Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 1

perovskite semiconductor Related Abstracts

1 Preparation and Characterization of Hybrid Perovskite Enhanced with PVDF for Pressure Sensing

Authors: Mohamed E. Harb, Enas Moustafa, Shaker Ebrahim, Moataz Soliman

Abstract:

In this paper pressure detectors were synthesized and characterized using hybrid perovskite/PVDF composites as an active layer. Methylammonium lead iodide (MAPbI₃) was synthesized from methylammonium iodide (MAI) (CH₃NH₃I) and lead iodide (PbI₂). Composites of perovskite/PVDF using different weight ratio were prepared as the active material. PVDF with weights percentages of 6%, 8%, and 10% was used. All prepared materials were investigated by x-ray diffraction (XRD), Fourier transforms infrared spectrum (FTIR) and scanning electron microscopy (SEM). A Versastat 4 Potentiostat Galvanostat instrument was used to perform the current-voltage characteristics of the fabricated sensors. The pressure sensors exhibited a voltage increase with applying different forces. Also, the current-voltage characteristics (CV) showed different effects with applying forces. So, the results showed a good pressure sensing performance.

Keywords: Pressure Sensing, PVDF, hybrid perovskite, perovskite semiconductor

Procedia PDF Downloads 24