Commenced in January 2007
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micro-light-emitting diode array(μLEDA) Related Abstracts

1 Flip-Chip Bonding for Monolithic of Matrix-Addressable GaN-Based Micro-Light-Emitting Diodes Array

Authors: Chia-Ching Wu, Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Meng-Chyi Wu

Abstract:

A 64 × 64 GaN-based micro-light-emitting diode array (μLEDA) with 20 μm in pixel size and 40 μm in pitch by flip-chip bonding (FCB) is demonstrated in this study. Besides, an underfilling (UF) technology is applied to the process for improving the uniformity of device. With those configurations, good characteristics are presented, operation voltage and series resistance of a pixel in the 450 nm flip chip μLEDA are 2.89 V and 1077Ω (4.3 mΩ-cm²) at 25 A/cm², respectively. The μLEDA can sustain higher current density compared to conventional LED, and the power of the device is 9.5 μW at 100 μA and 0.42 mW at 20 mA.

Keywords: gan, micro-light-emitting diode array(μLEDA), flip-chip bonding, underfilling

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