Search results for: semiconductor optical amplifier
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2103

Search results for: semiconductor optical amplifier

1983 Magneto-Optical Properties in Transparent Region of Implanted Garnet Films

Authors: Lali Kalanadzde

Abstract:

We investigated magneto-optical Kerr effect in transparent region of implanted ferrite-garnet films for the (YBiCa)3(FeGe)5O12. The implantation process was carried out at room temperature by Ne+ ions with energy of 100 KeV and with various doses (0.5-2.5) 1014 ion/cm2. We discovered that slight deviation of the plane of external alternating magnetic field from plane of sample leads to appearance intensive magneto-optical maximum in transparent region of garnet films ħω=0.5-2.0 eV. In the proceeding, we have also found that the deviation of polarization plane from P- component of incident light leads to the appearance of the similar magneto-optical effects in this region. The research of magnetization processes in transparent region of garnet films showed that the formation of magneto-optical effects in region ħω=0.5-2.3 eV has a rather complex character.

Keywords: ferrite-garnet films, ion implantation, magneto-optical, thin films

Procedia PDF Downloads 303
1982 A Framework for the Design of Green Giga Passive Optical Fiber Access Network in Kuwait

Authors: Ali A. Hammadi

Abstract:

In this work, a practical study on a commissioned Giga Passive Optical Network (GPON) fiber to the home access network in Kuwait is presented. The work covers the framework of the conceptual design of the deployed Passive Optical Networks (PONs), access network, optical fiber cable network distribution, technologies, and standards. The work also describes methodologies applied by system engineers for design of Optical Network Terminals (ONTs) and Optical Line Terminals (OLTs) transceivers with respect to the distance, operating wavelengths, splitting ratios. The results have demonstrated and justified the limitation of transmission distance of a PON link in Fiber to The Premises (FTTP) to not exceed 20 km. Optical Time Domain Reflector (OTDR) test has been carried for this project to confirm compliance with International Telecommunication Union (ITU) specifications regarding the total length of the deployed optical cable, total loss in dB, and loss per km in dB/km with respect to the operating wavelengths. OTDR test results with traces for segments of implemented fiber network will be provided and discussed.

Keywords: passive optical networks (PONs), fiber to the premises (FTTx), access network, OTDR

Procedia PDF Downloads 288
1981 Rapid Microwave-Enhanced Process for Synthesis of CdSe Quantum Dots for Large Scale Production and Manipulation of Optical Properties

Authors: Delele Worku Ayele, Bing-Joe Hwang

Abstract:

A method that does not employ hot injection techniques has been developed for the size-tunable synthesis of high-quality CdSe quantum dots (QDs) with a zinc blende structure. In this environmentally benign synthetic route, which uses relatively less toxic precursors, solvents, and capping ligands, CdSe QDs that absorb visible light are obtained. The size of the as-prepared CdSe QDs and, thus, their optical properties can be manipulated by changing the microwave reaction conditions. The QDs are characterized by XRD, TEM, UV-vis, FTIR, time-resolved fluorescence spectroscopy, and fluorescence spectrophotometry. In this approach, the reaction is conducted in open air and at a much lower temperature than in hot injection techniques. The use of microwaves in this process allows for a highly reproducible and effective synthesis protocol that is fully adaptable for mass production and can be easily employed to synthesize a variety of semiconductor QDs with the desired properties. The possible application of the as-prepared CdSe QDs has been also assessed using deposition on TiO2 films.

Keywords: CdSe QDs, Na2SeSO3, microwave (MW), oleic acid, mass production, average life time

Procedia PDF Downloads 709
1980 Transient Enhanced LDO Voltage Regulator with Improved Feed Forward Path Compensation

Authors: A. Suresh, Sreehari Rao Patri, K. S. R. Krishnaprasad

Abstract:

An ultra low power capacitor less low-dropout voltage regulator with improved transient response using gain enhanced feed forward path compensation is presented in this paper. It is based on a cascade of a voltage amplifier and a transconductor stage in the feed forward path with regular error amplifier to form a composite gain-enhanced feed forward stage. It broadens the gain bandwidth and thus improves the transient response without substantial increase in power consumption. The proposed LDO, designed for a maximum output current of 100 mA in UMC 180 nm, requires a quiescent current of 69 µA. An undershoot of 153.79mV for a load current changes from 0mA to 100mA and an overshoot of 196.24mV for current change of 100mA to 0mA. The settling time is approximately 1.1 µs for the output voltage undershoot case. The load regulation is of 2.77 µV/mA at load current of 100mA. Reference voltage is generated by using an accurate band gap reference circuit of 0.8V.The costly features of SOC such as total chip area and power consumption is drastically reduced by the use of only a total compensation capacitance of 6pF while consuming power consumption of 0.096 mW.

Keywords: capacitor-less LDO, frequency compensation, transient response, latch, self-biased differential amplifier

Procedia PDF Downloads 451
1979 Enhancement of coupler-based delay line filters modulation techniques using optical wireless channel and amplifiers at 100 Gbit/s

Authors: Divya Sisodiya, Deepika Sipal

Abstract:

Optical wireless communication (OWC) is a relatively new technology in optical communication systems that allows for high-speed wireless optical communication. This research focuses on developing a cost-effective OWC system using a hybrid configuration of optical amplifiers. In addition to using EDFA amplifiers, a comparison study was conducted to determine which modulation technique is more effective for communication. This research examines the performance of an OWC system based on ASK and PSK modulation techniques by varying OWC parameters under various atmospheric conditions such as rain, mist, haze, and snow. Finally, the simulation results are discussed and analyzed.

Keywords: OWC, bit error rate, amplitude shift keying, phase shift keying, attenuation, amplifiers

Procedia PDF Downloads 132
1978 An Ultra-Low Output Impedance Power Amplifier for Tx Array in 7-Tesla Magnetic Resonance Imaging

Authors: Ashraf Abuelhaija, Klaus Solbach

Abstract:

In Ultra high-field MRI scanners (3T and higher), parallel RF transmission techniques using multiple RF chains with multiple transmit elements are a promising approach to overcome the high-field MRI challenges in terms of inhomogeneity in the RF magnetic field and SAR. However, mutual coupling between the transmit array elements disturbs the desirable independent control of the RF waveforms for each element. This contribution demonstrates a 18 dB improvement of decoupling (isolation) performance due to the very low output impedance of our 1 kW power amplifier.

Keywords: EM coupling, inter-element isolation, magnetic resonance imaging (mri), parallel transmit

Procedia PDF Downloads 495
1977 Synthesized Doped TiO2 Photocatalysts for Mineralization of Quinalphos from Aqueous Streams

Authors: Nidhi Sharotri, Dhiraj Sud

Abstract:

Water pollution by pesticides constitutes a serious ecological problem due to their potential toxicity and bioaccumulation. The widespread use of pesticides in industry and agriculture along with their resistance to natural decomposition, biodegradation, chemical and photochemical degradation under typical environmental conditions has resulted in the emergence of these chemicals and their transformed products in natural water. Among AOP’s, heterogeneous photocatalysis using TiO2 as photocatalyst appears as the most emerging destructive technology for mineralization of the pollutant in aquatic streams. Among the various semiconductors (TiO2, ZnO, CdS, FeTiO3, MnTiO3, SrTiO2 and SnO2), TiO2 has proven to be the most efficient photocatalyst for environmental applications due to its biological and chemical inertness, high photo reactivity, non-toxicity, and photo stability. Semiconductor photocatalysts are characterized by an electronic band structure in which valence band and conduction band are separated by a band gap, i.e. a region of forbidden energy. Semiconductor based photocatalysts produces e-/h+ pairs which have been employed for degradation of organic pollutants. The present paper focuses on modification of TiO2 photocatalyst in order to shift its absorption edge towards longer wavelength to make it active under natural light. Semiconductor TiO2 photocatalysts was prepared by doping with anion (N), cation (Mn) and double doped (Mn, N) using greener approach. Titanium isopropoxide is used as titania precursor and ethanedithiol, hydroxyl amine hydrochloride, manganous chloride as sulphur, nitrogen and manganese precursors respectively. Synthesized doped TiO2 nanomaterials are characterized for surface morphology (SEM, TEM), crystallinity (XRD) and optical properties (absorption spectra and band gap). EPR data confirms the substitutional incorporation of Mn2+ in TiO2 lattice. The doping influences the phase transformation of rutile and anatase phase crystal and thereby the absorption spectrum changes were observed. The effect of variation of reaction parameters such as solvent, reaction time and calcination temperature on the yield, surface morphology and optical properties was also investigated. The TEM studies show the particle size of nanomaterials varies from 10-50 nm. The calculated band gap of nanomaterials varies from 2.30-2.60 eV. The photocatalytic degradation of organic pollutant organophosphate pesticide (Quinalphos) has been investigated by studying the changes in UV absorption spectrum and the promising results were obtained under visible light. The complete mineralization of quinalphos has occurred as no intermediates were recorded after 8 hrs of degradation confirmed from the HPLC studies.

Keywords: quinalphos, doped-TiO2, mineralization, EPR

Procedia PDF Downloads 328
1976 Theoretical Study of Substitutional Phosphorus and Nitrogen Pairs in Diamond

Authors: Tahani Amutairi, Paul May, Neil Allan

Abstract:

Many properties of semiconductor materials (mechanical, electronic, magnetic, and optical) can be significantly modified by introducing a point defect. Diamond offers extraordinary properties as a semiconductor, and doping seems to be a viable method of solving the problem associated with the fabrication of diamond-based electronic devices in order to exploit those properties. The dopants are believed to play a significant role in reducing the energy barrier to conduction and controlling the mobility of the carriers and the resistivity of the film. Although it has been proven that the n-type diamond semiconductor can be obtained with phosphorus doping, the resulting ionisation energy and mobility are still inadequate for practical application. Theoretical studies have revealed that this is partly because the effects of the many phosphorus atoms incorporated in the diamond lattice are compensated by acceptor states. Using spin-polarised hybrid density functional theory and a supercell approach, we explored the effects of bonding one N atom to a P in adjacent substitutional sites in diamond. A range of hybrid functional, including HSE06, B3LYP, PBE0, PBEsol0, and PBE0-13, were used to calculate the formation, binding, and ionisation energies, in order to explore the solubility and stability of the point defect. The equilibrium geometry and the magnetic and electronic structures were analysed and presented in detail. The defect introduces a unique reconstruction in a diamond where one of the C atoms coordinated with the N atom involved in the elongated C-N bond and creates a new bond with the P atom. The simulated infrared spectra of phosphorus-nitrogen defects were investigated with different supercell sizes and found to contain two sharp peaks at the edges of the spectrum, one at a high frequency 1,379 cm⁻¹ and the second appearing at the end range, 234 cm⁻¹, as obtained with the largest supercell (216).

Keywords: DFT, HSE06, B3LYP, PBE0, PBEsol0, PBE0-13

Procedia PDF Downloads 84
1975 Design of Bidirectional Wavelength Division Multiplexing Passive Optical Network in Optisystem Environment

Authors: Ashiq Hussain, Mahwash Hussain, Zeenat Parveen

Abstract:

Now a days the demand for broadband service has increased. Due to which the researchers are trying to find a solution to provide a large amount of service. There is a shortage of bandwidth because of the use of downloading video, voice and data. One of the solutions to overcome this shortage of bandwidth is to provide the communication system with passive optical components. We have increased the data rate in this system. From experimental results we have concluded that the quality factor has increased by adding passive optical networks.

Keywords: WDM-PON, optical fiber, BER, Q-factor, eye diagram

Procedia PDF Downloads 509
1974 Crystalline Silicon Optical Whispering Gallery Mode (WGM) Resonators for Precision Measurements

Authors: Igor Bilenko, Artem Shitikov, Michael Gorodetsky

Abstract:

Optical whispering gallery mode (WGM) resonators combine very high optical quality factor (Q) with small size. Resonators made from low loss crystalline fluorites (CaF2, MgF2) may have Q as high as 1010 that make them unique devices for modern applications including ultrasensitive sensors, frequency control, and precision spectroscopy. While silicon is a promising material transparent from near infrared to terahertz frequencies, fundamental limit for Si WGM quality factor was not reached yet. In our paper, we presented experimental results on the preparation and testing of resonators at 1550 nm wavelength made from crystalline silicon grown and treated by different techniques. Q as high as 3x107 was demonstrated. Future steps need to reach a higher value and possible applications are discussed.

Keywords: optical quality factor, silicon optical losses, silicon optical resonator, whispering gallery modes

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1973 Semiconductor Nanofilm Based Schottky-Barrier Solar Cells

Authors: Mariyappan Shanmugam, Bin Yu

Abstract:

Schottky-barrier solar cells are demonstrated employing 2D-layered MoS2 and WS2 semiconductor nanofilms as photo-active material candidates synthesized by chemical vapor deposition method. Large area MoS2 and WS2 nanofilms are stacked by layer transfer process to achieve thicker photo-active material studied by atomic force microscopy showing a thickness in the range of ~200 nm. Two major vibrational active modes associated with 2D-layered MoS2 and WS2 are studied by Raman spectroscopic technique to estimate the quality of the nanofilms. Schottky-barrier solar cells employed MoS2 and WS2 active materials exhibited photoconversion efficiency of 1.8 % and 1.7 % respectively. Fermi-level pinning at metal/semiconductor interface, electronic transport and possible recombination mechanisms are studied in the Schottky-barrier solar cells.

Keywords: two-dimensional nanosheet, graphene, hexagonal boron nitride, solar cell, Schottky barrier

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1972 Internal Node Stabilization for Voltage Sense Amplifiers in Multi-Channel Systems

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer by the parasitic capacitances of the input transistors in a voltage sense amplifier. Due to its intrinsic rail-to-rail voltage transition, the input sides are inevitably disturbed. It can possible disturb the stabilities of the reference voltage levels. Moreover, it becomes serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the systems. In order to alleviate the internal node voltage transition, the internal node stabilization technique is proposed by utilizing an additional biasing circuit. It achieves 47% and 43% improvements for node stabilization and input referred disturbance, respectively.

Keywords: voltage sense amplifier, voltage transition, node stabilization, biasing circuits

Procedia PDF Downloads 479
1971 Optical Bands Splitting in Tm₃Fe₅O₁₂ Thin Films

Authors: R. Vidyasagar, G. L. S. Vilela, B. M. Guiraldelli, A. B. Henriques, J. Moodera

Abstract:

Nano-scaled magnetic systems that can have both magnetic and optical transitions controlled and manipulated by external means have received enormous research attention for their potential applications in magneto-optics and spintronic devices. Among several ferrimagnetic insulators, the Tm₃Fe₅O₁₂ (TmIG) has become a prototype material displaying huge perpendicular magnetic anisotropy. Nevertheless, the optical properties of nano-scale TnIG films have not yet been investigated. We report the observation of giant splitting in the optical transitions of high-quality thin films of Tm₃Fe₅O₁₂ (TmIG) grown by rf sputtering on gadolinium gallium garnet substrates (GGG-111) substrate. The optical absorbance profiles measured with optical absorption spectroscopy show a dual optical transition in visible frequency regimes attributed to the transitions of electrons from the O-2p valence band to the Fe-3d conduction band and from the O-2p valence band to the Fe-2p⁵3d⁶ excitonic states at the Γ-symmetric point of the TmIG Brillouin zone. When the thickness of the film is reduced from 120 nm to 7.5 nm, the 1st optical transition energy shifted from 2.98 to 3.11 eV ( ~130 meV), and the 2nd transition energy shifted from 2.62 to 2.56 eV (~ 60 meV). The giant band splitting of both transitions can be attributed to the population of excited states associated with the atomic modification pertaining to the compressive or tensile strains.

Keywords: optical transitions, thin films, ferrimagnetic insulator, strains

Procedia PDF Downloads 49
1970 Dynamic Bandwidth Allocation in Fiber-Wireless (FiWi) Networks

Authors: Eman I. Raslan, Haitham S. Hamza, Reda A. El-Khoribi

Abstract:

Fiber-Wireless (FiWi) networks are a promising candidate for future broadband access networks. These networks combine the optical network as the back end where different passive optical network (PON) technologies are realized and the wireless network as the front end where different wireless technologies are adopted, e.g. LTE, WiMAX, Wi-Fi, and Wireless Mesh Networks (WMNs). The convergence of both optical and wireless technologies requires designing architectures with robust efficient and effective bandwidth allocation schemes. Different bandwidth allocation algorithms have been proposed in FiWi networks aiming to enhance the different segments of FiWi networks including wireless and optical subnetworks. In this survey, we focus on the differentiating between the different bandwidth allocation algorithms according to their enhancement segment of FiWi networks. We classify these techniques into wireless, optical and Hybrid bandwidth allocation techniques.

Keywords: fiber-wireless (FiWi), dynamic bandwidth allocation (DBA), passive optical networks (PON), media access control (MAC)

Procedia PDF Downloads 531
1969 Evaluation of a Method for the Virtual Design of a Software-based Approach for Electronic Fuse Protection in Automotive Applications

Authors: Dominic Huschke, Rudolf Keil

Abstract:

New driving functionalities like highly automated driving have a major impact on the electrics/electronics architecture of future vehicles and inevitably lead to higher safety requirements. Partly due to these increased requirements, the vehicle industry is increasingly looking at semiconductor switches as an alternative to conventional melting fuses. The protective functionality of semiconductor switches can be implemented in hardware as well as in software. A current approach discussed in science and industry is the implementation of a model of the protected low voltage power cable on a microcontroller to calculate its temperature. Here, the information regarding the current is provided by the continuous current measurement of the semiconductor switch. The signal to open the semiconductor switch is provided by the microcontroller when a previously defined limit for the temperature of the low voltage power cable is exceeded. A setup for the testing of the described principle for electronic fuse protection of a low voltage power cable is built and successfullyvalidated with experiments afterwards. Here, the evaluation criterion is the deviation of the measured temperature of the low voltage power cable from the specified limit temperature when the semiconductor switch is opened. The analysis is carried out with an assumed ambient temperature as well as with a measured ambient temperature. Subsequently, the experimentally performed investigations are simulated in a virtual environment. The explicit focus is on the simulation of the behavior of the microcontroller with an implemented model of a low voltage power cable in a real-time environment. Subsequently, the generated results are compared with those of the experiments. Based on this, the completely virtual design of the described approach is assumed to be valid.

Keywords: automotive wire harness, electronic fuse protection, low voltage power cable, semiconductor-based fuses, software-based validation

Procedia PDF Downloads 105
1968 Dimensional-Controlled Functional Gold Nanoparticles and Zinc Oxide Nanorods for Solar Water Splitting

Authors: Kok Hong Tan, Hing Wah Lee, Jhih-Wei Chen, Chang Fu Dee, Chung-Lin Wu, Siang-Piao Chai, Wei Sea Chang

Abstract:

Semiconductor photocatalyst is known as one of the key roles in developing clean and sustainable energy. However, most of the semiconductor only possesses photoactivity within the UV light region, and hence, decreases the overall photocatalyst efficiency. Generally, the overall effectiveness of the photocatalyst activity is determined by three critical steps: (i) light absorption efficiency and photoexcitation electron-hole pair generation, (ii) separation and migration of charge carriers to the surface of the photocatalyst, and (iii) surface reaction of the carriers with its environment. Much effort has been invested on optimizing hierarchical nanostructures of semiconductors for efficient photoactivity due to the fact that the visible light absorption capability and occurrence of the chemical reactions mostly depend on the dimension of photocatalysts. In this work, we incorporated zero-dimensional (0D) gold nanoparticles (AuNPs) and one dimensional (1D) Zinc Oxide (ZnO) nanorods (NRs) onto strontium titanate (STO) for efficient visible light absorption, charge transfer, and separation. We demonstrate that the electrical and optical properties of the photocatalyst can be tuned by controlling the dimensional structures of AuNPs and ZnO NRs. We found that smaller AuNPs sizes exhibited higher photoactivity because of Fermi level shifting toward the conductive band of STO, STO band gap narrowing and broadening of absorption spectrum to the visible light region. For ZnO NRs, it was found that the average ZnO NRs c-axis length must achieve of certain length to induce multiphoton absorption as a result of light reflection and trapping behavior in the free space between adjacent ZnO NRs hence broadening the absorption spectrum of ZnO from UV to visible light region. This work opens up a new way of broadening the absorption spectrum by incorporating controllable nanostructures of semiconductors, which is important in optimizing the solar water splitting process.

Keywords: gold nanoparticles, photoelectrochemical, PEC, semiconductor photocatalyst, zinc oxide nanorods

Procedia PDF Downloads 160
1967 A Comparative Analysis of an All-Optical Switch Using Chalcogenide Glass and Gallium Arsenide Based on Nonlinear Photonic Crystal

Authors: Priyanka Kumari Gupta, Punya Prasanna Paltani, Shrivishal Tripathi

Abstract:

This paper proposes a nonlinear photonic crystal ring resonator-based all-optical 2 × 2 switch. The nonlinear Kerr effect is used to evaluate the essential 2 x 2 components of the photonic crystal-based optical switch, including the bar and cross states. The photonic crystal comprises a two-dimensional square lattice of dielectric rods in an air background. In the background air, two different dielectric materials are used for this comparison study separately. Initially with chalcogenide glass rods, then with GaAs rods. For both materials, the operating wavelength, bandgap diagram, operating power intensities, and performance parameters, such as the extinction ratio, insertion loss, and cross-talk of an optical switch, have also been estimated using the plane wave expansion and the finite-difference time-domain method. The chalcogenide glass material (Ag20As32Se48) has a high refractive index of 3.1 which is highly suitable for switching operations. This dielectric material is immersed in an air background with a nonlinear Kerr coefficient of 9.1 x 10-17 m2/W. The resonance wavelength is at 1552 nm, with the operating power intensities at the cross-state and bar state around 60 W/μm2 and 690 W/μm2. The extinction ratio, insertion loss, and cross-talk value for the chalcogenide glass at the cross-state are 17.19 dB, 0.051 dB, and -17.14 dB, and the bar state, the values are 11.32 dB, 0.025 dB, and -11.35 dB respectively. The gallium arsenide (GaAs) dielectric material has a high refractive index of 3.4, a direct bandgap semiconductor material highly preferred nowadays for switching operations. This dielectric material is immersed in an air background with a nonlinear Kerr coefficient of 3.1 x 10-16 m2/W. The resonance wavelength is at 1558 nm, with the operating power intensities at the cross-state and bar state around 110 W/μm2 and 200 W/μm2. The extinction ratio, insertion loss, and cross-talk value for the chalcogenide glass at the cross-state are found to be 3.36.19 dB, 2.436 dB, and -5.8 dB, and for the bar state, the values are 15.60 dB, 0.985 dB, and -16.59 dB respectively. This paper proposes an all-optical 2 × 2 switch based on a nonlinear photonic crystal using a ring resonator. The two-dimensional photonic crystal comprises a square lattice of dielectric rods in an air background. The resonance wavelength is in the range of photonic bandgap. Later, another widely used material, GaAs, is also considered, and its performance is compared with the chalcogenide glass. Our presented structure can be potentially applicable in optical integration circuits and information processing.

Keywords: photonic crystal, FDTD, ring resonator, optical switch

Procedia PDF Downloads 77
1966 A Simple Low-Cost 2-D Optical Measurement System for Linear Guideways

Authors: Wen-Yuh Jywe, Bor-Jeng Lin, Jing-Chung Shen, Jeng-Dao Lee, Hsueh-Liang Huang, Tung-Hsien Hsieh

Abstract:

In this study, a simple 2-D measurement system based on optical design was developed to measure the motion errors of the linear guideway. Compared with the transitional methods about the linear guideway for measuring the motion errors, our proposed 2-D optical measurement system can simultaneously measure horizontal and vertical running straightness errors for the linear guideway. The performance of the 2-D optical measurement system is verified by experimental results. The standard deviation of the 2-D optical measurement system is about 0.4 μm in the measurement range of 100 mm. The maximum measuring speed of the proposed automatic measurement instrument is 1 m/sec.

Keywords: 2-D measurement, linear guideway, motion errors, running straightness

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1965 Influence of Thickness on Optical Properties of ZnO Thin Films Prepared by Radio Frequency (RF) Sputtering Technique

Authors: S. Abdullahi, M. Momoh, K. U. Isah

Abstract:

Zinc oxide (ZnO) thin films of 75.5 nm and 130.5 nm were deposited at room temperature onto chemically and ultrasonically cleaned corning glass substrate by radio frequency technique and annealed at 150°C under nitrogen atmosphere for 60 minutes. The optical properties of the films were ascertained by UV-VIS-NIR spectrophotometry. Influence of the thickness of the films on the optical properties was studied keeping other deposition parameters constant. The optical transmittance spectra reveal a maximum transmittance of 81.49% and 84.26% respectively. The band gap of the films is found to be direct allowed transition and decreases with the increase in thickness of the films. The band gap energy (Eg) is in the range of 3.28 eV to 3.31 eV, respectively. These thin films are suitable for solar cell applications.

Keywords: optical constants, RF sputtering, Urbach energy, zinc oxide thin film

Procedia PDF Downloads 457
1964 Stabilization Technique for Multi-Inputs Voltage Sense Amplifiers in Node Sharing Converters

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer through the parasitic capacitances of the input transistors in a multi-inputs voltage sense amplifier. Its intrinsic rail-to-rail voltage transitions at the output nodes inevitably disturb the input sides through the capacitive coupling between the outputs and inputs. Then, it can possible degrade the stabilities of the reference voltage levels. Moreover, it becomes more serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the overall systems. In order to alleviate the internal node voltage transition, the internal node stabilization techniques are proposed. It achieves 45% and 40% improvements for node stabilization and input referred disturbance, respectively.

Keywords: voltage sense amplifier, multi-inputs, voltage transition, node stabilization, biasing circuits

Procedia PDF Downloads 565
1963 Nano-Coating for Corrosion Prevention

Authors: M. J. Suriani, F. Mansor, W. Siti Maizurah, I. Nurizwani

Abstract:

Silicon Carbide (SiC) is one of the Silicon-based materials, which get interested by the researcher. SiC is an emerging semiconductor material, which has received a great deal of attention due to their application in high frequency and high power systems. Although its superior characteristic for a semiconductor material, its outstanding mechanical properties, chemical inertness and thermal stability has gained important aspect for a surface coating for deployment in extreme environments. Very high frequency (VHF)-PECVD technique utilized to deposit nano ns-SiC film in which variation in chamber pressure, substrate temperature, RF power and precursor gases flow rate will be investigated in order to get a good quality of thin film coating. Characterization of the coating performed in order to study the surface morphology, structural information. This performance of coating evaluated through corrosion test to determine the effectiveness of the coating for corrosion prevention. Ns-SiC film expected to possess better corrosion resistance and optical properties, as well as preserving the metal from the marine environment. Through this research project, corrosion protection performance by applying coating will be explored to obtain a great corrosion prevention method to the shipping and oil and gas industry in Malaysia. Besides, the cost of repair and maintenance spending by the government of Malaysia can be reduced through practicing this method.

Keywords: composite materials, marine corrosion, nano-composite, nano structure–coating

Procedia PDF Downloads 470
1962 Application to Molecular Electronics of Thin Layers of Organic Materials

Authors: M. I. Benamrani, H. Benamrani

Abstract:

In the research to replace silicon and other thin-film semiconductor technologies and to develop long-term technology that is environmentally friendly, low-cost, and abundant, there is growing interest today given to organic materials. Our objective is to prepare polymeric layers containing metal particles deposited on a surface of semiconductor material which can have better electrical properties and which could be applied in the fields of nanotechnology as an alternative to the existing processes involved in the design of electronic circuits. This work consists in the development of composite materials by complexation and electroreduction of copper in a film of poly (pyrrole benzoic acid). The deposition of the polymer film on a monocrystalline silicon substrate is made by electrochemical oxidation in an organic medium. The incorporation of copper particles into the polymer is achieved by dipping the electrode in a solution of copper sulphate to complex the cupric ions, followed by electroreduction in an aqueous solution to precipitate the copper. In order to prepare the monocrystalline silicon substrate as an electrode for electrodeposition, an in-depth study on its surface state was carried out using photoacoustic spectroscopy. An analysis of the optical properties using this technique on the effect of pickling using a chemical solution was carried out. Transmission-photoacoustic and impedance spectroscopic techniques give results in agreement with those of photoacoustic spectroscopy.

Keywords: photoacoustic, spectroscopy, copper sulphate, chemical solution

Procedia PDF Downloads 88
1961 All Optical Wavelength Conversion Based On Four Wave Mixing in Optical Fiber

Authors: Surinder Singh, Gursewak Singh Lovkesh

Abstract:

We have designed wavelength conversion based on four wave mixing in an optical fiber at 10 Gb/s. The power of converted signal increases with increase in signal power. The converted signal power is investigated as a function of input signal power and pump power. On comparison of converted signal power at different value of input signal power, we observe that best converted signal power is obtained at -2 dBm input signal power for both up conversion as well as for down conversion. Further, FWM efficiency, quality factor is observed for increase in input signal power and optical fiber length.

Keywords: FWM, optical fiiber, wavelngth converter, quality

Procedia PDF Downloads 579
1960 Investigation on Performance of Optical Shutter Panels for Transparent Displays

Authors: Jaehong Kim, Sunhee Park, HongSeop Shin, Kyongho Lim, Suhyun Kwon, Don-Gyou Lee, Pureum Kim, Moojong Lim, JongSang Baek

Abstract:

Transparent displays with OLEDs are the most commonly produced forms of see-through displays on the market or in development. In order to block the visual interruption caused by the light coming from the background, the special panel is combined with transparent displays with OLEDs. There is, however, few studies performance of optical shutter panel for transparent displays until now. This paper, therefore, describes the performance of optical shutter panels. The novel evaluation method was developed by measuring the amount of light which can form a transmitted background image. The new proposed method could tell how recognizable transmitted background images cannot be seen, and is consistent with viewer’s perception.

Keywords: optical shutter panel, optical performance, transparent display, visual interruption

Procedia PDF Downloads 529
1959 Effect of the Deposition Time of Hydrogenated Nanocrystalline Si Grown on Porous Alumina Film on Glass Substrate by Plasma Processing Chemical Vapor Deposition

Authors: F. Laatar, S. Ktifa, H. Ezzaouia

Abstract:

Plasma Enhanced Chemical Vapor Deposition (PECVD) method is used to deposit hydrogenated nanocrystalline silicon films (nc-Si: H) on Porous Anodic Alumina Films (PAF) on glass substrate at different deposition duration. Influence of the deposition time on the physical properties of nc-Si: H grown on PAF was investigated through an extensive correlation between micro-structural and optical properties of these films. In this paper, we present an extensive study of the morphological, structural and optical properties of these films by Atomic Force Microscopy (AFM), X-Ray Diffraction (XRD) techniques and a UV-Vis-NIR spectrometer. It was found that the changes in DT can modify the films thickness, the surface roughness and eventually improve the optical properties of the composite. Optical properties (optical thicknesses, refractive indexes (n), absorption coefficients (α), extinction coefficients (k), and the values of the optical transitions EG) of this kind of samples were obtained using the data of the transmittance T and reflectance R spectra’s recorded by the UV–Vis–NIR spectrometer. We used Cauchy and Wemple–DiDomenico models for the analysis of the dispersion of the refractive index and the determination of the optical properties of these films.

Keywords: hydragenated nanocrystalline silicon, plasma processing chemical vapor deposition, X-ray diffraction, optical properties

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1958 Comparative Performance Analysis of Fiber Delay Line Based Buffer Architectures for Contention Resolution in Optical WDM Networks

Authors: Manoj Kumar Dutta

Abstract:

Wavelength division multiplexing (WDM) technology is the most promising technology for the proper utilization of huge raw bandwidth provided by an optical fiber. One of the key problems in implementing the all-optical WDM network is the packet contention. This problem can be solved by several different techniques. In time domain approach the packet contention can be reduced by incorporating fiber delay lines (FDLs) as optical buffer in the switch architecture. Different types of buffering architectures are reported in literatures. In the present paper a comparative performance analysis of three most popular FDL architectures are presented in order to obtain the best contention resolution performance. The analysis is further extended to consider the effect of different fiber non-linearities on the network performance.

Keywords: WDM network, contention resolution, optical buffering, non-linearity, throughput

Procedia PDF Downloads 451
1957 Use Cases Analysis of Free Space Optical Communication System

Authors: Kassem Saab, Fritzen Bart, Yves-Marie Seveque

Abstract:

The deployment of Free Space Optical Communications (FSOC) systems requires the development of robust and reliable Optical Ground Stations (OGS) that can be easily installed and operated. To this end, the Engineering Department of Airbus Defence and Space is actively working on the development of innovative and compact OGS solutions that can be deployed in various environments and provide high-quality connectivity under different atmospheric conditions. This article presents an overview of our recent developments in this field, including an evaluation study of different use cases of the FSOC with respect to different atmospheric conditions. The goal is to provide OGS solutions that are both simple and highly effective, allowing for the deployment of high-speed communication networks in a wide range of scenarios.

Keywords: end to end optical communication, laser propagation, optical ground station, turbulence

Procedia PDF Downloads 94
1956 Semiconductor Supported Gold Nanoparticles for Photodegradation of Rhodamine B

Authors: Ahmad Alshammari, Abdulaziz Bagabas, Muhamad Assulami

Abstract:

Rhodamine B (RB) is a toxic dye used extensively in textile industry, which must be remediated before its drainage to the environment. In the present study, supported gold nanoparticles on commercially available titania and zincite were successfully prepared and then their activity on the photodegradation of RB under UV-A light irradiation were evaluated. The synthesized photocatalysts were characterized by ICP, BET, XRD, and TEM. Kinetic results showed that Au/TiO2 was an inferior photocatalyst to Au/ZnO. This observation could be attributed to the strong reflection of UV irradiation by gold nanoparticles over TiO2 support.

Keywords: supported AuNPs, semiconductor photocatalyst, photodegradation, rhodamine B

Procedia PDF Downloads 454
1955 A Rapid Code Acquisition Scheme in OOC-Based CDMA Systems

Authors: Keunhong Chae, Seokho Yoon

Abstract:

We propose a code acquisition scheme called improved multiple-shift (IMS) for optical code division multiple access systems, where the optical orthogonal code is used instead of the pseudo noise code. Although the IMS algorithm has a similar process to that of the conventional MS algorithm, it has a better code acquisition performance than the conventional MS algorithm. We analyze the code acquisition performance of the IMS algorithm and compare the code acquisition performances of the MS and the IMS algorithms in single-user and multi-user environments.

Keywords: code acquisition, optical CDMA, optical orthogonal code, serial algorithm

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1954 Modeling Reflection and Transmission of Elastodiffussive Wave Sata Semiconductor Interface

Authors: Amit Sharma, J. N. Sharma

Abstract:

This paper deals with the study of reflection and transmission characteristics of acoustic waves at the interface of a semiconductor halfspace and elastic solid. The amplitude ratios (reflection and transmission coefficients) of reflected and transmitted waves to that of incident wave varying with the incident angles have been examined for the case of quasi-longitudinal wave. The special cases of normal and grazing incidence have also been derived with the help of Gauss elimination method. The mathematical model consisting of governing partial differential equations of motion and charge carriers diffusion of n-type semiconductors and elastic solid has been solved both analytically and numerically in the study. The numerical computations of reflection and transmission coefficients has been carried out by using MATLAB programming software for silicon (Si) semiconductor and copper elastic solid. The computer simulated results have been plotted graphically for Si semiconductors. The study may be useful in semiconductors, geology, and seismology in addition to surface acoustic wave (SAW) devices.

Keywords: quasilongitudinal, reflection and transmission, semiconductors, acoustics

Procedia PDF Downloads 391