Ashwani K. Rana and  Narottam Chand and  Vinod Kapoor,  A Novel Source/Drain-to-Gate Non-overlap MOSFET to Reduce Gate Leakage Current in Nano Regime.   journal   = {International Journal of Electronics and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology.
    October 2011, vol. 58(10). 1132 - 1138
    [viewed 20 April 2024]. Available from: https://publications.waset.org/pdf/3314.