%0 Journal Article %A Feng-Hao Hsu and Na-Fu Wang and Yu-Zen Tsai and Yu-Song Cheng and Cheng-Fu Yang and Mau-Phon Houng %D 2014 %J International Journal of Physical and Mathematical Sciences %B World Academy of Science, Engineering and Technology %I Open Science Index 91, 2014 %T Interfacial Layer Effect on Novel p-Ni1-xO:Li/n-Si Heterojunction Solar Cells %U https://publications.waset.org/pdf/9998912 %V 91 %X This study fabricates p-type Ni1−xO:Li/n-Si heterojunction solar cells (P+/n HJSCs) by using radio frequency (RF) magnetron sputtering and investigates the effect of substrate temperature on photovoltaic cell properties. Grazing incidence x-ray diffraction, four point probe, and ultraviolet-visible-near infrared discover the optoelectrical properties of p-Ni1-xO thin films. The results show that p-Ni1-xO thin films deposited at 300 oC has the highest grain size (22.4 nm), average visible transmittance (~42%), and electrical resistivity (2.7 Ωcm). However, the conversion efficiency of cell is shown only 2.33% which is lower than the cell (3.39%) fabricated at room temperature. This result can be mainly attributed to interfacial layer thickness (SiOx) reduces from 2.35 nm to 1.70 nm, as verified by high-resolution transmission electron microscopy. %P 683 - 686