@article{(Open Science Index):https://publications.waset.org/pdf/9998530, title = {Formation of Chemical Compound Layer at the Interface of Initial Substances A and B with Dominance of Diffusion of the A Atoms }, author = {Pavlo Selyshchev and Samuel Akintunde }, country = {}, institution = {}, abstract = {A theoretical approach to consider formation of chemical compound layer at the interface between initial substances A and B due to the interfacial interaction and diffusion is developed. It is considered situation when speed of interfacial interaction is large enough and diffusion of A-atoms through AB-layer is much more then diffusion of B-atoms. Atoms from A-layer diffuse toward B-atoms and form AB-atoms on the surface of B-layer. B-atoms are assumed to be immobile. The growth kinetics of the AB-layer is described by two differential equations with non-linear coupling, producing a good fit to the experimental data. It is shown that growth of the thickness of the AB-layer determines by dependence of chemical reaction rate on reactants concentration. In special case the thickness of the AB-layer can grow linearly or parabolically depending on that which of processes (interaction or the diffusion) controls the growth. The thickness of AB-layer as function of time is obtained. The moment of time (transition point) at which the linear growth are changed by parabolic is found. }, journal = {International Journal of Physical and Mathematical Sciences}, volume = {8}, number = {6}, year = {2014}, pages = {549 - 551}, ee = {https://publications.waset.org/pdf/9998530}, url = {https://publications.waset.org/vol/90}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 90, 2014}, }