A. Hamdoune and M. Abdelmoumene and A. Hamroun, Static and Dynamic Characteristics of an Appropriated and Recessed n-GaN/AlGaN/GaN HEMT. journal = {International Journal of Electronics and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology. November 2013, vol. 73(1). 96 - 100 [viewed 23 September 2024]. Available from: https://publications.waset.org/pdf/9996851.