@article{(Open Science Index):https://publications.waset.org/pdf/4109,
	  title     = {High Performance In0.42Ga0.58As/In0.26Ga0.74As Vertical Cavity Surface Emitting Quantum Well Laser on In0.31Ga0.69As Ternary Substrate},
	  author    = {Md. M. Biswas and  Md. M. Hossain and  Shaikh Nuruddin},
	  country	= {},
	  institution	= {},
	  abstract     = {This paper reports on the theoretical performance
analysis of the 1.3 μm In0.42Ga0.58As /In0.26Ga0.74As multiple quantum
well (MQW) vertical cavity surface emitting laser (VCSEL) on the
ternary In0.31Ga0.69As substrate. The output power of 2.2 mW has
been obtained at room temperature for 7.5 mA injection current. The
material gain has been estimated to be ~3156 cm-1 at room
temperature with the injection carrier concentration of 2×1017 cm-3.
The modulation bandwidth of this laser is measured to be 9.34 GHz
at room temperature for the biasing current of 2 mA above the
threshold value. The outcomes reveal that the proposed InGaAsbased
MQW laser is the promising one for optical communication
system.},
	    journal   = {International Journal of Nuclear and Quantum Engineering},
	  volume    = {5},
	  number    = {3},
	  year      = {2011},
	  pages     = {351 - 355},
	  ee        = {https://publications.waset.org/pdf/4109},
	  url   	= {https://publications.waset.org/vol/51},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 51, 2011},
	}