%0 Journal Article %A Bakhtiar Ul Haq and R. Ahmed and A. Shaari and Mazmira Binti Mohamed and Nisar Ali %D 2015 %J International Journal of Materials and Metallurgical Engineering %B World Academy of Science, Engineering and Technology %I Open Science Index 98, 2015 %T Cr Induced Magnetization in Zinc-Blende ZnO Based Diluted Magnetic Semiconductors %U https://publications.waset.org/pdf/10001240 %V 98 %X The capability of exploiting the electronic charge and spin properties simultaneously in a single material has made diluted magnetic semiconductors (DMS) remarkable in the field of spintronics. We report the designing of DMS based on zinc-blend ZnO doped with Cr impurity. The full potential linearized augmented plane wave plus local orbital FP-L(APW+lo) method in density functional theory (DFT) has been adapted to carry out these investigations. For treatment of exchange and correlation energy, generalized gradient approximations have been used. Introducing Cr atoms in the matrix of ZnO has induced strong magnetic moment with ferromagnetic ordering at stable ground state. Cr:ZnO was found to favor the short range magnetic interaction that reflect tendency of Cr clustering. The electronic structure of ZnO is strongly influenced in the presence of Cr impurity atoms where impurity bands appear in the band gap. %P 164 - 168