Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 5

internal friction Related Abstracts

5 Change of Internal Friction on Magnesium Alloy with 5.48% Al Dependence on the Temperature

Authors: Alan Vaško, Milan Uhríčik, Andrea Soviarová, Zuzana Dresslerová, Peter Palček

Abstract:

The article is focused on the analysis changes dependence on the temperature on the magnesium alloy with 5,48% Al, 0,813% Zn and 0,398% Mn by internal friction. Internal friction is a property of the material is measured on the ultrasonic resonant aparature at a frequency about f = 20470 Hz. The measured temperature range was from 30 °C up to 420 °C. Precisely measurement of the internal friction can be monitored ongoing structural changes and various mechanisms that prevent these changes.

Keywords: temperature, Resonant Frequency, Magnesium Alloy, internal friction

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4 Physical-Mechanical Characteristics of Monocrystalline Si1-xGex(X 0,02) Solid Solutions

Authors: I. Kurashvili, A. Sichinava, G. Bokuchava, G. Darsavelidze

Abstract:

Si-Ge solid solutions (bulk poly- and monocrystalline samples, thin films) are characterized by high perspectives for application in semiconductor devices, in particular, optoelectronics and microelectronics. In this light complex studying of structural state of the defects and structural-sensitive physical properties of Si-Ge solid solutions depending on the contents of Si and Ge components is very important. Present work deals with the investigations of microstructure, electrophysical characteristics, microhardness, internal friction and shear modulus of Si1-xGex(x≤0,02) bulk monocrystals conducted at a room temperatures. Si-Ge bulk crystals were obtained by Czochralski method in [111] crystallographic direction. Investigated monocrystalline Si-Ge samples are characterized by p-type conductivity and carriers concentration 5.1014-1.1015cm-3, dislocation density 5.103-1.104cm-2, microhardness according to Vickers method 900-1200 Kg/mm2. Investigate samples are characterized with 0,5x0,5x(10-15) mm3 sizes, oriented along [111] direction at torsion oscillations ≈1Hz, multistage changing of internal friction and shear modulus has been revealed in an interval of strain amplitude of 10-5-5.10-3. Critical values of strain amplitude have been determined at which hysteretic changes of inelastic characteristics and microplasticity are observed. The critical strain amplitude and elasticity limit values are also determined. Tendency to decrease of dynamic mechanical characteristics is shown with increasing Ge content in Si-Ge solid solutions. Observed changes are discussed from the point of view of interaction of various dislocations with point defects and their complexes in a real structure of Si-Ge solid solutions.

Keywords: Microhardness, Shear Modulus, monocrystalline, internal friction

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3 Influence of Boron Doping and Thermal Treatment on Internal Friction of Monocrystalline Si1-xGex(x≤0,02) Alloys

Authors: I. Kurashvili, A. Sichinava, G. Bokuchava, G. Darsavelidze, I. Tabatadze

Abstract:

The impact of boron doping on the internal friction (IF) and shear modulus temperature spectra of Si1-xGex(x≤0,02) monocrsytals has been investigated by reverse torsional pendulum oscillations characteristics testing. At room temperatures, microhardness and indentation modulus of the same specimens have been measured by dynamic ultra microhardness tester. It is shown that boron doping causes two kinds effect: At low boron concentration (~1015 cm-3) significant strengthening is revealed, while at the high boron concentration (~1019 cm-3) strengthening effect and activation characteristics of relaxation origin IF processes are reduced.

Keywords: Doping, Thermal treatment, Boron, internal friction, si-ge alloys

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2 Influence of Boron and Germanium Doping on Physical-Mechanical Properties of Monocrystalline Silicon

Authors: IA Kurashvili, Giorgi Darsavelidze, Giorgi Chubinidze, Marina Kadaria

Abstract:

Boron-doped Czochralski (CZ) silicon of p-type, widely used in the photovoltaic industry is suffering from the light-induced-degradation (LID) of bulk electrophysical characteristics. This is caused by specific metastable B-O defects, which are characterized by strong recombination activity. In this regard, it is actual to suppress B-O defects in CZ silicon. One of the methods is doping of silicon by different isovalent elements (Ge, C, Sn). The present work deals with the investigations of the influence of germanium doping on the internal friction and shear modulus amplitude dependences in the temperature interval of 600-800⁰C and 0.5-5 Hz frequency range in boron-containing monocrystalline silicon. Experimental specimens were grown by Czochralski method (CZ) in [111] direction. Four different specimens were investigated: Si+0,5at%Ge:B (5.1015cm-3), Si+0,5at%Ge:B (1.1019cm-3), Si+2at%Ge:B (5.1015cm-3) and Si+2at%Ge:B (1.1019cm-3). Increasing tendency of dislocation density and inhomogeneous distribution in silicon crystals with high content of boron and germanium were revealed by metallographic studies on the optical microscope of NMM-80RF/TRF. Weak increase of current carriers-holes concentration and slight decrease of their mobility were observed by Van der Pauw method on Ecopia HMS-3000 device. Non-monotonous changes of dislocation origin defects mobility and microplastic deformation characteristics influenced by measuring temperatures and boron and germanium concentrations were revealed. Possible mechanisms of changes of mechanical characteristics in Si-Ge experimental specimens were discussed.

Keywords: Shear Modulus, internal friction, dislocation, microplastic deformation

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1 Peculiarities of Internal Friction and Shear Modulus in 60Co γ-Rays Irradiated Monocrystalline SiGe Alloys

Authors: I. Kurashvili, G. Darsavelidze, I. Tabatadze, T. Kimeridze, G. Chubinidze

Abstract:

At present, a number of modern semiconductor devices based on SiGe alloys have been created in which the latest achievements of high technologies are used. These devices might cause significant changes to networking, computing, and space technology. In the nearest future new materials based on SiGe will be able to restrict the A3B5 and Si technologies and firmly establish themselves in medium frequency electronics. Effective realization of these prospects requires the solution of prediction and controlling of structural state and dynamical physical –mechanical properties of new SiGe materials. Based on these circumstances, a complex investigation of structural defects and structural-sensitive dynamic mechanical characteristics of SiGe alloys under different external impacts (deformation, radiation, thermal cycling) acquires great importance. Internal friction (IF) and shear modulus temperature and amplitude dependences of the monocrystalline boron-doped Si1-xGex(x≤0.05) alloys grown by Czochralski technique is studied in initial and 60Co gamma-irradiated states. In the initial samples, a set of dislocation origin relaxation processes and accompanying modulus defects are revealed in a temperature interval of 400-800 ⁰C. It is shown that after gamma-irradiation intensity of relaxation internal friction in the vicinity of 280 ⁰C increases and simultaneously activation parameters of high temperature relaxation processes reveal clear rising. It is proposed that these changes of dynamical mechanical characteristics might be caused by a decrease of the dislocation mobility in the Cottrell atmosphere enriched by the radiation defects.

Keywords: Shear Modulus, internal friction, gamma-irradiation, SiGe alloys

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