%0 Journal Article
	%A Bakhtiar Ul Haq and  R. Ahmed and  A. Shaari and  Mazmira Binti Mohamed and  Nisar Ali
	%D 2015
	%J International Journal of Materials and Metallurgical Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 98, 2015
	%T Cr Induced Magnetization in Zinc-Blende ZnO Based Diluted Magnetic Semiconductors
	%U https://publications.waset.org/pdf/10001240
	%V 98
	%X The capability of exploiting the electronic charge and
spin properties simultaneously in a single material has made diluted
magnetic semiconductors (DMS) remarkable in the field of
spintronics. We report the designing of DMS based on zinc-blend
ZnO doped with Cr impurity. The full potential linearized augmented
plane wave plus local orbital FP-L(APW+lo) method in density
functional theory (DFT) has been adapted to carry out these
investigations. For treatment of exchange and correlation energy,
generalized gradient approximations have been used. Introducing Cr
atoms in the matrix of ZnO has induced strong magnetic moment
with ferromagnetic ordering at stable ground state. Cr:ZnO was found
to favor the short range magnetic interaction that
reflect tendency of Cr clustering. The electronic structure of ZnO is
strongly influenced in the presence of Cr impurity atoms where
impurity bands appear in the band gap.

	%P 164 - 168