%0 Journal Article %A N. Shen and Z. X. Chen and K.D. Buddharaju and H. M. Chua and X. Li and N. Singh and G.Q Lo and D.-L. Kwong %D 2010 %J International Journal of Electronics and Communication Engineering %B World Academy of Science, Engineering and Technology %I Open Science Index 48, 2010 %T Vertical GAA Silicon Nanowire Transistor with Impact of Temperature on Device Parameters %U https://publications.waset.org/pdf/8846 %V 48 %X In this paper, we present a vertical wire NMOS device fabricated using CMOS compatible processes. The impact of temperature on various device parameters is investigated in view of usual increase in surrounding temperature with device density. %P 1880 - 1883