Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 3

ISM band Related Abstracts

3 Multiband Prefractal Microstrip Antenna for Wireless Applications

Authors: Yadwinder Kumar, Priyanka Rani Amandeep Singh


In this paper the design of a multiband pre-fractal micro strip antenna with proximity coupling feed is presented. The proposed antenna resonates on seven different frequencies that are 2.6 GHz, 5.1 GHz, 9.4 GHz, 11.5 GHz, 13.8 GHz, 16.3 GHz, and 18.6 GHz. Simulated results presented here shows that the minimum return loss is achieved at the 16.3 GHz frequency which is up to 37 dB. Also the maximum band width of 700 MHz is achieved by the frequency bands 13.4 GHz to 14.1 GHz, 15.9 GHz to 16.6 GHz and 18.2 GHz to 18.9 GHz. The proposed feed line is sandwiched between two substrate layers and increases in the bandwidth of antenna has been observed up to 13% in comparison of micro strip feed line. Effect of key design parameters such as variation in substrate material, substrate height and feeding technique on antenna S-parameter have been investigated and discussed.

Keywords: electromagnetic coupling, fractal antenna, pre-fractals, micro strip antenna, ISM band, VSWR

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2 Design of a High Performance T/R Switch for 2.4 GHz RF Wireless Transceiver in 0.13 µm CMOS Technology

Authors: Mohammad Arif Sobhan Bhuiyan, Mamun Bin Ibne Reaz


The rapid advancement of CMOS technology, in the recent years, has led the scientists to fabricate wireless transceivers fully on-chip which results in smaller size and lower cost wireless communication devices with acceptable performance characteristics. Moreover, the performance of the wireless transceivers rigorously depends on the performance of its first block T/R switch. This article proposes a design of a high performance T/R switch for 2.4 GHz RF wireless transceivers in 0.13 µm CMOS technology. The switch exhibits 1- dB insertion loss, 37.2-dB isolation in transmit mode and 1.4-dB insertion loss, 25.6-dB isolation in receive mode. The switch has a power handling capacity (P1dB) of 30.9-dBm. Besides, by avoiding bulky inductors and capacitors, the size of the switch is drastically reduced and it occupies only (0.00296) mm2 which is the lowest ever reported in this frequency band. Therefore, simplicity and low chip area of the circuit will trim down the cost of fabrication as well as the whole transceiver.

Keywords: CMOS, ISM band, SPDT, t/r switch, transceiver

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1 Design Of High Sensitivity Transceiver for WSN

Authors: A. Anitha, M. Aishwariya


The realization of truly ubiquitous wireless sensor networks (WSN) demands Ultra-low power wireless communication capability. Because the radio transceiver in a wireless sensor node consumes more power when compared to the computation part it is necessary to reduce the power consumption. Hence, a low power transceiver is designed and implemented in a 120 nm CMOS technology for wireless sensor nodes. The power consumption of the transceiver is reduced still by maintaining the sensitivity. The transceiver designed combines the blocks including differential oscillator, mixer, envelope detector, power amplifiers, and LNA. RF signal modulation and demodulation is carried by On-Off keying method at 2.4 GHz which is said as ISM band. The transmitter demonstrates an output power of 2.075 mW while consuming a supply voltage of range 1.2 V-5.0 V. Here the comparison of LNA and power amplifier is done to obtain an amplifier which produces a high gain of 1.608 dB at receiver which is suitable to produce a desired sensitivity. The multistage RF amplifier is used to improve the gain at the receiver side. The power dissipation of the circuit is in the range of 0.183-0.323 mW. The receiver achieves a sensitivity of about -95 dBm with data rate of 1 Mbps.

Keywords: CMOS, ISM band, LNA, envelope detector, low power electronics, wireless transceiver

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