@article{(Open Science Index):https://publications.waset.org/pdf/9996801,
	  title     = {Metal-Semiconductor-Metal Photodetector Based On Porous In0.08Ga0.92N},
	  author    = {Saleh H. Abud and  Z. Hassan and  F. K. Yam},
	  country	= {},
	  institution	= {},
	  abstract     = {Characteristics of MSM photodetector based on a porous In0.08Ga0.92N thin film were reported. Nanoporous structures of n-type In0.08Ga0.92N/AlN/Si thin films were synthesized by photoelectrochemical (PEC) etching at a ratio of 1:4 of HF:C2H5OH solution for 15min. The structural and optical properties of pre- and post-etched thin films were investigated. Field emission scanning electron microscope and atomic force microscope images showed that the pre-etched thin film has a sufficiently smooth surface over a large region and the roughness increased for porous film. Blue shift has been observed in photoluminescence emission peak at 300 K for porous sample. The photoluminescence intensity of the porous film indicated that the optical properties have been enhanced. A high work function metals (Pt and Ni) were deposited as a metal contact on the porous films. The rise and recovery times of the devices were investigated at 390nm chopped light. Finally, the sensitivity and quantum efficiency were also studied.
},
	    journal   = {International Journal of Nuclear and Quantum Engineering},
	  volume    = {7},
	  number    = {12},
	  year      = {2013},
	  pages     = {1002 - 1004},
	  ee        = {https://publications.waset.org/pdf/9996801},
	  url   	= {https://publications.waset.org/vol/84},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 84, 2013},
	}