@article{(Open Science Index):https://publications.waset.org/pdf/8846, title = {Vertical GAA Silicon Nanowire Transistor with Impact of Temperature on Device Parameters}, author = {N. Shen and Z. X. Chen and K.D. Buddharaju and H. M. Chua and X. Li and N. Singh and G.Q Lo and D.-L. Kwong}, country = {}, institution = {}, abstract = {In this paper, we present a vertical wire NMOS device fabricated using CMOS compatible processes. The impact of temperature on various device parameters is investigated in view of usual increase in surrounding temperature with device density.}, journal = {International Journal of Electronics and Communication Engineering}, volume = {4}, number = {12}, year = {2010}, pages = {1880 - 1883}, ee = {https://publications.waset.org/pdf/8846}, url = {https://publications.waset.org/vol/48}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 48, 2010}, }