@article{(Open Science Index):https://publications.waset.org/pdf/497,
	  title     = {A Comparison Study of Electrical Characteristics in Conventional Multiple-gate Silicon Nanowire Transistors},
	  author    = {Fatemeh Karimi and  Morteza Fathipour and  Hamdam Ghanatian and  Vala Fathipour},
	  country	= {},
	  institution	= {},
	  abstract     = {In this paper electrical characteristics of various kinds
of multiple-gate silicon nanowire transistors (SNWT) with the
channel length equal to 7 nm are compared. A fully ballistic quantum
mechanical transport approach based on NEGF was employed to
analyses electrical characteristics of rectangular and cylindrical
silicon nanowire transistors as well as a Double gate MOS FET. A
double gate, triple gate, and gate all around nano wires were studied
to investigate the impact of increasing the number of gates on the
control of the short channel effect which is important in nanoscale
devices. Also in the case of triple gate rectangular SNWT inserting
extra gates on the bottom of device can improve the application of
device. The results indicate that by using gate all around structures
short channel effects such as DIBL, subthreshold swing and delay
reduces.},
	    journal   = {International Journal of Nuclear and Quantum Engineering},
	  volume    = {4},
	  number    = {9},
	  year      = {2010},
	  pages     = {1371 - 1374},
	  ee        = {https://publications.waset.org/pdf/497},
	  url   	= {https://publications.waset.org/vol/45},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 45, 2010},
	}