@article{(Open Science Index):https://publications.waset.org/pdf/9997366,
	  title     = {Native Point Defects in ZnO},
	  author    = {A. M. Gsiea and  J. P. Goss and  P. R. Briddon and  Ramadan. M. Al-habashi and  K. M. Etmimi and  Khaled. A. S. Marghani},
	  country	= {},
	  institution	= {},
	  abstract     = {Using first-principles methods based on density functional theory and pseudopotentials, we have performed a details study of native defects in ZnO. Native point defects are unlikely to be cause of the unintentional n-type conductivity. Oxygen vacancies,
which considered most often been invoked as shallow donors, have high formation energies in n-type ZnO, in edition are a deep donors. Zinc interstitials are shallow donors, with high formation energies in n-type ZnO, and thus unlikely to be responsible on their own for unintentional n-type conductivity under equilibrium conditions, as well as Zn antisites which have higher formation energies than zinc interstitials. Zinc vacancies are deep acceptors with low formation energies for n-type and in which case they will not play role in p-type coductivity of ZnO. Oxygen interstitials are stable in the form of electrically inactive split interstitials as well as deep acceptors at the octahedral interstitial site under n-type conditions. Our results may provide a guide to experimental studies of point defects in ZnO.
},
	    journal   = {International Journal of Materials and Metallurgical Engineering},
	  volume    = {8},
	  number    = {1},
	  year      = {2014},
	  pages     = {127 - 132},
	  ee        = {https://publications.waset.org/pdf/9997366},
	  url   	= {https://publications.waset.org/vol/85},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 85, 2014},
	}