@article{(Open Science Index):https://publications.waset.org/pdf/9998912,
	  title     = {Interfacial Layer Effect on Novel p-Ni1-xO:Li/n-Si Heterojunction Solar Cells },
	  author    = {Feng-Hao Hsu and  Na-Fu Wang and  Yu-Zen Tsai and  Yu-Song Cheng and  Cheng-Fu Yang and  Mau-Phon Houng},
	  country	= {},
	  institution	= {},
	  abstract     = {This study fabricates p-type Ni1−xO:Li/n-Si heterojunction solar cells (P+/n HJSCs) by using radio frequency (RF) magnetron sputtering and investigates the effect of substrate temperature on photovoltaic cell properties. Grazing incidence x-ray diffraction, four point probe, and ultraviolet-visible-near infrared discover the optoelectrical properties of p-Ni1-xO thin films. The results show that p-Ni1-xO thin films deposited at 300 oC has the highest grain size (22.4 nm), average visible transmittance (~42%), and electrical resistivity (2.7 Ωcm). However, the conversion efficiency of cell is shown only 2.33% which is lower than the cell (3.39%) fabricated at room temperature. This result can be mainly attributed to interfacial layer thickness (SiOx) reduces from 2.35 nm to 1.70 nm, as verified by high-resolution transmission electron microscopy.
},
	    journal   = {International Journal of Physical and Mathematical Sciences},
	  volume    = {8},
	  number    = {7},
	  year      = {2014},
	  pages     = {683 - 686},
	  ee        = {https://publications.waset.org/pdf/9998912},
	  url   	= {https://publications.waset.org/vol/91},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 91, 2014},
	}