@article{(Open Science Index):https://publications.waset.org/pdf/6868,
	  title     = {Low resistivity Hf/Al/Ni/Au Ohmic Contact Scheme to n-Type GaN},
	  author    = {Y. Liu and  M. K. Bera and  L. M. Kyaw and  G. Q. Lo and  E. F. Chor},
	  country	= {},
	  institution	= {},
	  abstract     = {The electrical and structural properties of Hf/Al/Ni/Au
(20/100/25/50 nm) ohmic contact to n-GaN are reported in this study.
Specific contact resistivities of Hf/Al/Ni/Au based contacts have been
investigated as a function of annealing temperature and achieve the
lowest value of 1.09´10-6 Ω·cm2 after annealing at 650 oC in vacuum.
A detailed mechanism of ohmic contact formation is discussed. By
using different chemical analyses, it is anticipated that the formation of
Hf-Al-N alloy might be responsible to form low temperature ohmic
contacts for the Hf-based scheme to n-GaN.},
	    journal   = {International Journal of Electrical and Computer Engineering},
	  volume    = {6},
	  number    = {9},
	  year      = {2012},
	  pages     = {957 - 960},
	  ee        = {https://publications.waset.org/pdf/6868},
	  url   	= {https://publications.waset.org/vol/69},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 69, 2012},
	}