%0 Journal Article
	%A Kensuke Akiyama and  Satoru Kaneko and  Takeshi Ozawa and  Kazuya Yokomizo and  Masaru Itakura
	%D 2011
	%J International Journal of Materials and Metallurgical Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 50, 2011
	%T Photoluminescence Properties of β-FeSi2 on Cu- or Au-coated Si
	%U https://publications.waset.org/pdf/2824
	%V 50
	%X The photoluminescence (PL) at 1.55 μm from
semiconducting β-FeSi2 has attracted a noticeable interest for
silicon-based optoelectronic applications. Moreover, its high optical
absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this
semiconducting material to be used as photovoltanics devices.
A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating
on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative
center was formed on a Cu- or Au- reated Si layer. This method of
deposition can be applied to other materials requiring high crystal
quality.
	%P 133 - 135