Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 10

gan Related Abstracts

10 Generation of Charged Nanoparticles in the Gas Phase and their Contribution to Deposition of GaN Films and Nanostructures during Atmospheric Pressure Chemical Vapor Deposition

Authors: Nong-Moon Hwang, Jin-Woo Park, Sung-Soo Lee

Abstract:

The generation of charged nanoparticles in the gas phase during the Chemical Vapor Deposition (CVD) process has been frequently reported with their subsequent deposition into films and nanostructures in many systems such as carbon, silicon and zinc oxide. The microstructure evolution of films and nanostructures is closely related with the size distribution of charged nanoparticles. To confirm the generation of charged nanoparticles during GaN, the generation of GaN charged nanoparticles was examined in an atmospheric pressure CVD process using a Differential Mobility Analyser (DMA) combined with a Faraday Cup Electrometer (FCE). It was confirmed that GaN charged nanoparticles were generated under the condition where GaN nanostructures were synthesized on the bare and Au-coated Si substrates. In addition, the deposition behaviour depends strongly on the charge transfer rate of metal substrates. On the metal substrates of a lower CTR such as Mo, the deposition rate of GaN was much lower than on those of a higher CTR such as Fe. GaN nanowires tend to grow on the substrates of a lower CTR whereas GaN thin films tend to be deposited on the substrates of a higher CTR.

Keywords: Nanostructures, chemical vapour deposition, charged cluster model, generation of charged nanoparticles, deposition behaviour, gan, charged transfer rate

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9 Computer Software for Calculating Electron Mobility of Semiconductors Compounds; Case Study for N-Gan

Authors: Emad A. Ahmed

Abstract:

Computer software to calculate electron mobility with respect to different scattering mechanism has been developed. This software is adopted completely Graphical User Interface (GUI) technique and its interface has been designed by Microsoft Visual Basic 6.0. As a case study the electron mobility of n-GaN was performed using this software. The behaviour of the mobility for n-GaN due to elastic scattering processes and its relation to temperature and doping concentration were discussed. The results agree with other available theoretical and experimental data.

Keywords: Computer Software, Scattering, gan, electron mobility, relaxation time, computation physics

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8 Theoretical Investigations on Optical Properties of GaFeMnN Quaternary Compound

Authors: W. Benstaali, A. Abbad, H. A. Bentounes

Abstract:

Using first principles calculations based on the density functional theory and local spin density approximation, we investigate optical properties of GaFeMnN quaternary compound. Results show that optical properties confirm that GaFeMnN can be a good candidate in the design of thin film solar cells in the visible and ultraviolet parts of the spectrum, and a good sensor in the infrared

Keywords: gan, optical absorption, semi-metallic, dielectric function

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7 Polarization Dependent Flexible GaN Film Nanogenerators and Electroluminescence Properties

Authors: Jeong Min Baik

Abstract:

We present that the electroluminescence (EL) properties and electrical output power of flexible N-face p-type GaN thin films can be tuned by strain-induced piezo-potential generated across the metal-semiconductor-metal structures. Under different staining conditions (convex and concave bending modes), the transport properties of the GaN films can be changed due to the spontaneous polarization of the films. The I-V characteristics with the bending modes show that the convex bending can increase the current across the films by the decrease in the barrier height at the metal-semiconductor contact, increasing the EL intensity of the P-N junction. At convex bending, it is also shown that the flexible p-type GaN films can generate an output voltage of up to 1.0 V, while at concave bending, 0.4 V. The change of the band bending with the crystal polarity of GaN films was investigated using high-resolution photoemission spectroscopy. This study has great significance on the practical applications of GaN in optoelectronic devices and nanogenerators under a working environment.

Keywords: flexible, gan, laser lift-off, nanogenerator

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6 Effect of Precursor’s Grain Size on the Conversion of Microcrystalline Gallium Antimonide GaSb to Nanocrystalline Gallium Nitride GaN

Authors: Jerzy F. Janik, Mariusz Drygas, Miroslaw M. Bucko

Abstract:

A simple precursor system has been recently developed in our laboratory for the conversion of affordable microcrystalline gallium antimonide GaSb to a range of nanocrystalline powders of gallium nitride GaN – a wide bandgap semiconductor indispensable in modern optoelectronics. The process relies on high temperature nitridation reactions of GaSb with ammonia. Topochemical relationships set up by the cubic lattice of GaSb result in some metastable cubic GaN formed in addition to the stable hexagonal GaN. A prior application of high energy ball milling to the initially microcrystalline GaSb precursor is shown to alter the nitridation output.

Keywords: gan, nanocrystalline, gallium nitride, gallium antimonide, GaSb, nitridation, ball milling

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5 A Spectroscopic Study by Photoluminescence of Erbium in Gallium Nitride

Authors: A. Melouah, M. Diaf

Abstract:

The III-N nitride semiconductors appear to be excellent host materials, in particular, GaN epilayers doped with Erbium ions have shown a highly reduced thermal quenching of the Er luminescence intensity from cryogenic to elevated temperatures. The remarkable stability may be due to the large energy band gap of the material. Two methods are used for doping the Gallium nitride films with Erbium ions; ion implantation in the wafers obtained by (CVDOM) and in-situ incorporation during epitaxial growth of the layers by (MBE). Photoluminescence (PL) spectroscopy has been the main optical technique used to characterize the emission of Er-doped III-N semiconductor materials. This technique involves optical excitation of Er3+ ions and measurement of the spectrum of the light emission as a function of energy (wavelength). Excitation at above band gap energy leads to the creation of Electron-Hole pairs. Some of this pairs may transfer their energy to the Er3+ ions, exciting the 4f-electrons and resulting in optical emission. This corresponds to an indirect excitation of the Er3+ ions by electron-hole pairs. The direct excitation by the optical pumping of the radiation can be obtained.

Keywords: Photoluminescence, gan, erbium, semiconductor materials

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4 Flip-Chip Bonding for Monolithic of Matrix-Addressable GaN-Based Micro-Light-Emitting Diodes Array

Authors: Chia-Ching Wu, Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Meng-Chyi Wu

Abstract:

A 64 × 64 GaN-based micro-light-emitting diode array (μLEDA) with 20 μm in pixel size and 40 μm in pitch by flip-chip bonding (FCB) is demonstrated in this study. Besides, an underfilling (UF) technology is applied to the process for improving the uniformity of device. With those configurations, good characteristics are presented, operation voltage and series resistance of a pixel in the 450 nm flip chip μLEDA are 2.89 V and 1077Ω (4.3 mΩ-cm²) at 25 A/cm², respectively. The μLEDA can sustain higher current density compared to conventional LED, and the power of the device is 9.5 μW at 100 μA and 0.42 mW at 20 mA.

Keywords: gan, micro-light-emitting diode array(μLEDA), flip-chip bonding, underfilling

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3 Deep Learning Based Text to Image Synthesis for Accurate Facial Composites in Criminal Investigations

Authors: Zhao Gao, Eran Edirisinghe

Abstract:

The production of an accurate sketch of a suspect based on a verbal description obtained from a witness is an essential task for most criminal investigations. The criminal investigation system employs specifically trained professional artists to manually draw a facial image of the suspect according to the descriptions of an eyewitness for subsequent identification. Within the advancement of Deep Learning, Recurrent Neural Networks (RNN) have shown great promise in Natural Language Processing (NLP) tasks. Additionally, Generative Adversarial Networks (GAN) have also proven to be very effective in image generation. In this study, a trained GAN conditioned on textual features such as keywords automatically encoded from a verbal description of a human face using an RNN is used to generate photo-realistic facial images for criminal investigations. The intention of the proposed system is to map corresponding features into text generated from verbal descriptions. With this, it becomes possible to generate many reasonably accurate alternatives to which the witness can use to hopefully identify a suspect from. This reduces subjectivity in decision making both by the eyewitness and the artist while giving an opportunity for the witness to evaluate and reconsider decisions. Furthermore, the proposed approach benefits law enforcement agencies by reducing the time taken to physically draw each potential sketch, thus increasing response times and mitigating potentially malicious human intervention. With publically available 'CelebFaces Attributes Dataset' (CelebA) and additionally providing verbal description as training data, the proposed architecture is able to effectively produce facial structures from given text. Word Embeddings are learnt by applying the RNN architecture in order to perform semantic parsing, the output of which is fed into the GAN for synthesizing photo-realistic images. Rather than the grid search method, a metaheuristic search based on genetic algorithms is applied to evolve the network with the intent of achieving optimal hyperparameters in a fraction the time of a typical brute force approach. With the exception of the ‘CelebA’ training database, further novel test cases are supplied to the network for evaluation. Witness reports detailing criminals from Interpol or other law enforcement agencies are sampled on the network. Using the descriptions provided, samples are generated and compared with the ground truth images of a criminal in order to calculate the similarities. Two factors are used for performance evaluation: The Structural Similarity Index (SSIM) and the Peak Signal-to-Noise Ratio (PSNR). A high percentile output from this performance matrix should attribute to demonstrating the accuracy, in hope of proving that the proposed approach can be an effective tool for law enforcement agencies. The proposed approach to criminal facial image generation has potential to increase the ratio of criminal cases that can be ultimately resolved using eyewitness information gathering.

Keywords: Criminal Investigation, NLP, gan, RNN, facial composition

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2 DISGAN: Efficient Generative Adversarial Network-Based Method for Cyber-Intrusion Detection

Authors: Li Jiang, Hongyu Chen

Abstract:

Ubiquitous anomalies endanger the security of our system con- stantly. They may bring irreversible damages to the system and cause leakage of privacy. Thus, it is of vital importance to promptly detect these anomalies. Traditional supervised methods such as Decision Trees and Support Vector Machine (SVM) are used to classify normality and abnormality. However, in some case, the abnormal status are largely rarer than normal status, which leads to decision bias of these methods. Generative adversarial network (GAN) has been proposed to handle the case. With its strong generative ability, it only needs to learn the distribution of normal status, and identify the abnormal status through the gap between it and the learned distribution. Nevertheless, existing GAN-based models are not suitable to process data with discrete values, leading to immense degradation of detection performance. To cope with the discrete features, in this paper, we propose an efficient GAN-based model with specifically-designed loss function. Experiment results show that our model outperforms state-of-the-art models on discrete dataset and remarkably reduce the overhead.

Keywords: gan, discrete feature, Wasserstein distance, multiple intermediate layers

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1 NANCY: Combining Adversarial Networks with Cycle-Consistency for Robust Multi-Modal Image Registration

Authors: Mirjana Ruppel, Rajendra Persad, Amit Bahl, Sanja Dogramadzi, Chris Melhuish, Lyndon Smith

Abstract:

Multimodal image registration is a profoundly complex task which is why deep learning has been used widely to address it in recent years. However, two main challenges remain: Firstly, the lack of ground truth data calls for an unsupervised learning approach, which leads to the second challenge of defining a feasible loss function that can compare two images of different modalities to judge their level of alignment. To avoid this issue altogether we implement a generative adversarial network consisting of two registration networks GAB, GBA and two discrimination networks DA, DB connected by spatial transformation layers. GAB learns to generate a deformation field which registers an image of the modality B to an image of the modality A. To do that, it uses the feedback of the discriminator DB which is learning to judge the quality of alignment of the registered image B. GBA and DA learn a mapping from modality A to modality B. Additionally, a cycle-consistency loss is implemented. For this, both registration networks are employed twice, therefore resulting in images ˆA, ˆB which were registered to ˜B, ˜A which were registered to the initial image pair A, B. Thus the resulting and initial images of the same modality can be easily compared. A dataset of liver CT and MRI was used to evaluate the quality of our approach and to compare it against learning and non-learning based registration algorithms. Our approach leads to dice scores of up to 0.80 ± 0.01 and is therefore comparable to and slightly more successful than algorithms like SimpleElastix and VoxelMorph.

Keywords: Deep learning, gan, cycle consistency, deformable multimodal image registration

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