%0 Journal Article
	%A F. Barzegar and  M. H. Sheikhi
	%D 2010
	%J International Journal of Nuclear and Quantum Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 44, 2010
	%T A New Physical Modeling for Multiquantum Well Structure APD Considering Nonuniformity of Electric Field in Active Regin
	%U https://publications.waset.org/pdf/4799
	%V 44
	%X In the present work we model a Multiquantum Well
structure Separate Absorption and Charge Multiplication Avalanche
Photodiode (MQW-SACM-APD), while the Absorption region
coincide with the MQW. We consider the nonuniformity of electric
field using split-step method in active region. This model is based on
the carrier rate equations in the different regions of the device. Using
the model we obtain the photocurrent, and dark current. As an
example, InGaAs/InP SACM-APD and MQW-SACM-APD are
simulated. There is a good agreement between the simulation and
experimental results.
	%P 1162 - 1169