@article{(Open Science Index):https://publications.waset.org/pdf/4050,
	  title     = {Raman Scattering and PL Studies on AlGaN/GaN HEMT Layers on 200 mm Si(111)},
	  author    = {W. Z. Wang and  S. Todd and  S. B. Dolmanan and  K. B. Lee and  L. Yuan and  H. F. Sun and  S. L. Selvaraj and  M.Krishnakumar and  G. Q. Lo and  S. Tripathy},
	  country	= {},
	  institution	= {},
	  abstract     = {The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible micro- Raman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer resulting from a wafer bowing, while the UV micro-Raman indicates a tensile interfacial stress induced at the top GaN/AlGaN/AlN layers. PL shows a good crystal quality GaN channel where the yellow band intensity is very low compared to that of the near-band-edge transition. The uniformity of this sample is shown by measurements from several points across the epiwafer.
},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {6},
	  number    = {9},
	  year      = {2012},
	  pages     = {1056 - 1059},
	  ee        = {https://publications.waset.org/pdf/4050},
	  url   	= {https://publications.waset.org/vol/69},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 69, 2012},
	}