1.42-1.63 eV. Also, according to the wavelength range that we gained from this superlattice in different Al mole fractions and various thicknesses, we can find a suitable semiconductor for a special light-emitting diode (LED) application.

Keywords: energy gap, empirical tight-binding method, light-emitting diode, superlattice, wavelength

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Authors: T. Bielewicz, S. Dogan, C. Klinke

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Two-dimensional, solution-processable semiconductor materials are interesting for low-cost electronic applications [1]. We demonstrate the synthesis of lead sulfide nanosheets and how their size, shape and height can be tuned by varying concentrations of pre-cursors, ligands and by varying the reaction temperature. Especially, the charge carrier confinement in the nanosheets’ height adjustable from 2 to 20 nm has a decisive impact on their electronic properties. This is demonstrated by their use as conduction channel in a field effect transistor [2]. Recently we also showed that especially thin nanosheets show a high carrier multiplication (CM) efficiency [3] which could make them, through the confinement induced band gap and high photoconductivity, very attractive for application in photovoltaic devices. We are already able to manufacture photovoltaic devices out of single nanosheets which show promising results.

Keywords: physical sciences, chemistry, materials, chemistry, colloids, physics, condensed-matter physics, semiconductors, two-dimensional materials

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Authors: Lotfi Hedi Khezami, Mohamed Ben Rabha, N. Sboui, Mounir Gaidi, B. Bessais

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Metal-nano particle-assisted Chemical Etching is an extraordinary developed wet etching method of producing uniform semiconductor nano structure (nano wires) from patterned metallic film on crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs). Creation of different SiNWs morphologies by changing the etching time and its effects on optical and opto electronic properties was investigated. Combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and opto electronic properties are presented in this paper.

Keywords: stain etching, porous silicon, silicon nanowires, reflectivity, lifetime, solar cells

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Authors: A. Almurshedi, M. Atherton, C. Mares, T. Stolarski, M. Miyatake

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Transportation and handling of delicate and lightweight objects is currently a significant issue in some industries. Two common contactless movement prototype designs, ultrasonic transducer design and vibrating plate design, are compared. Both designs are based on the method of squeeze-film levitation, and this study aims to identify the limitations, and challenges of each. The designs are evaluated in terms of levitation capabilities, and characteristics. To this end, theoretical and experimental explorations are made. It is demonstrated that the ultrasonic transducer prototype design is better suited to the terms of levitation capabilities. However, the design has some operating and mechanical designing difficulties. For making accurate industrial products in micro-fabrication and nanotechnology contexts, such as semiconductor silicon wafers, micro-components and integrated circuits, non-contact oil-free, ultra-precision and low wear transport along the production line is crucial for enabling. One of the designs (design A) is called the ultrasonic chuck, for which an ultrasonic transducer (Langevin, FBI 28452 HS) comprises the main part. Whereas the other (design B), is a vibrating plate design, which consists of a plain rectangular plate made of Aluminium firmly fastened at both ends. The size of the rectangular plate is 200x100x2 mm. In addition, four rounded piezoelectric actuators of size 28 mm diameter with 0.5 mm thickness are glued to the underside of the plate. The vibrating plate is clamped at both ends in the horizontal plane through a steel supporting structure. In addition, the dynamic of levitation using the designs (A and B) has been investigated based on the squeeze film levitation (SFL). The input apparatus that is used with designs consist of a sine wave signal generator connected to an amplifier type ENP-1-1U (Echo Electronics). The latter has to be utilised to magnify the sine wave voltage that is produced by the signal generator. The measurements of the maximum levitation for three different semiconductor wafers of weights 52, 70 and 88 [g] for design A are 240, 205 and 187 [um], respectively. Whereas the physical results show that the average separation distance for a disk of 5 [g] weight for design B reaches 70 [um]. By using the methodology of squeeze film levitation, it is possible to hold an object in a non-contact manner. The analyses of the investigation outcomes signify that the non-contact levitation of design A provides more improvement than design B. However, design A is more complicated than design B in terms of its manufacturing. In order to identify an adequate non-contact SFL design, a comparison between two common such designs has been adopted for the current investigation. Specifically, the study will involve making comparisons in terms of the following issues: floating component geometries and material type constraints; final created pressure distributions; dangerous interactions with the surrounding space; working environment constraints; and complication and compactness of the mechanical design. Considering all these matters is essential for proficiently distinguish the better SFL design.

Keywords: ANSYS, floating, piezoelectric, squeeze-film

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Authors: S. Zhuiykov, Zh. Hai, H. Xu, C. Xue

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Unique and distinctive properties could be obtained on such two-dimensional (2D) semiconductor as tungsten trioxide (WO₃) when the reduction from multi-layer to one fundamental layer thickness takes place. This transition without damaging single-layer on a large spatial resolution remained elusive until the atomic layer deposition (ALD) technique was utilized. Here we report the ALD-enabled atomic-layer-precision development of a single layer WO₃ with thickness of 0.77±0.07 nm on a large spatial resolution by using (^tBuN)₂W(NMe₂)₂ as tungsten precursor and H₂O as oxygen precursor, without affecting the underlying SiO₂/Si substrate. Versatility of ALD is in tuning recipe in order to achieve the complete WO₃ with desired number of WO₃ layers including monolayer. Governed by self-limiting surface reactions, the ALD-enabled approach is versatile, scalable and applicable for a broader range of 2D semiconductors and various device applications.

Keywords: Atomic Layer Deposition (ALD), tungsten oxide, WO₃, two-dimensional semiconductors, single fundamental layer

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Authors: T. Weber, D. MacKenzie

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The script in this paper describes the use of advanced simulation environment using electronic systems (microcontroller, operational amplifiers, and FPGA). The simulation was used for non-linear dynamic systems behaviour with required observer structure working with parallel real-time simulation based on state-space representation. The proposed deposited model was used for electrodynamic effects including ionising effects and eddy current distribution also. With the script and proposed method, it is possible to calculate the spatial distribution of the electromagnetic fields in real-time and such systems. For further purpose, the spatial temperature distribution may also be used. With upon system, the uncertainties and disturbances may be determined. This provides the estimation of the more precise system states for the required system and additionally the estimation of the ionising disturbances that arise due to radiation effects in space systems. The results have also shown that a system can be developed specifically with the real-time calculation (estimation) of the radiation effects only. Electronic systems can take damage caused by impacts with charged particle flux in space or radiation environment. TID (Total Ionising Dose) of 1 Gy and Single Effect Transient (SET) free operation up to 50 MeVcm²/mg may assure certain functions. Single-Event Latch-up (SEL) results on the placement of several transistors in the shared substrate of an integrated circuit; ionising radiation can activate an additional parasitic thyristor. This short circuit between semiconductor-elements can destroy the device without protection and measurements. Single-Event Burnout (SEB) on the other hand, increases current between drain and source of a MOSFET and destroys the component in a short time. A Single-Event Gate Rupture (SEGR) can destroy a dielectric of semiconductor also. In order to be able to react to these processes, it must be calculated within a shorter time that ionizing radiation and dose is present. For this purpose, sensors may be used for the realistic evaluation of the diffusion and ionizing effects of the test system. For this purpose, the Peltier element is used for the evaluation of the dynamic temperature increases (dT/dt), from which a measure of the ionization processes and thus radiation will be detected. In addition, the piezo element may be used to record highly dynamic vibrations and oscillations to absorb impacts of charged particle flux. All available sensors shall be used to calibrate the spatial distributions also. By measured value of size and known location of the sensors, the entire distribution in space can be calculated retroactively or more accurately. With the formation, the type of ionisation and the direct effect to the systems and thus possible prevent processes can be activated up to the shutdown. The results show possibilities to perform more qualitative and faster simulations independent of space-systems and radiation environment also. The paper gives additionally an overview of the diffusion effects and their mechanisms.

Keywords: cattle, biochar, manure, microbial activity

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Authors: Robert Setekera, Ramses van der Toorn

Abstract:

We present an extensive analysis of the temperature dependence of the local avalanche model used in most of the modern compact models for bipolar transistors. This local avalanche model uses the Chynoweth's empirical law for ionization coefficient to define the generation of the avalanche current in terms of the local electric field. We carry out the model analysis using DC-measurements taken on both Si and advanced SiGe bipolar transistors. For the advanced industrial SiGe-HBTs, we consider both high-speed and high-power devices (both NPN and PNP transistors). The limitations of the local avalanche model in modeling the temperature dependence of the avalanche current mostly in the weak avalanche region are demonstrated. In addition, the model avalanche parameters are analyzed to see if they are in agreement with semiconductor device physics.

Keywords: avalanche multiplication, avalanche current, bipolar transistors, compact modeling, electric field, impact ionization, local avalanche

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Authors: A. Apostolopoulou, D. Sygkridou, A. N. Kalarakis, E. Stathatos

Abstract:

Mesoscopic perovskite solar cells (mp-PSCs) with mesoporous bilayer were fabricated under ambient conditions. The bilayer was formed by capping the mesoporous TiO₂ layer with a layer of In₂O₃. CH₃NH₃I_3-xCl_x mixed halide perovskite was prepared through the one-step method and was used as the light absorber. The mp-PSCs with the composite TiO₂/In₂O₃ mesoporous layer exhibited optimized electrical parameters, compared with the PSCs that employed only a TiO₂ mesoporous layer, with a current density of 23.86 mA/cm², open circuit voltage of 0.863 V, fill factor of 0.6 and a power conversion efficiency of 11.2%. These results indicate that the formation of a proper semiconductor capping layer over the basic TiO₂ mesoporous layer can facilitate the electron transfer, suppress the recombination and subsequently lead to higher charge collection efficiency.

Keywords: ambient conditions, high efficiency solar cells, mesoscopic perovskite solar cells, TiO₂ / In₂O₃ bilayer

Procedia PDF Downloads 270