%0 Journal Article
	%A M. M. Hasan and  A. S. M. A. Haseeb and  R. Saidur and  H. H. Masjuki
	%D 2008
	%J International Journal of Mechanical and Mechatronics Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 16, 2008
	%T Effects of Annealing Treatment on Optical Properties of Anatase TiO2 Thin Films
	%U https://publications.waset.org/pdf/3164
	%V 16
	%X In this investigation, anatase TiO2 thin films were
grown by radio frequency magnetron sputtering on glass substrates at
a high sputtering pressure and room temperature. The anatase films
were then annealed at 300-600 °C in air for a period of 1 hour. To
examine the structure and morphology of the films, X-ray diffraction
(XRD) and atomic force microscopy (AFM) methods were used
respectively. From X-ray diffraction patterns of the TiO2 films, it was
found that the as-deposited film showed some differences compared
with the annealed films and the intensities of the peaks of the
crystalline phase increased with the increase of annealing
temperature. From AFM images, the distinct variations in the
morphology of the thin films were also observed. The optical
constants were characterized using the transmission spectra of the
films obtained by UV-VIS-IR spectrophotometer. Besides, optical
thickness of the film deposited at room temperature was calculated
and cross-checked by taking a cross-sectional image through SEM.
The optical band gaps were evaluated through Tauc model. It was
observed that TiO2 films produced at room temperatures exhibited
high visible transmittance and transmittance decreased slightly with
the increase of annealing temperatures. The films were found to be
crystalline having anatase phase. The refractive index of the films
was found from 2.31-2.35 in the visible range. The extinction
coefficient was nearly zero in the visible range and was found to
increase with annealing temperature. The allowed indirect optical
band gap of the films was estimated to be in the range from 3.39 to
3.42 eV which showed a small variation. The allowed direct band
gap was found to increase from 3.67 to 3.72 eV. The porosity was
also found to decrease at a higher annealing temperature making the
film compact and dense.
	%P 410 - 414