Piezoelectric Polarization Effect on Debye Frequency and Temperature in Nitride Wurtzites
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Piezoelectric Polarization Effect on Debye Frequency and Temperature in Nitride Wurtzites

Authors: Bijay Kumar Sahoo, Ashok Kumar Srivastav

Abstract:

We have investigated the effect of piezoelectric (PZ) polarization property in binary as well as in ternary wurtzite nitrides. It is found that with the presence of PZ polarization property, the phonon group velocity is modified. The change in phonon group velocity due to PZ polarization effect directly depends on piezoelectric tensor value. Using different piezoelectric tensor values recommended by different workers in the literature, percent change in group velocities of phonons has been estimated. The Debye temperatures and frequencies of binary nitrides GaN, AlN and InN are also calculated using the modified group velocities. For ternary nitrides AlxGa(1-x)N, InxGa(1-x)N and InxAl(1-x)N, the phonon group velocities have been calculated as a functions of composition. A small positive bowing is observed in phonon group velocities of ternary alloys. Percent variations in phonon group velocities are also calculated for a straightforward comparison among ternary nitrides. The results are expected to show a change in phonon relaxation rates and thermal conductivity of III-nitrides when piezoelectric polarization property is taken into consideration.

Keywords: Wirtzite nitrides, piezoelectric polarization, Phonon group velocity, Debye frequency and Debye temperature.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1329224

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References:


[1] V.O Turin and A.A Balandin Electron Lett 40, 81(2004)
[2] A.ABalandin , S.V Morozov, Cai S, Li R., KLWang , G Wijeratne, CR Viswanathan IEEE Trans Microwave Theory Tech 47, 413(1999)
[3] R. Gaska, A. Osinsky, J.W Yang , and M.S Shur IEEE Electron Device Lett 19, 89 (1998)
[4] L.F Eastman, V. Tilak, J. Smart, B. M. Green, Chumbes EM, Dimitrov R, Hyungtak Kim, Ambacher OS, Weimann N, Prunty T, Murphy M, Scaff WJ, and Shealy JR IEEE Trans Electron Devices 48, 479(2001)
[5] Yen-Kuang Kuo, Miao-Chan Tsai, Sheng-Horng Yen, Ta-Cheng Hsu, and Yu-Jiu Shen IEEE Journal of Quantum Electronics 46, 1214(2010)
[6] E.K Sichel, J.I Pankove J Phys Chem Solids 38, 330 (1997)
[7] C.L Lou, H. Marchand , D.R Clarke , and S.P DenBaars Appl Phys Lett 75, 89 (1998)
[8] D.I Florescu, V.M Asnin , F.H Pollak , A.M Jones, J.C Ramer, J. M Schurman, I. Ferguson Appl Phys Lett 77, 1464(2000)
[9] B.C Daly, H. J. Maris, A. V. Numikko, M. Kuball, J. Han J Appl Phys 92, 3820(2002)
[10] S. Adachi J Appl Phys 102, 063502(2007)
[11] D. Kotchetkov, J. Zou, A. A. Balandin, D. I. Florscu, F. H. Pollak Appl Phys Lett 79, 4316(2001)
[12] J. Zou, D. Kotchetkov, A. A. Balandin, D. I. Florscu, F. H. Pollak, J Appl Phys 92, 2534 (2002)
[13] J. Callaway, Phys Rev 113, 1046 (1959)
[14] P. G. Klemens, In: Seitz F, Turnbull D (eds) Solid state physics, Vol.7. Academic, New York (1958)
[15] F. Bernardini, V. Fiorentini Phys Stat Sol B 216, 391 (1999)
[16] O. Ambacher, J. Smart, J. R. Shealy, N. Weimann, Chu k, Murphy M, Scaff WJ, Eastman LF, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Kilsenbeck J J Appl Phys 85, 3222(1999)
[17] A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck J Appl Phys 100, 023522(2006)
[18] I. Vurgaftman, J. R. Meywer J Appl Phys 94, 3675 (2003)
[19] F. Bernardini, V. Fiorentini Phys Rev B 64, 08520(2001)
[20] M. Balkanski, R. F. Wallis In: Semiconductor Physics and Application Oxford University Press Inc., New York, (2000).
[21] M. Feneberg, K. J. Thonke Phys: Condensed. Matter 19, 403201(2007)
[22] J. Wu J Appl Phys 106, 011101(2009)
[23] I. L. Guy, S. Muensit, E. M. Goldys Appl Phys Lett 75, 4133 (1999)
[24] S. Muensit, E. M. Goldys, I. L. Guy Appl Phys Lett 75, 3965(1999)
[25] O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, Bernardini F, Fiorentini V , Tilak V, M, Scaff WJ, Eastman LF J. Phys: Condensed. Matter 14, 3399 (2002)