WASET
	@article{(Open Science Index):https://publications.waset.org/pdf/7201,
	  title     = {Improvement in Silicon on Insulator Devices using Strained Si/SiGe Technology for High Performance in RF Integrated Circuits},
	  author    = {Morteza Fathipour and  Samira Omidbakhsh and  Kimia Khodayari},
	  country	= {},
	  institution	= {},
	  abstract     = {RF performance of SOI CMOS device has attracted
significant amount of interest recently. In order to improve RF
parameters, Strained Si/Relaxed Si0.8Ge0.2 investigated as a
replacement for Si technology .Enhancement of carrier mobility
associated with strain engineering makes Strained Si a promising
candidate for improving RF performance of CMOS technology.
From the simulation, the cut-off frequency is estimated to be 224
GHZ, whereas in SOI at similar bias is about 188 GHZ. Therefore,
Strained Si exhibits 19% improvement in cut-off frequency over
similar Si counterpart. In this paper, Ion/Ioff ratio is studied as one of
the key parameters in logic and digital application. Strained Si/SiGe
demonstrates better Ion/Ioff characteristic than SOI, in similar channel
length of 100 nm.Another important key analog figures of merit such
as Early Voltage (VEA) ,transconductance vs drain current (gm /Ids)
are studied. They introduce the efficiency of the devices to convert
dc power into ac frequency.},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {4},
	  number    = {12},
	  year      = {2010},
	  pages     = {1780 - 1783},
	  ee        = {https://publications.waset.org/pdf/7201},
	  url   	= {https://publications.waset.org/vol/48},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 48, 2010},
	}