Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 5

memristor Related Abstracts

5 Robust Single/Multi bit Memristor Based Memory

Authors: Ahmed Emara, Maged Ghoneima, Mohamed Dessouky

Abstract:

Demand for low power fast memories is increasing with the increase in IC’s complexity, in this paper we introduce a proposal for a compact SRAM based on memristor devices. The compact size of the proposed cell (1T2M compared to 6T of traditional SRAMs) allows denser memories on the same area. In this paper, we will discuss the proposed memristor memory cell for single/multi bit data storing configurations along with the writing and reading operations. Stored data stability across successive read operation will be illustrated, operational simulation results and a comparison of our proposed design with previously conventional SRAM and previously proposed memristor cells will be provided.

Keywords: Circuits, Systems, memristor, multi-bit, single-bit

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4 A Memristive Device with Intrinsic Rectification Behavior and Performace of Crossbar Arrays

Authors: Yansong Gao, Damith C.Ranasinghe, Siad F. Al-Sarawi, Omid Kavehei, Derek Abbott

Abstract:

Passive crossbar arrays is in principle the simplest functional electrical circuit, together with memristive device in cross-point, holding great promise in future high-density, non-volatile memories. However, the greatest problem of crossbar array is the sneak path current. In this paper, we investigate one type of memristive device with intrinsic rectification behavior to address the sneak path currents. Firstly, a SPICE behavior model written in Verilog-A language of the memristive device is presented to fit experimental data published in literature. Next, systematic performance simulations including read margin and power consumption of crossbar array, which uses the self-rectifying memristive device as storage element at cross-point, with respect to different crossbar sizes, interconnect resistance, ratio of HRS/LRS (High Resistance State/ Low Resistance State), rectification ratio and different read schemes are conducted. Subsequently, Trade-offs among reading margin, power consumption, and reading schemes are analyzed to provide guidelines for circuit design. Finally, performance comparison between the memristive device with/without intrinsic rectification behavior is given to show the worthiness of this intrinsic rectification behavior.

Keywords: Power Consumption, memristor, memristive device, crossbar, RRAM, read margin

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3 Bifurcation and Chaos of the Memristor Circuit

Authors: Wang Zhulin, Min Fuhong, Peng Guangya, Wang Yaoda, Cao Yi

Abstract:

In this paper, a magnetron memristor model based on hyperbolic sine function is presented and the correctness proved by studying the trajectory of its voltage and current phase, and then a memristor chaotic system with the memristor model is presented. The phase trajectories and the bifurcation diagrams and Lyapunov exponent spectrum of the magnetron memristor system are plotted by numerical simulation, and the chaotic evolution with changing the parameters of the system is also given. The paper includes numerical simulations and mathematical model, which confirming that the system, has a wealth of dynamic behavior.

Keywords: chaotic system, memristor, chaotic circuit, dynamical behavior

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2 Noise and Thermal Analyses of Memristor-Based Phase Locked Loop Integrated Circuit

Authors: Naheem Olakunle Adesina

Abstract:

The memristor is considered as one of the promising candidates for mamoelectronic engineering and applications. Owing to its high compatibility with CMOS, nanoscale size, and low power consumption, memristor has been employed in the design of commonly used circuits such as phase-locked loop (PLL). In this paper, we designed a memristor-based loop filter (LF) together with other components of PLL. Following this, we evaluated the noise-rejection feature of loop filter by comparing the noise levels of input and output signals of the filter. Our SPICE simulation results showed that memristor behaves like a linear resistor at high frequencies. The result also showed that loop filter blocks the high-frequency components from phase frequency detector so as to provide a stable control voltage to the voltage controlled oscillator (VCO). In addition, we examined the effects of temperature on the performance of the designed phase locked loop circuit. A critical temperature, where there is frequency drift of VCO as a result of variations in control voltage, is identified. In conclusion, the memristor is a suitable choice for nanoelectronic systems owing to a small area, low power consumption, dense nature, high switching speed, and endurance. The proposed memristor-based loop filter, together with other components of the phase locked loop, can be designed using memristive emulator and EDA tools in current CMOS technology and simulated.

Keywords: Noise, fast fourier transform, memristor, phase locked loop, hysteresis curve, loop filter, voltage controlled oscillator

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1 A Low-Cost Memristor Based on Hybrid Structures of Metal-Oxide Quantum Dots and Thin Films

Authors: Amir Shariffar, Haider Salman, Tanveer Siddique, Omar Manasreh

Abstract:

According to the recent studies on metal-oxide memristors, researchers tend to improve the stability, endurance, and uniformity of resistive switching (RS) behavior in memristors. Specifically, the main challenge is to prevent abrupt ruptures in the memristor’s filament during the RS process. To address this problem, we are proposing a low-cost hybrid structure of metal oxide quantum dots (QDs) and thin films to control the formation of filaments in memristors. We aim to use metal oxide quantum dots because of their unique electronic properties and quantum confinement, which may improve the resistive switching behavior. QDs have discrete energy spectra due to electron confinement in three-dimensional space. Because of Coulomb repulsion between electrons, only a few free electrons are contained in a quantum dot. This fact might guide the growth direction for the conducting filaments in the metal oxide memristor. As a result, it is expected that QDs can improve the endurance and uniformity of RS behavior in memristors. Moreover, we use a hybrid structure of intrinsic n-type quantum dots and p-type thin films to introduce a potential barrier at the junction that can smooth the transition between high and low resistance states. A bottom-up approach is used for fabricating the proposed memristor using different types of metal-oxide QDs and thin films. We synthesize QDs including, zinc oxide, molybdenum trioxide, and nickel oxide combined with spin-coated thin films of titanium dioxide, copper oxide, and hafnium dioxide. We employ fluorine-doped tin oxide (FTO) coated glass as the substrate for deposition and bottom electrode. Then, the active layer composed of one type of quantum dots, and the opposite type of thin films is spin-coated onto the FTO. Lastly, circular gold electrodes are deposited with a shadow mask by using electron-beam (e-beam) evaporation at room temperature. The fabricated devices are characterized using a probe station with a semiconductor parameter analyzer. The current-voltage (I-V) characterization is analyzed for each device to determine the conduction mechanism. We evaluate the memristor’s performance in terms of stability, endurance, and retention time to identify the optimal memristive structure. Finally, we assess the proposed hypothesis before we proceed to the optimization process for fabricating the memristor.

Keywords: Quantum Dot, thin film, memristor, resistive switching

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