WASET
	@article{(Open Science Index):https://publications.waset.org/pdf/677,
	  title     = {Analytical Modeling of Channel Noise for Gate Material Engineered Surrounded/Cylindrical Gate (SGT/CGT) MOSFET},
	  author    = {Pujarini Ghosh A and  Rishu Chaujar B and  Subhasis Haldar C and  R.S Gupta D and  Mridula Gupta E},
	  country	= {},
	  institution	= {},
	  abstract     = {In this paper, an analytical modeling is presentated to
describe the channel noise in GME SGT/CGT MOSFET, based on
explicit functions of MOSFETs geometry and biasing conditions for
all channel length down to deep submicron and is verified with the
experimental data. Results shows the impact of various parameters
such as gate bias, drain bias, channel length ,device diameter and gate
material work function difference on drain current noise spectral
density of the device reflecting its applicability for circuit design
applications.},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {4},
	  number    = {4},
	  year      = {2010},
	  pages     = {751 - 754},
	  ee        = {https://publications.waset.org/pdf/677},
	  url   	= {https://publications.waset.org/vol/40},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 40, 2010},
	}