%0 Journal Article %A Fatemeh Karimi and Morteza Fathipour and Hamdam Ghanatian and Vala Fathipour %D 2010 %J International Journal of Nuclear and Quantum Engineering %B World Academy of Science, Engineering and Technology %I Open Science Index 45, 2010 %T A Comparison Study of Electrical Characteristics in Conventional Multiple-gate Silicon Nanowire Transistors %U https://publications.waset.org/pdf/497 %V 45 %X In this paper electrical characteristics of various kinds of multiple-gate silicon nanowire transistors (SNWT) with the channel length equal to 7 nm are compared. A fully ballistic quantum mechanical transport approach based on NEGF was employed to analyses electrical characteristics of rectangular and cylindrical silicon nanowire transistors as well as a Double gate MOS FET. A double gate, triple gate, and gate all around nano wires were studied to investigate the impact of increasing the number of gates on the control of the short channel effect which is important in nanoscale devices. Also in the case of triple gate rectangular SNWT inserting extra gates on the bottom of device can improve the application of device. The results indicate that by using gate all around structures short channel effects such as DIBL, subthreshold swing and delay reduces. %P 1371 - 1374