%0 Journal Article
	%A Y. Liu and  M. K. Bera and  L. M. Kyaw and  G. Q. Lo and  E. F. Chor
	%D 2012
	%J International Journal of Electrical and Computer Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 69, 2012
	%T Low resistivity Hf/Al/Ni/Au Ohmic Contact Scheme to n-Type GaN
	%U https://publications.waset.org/pdf/6868
	%V 69
	%X The electrical and structural properties of Hf/Al/Ni/Au
(20/100/25/50 nm) ohmic contact to n-GaN are reported in this study.
Specific contact resistivities of Hf/Al/Ni/Au based contacts have been
investigated as a function of annealing temperature and achieve the
lowest value of 1.09´10-6 Ω·cm2 after annealing at 650 oC in vacuum.
A detailed mechanism of ohmic contact formation is discussed. By
using different chemical analyses, it is anticipated that the formation of
Hf-Al-N alloy might be responsible to form low temperature ohmic
contacts for the Hf-based scheme to n-GaN.
	%P 957 - 960