Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2

Cu2O Related Abstracts

2 Electrochemical Growth and Properties of Cu2O Nanostructures

Authors: A. Azizi, S. Laidoudi, G. Schmerber, A. Dinia

Abstract:

Cuprous oxide (Cu2O) is a well-known oxide semiconductor with a band gap of 2.1 eV and a natural p-type conductivity, which is an attractive material for device applications because of its abundant availability, non toxicity, and low production cost. It has a higher absorption coefficient in the visible region and the minority carrier diffusion length is also suitable for use as a solar cell absorber layer and it has been explored in junction with n type ZnO for photovoltaic applications. Cu2O nanostructures have been made by a variety of techniques; the electrodeposition method has emerged as one of the most promising processing routes as it is particularly provides advantages such as a low-cost, low temperature and a high level of purity in the products. In this work, Cu2O nanostructures prepared by electrodeposition from aqueous cupric sulfate solution with citric acid at 65°C onto a fluorine doped tin oxide (FTO) coated glass substrates were investigated. The effects of deposition potential on the electrochemical, surface morphology, structural and optical properties of Cu2O thin films were investigated. During cyclic voltammetry experiences, the potential interval where the electrodeposition of Cu2O is carried out was established. The Mott–Schottky (M-S) plot demonstrates that all the films are p-type semiconductors, the flat-band potential and the acceptor density for the Cu2O thin films are determined. AFM images reveal that the applied potential has a very significant influence on the surface morphology and size of the crystallites of thin Cu2O. The XRD measurements indicated that all the obtained films display a Cu2O cubic structure with a strong preferential orientation of the (111) direction. The optical transmission spectra in the UV-Visible domains revealed the highest transmission (75 %), and their calculated gap values increased from 1.93 to 2.24 eV, with increasing potentials.

Keywords: nanostructure, Optical Properties, XRD, electrodeposition, Cu2O, Mott–Schottky plot

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1 Potentiostatic Electrodeposition of Cu₂O Films as P-Type Electrode at Room Temperature

Authors: M. M. Moharam, E. M. Elsayed, M. M. Rashad

Abstract:

Single phase Cu₂O films have been prepared via an electrodeposition technique onto ITO glass substrates at room temperature. Likewise, Cu₂O films were deposited using a potentiostatic process from an alkaline electrolyte containing copper (II) nitrate and 1M sodium citrate. Single phase Cu₂O films were electrodeposited at a cathodic deposition potential of 500mV for a reaction period of 90 min, and pH of 12 to yield a film thickness of 0.49 µm. The mechanism for nucleation of Cu₂O films was found to vary with deposition potential. Applying the Scharifker and Hills model at -500 and -600 mV to describe the mechanism of nucleation for the electrochemical reaction, the nucleation mechanism consisted of a mix between instantaneous and progressive growth mechanisms at -500 mV, while above -600 mV the growth mechanism was instantaneous. Using deposition times from 30 to 90 min at -500 mV deposition potential, pure Cu2O films with different microstructures were electrodeposited. Changing the deposition time from 30 to 90 min varied the microstructure from cubic to more complex polyhedra. The transmittance of electrodeposited Cu₂O films ranged from 20-70% in visible range, and samples exhibited a 2.4 eV band gap. The electrical resistivity for electrodeposited Cu₂O films was found to decrease with increasing deposition time from 0.854 x 105 Ω-cm at 30 min to 0.221 x 105 Ω-cm at 90 min without any thermal treatment following the electrodeposition process.

Keywords: Characterization, Optical Properties, electrodeposition, film thickness, Cu2O

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