Bu Jianhui and  Bi Jinshun and  Liu Mengxin and  Luo Jiajun and  Han Zhengsheng,  A Simulation Model for the H-gate PDSOI MOSFET.   journal   = {International Journal of Electronics and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology.
    November 2012, vol. 71(11). 1333 - 1335
    [viewed 24 April 2024]. Available from: https://publications.waset.org/pdf/8199.