@article{(Open Science Index):https://publications.waset.org/pdf/1703,
	  title     = {Silicon Nanowire for Thermoelectric Applications: Effects of Contact Resistance},
	  author    = {Y. Li and  K. Buddharaju and  N. Singh and  G. Q. Lo and  S. J. Lee},
	  country	= {},
	  institution	= {},
	  abstract     = {Silicon nanowire (SiNW) based thermoelectric device (TED) has potential applications in areas such as chip level cooling/ energy harvesting. It is a great challenge however, to assemble an efficient device with these SiNW. The presence of parasitic in the form of interfacial electrical resistance will have a significant impact on the performance of the TED. In this work, we explore the effect of the electrical contact resistance on the performance of a TED. Numerical simulations are performed on SiNW to investigate such effects on its cooling performance. Intrinsically, SiNW individually without the unwanted parasitic effect has excellent cooling power density. However, the cooling effect is undermined with the contribution of the electrical contact resistance.
},
	    journal   = {International Journal of Physical and Mathematical Sciences},
	  volume    = {5},
	  number    = {9},
	  year      = {2011},
	  pages     = {1502 - 1505},
	  ee        = {https://publications.waset.org/pdf/1703},
	  url   	= {https://publications.waset.org/vol/57},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 57, 2011},
	}