TY - JFULL AU - Li Yuan and Weizhu Wang and Kean Boon Lee and Haifeng Sun and Susai Lawrence Selvaraj and Shane Todd and Guo-Qiang Lo PY - 2012/10/ TI - On the Operation Mechanism and Device Modeling of AlGaN/GaN High Electron Mobility Transistors (HEMTs) T2 - International Journal of Electronics and Communication Engineering SP - 909 EP - 913 VL - 6 SN - 1307-6892 UR - https://publications.waset.org/pdf/2647 PU - World Academy of Science, Engineering and Technology NX - Open Science Index 69, 2012 N2 - In this work, the physical based device model of AlGaN/GaN high electron mobility transistors (HEMTs) has been established and the corresponding device operation behavior has been investigated also by using Sentaurus TCAD from Synopsys. Advanced AlGaN/GaN hetero-structures with GaN cap layer and AlN spacer have been considered and the GaN cap layer and AlN spacer are found taking important roles on the gate leakage blocking and off-state breakdown voltage enhancement. ER -